摘要:
A central controller for use in a semiconductor manufacturing equipment integrates a plurality of controllers with an open architecture allowing real-time communication between the various control loops. The central controller includes at least one central processing unit (CPU) executing high level input output (i/o) and control algorithms and at least one integrated i/o controller providing integrated interface to sensors and control hardware. The integrated i/o controller performs basic i/o and low level control functions and communicates with the CPU through a bus to perform or enable controls of various subsystems of the semiconductor manufacturing equipment.
摘要:
A process chamber with a computer system that controls the process chamber is connected to one or more spectrometers. The spectrometers may be part of an interferometer or may be an optical emission spectrometer. The spectrometers may be CCD or photodiode arrays of 2,048 elements. An input board forms part of the computer system and is directly connected to the spectrometers. The input board provides data from the spectrometers to dual port memory, which is directly accessible to the CPU of the computer system. The use of a state machine and adder on the input board allows computation and placement of the data from the spectrometers on to the dual port memory, so that the CPU is not needed for such placement.
摘要:
The amount of RF power supplied to a plasma in a vacuum plasma processing chamber is gradually changed on a preprogrammed basis in response to signals stored in a computer memory. The computer memory stores signals so that other processing chamber parameters (pressure, gas species and gas flow rates) remain constant while the gradual change occurs. The stored signals enable rounded corners, instead of sharp edges, to be etched, e.g., at an intersection of a trench wall and base.
摘要:
A method for determining an endpoint for etching a layer includes steps of estimating the etch endpoint and, during etch, directing radiant energy at two or more wavelengths onto the layer to be etched, detecting the last intensity maximum reflected at a first wavelength prior to the estimated etch endpoint, and detecting the intensity maximum reflected at a second wavelength first occurring after the last intensity maximum at the first wavelength. Also, a method for determining an endpoint for etching a layer having an approximate initial thickness by steps of, during etch, directing radiant energy at three or more wavelengths onto the layer to be etched; selecting first, second, and third wavelengths; approximating an etch rate from the time interval between a first detected intensity minimum and an adjacent intensity maximum reflected at the third wavelength, estimating an etch endpoint from the approximate initial thickness of the layer and the approximate etch rate; detecting the last intensity maximum reflected at the first wavelength prior to the estimated etch endpoint; and detecting the intensity maximum reflected at the second wavelength first occurring after the last intensity maximum at the first wavelength. The material making up the layer is at least partly transparent to both the first and the second wavelength. The first wavelength is longer than both the second wavelength and the third wavelength. In some embodiments the third wavelength is longer than the second wavelength. The endpoint is at the point of intensity maximum of the second wavelength or is at a point following an interval thereafter.
摘要:
The amount of RF power supplied to a plasma in a vacuum plasma processing chamber is gradually changed on a preprogrammed basis in response to signals stored in a computer memory. The computer memory stores signals so that other processing chamber parameters (pressure, gas species and gas flow rates) remain constant while the gradual change occurs. The stored signals enable rounded corners, instead of sharp edges, to be etched, e.g., at an intersection of a trench wall and base.
摘要:
A process-level troubleshooting architecture (PLTA) configured to facilitate substrate processing in a plasma processing system is provided. The architecture includes a process module controller. The architecture also includes a plurality of sensors, wherein each sensor of the plurality of sensors communicates with the process module controller to collect sensed data about one or more process parameters. The architecture further includes a process-module-level analysis server, wherein the process-module-level analysis server communicates directly with the plurality of sensors and the process module controller. The process-module-level analysis server is configured for receiving data, wherein the data include at least one of the sensed data from the plurality of sensors and process module and chamber data from the process module controller. The process-module-level analysis server is also configured for analyzing the data and sending interdiction data directly to the process module controller when a problem is identified during the substrate processing.
摘要:
In a plasma processing system, a method for dynamically establishing a baseline is provided. The method includes processing a first substrate. The method also includes collecting a first signal data for the first substrate. The method further includes comparing the first signal data against the baseline. The method moreover includes including the first signal data in a recalculation of the baseline if the first signal data is within a confidence level range, which is in between a top level above the baseline and a bottom level below the baseline.
摘要:
A system for facilitating plasma processing tool component management across plurality of tools is provided. The system includes means for receiving first component data for first plurality of components, including identification and usage history for a first plurality of components, at first database associated with first tool. The system also includes means for receiving second component data for second plurality of components at second database associated with second tool, which is different from first tool. The system further includes means for synchronizing first and second component data with third database. The synchronizing includes synchronizing between third database and at least one of first and second database rules that govern usage of at least one component of first and second plurality of components. The third database is coupled to exchange data with plurality of tools. The system yet also includes means for obtaining information, using rules and usage history data about given component prior to performing one of replacement, analysis, and maintenance.
摘要:
A computer-implemented method for facilitating plasma processing tool component management across plurality of tools is provided. The method includes receiving first component data for first plurality of components, including identification and usage history, at first database associated with first tool. The method also includes receiving second component data for second plurality of components at second database associated with second tool, which is different from first tool. The method further includes synchronizing first and second component data with third database. The synchronizing includes synchronizing between third database and at least one of first and second database rules that govern usage of at least one component of first and second plurality of components. The third database is coupled to exchange data with plurality of tools. The method yet also includes obtaining information, using rules and usage history data about given component prior to performing one of replacement, analysis, and maintenance.
摘要:
A plasma-processing tool for processing a substrate using at least a first process recipe and a second process recipe is provided. The plasma-processing tool includes transducers configured to collect process data streams, each process data stream pertaining to a process parameter being monitored during recipe execution. The tool also includes a logic circuitry configured for receiving a set of meta-data wherein each meta-data includes identification data about the substrate and the process recipe being executed. The logic circuitry is also configured for receiving a set of process data streams, each of which being associated with a specific process recipe. The logic circuitry further includes storing the meta-data and the process data streams associated with the first process recipe as a first file and the meta-data and the process data streams associated with the second process recipe as a second file.