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公开(公告)号：US08963189B2
公开(公告)日：2015-02-24
申请号：US13052250
申请日：2011-03-21
CPC分类号： H01L33/62 , H01L27/153 , H01L33/0079 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface and a light emitting layer. An edge of a part of the first interconnect layer is exposed laterally from the first insulating layer and the second insulating layer.
摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和第二金属柱 绝缘层。 半导体层包括第一主表面，与第一主表面相对的第二主表面和发光层。 第一互连层的一部分的边缘从第一绝缘层和第二绝缘层横向暴露。
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公开(公告)号：US08399275B2
公开(公告)日：2013-03-19
申请号：US13153554
申请日：2011-06-06
申请人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
发明人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
IPC分类号： H01L21/00
CPC分类号： H01L33/508 , H01L25/0753 , H01L33/0079 , H01L33/486 , H01L33/502 , H01L33/58 , H01L2924/0002 , H01L2933/0041 , H01L2933/0066 , H01L2924/00
摘要： According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.
摘要翻译： 根据一个实施例，公开了一种制造半导体发光器件的方法。 该方法可以包括形成第一互连层，第二互连层，第一金属柱，第二金属柱，第二绝缘层，透明材料和磷光体层。 基于从第一主面侧获得的光的发射光谱，在从多个半导体层中选择的半导体层的第一主表面上形成透明材料。 透明材料透光。 荧光体层形成在透明材料和多个半导体层的第一主表面上。
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公开(公告)号：US20110300644A1
公开(公告)日：2011-12-08
申请号：US13153554
申请日：2011-06-06
申请人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
发明人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
IPC分类号： H01L21/66
CPC分类号： H01L33/508 , H01L25/0753 , H01L33/0079 , H01L33/486 , H01L33/502 , H01L33/58 , H01L2924/0002 , H01L2933/0041 , H01L2933/0066 , H01L2924/00
摘要： According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.
摘要翻译： 根据一个实施例，公开了一种制造半导体发光器件的方法。 该方法可以包括形成第一互连层，第二互连层，第一金属柱，第二金属柱，第二绝缘层，透明材料和磷光体层。 基于从第一主面侧获得的光的发射光谱，在从多个半导体层中选择的半导体层的第一主表面上形成透明材料。 透明材料透光。 荧光体层形成在透明材料和多个半导体层的第一主表面上。
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公开(公告)号：US08692279B2
公开(公告)日：2014-04-08
申请号：US13052248
申请日：2011-03-21
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/38 , H01L33/486 , H01L33/50 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface, and a light emitting layer. The first electrode is provided on a region including the light emitting layer on the second major surface. The second electrode is provided on the second major surface and interposed in the first electrode in a planar view.
摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和 第二绝缘层。 半导体层包括第一主表面，与第一主表面相对的第二主表面和发光层。 第一电极设置在包括第二主表面上的发光层的区域上。 第二电极设置在第二主表面上并且以平面视图插入第一电极中。
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公开(公告)号：US20110297998A1
公开(公告)日：2011-12-08
申请号：US13052250
申请日：2011-03-21
CPC分类号： H01L33/62 , H01L27/153 , H01L33/0079 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface and a light emitting layer. An edge of a part of the first interconnect layer is exposed laterally from the first insulating layer and the second insulating layer.
摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和第二金属柱 绝缘层。 半导体层包括第一主表面，与第一主表面相对的第二主表面和发光层。 第一互连层的一部分的边缘从第一绝缘层和第二绝缘层横向暴露。
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公开(公告)号：US20110297997A1
公开(公告)日：2011-12-08
申请号：US13052248
申请日：2011-03-21
IPC分类号： H01L33/38
CPC分类号： H01L33/44 , H01L33/38 , H01L33/486 , H01L33/50 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface, and a light emitting layer. The first electrode is provided on a region including the light emitting layer on the second major surface. The second electrode is provided on the second major surface and interposed in the first electrode in a planar view.
摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和 第二绝缘层。 半导体层包括第一主表面，与第一主表面相对的第二主表面和发光层。 第一电极设置在包括第二主表面上的发光层的区域上。 第二电极设置在第二主表面上并且以平面视图插入第一电极中。
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公开(公告)号：US09153746B2
公开(公告)日：2015-10-06
申请号：US13601568
申请日：2012-08-31
申请人： Akihiro Kojima , Yosuke Akimoto , Hideyuki Tomizawa , Hideko Mukaida , Miyoko Shimada , Yoshiaki Sugizaki , Hideto Furuyama
发明人： Akihiro Kojima , Yosuke Akimoto , Hideyuki Tomizawa , Hideko Mukaida , Miyoko Shimada , Yoshiaki Sugizaki , Hideto Furuyama
CPC分类号： H01L33/486 , H01L33/387 , H01L33/62
摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.
