Integrated electronic hardware for wafer processing control and diagnostic
    1.
    发明授权
    Integrated electronic hardware for wafer processing control and diagnostic 有权
    用于晶圆处理控制和诊断的集成电子硬件

    公开(公告)号:US06622286B1

    公开(公告)日:2003-09-16

    申请号:US09608599

    申请日:2000-06-30

    IPC分类号: G06F1750

    摘要: A central controller for use in a semiconductor manufacturing equipment integrates a plurality of controllers with an open architecture allowing real-time communication between the various control loops. The central controller includes at least one central processing unit (CPU) executing high level input output (i/o) and control algorithms and at least one integrated i/o controller providing integrated interface to sensors and control hardware. The integrated i/o controller performs basic i/o and low level control functions and communicates with the CPU through a bus to perform or enable controls of various subsystems of the semiconductor manufacturing equipment.

    摘要翻译: 用于半导体制造设备的中央控制器将多个控制器与允许各种控制回路之间的实时通信的开放架构集成。 中央控制器包括执行高电平输入输出(i / o)和控制算法的至少一个中央处理单元(CPU)以及提供与传感器和控制硬件的集成接口的至少一个集成i / o控制器。 集成i / o控制器执行基本的I / O和低级控制功能,并通过总线与CPU进行通信,以执行或启用对半导体制造设备的各种子系统的控制。

    Integrated full wavelength spectrometer for wafer processing
    2.
    发明授权
    Integrated full wavelength spectrometer for wafer processing 有权
    集成全波长光谱仪用于晶圆加工

    公开(公告)号:US06526355B1

    公开(公告)日:2003-02-25

    申请号:US09539312

    申请日:2000-03-30

    IPC分类号: G06F1900

    摘要: A process chamber with a computer system that controls the process chamber is connected to one or more spectrometers. The spectrometers may be part of an interferometer or may be an optical emission spectrometer. The spectrometers may be CCD or photodiode arrays of 2,048 elements. An input board forms part of the computer system and is directly connected to the spectrometers. The input board provides data from the spectrometers to dual port memory, which is directly accessible to the CPU of the computer system. The use of a state machine and adder on the input board allows computation and placement of the data from the spectrometers on to the dual port memory, so that the CPU is not needed for such placement.

    摘要翻译: 具有控制处理室的计算机系统的处理室连接到一个或多个光谱仪。 光谱仪可以是干涉仪的一部分,也可以是光发射光谱仪。 光谱仪可以是2,048个元件的CCD或光电二极管阵列。 输入板构成计算机系统的一部分,并直接连接到光谱仪。 输入板将数据从光谱仪提供给双端口存储器,可直接访问计算机系统的CPU。 在输入板上使用状态机和加法器允许将数据从光谱仪计算和放置到双端口存储器,以便CPU不需要这样的放置。

    PLASMA PROCESSING METHOD AND APPARATUS WITH CONTROL OF PLASMA EXCITATION POWER
    3.
    发明申请
    PLASMA PROCESSING METHOD AND APPARATUS WITH CONTROL OF PLASMA EXCITATION POWER 有权
    等离子体处理方法和控制等离子体激发能量的装置

    公开(公告)号:US20110253673A1

    公开(公告)日:2011-10-20

    申请号:US13172917

    申请日:2011-06-30

    IPC分类号: C23F1/00 C23F1/08

    摘要: The amount of RF power supplied to a plasma in a vacuum plasma processing chamber is gradually changed on a preprogrammed basis in response to signals stored in a computer memory. The computer memory stores signals so that other processing chamber parameters (pressure, gas species and gas flow rates) remain constant while the gradual change occurs. The stored signals enable rounded corners, instead of sharp edges, to be etched, e.g., at an intersection of a trench wall and base.

    摘要翻译: 响应于存储在计算机存储器中的信号,提供给真空等离子体处理室中的等离子体的RF功率的量在预编程的基础上逐渐改变。 计算机存储器存储信号,使得其他处理室参数(压力,气体种类和气体流速)在发生逐渐变化时保持恒定。 存储的信号使得能够蚀刻圆形拐角而不是锋利的边缘,例如在沟槽壁和基部的交叉处。

    Etch endpoint detection
    4.
    发明授权
    Etch endpoint detection 有权
    蚀刻端点检测

    公开(公告)号:US06855567B1

    公开(公告)日:2005-02-15

    申请号:US09586530

    申请日:2000-05-31

    摘要: A method for determining an endpoint for etching a layer includes steps of estimating the etch endpoint and, during etch, directing radiant energy at two or more wavelengths onto the layer to be etched, detecting the last intensity maximum reflected at a first wavelength prior to the estimated etch endpoint, and detecting the intensity maximum reflected at a second wavelength first occurring after the last intensity maximum at the first wavelength. Also, a method for determining an endpoint for etching a layer having an approximate initial thickness by steps of, during etch, directing radiant energy at three or more wavelengths onto the layer to be etched; selecting first, second, and third wavelengths; approximating an etch rate from the time interval between a first detected intensity minimum and an adjacent intensity maximum reflected at the third wavelength, estimating an etch endpoint from the approximate initial thickness of the layer and the approximate etch rate; detecting the last intensity maximum reflected at the first wavelength prior to the estimated etch endpoint; and detecting the intensity maximum reflected at the second wavelength first occurring after the last intensity maximum at the first wavelength. The material making up the layer is at least partly transparent to both the first and the second wavelength. The first wavelength is longer than both the second wavelength and the third wavelength. In some embodiments the third wavelength is longer than the second wavelength. The endpoint is at the point of intensity maximum of the second wavelength or is at a point following an interval thereafter.

