Abstract:
There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.
Abstract:
There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.
Abstract:
A semiconductor device includes: a first semiconductor layer of a first conductivity type; an insulation layer on the first semiconductor layer; a second semiconductor layer in the insulation layer; an active element in the second semiconductor layer; a first semiconductor region on the first semiconductor layer and of a second conductivity type; a second semiconductor region in the first semiconductor region and of the second conductivity type with a higher impurity concentration than the first semiconductor region; a first conductor in a through hole in the insulation layer and connected to the second semiconductor region; a second conductor above or within the insulation layer, the second conductor surrounding the first conductor such that an outside edge thereof is outside the second semiconductor region; a third conductor connecting the first and second conductors; and a fourth conductor connected to the first semiconductor layer.
Abstract:
The present invention relates to a data protection (310) for preventing data from being erroneously written in a data holding circuit (307). A data protection circuit (311) receives a data protection set release select signal Sa provided by a processor (330), thereby causing a second timer (316) to start timing. The data protection circuit (311) further detects the level of a chip select signal CS provided by a power supply monitoring circuit (320) after the second timer (316) timed the time interval T2 and provides a data protection signal DP corresponding to the signal Sa to the data holding circuit (307) only in the case that the data protection circuit (311) judged that the main power supply (305) is at normal state.
Abstract:
The present invention provides a voltage controlled oscillating circuit comprising a multi-staged phase inversion circuit composed of 4 or more even-number stages of phase inversion devices connected in series; and a switch circuit having a delay time characteristic similar to that of said phase inversion circuit, wherein the switch circuit satisfies oscillation conditions by converting an output phase of the even-numbered inverters connected in series into a phase that is the same as those of the outputs of odd-numbered inverters connected in series; thereby obtaining timing signals having a period equal to 1/N of the oscillation period.
Abstract:
A fire-resistant, light weight construction material is prepared by subjecting fly ash and/or paper sludge incineration ash to a swelling treatment with a mineral acid to prepare a slurry; and kneading, shaping and hardening the slurry.
Abstract:
Loading and solidifying of a cosmetic material is achieved by dripping a viscous cosmetic material into a container having a filter bottom, interposing a liquid absorbent membrance between the container and a presser, compressing the cosmetic material by the presser with the membrance interposed therebetween, and squeezing a solvent from the cosmetic material through the filter during such compression. A supporting block holds the container in position for it to be subjected to vacuum suction. The presser includes inner and outer pressing blocks and drives for moving the pressing blocks. The inner block is capable of fitting into the container to compress the cosmetic material, while the outer block abuts against the upper rim of the container.
Abstract:
A floating magnetic head including a non-magnetic substrate having a two-phase structure which substrate is used as a slider so as to enable a coefficient of thermal expansion to be controlled over a wide range. In air bearing surface is made to be properly rough to improve CSS characteristics of a floating magnetic head. A non-magnetic substrate material contains MnO, NiO, as main components, and Al.sub.2 O.sub.3, as a sub composition, or a part of the sub component is replaced by at least one substance selected from a group consisting of CaO, Y.sub.2 O .sub.3, ZrO .sub.3, ZnO, SrO. The non-magnetic substrate material has a two-phase structure including a rock salt type structure of (MnO, NiO) and a spinel structure of (MnO, NiO) Al.sub.2 O.sub.3 or (MnO, NiO) Al.sub.2 O.sub.3 containing at least one substance selected from a group consisting of CaO, Y.sub.2 O.sub.3, ZrO.sub.3, ZnO, SrO. An average grain size of the substrate is from 5 to 15 .mu.m.
Abstract translation:包括具有两相结构的非磁性基板的浮动磁头,该基板用作滑块,以便能够在宽范围内控制热膨胀系数。 使空气轴承表面适当粗糙,以改善浮动磁头的CSS特性。 非磁性基板材料含有MnO,NiO作为主要成分,作为副组成的Al 2 O 3或其一部分被选自CaO,Y 2 O 3,ZrO 3中的至少一种物质所代替 ,ZnO,SrO。 非磁性基板材料具有包括(MnO,NiO)的岩盐型结构和(MnO,NiO)Al 2 O 3或(MnO,NiO)Al 2 O 3的尖晶石结构的两相结构,其含有至少一种选自 由CaO,Y2O3,ZrO3,ZnO,SrO组成的组。 基材的平均粒径为5〜15μm。
Abstract:
A method for bonding two objects by means of the following two adhesives:(A) a moisture-inducible room temperature anion polymerization curing adhesive composed essentially of at least one anion polymerizable compound selected from the group consisting of an .alpha.-cyanoacrylate compound, and a 1,1-disubstituted diene compound;and(B) a room temperature self-curing adhesive containing from 0.05 to 50% by weight of an anion polymerization accelerator, said self-curing adhesive being selected from the group consisting of (1) a room temperature moisture-curing adhesive, (2) a room temperature curing two-part type epoxy resin adhesive, and (3) a room temperature curing synthetic resin aqueous emulsion adhesive, which comprises applying said two adhesives (A) and (B) at the bonding interface of the objects so that they do not contact each other and pressing the objects to each other to bring the two adhesives in contact with each other.
Abstract:
A method for bonding two objects by means of the following two adhesives:(A) a moisture-inducible room temperature anion polymerization curing adhesive composed essentially of at least one anion polymerizable compound selected from the group consisting of an .alpha.-cyanoacrylate compound of the formula: ##STR1## wherein R is an alkyl group having from 1 to 16 carbon atoms, an alkoxyalkyl group having 2 to 16 carbon atoms, a haloalkyl group having from 1 to 16 carbon atoms, a cyanoalkyl group having from 2 to 16 carbon atoms, an aralkyl group having from 6 to 12 atoms, an acyloxyalkyl group having from 2 to 16 carbon atoms, a cycloalkyl group having from 3 to 16 carbon atoms, an alkenyl group having from 2 to 16 carbon atoms or an aryl group having from 6 to 12 carbon atoms, and a 1,1-disubstituted diene compound of the formula: ##STR2## wherein each of R.sup.1 and R.sup.2 which may be the same or different, is a hydrogen atom, an alkyl group having from 1 to 5 carbon atoms, an aryl group, an aralkyl group having from 6 to 12 carbon atoms or a halogen atom, R.sup.3 is a hydrogen atom or a methyl group, each of X and Y which may be the same or different, is a cyano group, a carboxylic acid ester group having from 2 to 12 carbon atoms, an ethylsulfone group, a phenylsulfone group, a formyl group, an acetyl group, a benzoyl group, an amide group, a diethyl sulfonyl group, or a phenyl group; and(B) a room temperature self-curing adhesive containing from 0.05 to 50% by weight of an anion polymerization accelerator, said self-curing adhesive being selected from the group consisting of (1) a room temperature moisture-curing adhesive, (2) a room temperature curing two-part type epoxy resin adhesive, and (3) a room temperature curing synthetic resin aqueous emulsion adhesive, which comprises applying said two adhesives (A) and (B) at the bonding interface of the objects so that they do not contact each other and pressing the objects to each other to bring the two adhesives in contact with each other.