摘要翻译： 根据实施例，半导体发光器件包括具有发光层的半导体层。 该装置还包括设置在包括发光层的第一区域上的p侧电极; 设置在不包括发光层的第二区域层上的n侧电极; 以及具有与p侧电极连通的第一开口的第一绝缘膜和与n侧电极连通的第二开口。 p侧互连设置在第一绝缘膜上，并通过第一开口与p侧电极电连接。 n侧互连设置在第一绝缘膜上，并通过第二开口与n侧电极电连接。 p侧互连具有向n侧互连突出的多个突出部，并且n侧互连具有在p侧互连的突出部之间延伸的多个部分。
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公开(公告)号：US09099619B2
公开(公告)日：2015-08-04
申请号：US13419684
申请日：2012-03-14
申请人： Hiroshi Koizumi , Naoaki Sakurai , Yoshiaki Sugizaki , Yasuhide Okada , Tomomichi Naka , Masahiro Uekita , Akihiro Kojima , Yosuke Akimoto
发明人： Hiroshi Koizumi , Naoaki Sakurai , Yoshiaki Sugizaki , Yasuhide Okada , Tomomichi Naka , Masahiro Uekita , Akihiro Kojima , Yosuke Akimoto
CPC分类号： H01L33/508 , H01L33/0079 , H01L33/504 , H01L33/505 , H01L2933/0016 , H01L2933/0041
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting section and a wavelength conversion section. The light emitting section is configured to emit light. The wavelength conversion section is provided on one major surface side of the light emitting section. The wavelength conversion section contains a phosphor. The wavelength conversion section has a distribution of amount of the phosphor based on a distribution of wavelength of the light emitted from the light emitting section.
摘要翻译： 根据一个实施例，半导体发光器件包括发光部分和波长转换部分。 发光部被配置为发光。 波长转换部设置在发光部的一个主表面侧。 波长转换部分包含磷光体。 波长转换部分具有基于从发光部分发射的光的波长分布的荧光体的量的分布。
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公开(公告)号：US08614455B2
公开(公告)日：2013-12-24
申请号：US13424687
申请日：2012-03-20
申请人： Susumu Obata , Kazuhito Higuchi , Hideo Nishiuchi , Akiya Kimura , Toshiya Nakayama , Yoshiaki Sugizaki , Akihiro Kojima , Yosuke Akimoto
发明人： Susumu Obata , Kazuhito Higuchi , Hideo Nishiuchi , Akiya Kimura , Toshiya Nakayama , Yoshiaki Sugizaki , Akihiro Kojima , Yosuke Akimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/486 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.
摘要翻译： 根据实施例，半导体发光器件包括层叠体，第一和第二电极，第一和第二互连，第一和第二柱以及第一绝缘层。 层叠体包括第一和第二半导体层和发光层。 第一和第二电极分别连接到第一和第二半导体层。 第一和第二互连分别连接到第一和第二电极。 第一和第二支柱分别连接到第一和第二互连。 第一绝缘层设置在互连和支柱上。 第一和第二支柱具有暴露在第一绝缘层的表面中的第一和第二监视器焊盘。 第一和第二互连具有暴露在与第一绝缘层的表面连接的侧面中的第一和第二接合焊盘。
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公开(公告)号：US20110297965A1
公开(公告)日：2011-12-08
申请号：US12888757
申请日：2010-09-23
申请人： Yosuke Akimoto , Ryuichi Togawa , Hiroshi Ito , Akihiro Kojima , Miyuki Iduka , Yoshiaki Sugizaki
发明人： Yosuke Akimoto , Ryuichi Togawa , Hiroshi Ito , Akihiro Kojima , Miyuki Iduka , Yoshiaki Sugizaki
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L21/268 , H01L33/0079 , H01L33/40 , H01L33/50 , H01L2224/16
摘要： According to one embodiment, a light-emitting device includes a semiconductor layer, first and second electrode portions, a first insulating film, and a metal layer. The semiconductor layer includes a first main surface, a second main surface on an opposite side to the first main surface, a third main surface connecting the first and second main surfaces, and a light-emitting layer. The first and second electrode portions are provided on the second main surface of the semiconductor layer. The first insulating film covers the second main surface of the semiconductor layer and the third main surface of the semiconductor layer. The metal layer is stacked on at least the second electrode portion of the first and the second electrode portions, and the metal layer extends until reaching a part of the first insulating film. The part is continuously extended from the first insulating film covering the third main surface.
摘要翻译： 根据一个实施例，发光器件包括半导体层，第一和第二电极部分，第一绝缘膜和金属层。 半导体层包括第一主表面，与第一主表面相对的第二主表面，连接第一和第二主表面的第三主表面和发光层。 第一和第二电极部分设置在半导体层的第二主表面上。 第一绝缘膜覆盖半导体层的第二主表面和半导体层的第三主表面。 金属层至少堆叠在第一和第二电极部分的第二电极部分上，并且金属层延伸直到到达第一绝缘膜的一部分。 该部分从覆盖第三主表面的第一绝缘膜连续延伸。
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