摘要:
A high electron mobility transistor (HEMT) includes a first compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A salicide source feature and a salicide drain feature are in contact with the first III-V compound layer through the second III-V compound layer. A gate electrode is disposed over a portion of the second compound layer between the salicide source feature and the salicide drain feature.
摘要:
A high electron mobility transistor (HEMT) includes a silicon substrate, an unintentionally doped gallium nitride (UID GaN) layer over the silicon substrate. The HEMT further includes a donor-supply layer over the UID GaN layer, a gate structure, a drain, and a source over the donor-supply layer. The HEMT further includes a dielectric layer having one or more dielectric plug portions in the donor-supply layer and top portions between the gate structure and the drain over the donor-supply layer. A method for making the HEMT is also provided.
摘要:
A method of forming a semiconductor structure includes growing a second III-V compound layer over a first III-V compound layer, wherein the second III-V compound layer has a different band gap from the first III-V compound layer. The method further includes forming a source feature and a drain feature over the second III-V compound layer. The method further includes forming a gate dielectric layer over the second III-V compound layer, the source feature and the drain feature. The method further includes implanting at least one fluorine-containing compound into a portion of the gate dielectric layer. The method further includes forming a gate electrode over the portion of the gate dielectric layer.
摘要:
A method includes epitaxially growing a gallium nitride (GaN) layer over a silicon substrate. The method further includes epitaxially growing a donor-supply layer over the GaN layer. The method further includes forming a source and a drain on the donor-supply layer. The method further includes forming a gate structure between the source and the drain on the donor-supply layer. The method further includes plasma etching a portion of a drift region of the donor-supply layer to a depth of less than 60% of a donor-supply layer thickness. The method further includes depositing a dielectric layer over the donor-supply layer.
摘要:
A method of forming a high electron mobility transistor (HEMT) includes epitaxially growing a second III-V compound layer on a first III-V compound layer. The method further includes partially etching the second III-V compound layer to form two through holes in the second III-V compound layer. Additionally, the method includes forming a silicon feature in each of two through holes. Furthermore, the method includes depositing a metal layer on each silicon feature. Moreover, the method includes annealing the metal layer and each silicon feature to form corresponding salicide source/drain features. The method also includes forming a gate electrode over the second III-V compound layer between the salicide source/drain features.
摘要:
A high electron mobility transistor (HEMT) includes a silicon substrate, an unintentionally doped gallium nitride (UID GaN) layer over the silicon substrate. The HEMT further includes a donor-supply layer over the UID GaN layer, a gate structure, a drain, and a source over the donor-supply layer. The HEMT further includes a dielectric layer having one or more dielectric plug portions in the donor-supply layer and top portions between the gate structure and the drain over the donor-supply layer. A method for making the HEMT is also provided.
摘要:
A circuit structure includes a substrate, a III-V semiconductor compound over the substrate, a AlxGa(1-x)N (AlGaN) layer over the III-V semiconductor compound, a gate over the AlGaN layer, a passivation film over the gate and over a portion of the AlGaN layer, a source structure, and a drain structure on an opposite side of the gate from the source structure, wherein X ranges from 0.1 to 1. The source structure has a source contact portion and an overhead portion. The overhead portion is over at least a portion of the passivation film between the source contact portion and the gate. A distance between the source contact portion and the gate is less than a distance between the gate and the drain structure.
摘要:
An integrated circuit includes a gate electrode and spacers along sidewalls of the gate electrode. The integrated circuit further includes a source/drain (S/D) region adjacent to the gate electrode. The S/D region includes a diffusion barrier structure at least partially in a recess of the substrate. The diffusion barrier structure includes an epitaxial layer having a first region and a second region. The first region is thinner than the second region, and the first region is misaligned with respect to the sidewalls of the gate electrode. The S/D region includes a doped silicon-containing structure over the diffusion barrier structure. The first region of the diffusion barrier structure is configured to partially prevent dopants of the doped silicon-containing structure from diffusing into the substrate. The second region of the diffusion barrier structure is configured to substantially completely prevent the dopants of the doped silicon-containing structure from diffusing into the substrate.
摘要翻译:集成电路包括栅电极和沿着栅电极的侧壁的间隔物。 集成电路还包括与栅电极相邻的源极/漏极(S / D)区域。 S / D区域至少部分地包括在衬底的凹部中的扩散阻挡结构。 扩散阻挡结构包括具有第一区域和第二区域的外延层。 第一区域比第二区域薄,第一区域相对于栅电极的侧壁不对准。 S / D区域包括在扩散阻挡结构上的掺杂的含硅结构。 扩散阻挡结构的第一区域被配置为部分地防止掺杂的含硅结构的掺杂剂扩散到衬底中。 扩散阻挡结构的第二区域被配置为基本上完全防止掺杂的含硅结构的掺杂剂扩散到衬底中。
摘要:
A circuit structure includes a substrate, a III-V semiconductor compound over the substrate, a AlxGa(1−x)N (AlGaN) layer over the III-V semiconductor compound, a gate over the AlGaN layer, a passivation film over the gate and over a portion of the AlGaN layer, a source structure, and a drain structure on an opposite side of the gate from the source structure, wherein X ranges from 0.1 to 1. The source structure has a source contact portion and an overhead portion. The overhead portion is over at least a portion of the passivation film between the source contact portion and the gate. A distance between the source contact portion and the gate is less than a distance between the gate and the drain structure.
摘要翻译:电路结构包括衬底,衬底上的III-V半导体化合物,III-V半导体化合物上的Al x Ga(1-x)N(AlGaN)层,AlGaN层上的栅极,栅极上的钝化膜 并且在源极结构的栅极的相对侧上的AlGaN层的一部分,源极结构和漏极结构,其中X的范围为0.1至1.源极结构具有源极接触部分和顶部部分。 顶部部分在源极接触部分和栅极之间的钝化膜的至少一部分之上。 源极接触部分和栅极之间的距离小于栅极和漏极结构之间的距离。
摘要:
A transistor includes a substrate, a channel layer over the substrate, an active layer over the channel layer, a metal diffusion barrier over the active layer, and a gate over the metal diffusion barrier. The active layer has a band gap discontinuity with the channel layer.