公开(公告)号：US4865682A

公开(公告)日：1989-09-12

申请号：US163223

申请日：1988-02-26

申请人： Takeshi Okano ,  Hisanori Fujita ,  Eiichiro Nishihara

发明人： Takeshi Okano ,  Hisanori Fujita ,  Eiichiro Nishihara

IPC分类号： C30B11/00 ,  C30B29/40

CPC分类号： C30B11/003 ,  C30B11/002 ,  Y10S117/90

摘要： In the boat growth method of the IIIb-Vb group compound, the quartz boat is tridymitized on at least the surface thereof so as to prevent wetting of the boat due to the melt of the compound and hence to enhance the yield of a single crystal.

摘要翻译： 在IIIb-Vb族化合物的舟艇生长方法中，石英舟在至少其表面上被三维化，以防止由于化合物的熔融造成船体的润湿，从而提高单晶的产率。

公开(公告)号：US4968642A

公开(公告)日：1990-11-06

申请号：US383161

申请日：1989-07-20

申请人： Hisanori Fujita ,  Masaaki Kanayama ,  Takeshi Okano

发明人： Hisanori Fujita ,  Masaaki Kanayama ,  Takeshi Okano

IPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L27/15

CPC分类号： H01L33/30 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/0262 ,  H01L27/153 ,  H01L33/0062 ,  H01L33/0066 ,  Y10S148/041 ,  Y10S148/056 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S438/936

摘要： An epitaxial wafer for producing arrays of GaAsP-LEDs comprises, in the GaAs.sub.1-x P.sub.x layer with varying X, a layer region(s) with a discontinuous variance of x along the thickness of the GaAs.sub.1-x P.sub.x layer. This layer region(s) contribute to a uniformity in the brightness of the light emission of LEDs formed in the epitaxial wafer.

公开(公告)号：US4865655A

公开(公告)日：1989-09-12

申请号：US122591

申请日：1987-11-18

申请人： Hisanori Fujita ,  Masaaki Kanayama ,  Takeshi Okano

发明人： Hisanori Fujita ,  Masaaki Kanayama ,  Takeshi Okano

IPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L27/15

CPC分类号： H01L33/30 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/0262 ,  H01L27/153 ,  H01L33/0062 ,  H01L33/0066 ,  Y10S148/041 ,  Y10S148/056 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S438/936

摘要： An epitaxial wafer for producing arrays of GaAsP-LEDs comprises, in the GaAs.sub.1-x P.sub.x layer with varying X, a layer region(s) with a discontinuous variance of x along the thickness of the GaAs.sub.1-x P.sub.x layer. This layer region(s) contribute to a uniformity in the brightness of the light emission of LEDs formed in the epitaxial wafer.

摘要翻译： 用于产生GaAsP-LED阵列的外延晶片在具有变化的X的GaAs1-xPx层中包括沿着GaAs1-xPx层的厚度具有x的不连续变化的层区域。 该层区域有助于在外延晶片中形成的LED的发光的亮度的均匀性。

公开(公告)号：US5445897A

公开(公告)日：1995-08-29

申请号：US69672

申请日：1993-06-01

申请人： Tadashige Satoh ,  Hisanori Fujita

发明人： Tadashige Satoh ,  Hisanori Fujita

IPC分类号： H01L21/20 ,  H01L33/00

CPC分类号： H01L21/02433 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262

摘要： In order to grow a GaAs.sub.1-x P.sub.x fixed-composition layer of excellent quality, which has a predetermined composition x, over a GaAs or GaP single crystal substrate, a varied-composition layer is formed between the substrate and the fixed-composition layer. The varied-composition layer comprises at least two varied-composition layer portions and at least one fixed-composition layer portion with a predetermined thickness that is formed between the varied-composition layer portions, whereby dislocations caused by lattice mismatch with the GaP substrate are settled in the varied-composition layer portions and recovered in the fixed-composition layer portion between the varied-composition layer portions, thereby minimizing the dislocations, and thus making it possible to obtain a GaAs.sub.1-x P.sub.x layer of excellent crystal quality, which has a predetermined composition x.

