公开(公告)号：US06310369B1

公开(公告)日：2001-10-30

申请号：US08789519

申请日：1997-01-27

申请人： Tadakuni Narabu ,  Maki Sato ,  Yasuhito Maki

发明人： Tadakuni Narabu ,  Maki Sato ,  Yasuhito Maki

IPC分类号： H01L24148

CPC分类号： H01L29/76816 ,  G11C19/285

摘要： In a floating diffusion output type or a floating gate output type charge-to-voltage converter, the floating diffusion or the floating gate is coupled to one or more diffusion regions by means of one or more switch elements, and such elements are selectively turned on or off in such a manner that the the charge-to-voltage conversion factor is raised to obtain a great voltage amplitude when a small quantity of signal charge is input, or the conversion factor is lowered to obtain a small voltage amplitude when a large quantity of signal charge is input.

摘要翻译： 在浮动扩散输出型或浮置栅极输出型电荷 - 电压转换器中，浮动扩散或浮动栅极通过一个或多个开关元件耦合到一个或多个扩散区域，并且这些元件选择性地导通 或者使得当输入少量的信号电荷时提高电荷电压转换因子以获得大的电压幅度，或者当大量的转换因子降低以获得小的电压幅度时， 的信号电荷被输入。

公开(公告)号：US5642162A

公开(公告)日：1997-06-24

申请号：US631928

申请日：1996-04-15

申请人： Yasuhito Maki ,  Maki Sato ,  Tadakuni Narabu ,  Tadao Takagi ,  Hiroyuki Iwasaki ,  Tetsuro Goto

发明人： Yasuhito Maki ,  Maki Sato ,  Tadakuni Narabu ,  Tadao Takagi ,  Hiroyuki Iwasaki ,  Tetsuro Goto

IPC分类号： H01L27/148 ,  H01L21/339 ,  H01L29/762 ,  H04N5/335 ,  H04N5/341 ,  H04N5/351 ,  H04N5/357 ,  H04N5/361 ,  H04N5/369 ,  H04N5/372 ,  H04N5/3728 ,  H04N5/378 ,  H04N3/14

CPC分类号： H04N5/361 ,  H04N5/3728

摘要： A charge transfer device includes a circuit which can correct a fluctuated amount of light (charge amount)--output voltage characteristic with accuracy even when fluctuated by the change of temperature and the fluctuation of a power supply voltage. An output voltage characteristic in the standard state corresponding to a reference charge is stored and held in a ROM in advance. An ALU (arithmetic logical unit) corrects the light (charge amount)--output voltage characteristic by using the output voltage characteristic in the standard state corresponding to the reference charge stored in the ROM and the output voltages corresponding to the reference charge inputs from reference charge input portions in an imaging state, and corrects an output voltage (Va) corresponding to a signal charge in a practical imaging state.

摘要翻译： 电荷转移装置包括可以通过温度变化和电源电压的波动波动而能够精确地校正波动量（充电量） - 输出电压特性的电路。 对应于参考电荷的标准状态的输出电压特性预先存储并保存在ROM中。 ALU（算术逻辑单元）通过使用与存储在ROM中的参考电荷相对应的标准状态下的输出电压特性和对应于参考电荷的参考电荷输入的输出电压来校正光（充电量） - 输出电压特性 输入部分，并且在实际成像状态下校正与信号电荷相对应的输出电压（Va）。

