公开(公告)号：US20210366704A1

公开(公告)日：2021-11-25

申请号：US17391537

申请日：2021-08-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jian-Jou Lian ,  Yao-Wen Hsu ,  Neng-Jye Yang ,  Li-Min Chen ,  Chia-Wei Wu ,  Kuan-Lin Chen ,  Kuo Bin Huang

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/02 ,  G03F7/32 ,  G03F7/20 ,  G03F7/09 ,  H01L21/033

Abstract: A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.

公开(公告)号：US20220334473A1

公开(公告)日：2022-10-20

申请号：US17809912

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Min Chen ,  Kuo Bin Huang ,  Neng-Jye Yang ,  Chia-Wei Wu ,  Jian-Jou Lian

IPC: G03F7/00 ,  G03F7/075 ,  G03F7/09 ,  G03F7/16 ,  H01L21/027 ,  G03F7/42 ,  G03F1/80 ,  H01L21/02 ,  G03F7/20 ,  H01L21/311 ,  H01L21/033 ,  H01L21/768

Abstract: A method includes forming a tri-layer. The tri-layer includes a bottom layer; a middle layer over the bottom layer; and a top layer over the middle layer. The top layer includes a photo resist. The method further includes removing the top layer; and removing the middle layer using a chemical solution. The chemical solution is free from potassium hydroxide (KOH), and includes at least one of a quaternary ammonium hydroxide and a quaternary ammonium fluoride.

公开(公告)号：US11378882B2

公开(公告)日：2022-07-05

申请号：US17007733

申请日：2020-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Min Chen ,  Kuo Bin Huang ,  Neng-Jye Yang ,  Chia-Wei Wu ,  Jian-Jou Lian

IPC: G03F7/00 ,  G03F7/075 ,  G03F7/09 ,  G03F7/16 ,  H01L21/027 ,  G03F7/42 ,  G03F1/80 ,  H01L21/02 ,  G03F7/20 ,  H01L21/311 ,  H01L21/033 ,  H01L21/768

Abstract: A method includes forming a tri-layer. The tri-layer includes a bottom layer; a middle layer over the bottom layer; and a top layer over the middle layer. The top layer includes a photo resist. The method further includes removing the top layer; and removing the middle layer using a chemical solution. The chemical solution is free from potassium hydroxide (KOH), and includes at least one of a quaternary ammonium hydroxide and a quaternary ammonium fluoride.

公开(公告)号：US11031302B2

公开(公告)日：2021-06-08

申请号：US16517767

申请日：2019-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ju-Li Huang ,  Chih-Long Chiang ,  Kuo Bin Huang ,  Ming-Hsi Yeh ,  Ying-Liang Chuang

IPC: H01L21/8238 ,  H01L29/51 ,  H01L27/088 ,  H01L21/28 ,  H01L21/8234 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/49

Abstract: Embodiments of the present disclosure provide wet process based methods for modifying threshold value (Vt) of high-k metal gate using self-assembled monolayer (SAM) on dedicated transistor. In one embodiment, the method includes forming a gate structure over a substrate, the gate structure comprising a gate dielectric layer, a barrier layer formed over the gate dielectric layer, and an oxide layer formed over the barrier layer, and forming a self-assembled monolayer on the oxide layer by exposing the oxide layer to an aqueous solution containing metal oxides in a metal dissolving acid.

公开(公告)号：US10361133B2

公开(公告)日：2019-07-23

申请号：US15707990

申请日：2017-09-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ju-Li Huang ,  Chih-Long Chiang ,  Ying-Liang Chuang ,  Ming-Hsi Yeh ,  Kuo Bin Huang

IPC: H01L21/8238 ,  H01L29/51 ,  H01L27/088 ,  H01L21/28 ,  H01L21/8234 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3105

Abstract: Embodiments of the present disclosure provide wet process based methods for modifying threshold value (Vt) of high-k metal gate using self-assembled monolayer (SAM) on dedicated transistor. In one embodiment, the method includes forming a gate structure over a substrate, the gate structure comprising a gate dielectric layer, a barrier layer formed over the gate dielectric layer, and an oxide layer formed over the barrier layer, and forming a self-assembled monolayer on the oxide layer by exposing the oxide layer to an aqueous solution containing metal oxides in a metal dissolving acid.

公开(公告)号：US11990339B2

公开(公告)日：2024-05-21

申请号：US17391537

申请日：2021-08-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jian-Jou Lian ,  Yao-Wen Hsu ,  Neng-Jye Yang ,  Li-Min Chen ,  Chia-Wei Wu ,  Kuan-Lin Chen ,  Kuo Bin Huang

IPC: H01L21/027 ,  G03F7/09 ,  G03F7/20 ,  G03F7/32 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  G03F7/095 ,  H01L21/306

CPC classification number: H01L21/0273 ,  G03F7/094 ,  G03F7/20 ,  G03F7/32 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31111 ,  G03F7/095 ,  H01L21/30608

Abstract: A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.

公开(公告)号：US10676668B2

公开(公告)日：2020-06-09

申请号：US16220507

申请日：2018-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Neng-Jye Yang ,  Kuo Bin Huang ,  Ming-Hsi Yeh ,  Shun Wu Lin ,  Yu-Wen Wang ,  Jian-Jou Lian ,  Shih Min Chang

IPC: C09K13/02 ,  H01L29/66 ,  H01L21/3213 ,  C09K13/08 ,  C09K13/00

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

公开(公告)号：US20190341317A1

公开(公告)日：2019-11-07

申请号：US16517767

申请日：2019-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ju-Li Huang ,  Chih-Long Chiang ,  Kuo Bin Huang ,  Ming-Hsi Yeh ,  Ying-Liang Chuang

IPC: H01L21/8238 ,  H01L21/311 ,  H01L29/51 ,  H01L27/088 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/8234 ,  H01L21/28

Abstract: Embodiments of the present disclosure provide wet process based methods for modifying threshold value (Vt) of high-k metal gate using self-assembled monolayer (SAM) on dedicated transistor. In one embodiment, the method includes forming a gate structure over a substrate, the gate structure comprising a gate dielectric layer, a barrier layer formed over the gate dielectric layer, and an oxide layer formed over the barrier layer, and forming a self-assembled monolayer on the oxide layer by exposing the oxide layer to an aqueous solution containing metal oxides in a metal dissolving acid.

公开(公告)号：US10179878B2

公开(公告)日：2019-01-15

申请号：US15657537

申请日：2017-07-24

Applicant: Taiwan Semiconductor Manufacturing, Co., Ltd.

Inventor： Neng-Jye Yang ,  Kuo Bin Huang ,  Ming-Hsi Yeh ,  Shun Wu Lin ,  Yu-Wen Wang ,  Jian-Jou Lian ,  Shih Min Chang

IPC: H01L21/3213 ,  H01L29/66 ,  C09K13/08 ,  C09K13/02

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.