摘要翻译： 为了在GaAs或GaP单晶衬底上生长具有预定成分x的优良品质的GaAs1-xPx固定组成层，在衬底和固定组成层之间形成变化的组成层。 不同组成层包含至少两个变化组成层部分和至少一个具有预定厚度的固定组合物层部分，其形成在变化组合物层部分之间，由此由与GaP衬底的晶格失配引起的位错沉降 在不同组成层部分中，并且在不同组成层部分之间的固定组合物层部分中回收，从而使位错最小化，从而可以获得具有优良晶体质量的GaAs1-xPx层，其具有预定的 组合x。

公开(公告)号：US4168998A

公开(公告)日：1979-09-25

申请号：US966953

申请日：1978-12-06

申请人： Shinichi Hasegawa ,  Hisanori Fujita

发明人： Shinichi Hasegawa ,  Hisanori Fujita

IPC分类号： C30B25/18 ,  H01L21/205 ,  H01L21/302

CPC分类号： C30B25/18 ,  Y10S117/915 ,  Y10S148/006 ,  Y10S148/135

摘要： Semiconductor epitaxial wafers consisting of an epitaxial film and its substrate can be removed, in accordance with the present invention, from a substrate supporting component, without breaking the wafers into pieces after completion of vapor growth. The carbonaceous powder according to the present invention can greatly and effectively decrease the breaking of wafers, as compared with the conventional SiO.sub.2 or SiC-coated substrate supporting components.

摘要翻译： 由外延膜及其基板组成的半导体外延晶片可以根据本发明从基板支撑部件移除，而不会在完成蒸气生长之后将晶片破碎成片。 与传统的SiO 2或SiC涂覆的基底支撑组分相比，根据本发明的含碳粉末可以大大且有效地减少晶片的断裂。

公开(公告)号：US07779558B2

公开(公告)日：2010-08-24

申请号：US11631532

申请日：2005-07-04

申请人： Tsuyoshi Nishiwaki ,  Hisanori Fujita ,  Kiyomitsu Kurosaki

发明人： Tsuyoshi Nishiwaki ,  Hisanori Fujita ,  Kiyomitsu Kurosaki

IPC分类号： A43B13/28

CPC分类号： A43B13/189 ,  A43B13/181 ,  A43B13/20 ,  A43B13/206 ,  A43B21/26

摘要： A shock absorbing device for a shoe sole according to the present invention comprises: an outer sole 2; a midsole M that is disposed above the outer sole 2; and a deformation element 3 disposed between the outer sole 2 and the midsole M. The deformation element 3 is joined to the bottom surface of the midsole M and is joined to the upper surface of the outer sole 2. The deformation element has a tubular part 30 in a flat tubular form, and Young's modulus of a material constituting the tubular part 30 is greater than both that of a material constituting the midsole M and that of a material constituting the outer sole 2. The tubular part has a lower portion that is curved so as to be convex downwards and thereby undergoes bending deformation due to a shock at landing.

摘要翻译： 根据本发明的用于鞋底的减震装置包括：外底2; 设置在外底2的上方的中底M; 以及设置在外底2和中底M之间的变形元件3.变形元件3接合到中底M的底面，并且与外底2的上表面接合。变形元件具有管状部 30，并且构成管状部件30的材料的杨氏模量大于构成中底M的材料和构成外底2的材料的杨氏模量。管状部分具有下部，即， 弯曲成向下凸起，从而由于在着陆时的冲击而经历弯曲变形。