公开(公告)号：US5227650A

公开(公告)日：1993-07-13

申请号：US824355

申请日：1992-01-23

申请人： Katsunori Noguchi ,  Maki Sato ,  Tadakuni Narabu ,  Yasuhito Maki

发明人： Katsunori Noguchi ,  Maki Sato ,  Tadakuni Narabu ,  Yasuhito Maki

IPC分类号： H01L29/762 ,  H01L21/339 ,  H01L29/768 ,  H04N5/335 ,  H04N5/341 ,  H04N5/372

CPC分类号： H01L29/76833 ,  H01L29/76816

摘要： The present invention is to provide a CCD delay line in which a deterioration of a charge transfer efficiency can be reduced by maintaining a charge amount treated in a charge transfer section provided at the rear stage of an intermediate output section. According to an aspect of the present invention, in a charge transfer device having charge transfer sections of a plurality of stages consisting of electrode pairs of a transfer gate electrode and a storage gate electrode and at least one intermediate output section provided at the rear stage of a charge transfer section of a predetermined stage from the signal input side, a cross-sectional area of at least one of the transfer gate electrode and the storage gate electrode in the charge transfer section provided at the rear stage of the intermediate output section is selected to be larger than that in the charge transfer section provided at the front stage of the intermediate output section. Further, the impurity concentration in the region of a semiconductor substrate corresponding to the transfer gate electrode in the charge transfer section provided at the rear stage of the intermediate output section is selected to be lower than that in the charge transfer section provided at the front stage of the intermediate output section, thereby the potential barrier being increased.

公开(公告)号：US5029189A

公开(公告)日：1991-07-02

申请号：US102432

申请日：1987-09-29

申请人： Maki Sato ,  Tadakuni Narabu ,  Yasuhito Maki

发明人： Maki Sato ,  Tadakuni Narabu ,  Yasuhito Maki

IPC分类号： G11C19/28 ,  G11C27/04 ,  H01L27/105 ,  H01L29/768

CPC分类号： H01L27/1057 ,  G11C19/285 ,  G11C27/04 ,  H01L29/76808

摘要： A charge coupled device employs peak hold circuits for detecting electric charges transferred through reference registers for facilitating automatic iput bias control. The peak hold circuits are respectively connected to a pair of reference registers which are so designed that one of the reference registers has a given maximum rating and the other reference register is adapted to transfer electric charge having a given fraction of the maximum charge rating of the aforementioned one of registers. The peak hold circuits provide peak values of the outputs of the reference registers to a comparator which feedback controls the input bias of the one of the register. This controlled bias is also applied to an input bias for a signal register which is designed for transferring input electric charge.

摘要翻译： 电荷耦合器件采用峰值保持电路来检测通过参考寄存器传输的电荷，以便于自动iput偏置控制。 峰值保持电路分别连接到一对参考寄存器，其被设计为使得一个参考寄存器具有给定的最大额定值，而另一个参考寄存器适于转移具有给定最大额定电压的给定分数的电荷 上述一个寄存器。 峰值保持电路将参考寄存器的输出的峰值提供给比较器，反馈控制寄存器之一的输入偏置。 该受控偏置也适用于设计用于传输输入电荷的信号寄存器的输入偏置。

公开(公告)号：US5612739A

公开(公告)日：1997-03-18

申请号：US610577

申请日：1996-03-07

申请人： Yasuhito Maki ,  Maki Sato ,  Tadakuni Narabu

发明人： Yasuhito Maki ,  Maki Sato ,  Tadakuni Narabu

IPC分类号： H01L29/762 ,  H01L21/339 ,  H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/357 ,  H04N5/361 ,  H04N5/363 ,  H04N5/369 ,  H04N5/372 ,  H04N5/3728 ,  H04N5/378

CPC分类号： H04N5/361 ,  H04N5/37213 ,  H04N5/3728

摘要： A charge transfer device including a charge input portion for inputting a reference charge, a charge transfer portion for receiving and transferring the reference charge, and a conversion portion converting the reference charge outputted from the charge transfer portion into a reference voltage. The reference charge input portion may be arranged to generate a reference charge. Alternatively, the reference charge may be externally generated. The charge transfer device may further include a signal charge input portion for inputting signal charges to the charge transfer portion. The signal charge input portion may be arranged to generate signal charges corresponding to incident light. Signal charges externally generated may be inputted to the signal charge input portion. The charge transfer device enables a charge-output voltage characteristic to be accurately detected at all times without any problem. It is also possible to accurately control the charge-output voltage characteristic.

摘要翻译： 一种电荷转移装置，包括用于输入参考电荷的电荷输入部分，用于接收和转移参考电荷的电荷转移部分，以及将从电荷转移部分输出的参考电荷转换为参考电压的转换部分。 参考电荷输入部分可以被布置成产生参考电荷。 或者，可以从外部产生参考电荷。 电荷转移装置还可以包括用于向电荷转移部分输入信号电荷的信号电荷输入部分。 信号电荷输入部分可以被布置成产生对应于入射光的信号电荷。 外部产生的信号电荷可以被输入到信号电荷输入部分。 电荷转移装置能够始终没有任何问题地一直准确地检测电荷输出电压特性。 也可以精确地控制充放电电压特性。