    摘要翻译: 用于确定用于蚀刻层的端点的方法包括以下步骤:估计蚀刻端点,并且在蚀刻期间将两个或更多波长的辐射能引导到待蚀刻的层上,检测在第一波长之前反射的最后强度最大值 并且检测在第一波长的最后强度最大值之后首先出现的第二波长反射的强度最大值。 而且,一种用于确定用于蚀刻具有近似初始厚度的层的端点的方法,该蚀刻步骤在蚀刻期间将三个或更多个波长的辐射能引导到待蚀刻的层上; 选择第一,第二和第三波长; 从第一检测强度最小值和在第三波长反射的相邻强度最大值之间的时间间隔近似蚀刻速率,从该层的近似初始厚度估计蚀刻终点和近似蚀刻速率; 在估计的蚀刻端点之前检测在第一波长处反射的最后强度最大值; 并且检测在第一波长的最后强度最大值之后首先出现的第二波长反射的强度最大值。 构成该层的材料对于第一和第二波长至少部分透明。 第一波长比第二波长和第三波长长。 在一些实施例中,第三波长比第二波长长。 端点处于第二波长的强度最大点处,或者在其后的间隔处。

    ARRANGEMENT FOR IDENTIFYING UNCONTROLLED EVENTS AT THE PROCESS MODULE LEVEL AND METHODS THEREOF
    6.
    发明申请
    ARRANGEMENT FOR IDENTIFYING UNCONTROLLED EVENTS AT THE PROCESS MODULE LEVEL AND METHODS THEREOF 有权
    在过程模块级别识别非受控事件的安排及其方法

    公开(公告)号:US20100332012A1

    公开(公告)日:2010-12-30

    申请号:US12555674

    申请日:2009-09-08

    IPC分类号: G05B9/02 G06F9/50 G06F11/20

    摘要: A process-level troubleshooting architecture (PLTA) configured to facilitate substrate processing in a plasma processing system is provided. The architecture includes a process module controller. The architecture also includes a plurality of sensors, wherein each sensor of the plurality of sensors communicates with the process module controller to collect sensed data about one or more process parameters. The architecture further includes a process-module-level analysis server, wherein the process-module-level analysis server communicates directly with the plurality of sensors and the process module controller. The process-module-level analysis server is configured for receiving data, wherein the data include at least one of the sensed data from the plurality of sensors and process module and chamber data from the process module controller. The process-module-level analysis server is also configured for analyzing the data and sending interdiction data directly to the process module controller when a problem is identified during the substrate processing.

    摘要翻译: 提供了一种配置为促进等离子体处理系统中的基板处理的过程级故障排除架构(PLTA)。 该架构包括一个进程模块控制器。 该架构还包括多个传感器,其中多个传感器中的每个传感器与过程模块控制器通信以收集关于一个或多个过程参数的感测数据。 该体系结构还包括一个过程模块级分析服务器,其中过程模块级分析服务器与多个传感器和过程模块控制器直接通信。 过程模块级分析服务器被配置为用于接收数据,其中数据包括来自多个传感器的感测数据中的至少一个以及来自处理模块控制器的处理模块和室数据。 过程模块级分析服务器还被配置为当在衬底处理期间识别出问题时,分析数据并将拦截数据直接发送到过程模块控制器。

    Automatic dynamic baseline creation and adjustment
    7.
    发明授权
    Automatic dynamic baseline creation and adjustment 有权
    自动动态基线创建和调整

    公开(公告)号:US07899627B2

    公开(公告)日:2011-03-01

    申请号:US11536577

    申请日:2006-09-28

    IPC分类号: G06F19/00 H01L21/00

    CPC分类号: H01J37/3299 H01J37/32935

    摘要: In a plasma processing system, a method for dynamically establishing a baseline is provided. The method includes processing a first substrate. The method also includes collecting a first signal data for the first substrate. The method further includes comparing the first signal data against the baseline. The method moreover includes including the first signal data in a recalculation of the baseline if the first signal data is within a confidence level range, which is in between a top level above the baseline and a bottom level below the baseline.

