Test Probe
    2.
    发明申请
    Test Probe 审中-公开
    测试探头

    公开(公告)号:US20120001650A1

    公开(公告)日:2012-01-05

    申请号:US12974423

    申请日:2010-12-21

    CPC classification number: B08B1/04 G01R1/06722 G01R1/06733 G01R3/00

    Abstract: A test probe is configured to provide conductive contact with a surface on application of the probe to the surface. The probe includes a probe body having a proximal and distal end, a probe tip located at the distal end of the probe body, the probe being configured such that, when the probe tip is applied to the surface, the probe tip is moved to rotate about its axis, whereby the shaft tip can rotatably remove oxidation and/or contamination debris from between the shaft tip and the surface.

    Abstract translation: 测试探针被配置为在将探针应用于表面时提供与表面的导电接触。 探针包括具有近端和远端的探针主体,位于探针主体远端的探针尖端,探针构造成使得当探针尖端被施加到表面时,探针尖端被移动以旋转 围绕其轴线,由此轴尖端可旋转地从轴尖端和表面之间移除氧化和/或污染碎屑。

    PASSIVATION TECHNIQUE
    10.
    发明申请
    PASSIVATION TECHNIQUE 审中-公开
    被动技术

    公开(公告)号:US20100096730A1

    公开(公告)日:2010-04-22

    申请号:US12568233

    申请日:2009-09-28

    Abstract: A method of semiconductor wafer fabrication. The wafer is fabricated by receiving a semiconductor wafer having a substrate layer and at least one processed layer, cutting a trench into the wafer, wherein the trench penetrates through the at least one processed layer and only partially through the thickness of the substrate layer, and depositing a passivation layer over the at least one processed layer such that the trench is filled with the passivation material.

    Abstract translation: 一种半导体晶片制造方法。 通过接收具有衬底层和至少一个处理层的半导体晶片来制造晶片,将沟槽切割到晶片中,其中沟槽穿过至少一个处理层并且仅部分地穿过衬底层的厚度,以及 在所述至少一个处理层上沉积钝化层,使得所述沟槽被所述钝化材料填充。

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