公开(公告)号：US5189499A

公开(公告)日：1993-02-23

申请号：US771867

申请日：1991-10-08

申请人： Akio Izumi ,  Yasuhito Maki ,  Tadakuni Narabu ,  Maki Sato ,  Takaji Otsu ,  Katsuyuki Saito

发明人： Akio Izumi ,  Yasuhito Maki ,  Tadakuni Narabu ,  Maki Sato ,  Takaji Otsu ,  Katsuyuki Saito

IPC分类号： H01F7/06 ,  H01L21/28 ,  H01L21/8234 ,  H01L27/105 ,  H01L29/51

CPC分类号： H01L21/28202 ,  H01L21/8234 ,  H01L27/1057 ,  H01L29/513 ,  H01L29/518

摘要： A charge-coupled device has a multi-layer structure insulating layer is formed beneath a transfer electrode, floating electrodes and an electrode adjacent the floating electrodes so that pin hole phenomenon in a charge transfer section of the charge coupled device can be successfully prevented. On the other hand, a sole-layer structure insulating layer is formed beneath a gate electrode of a peripheral component so that a threshold voltage of the gate electrode of the peripheral component can be successfully controlled at a desired value.

摘要翻译： 电荷耦合器件具有在传输电极，浮置电极和邻近浮置电极的电极之下形成的多层结构绝缘层，从而可以成功地防止电荷耦合器件的电荷转移部分中的针孔现象。 另一方面，在周边部件的栅电极的下方形成底层结构绝缘层，使得能够成功地将外围部件的栅电极的阈值电压控制在期望值。

公开(公告)号：US4660176A

公开(公告)日：1987-04-21

申请号：US482765

申请日：1983-04-07

申请人： Tadakuni Narabu ,  Maki Sato

发明人： Tadakuni Narabu ,  Maki Sato

IPC分类号： G11C19/28 ,  G11C27/04 ,  G11C11/34

CPC分类号： G11C19/285 ,  G11C27/04

摘要： A digital memory comprises a charge coupled device (CCD) that includes a reference signal storage section. The digital input to the CCD includes an input reference signal and an information signal having a plurality of data levels, for example, a digital "0" and "1". The input reference signal includes a reference bit at the higher data level. The reference signal storage section divides the level of the reference bit to provide a reference level signal halfway between the two data levels. Thus, any shift in the data levels due, for example, to temperature changes in the CCD, affects the reference level signal to the same degree and the reference level can be kept exactly halfway between the data levels.

摘要翻译： 数字存储器包括电荷耦合器件（CCD），其包括参考信号存储部分。 到CCD的数字输入包括输入参考信号和具有多个数据电平的信息信号，例如数字“0”和“1”。 输入参考信号包括较高数据电平的参考位。 参考信号存储部分分配参考位的电平以在两个数据电平之间提供参考电平信号。 因此，例如由于CCD中的温度变化导致的数据电平的任何偏移都以相同的程度影响参考电平信号，并且参考电平可以准确地保持在数据电平之间的正中。

公开(公告)号：US5337163A

公开(公告)日：1994-08-09

申请号：US787948

申请日：1991-11-05

申请人： Seiichi Kawamoto ,  Maki Sato ,  Tadakuni Narabu ,  Hisanori Miura

发明人： Seiichi Kawamoto ,  Maki Sato ,  Tadakuni Narabu ,  Hisanori Miura

IPC分类号： H04N1/028 ,  H04N1/40 ,  H04N5/335 ,  H04N5/341 ,  H04N5/351 ,  H04N5/353 ,  H04N5/369 ,  H04N5/372 ,  H04N1/04 ,  H04N3/14

CPC分类号： H04N5/3692 ,  H04N1/40056

摘要： The present invention is directed to a linear image sensor, the electric charge storage time of which can be varied. According to an embodiment of the present invention, there is provided a linear image sensor in which a read-out gate and a charge-transfer gate are disposed on one side of an image sensor array, and a drain gate and a drain region are disposed on the other side of the image sensor array, whereby the electric charge storage time in which a signal charge is transferred by the charge-transfer register after the signal charge is read out by the application of a read-out signal to the read-out gate and the next read-out signal is applied to the read-out gate can be varied by varying the application timing of the drain gate signal. When the linear image sensor is applied to a facsimile, the output level can be adjusted and the light and shade can be controlled by varying the electric charge accumulation time in response to the change of light intensity of a light source or by the change of scan speed of the linear image sensor.