公开(公告)号：USD561434S1

公开(公告)日：2008-02-12

申请号：US29270593

申请日：2006-12-28

申请人： Hisanori Fujita ,  Akira Usuki

设计人： Hisanori Fujita ,  Akira Usuki

公开(公告)号：US5316574A

公开(公告)日：1994-05-31

申请号：US5975

申请日：1993-01-19

申请人： Hisanori Fujita ,  Mikihiko Nakanishi

发明人： Hisanori Fujita ,  Mikihiko Nakanishi

IPC分类号： C09D11/00 ,  C09D11/16 ,  C09D11/17

CPC分类号： C09D11/16

摘要： An erasable ink composition for writing on an impervious writing surface comprising an organic solvent, a resin, a pigment, and a separating agent which comprises a polyoxyethylene polyoxypropylene monoalkyl ether which is liquid at normal temperatures in an amount of 5-20% by weight, and optionally at least one organic compound selected from the group consisting of a carboxylic acid ester and a polyoxypropylene monoalkyl ether which is liquid at normal temperatures in an amount of 2-10% by weight in conjunction.

摘要翻译： 一种用于书写在不透水书写表面上的可擦墨水组合物，包括有机溶剂，树脂，颜料和分离剂，其包含在常温下为5-20重量％液体的聚氧乙烯聚氧丙烯单烷基醚， 和任选的至少一种选自羧酸酯和聚氧丙烯单烷基醚的有机化合物，其在常温下为2-10重量％的液体。

公开(公告)号：US4756792A

公开(公告)日：1988-07-12

申请号：US904178

申请日：1986-09-05

申请人： Hisanori Fujita ,  Masaaki Kanayama

发明人： Hisanori Fujita ,  Masaaki Kanayama

IPC分类号： H01L21/20 ,  C30B25/02 ,  C30B25/16 ,  H01L21/18 ,  H01L21/205 ,  C30B25/12 ,  C30B25/22

CPC分类号： H01L21/02546 ,  C30B25/02 ,  C30B29/42 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02658

摘要： In a GaAs epitaxial wafer including, for example, two epitaxial layers having high and low carrier concentrations, the carrier concentration of the low carrier concentration layer is liable to greatly vary, so that wafers suitable for FETs and Schottky barrier diodes operated at UHF and SHF are produced at only a low yield. This drawback is eliminated by adjusting the heating temperature of GaAs substrate to 690.degree. to 730.degree. C. during the growth of the low carrier concentration layer.

摘要翻译： 在包括例如具有高和低载流子浓度的两个外延层的GaAs外延晶片中，低载流子浓度层的载流子浓度易于大大变化，使得适用于FET的肖特基势垒二极管和肖特基势垒二极管在UHF和SHF 仅以低产量生产。 通过在低载流子浓度层的生长期间将GaAs衬底的加热温度调节至690℃至730℃来消除该缺点。

公开(公告)号：US4252576A

公开(公告)日：1981-02-24

申请号：US55377

申请日：1979-07-06

申请人： Shinichi Hasegawa ,  Hisanori Fujita

发明人： Shinichi Hasegawa ,  Hisanori Fujita

IPC分类号： C30B25/02 ,  C30B29/42 ,  H01L21/205 ,  H01L33/16 ,  H01L33/30 ,  H01L33/34 ,  H01L29/12 ,  H01L21/20

CPC分类号： H01L33/30 ,  H01L33/0008 ,  H01L33/0025 ,  H01L33/305 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/119

摘要： An epitaxial wafer of GaAs.sub.1-x P.sub.x has been doped with nitrogen and used for the production of light emitting diode (LED). The carrier concentration of the conventional GaAs.sub.1-x P.sub.x was from 3.times.10.sup.16 to 2.times.10.sup.17 /cm.sup.3.According to the present invention, the carrier concentration is reduced lower than the conventional concentration and the luminance of LED is increased approximately two or three times the conventional luminance.

摘要翻译： GaAs1-xPx的外延晶片已经掺杂氮气，用于生产发光二极管（LED）。 常规GaAs1-xPx的载流子浓度为3×10 16至2×10 17 / cm 3。 根据本发明，载流子浓度比常规浓度降低，并且LED的亮度增加约为传统亮度的两倍或三倍。