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1.发明申请公开(公告)号：US20100308442A1
公开(公告)日：2010-12-09
申请号：US12795950
申请日：2010-06-08
申请人： Yasuhiro NAKA , Naotaka TANAKA , Toshihide UEMATSU , Chuichi MIYAZAKI , Kazunari SUZUKI , Yasuyuki NAKAJIMA , Yoshiyuki ABE , Kenji KOHZU , Kosuke KITAICHI , Shinya OGANE
发明人： Yasuhiro NAKA , Naotaka TANAKA , Toshihide UEMATSU , Chuichi MIYAZAKI , Kazunari SUZUKI , Yasuyuki NAKAJIMA , Yoshiyuki ABE , Kenji KOHZU , Kosuke KITAICHI , Shinya OGANE
IPC分类号： H01L23/498 , H01L23/544 , H01L21/60
CPC分类号： H01L24/11 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05571 , H01L2224/05644 , H01L2224/06102 , H01L2224/13022 , H01L2224/13099 , H01L2224/16 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01052 , H01L2924/01055 , H01L2924/01056 , H01L2924/01064 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/10158 , H01L2924/1306 , H01L2924/30105 , H01L2924/30107 , H01L2924/00 , H01L2224/05552 , H01L2924/00014
摘要： In a state where an adhesive tape is attached onto a main surface of a semiconductor wafer, a trench is formed in a rear surface of the semiconductor wafer. For forming the trench in the rear surface of the semiconductor wafer, after coating a resist film on the rear surface of the semiconductor wafer, the resist film is patterned by using the photolithography technology. The patterning of the resist film is performed so as not to leave the resist film in the region where the trench is to be formed. Then, the trench is formed in a predetermined region of the semiconductor wafer by the dry etching technology using the patterned resist film as a mask. Specifically, the trench is formed in the region near the dicing line.
摘要翻译： 在粘合带附着到半导体晶片的主表面上的状态下，在半导体晶片的后表面上形成沟槽。 为了在半导体晶片的后表面中形成沟槽，在半导体晶片的后表面上涂覆抗蚀剂膜之后，通过使用光刻技术对抗蚀剂膜进行构图。 进行抗蚀剂膜的图案化，以便不在要形成沟槽的区域中留下抗蚀剂膜。 然后，通过使用图案化的抗蚀剂膜作为掩模的干蚀刻技术，在半导体晶片的预定区域中形成沟槽。 具体地说，在切割线附近的区域形成沟槽。
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2.发明申请公开(公告)号：US20120108055A1
公开(公告)日：2012-05-03
申请号：US13345235
申请日：2012-01-06
IPC分类号： H01L21/768
CPC分类号： H01L24/16 , H01L21/6835 , H01L21/7682 , H01L21/76898 , H01L23/481 , H01L24/83 , H01L24/90 , H01L25/0657 , H01L25/50 , H01L2221/68372 , H01L2224/0401 , H01L2224/0557 , H01L2224/05571 , H01L2224/05572 , H01L2224/1134 , H01L2224/13025 , H01L2224/13099 , H01L2224/16145 , H01L2224/16147 , H01L2224/16225 , H01L2224/16237 , H01L2224/73204 , H01L2224/81141 , H01L2224/81191 , H01L2224/838 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/00012 , H01L2224/05552
摘要： After forming a ring-shaped trench penetrating through a semiconductor substrate from a rear surface side thereof and forming an insulating film inside the trench and on the rear surface of the semiconductor substrate, a through hole is formed in the insulating film and semiconductor substrate on an inner side of the ring-shaped trench from the rear surface side, thereby exposing a surface protection insulating film formed on a front surface of the semiconductor substrate at a bottom of the through hole. After removing the surface protection insulating film at the bottom of the through hole to form an opening to expose an element surface electrode, a contact electrode connected to the element surface electrode is formed on inner walls of the through hole and opening, and a pad electrode made of the same layer as the contact electrode is formed on the rear surface of the semiconductor substrate.
摘要翻译： 在形成从其后表面侧穿过半导体衬底的环形沟槽形成并在沟槽内部和半导体衬底的后表面上形成绝缘膜之后，在绝缘膜和半导体衬底上形成通孔 从后表面侧的环形沟槽的内侧，露出在通孔的底部形成在半导体衬底的前表面上的表面保护绝缘膜。 在去除通孔底部的表面保护绝缘膜以形成露出元件表面电极的开口之后，在通孔和开口的内壁上形成连接到元件表面电极的接触电极，并且焊盘电极 由与所述接触电极相同的层形成在所述半导体衬底的后表面上。
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公开(公告)号：US20090309218A1
公开(公告)日：2009-12-17
申请号：US12483751
申请日：2009-06-12
CPC分类号： H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/05025 , H01L2224/05144 , H01L2224/05155 , H01L2224/05553 , H01L2224/0557 , H01L2224/05572 , H01L2224/1134 , H01L2224/13025 , H01L2224/13099 , H01L2224/81136 , H01L2224/81801 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06555 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/12044 , H01L2924/14 , H01L2924/19043 , H01L2924/30107 , H01L2924/00014 , H01L2224/05552
摘要： When a through-hole electrode and a rear-surface wire are formed on a rear surface of a chip, a convex portion is formed on the rear surface of the chip due to a rear-surface wiring pad which is a part of the through-hole electrode and the rear-surface wire. This causes the air leakage when the chip is sucked, and therefore, the reduction of the sucking force of the chip occurs. A concave portion is formed in advance in a region where a rear-surface wiring pad and a rear-surface wire are formed. The rear-surface wiring pad and the rear-surface wire are provided inside the concave portion. Thus, a flatness of the rear surface of the chip is ensured by a convex portion caused by thicknesses of the rear-surface wiring pad and the rear-surface wire, so that the reduction of the sucking force does not occur when the chip is handled.
摘要翻译： 当在芯片的后表面上形成通孔电极和后表面线时，由于作为通孔的一部分的后表面布线板，在芯片的后表面上形成凸部， 孔电极和后表面电线。 这导致当芯片被吸入时的空气泄漏，因此发生芯片的吸力的降低。 预先在形成背面布线衬垫和背面导线的区域中形成凹部。 后表面布线板和后表面布线设置在凹部内。 因此，通过由背面布线衬垫和后表面线的厚度引起的凸部来确保芯片的后表面的平坦度，使得当处理芯片时不会发生吸力的降低 。
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