    摘要翻译: 在等离子体处理系统中,提供了用于动态建立基线的方法。 该方法包括处理第一衬底。 该方法还包括收集第一基底的第一信号数据。 该方法还包括将第一信号数据与基线进行比较。 该方法还包括如果第一信号数据在置信水平范围内的第一信号数据重新计算基线,其置于高于基线的最高水平和低于基线的底部水平之间。

    COMPONENT-TRACKING SYSTEM AND METHODS THEREFOR
    8.
    发明申请
    COMPONENT-TRACKING SYSTEM AND METHODS THEREFOR 有权
    组件跟踪系统及其方法

    公开(公告)号:US20100325084A1

    公开(公告)日:2010-12-23

    申请号:US12869016

    申请日:2010-08-26

    IPC分类号: G06F17/00 G06F17/30

    摘要: A system for facilitating plasma processing tool component management across plurality of tools is provided. The system includes means for receiving first component data for first plurality of components, including identification and usage history for a first plurality of components, at first database associated with first tool. The system also includes means for receiving second component data for second plurality of components at second database associated with second tool, which is different from first tool. The system further includes means for synchronizing first and second component data with third database. The synchronizing includes synchronizing between third database and at least one of first and second database rules that govern usage of at least one component of first and second plurality of components. The third database is coupled to exchange data with plurality of tools. The system yet also includes means for obtaining information, using rules and usage history data about given component prior to performing one of replacement, analysis, and maintenance.

    摘要翻译: 提供了一种用于促进跨多个工具的等离子体处理工具部件管理的系统。 该系统包括用于在与第一工具相关联的第一数据库处接收用于第一多个组件的第一组件数据的装置,包括用于第一多个组件的标识和使用历史。 该系统还包括用于在与第二工具相关联的第二数据库处接收与第一工具不同的第二数据组件的第二组件数据的装置。 该系统还包括用于将第一和第二组件数据与第三数据库同步的装置。 同步包括在第三数据库与管理第一和第二多个组件的至少一个组件的使用的第一和第二数据库规则中的至少一个之间进行同步。 第三数据库被耦合以与多个工具交换数据。 该系统还包括在执行替换,分析和维护之前获得信息,使用关于给定组件的规则和使用历史数据的装置。

    Dynamic component-tracking system and methods therefor
    9.
    发明授权
    Dynamic component-tracking system and methods therefor 有权
    动态组件跟踪系统及其方法

    公开(公告)号:US07814046B2

    公开(公告)日:2010-10-12

    申请号:US11537517

    申请日:2006-09-29

    IPC分类号: G06F17/00

    摘要: A computer-implemented method for facilitating plasma processing tool component management across plurality of tools is provided. The method includes receiving first component data for first plurality of components, including identification and usage history, at first database associated with first tool. The method also includes receiving second component data for second plurality of components at second database associated with second tool, which is different from first tool. The method further includes synchronizing first and second component data with third database. The synchronizing includes synchronizing between third database and at least one of first and second database rules that govern usage of at least one component of first and second plurality of components. The third database is coupled to exchange data with plurality of tools. The method yet also includes obtaining information, using rules and usage history data about given component prior to performing one of replacement, analysis, and maintenance.

    摘要翻译: 提供了一种用于促进跨多个工具的等离子体处理工具部件管理的计算机实现的方法。 该方法包括在与第一工具相关联的第一数据库处接收包括标识和使用历史的第一多个组件的第一组件数据。 该方法还包括在与第二工具相关联的第二数据库处接收与第一工具不同的第二多个组件的第二组件数据。 该方法还包括将第一和第二组件数据与第三数据库同步。 同步包括在第三数据库与管理第一和第二多个组件的至少一个组件的使用的第一和第二数据库规则中的至少一个之间进行同步。 第三数据库被耦合以与多个工具交换数据。 该方法还包括在执行替换,分析和维护之前获得信息,使用关于给定组件的规则和使用历史数据。

    Processing information management system in a plasma processing tool
    10.
    发明授权
    Processing information management system in a plasma processing tool 有权
    在等离子处理工具中处理信息管理系统

    公开(公告)号:US08000827B2

    公开(公告)日:2011-08-16

    申请号:US12711163

    申请日:2010-02-23

    IPC分类号: G06F19/00

    摘要: A plasma-processing tool for processing a substrate using at least a first process recipe and a second process recipe is provided. The plasma-processing tool includes transducers configured to collect process data streams, each process data stream pertaining to a process parameter being monitored during recipe execution. The tool also includes a logic circuitry configured for receiving a set of meta-data wherein each meta-data includes identification data about the substrate and the process recipe being executed. The logic circuitry is also configured for receiving a set of process data streams, each of which being associated with a specific process recipe. The logic circuitry further includes storing the meta-data and the process data streams associated with the first process recipe as a first file and the meta-data and the process data streams associated with the second process recipe as a second file.

    摘要翻译: 提供了一种用于使用至少第一处理配方和第二处理配方来处理衬底的等离子体处理工具。 等离子体处理工具包括被配置为收集过程数据流的换能器,与在配方执行期间被监控的过程参数相关的每个过程数据流。 该工具还包括配置用于接收一组元数据的逻辑电路,其中每个元数据包括关于衬底的识别数据和正在执行的工艺配方。 逻辑电路还被配置为用于接收一组过程数据流,每个过程数据流与特定的处理配方相关联。 逻辑电路还包括将与第一处理配方相关联的元数据和过程数据流存储为第一文件,将与第二处理配方关联的元数据和过程数据流存储为第二文件。