摘要翻译： 本发明涉及可以改变其电荷储存时间的线性图像传感器。 根据本发明的一个实施例，提供了一种线性图像传感器，其中读出栅极和电荷转移栅极设置在图像传感器阵列的一侧，并且排列栅极和漏极区域被布置 在图像传感器阵列的另一侧上，由此通过向读出的读出信号应用信号电荷后，由电荷转移寄存器传送信号电荷的电荷存储时间 栅极和下一个读出信号被施加到读出门可以通过改变漏极栅极信号的施加定时来改变。 当将线性图像传感器应用于传真机时，可以调节输出电平，并且可以通过响应于光源的光强度的改变或通过扫描的改变来改变电荷累积时间来控制光和阴影 线速图像传感器。

公开(公告)号：US5303052A

公开(公告)日：1994-04-12

申请号：US98755

申请日：1993-07-29

申请人： Tadakuni Narabu ,  Hisanori Miura ,  Maki Sato

发明人： Tadakuni Narabu ,  Hisanori Miura ,  Maki Sato

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/347 ,  H04N5/351 ,  H04N5/353 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H04N5/378

CPC分类号： H04N5/2351 ,  H04N5/2357 ,  H04N5/353 ,  H04N5/3692 ,  H04N5/372

摘要： A CCD solid-state image pickup device includes a CCD solid-state image pickup element which includes a sensor array comprising a number of one-dimensionally arranged photosensitive units, a read-out gate, a transfer register and electronic shutter means comprising a drain gate and a drain region, the read-out gate and the transfer register being disposed at one side of the sensor array and the electronic shutter means being disposed at the other side of the sensor array, an output level comparator for comparing the output level of each image pickup signal from the CCD solid-state image pickup element with the output level of a predetermined reference signal to output a comparison signal, and a shutter-timing generating unit for generating an output timing of a shutter pulse for a predetermined period on the basis of the comparison signal from the output level comparator, and supplying the shutter pulse to the electronic shutter means of the CCD solid-state image pickup element at the generated output timing.

摘要翻译： CCD固态摄像装置包括：CCD固体摄像元件，其包括具有多个一维排列的感光单元的传感器阵列，读出门，传送寄存器和电子快门装置，其包括排水门 和漏极区域，读出栅极和传输寄存器设置在传感器阵列的一侧，电子快门装置设置在传感器阵列的另一侧;输出电平比较器，用于将每个 具有预定参考信号的输出电平的来自CCD固态图像拾取元件的图像拾取信号，以输出比较信号;以及快门时序生成单元，用于基于该阈值产生预定时段的快门脉冲的输出定时 来自输出电平比较器的比较信号，并将快门脉冲提供给CCD固态摄像元件的电子快门装置， 激发输出时序。

公开(公告)号：US5298776A

公开(公告)日：1994-03-29

申请号：US677120

申请日：1991-03-29

申请人： Seiichi Kawamoto ,  Maki Sato ,  Tadakuni Narabu ,  Hisanori Miura ,  Masahide Hirama

发明人： Seiichi Kawamoto ,  Maki Sato ,  Tadakuni Narabu ,  Hisanori Miura ,  Masahide Hirama

IPC分类号： H01L21/339 ,  H01L27/148 ,  H01L29/762 ,  H01L29/768 ,  H04N5/335 ,  H04N5/341 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H01L29/78

CPC分类号： H01L29/76808

摘要： A solid state imager element has a sensor portion, a register portion and a read gate portion for reading a signal charge from the sensor portion and transferring the same to the register portion, wherein a potential difference is formed in the read gate portion in a reading and transferring direction for directing an unnecessary charge or noise toward the register portion to thereby suppress noise in the sensor portion.

摘要翻译： 固态成像元件具有传感器部分，寄存器部分和读取栅极部分，用于从传感器部分读取信号电荷并将其传送到寄存器部分，其中在读取读取栅极部分中形成电位差 以及用于将不必要的电荷或噪声引导到寄存器部分的传送方向，从而抑制传感器部分中的噪声。