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公开(公告)号:US08399275B2
公开(公告)日:2013-03-19
申请号:US13153554
申请日:2011-06-06
申请人: Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
发明人: Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
IPC分类号: H01L21/00
CPC分类号: H01L33/508 , H01L25/0753 , H01L33/0079 , H01L33/486 , H01L33/502 , H01L33/58 , H01L2924/0002 , H01L2933/0041 , H01L2933/0066 , H01L2924/00
摘要: According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.
摘要翻译: 根据一个实施例,公开了一种制造半导体发光器件的方法。 该方法可以包括形成第一互连层,第二互连层,第一金属柱,第二金属柱,第二绝缘层,透明材料和磷光体层。 基于从第一主面侧获得的光的发射光谱,在从多个半导体层中选择的半导体层的第一主表面上形成透明材料。 透明材料透光。 荧光体层形成在透明材料和多个半导体层的第一主表面上。
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公开(公告)号:US20110300644A1
公开(公告)日:2011-12-08
申请号:US13153554
申请日:2011-06-06
申请人: Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
发明人: Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
IPC分类号: H01L21/66
CPC分类号: H01L33/508 , H01L25/0753 , H01L33/0079 , H01L33/486 , H01L33/502 , H01L33/58 , H01L2924/0002 , H01L2933/0041 , H01L2933/0066 , H01L2924/00
摘要: According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.
摘要翻译: 根据一个实施例,公开了一种制造半导体发光器件的方法。 该方法可以包括形成第一互连层,第二互连层,第一金属柱,第二金属柱,第二绝缘层,透明材料和磷光体层。 基于从第一主面侧获得的光的发射光谱,在从多个半导体层中选择的半导体层的第一主表面上形成透明材料。 透明材料透光。 荧光体层形成在透明材料和多个半导体层的第一主表面上。
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3.
公开(公告)号:US09099619B2
公开(公告)日:2015-08-04
申请号:US13419684
申请日:2012-03-14
申请人: Hiroshi Koizumi , Naoaki Sakurai , Yoshiaki Sugizaki , Yasuhide Okada , Tomomichi Naka , Masahiro Uekita , Akihiro Kojima , Yosuke Akimoto
发明人: Hiroshi Koizumi , Naoaki Sakurai , Yoshiaki Sugizaki , Yasuhide Okada , Tomomichi Naka , Masahiro Uekita , Akihiro Kojima , Yosuke Akimoto
CPC分类号: H01L33/508 , H01L33/0079 , H01L33/504 , H01L33/505 , H01L2933/0016 , H01L2933/0041
摘要: According to one embodiment, a semiconductor light emitting device includes a light emitting section and a wavelength conversion section. The light emitting section is configured to emit light. The wavelength conversion section is provided on one major surface side of the light emitting section. The wavelength conversion section contains a phosphor. The wavelength conversion section has a distribution of amount of the phosphor based on a distribution of wavelength of the light emitted from the light emitting section.
摘要翻译: 根据一个实施例,半导体发光器件包括发光部分和波长转换部分。 发光部被配置为发光。 波长转换部设置在发光部的一个主表面侧。 波长转换部分包含磷光体。 波长转换部分具有基于从发光部分发射的光的波长分布的荧光体的量的分布。
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4.
公开(公告)号:US20120235184A1
公开(公告)日:2012-09-20
申请号:US13419684
申请日:2012-03-14
申请人: Hiroshi KOIZUMI , Naoaki Sakurai , Yoshiaki Sugizaki , Yasuhide Okada , Tomomichi Naka , Masahiro Uekita , Akihiro Kojima , Yosuke Akimoto
发明人: Hiroshi KOIZUMI , Naoaki Sakurai , Yoshiaki Sugizaki , Yasuhide Okada , Tomomichi Naka , Masahiro Uekita , Akihiro Kojima , Yosuke Akimoto
CPC分类号: H01L33/508 , H01L33/0079 , H01L33/504 , H01L33/505 , H01L2933/0016 , H01L2933/0041
摘要: According to one embodiment, a semiconductor light emitting device includes a light emitting section and a wavelength conversion section. The light emitting section is configured to emit light. The wavelength conversion section is provided on one major surface side of the light emitting section. The wavelength conversion section contains a phosphor. The wavelength conversion section has a distribution of amount of the phosphor based on a distribution of wavelength of the light emitted from the light emitting section.
摘要翻译: 根据一个实施例,半导体发光器件包括发光部分和波长转换部分。 发光部被配置为发光。 波长转换部设置在发光部的一个主表面侧。 波长转换部分包含磷光体。 波长转换部分具有基于从发光部分发射的光的波长分布的荧光体的量的分布。
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公开(公告)号:US08754429B2
公开(公告)日:2014-06-17
申请号:US13154999
申请日:2011-06-07
申请人: Hiroshi Koizumi , Yasuhide Okada , Susumu Obata , Tomomichi Naka , Kazuhito Higuchi , Kazuo Shimokawa , Yoshiaki Sugizaki , Akihiro Kojima
发明人: Hiroshi Koizumi , Yasuhide Okada , Susumu Obata , Tomomichi Naka , Kazuhito Higuchi , Kazuo Shimokawa , Yoshiaki Sugizaki , Akihiro Kojima
CPC分类号: H01L33/44 , H01L33/0079 , H01L33/0095 , H01L33/50 , H01L33/58 , H01L33/62 , H01L2224/16 , H01L2933/0058
摘要: According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.
摘要翻译: 根据一个实施例,光学半导体器件包括发光层,透明层,第一金属柱,第二金属柱和密封层。 发光层包括第一和第二主表面,第一和第二电极。 第二主表面是与第一主表面相对的表面,并且第一电极和第二电极形成在第二主表面上。 透明层设置在第一主表面上。 第一金属柱设置在第一电极上。 第二金属柱设置在第二电极上。 密封层设置在第二主表面上。 密封层覆盖发光层的侧表面,并且密封第一和第二金属柱,同时使第一和第二金属柱的端部露出。
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公开(公告)号:US08368089B2
公开(公告)日:2013-02-05
申请号:US12885777
申请日:2010-09-20
CPC分类号: H01L33/50 , H01L33/46 , H01L33/486 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.
摘要翻译: 根据一个实施例,半导体发光器件包括半导体层,第一电极,第二电极,透明层和荧光材料层。 透明层设置在半导体层的第一主表面上。 透明层相对于由发光层发射的光是透明的,并且具有设置在发光层的外周外的沟槽。 荧光材料层设置在沟槽和透明层上。 荧光材料层包括设置在沟槽中的第一荧光材料颗粒和设置在透明层上的第二荧光材料颗粒。 第一荧光体粒子的粒径小于沟槽的宽度。 第二荧光体粒子的粒径大于沟槽的宽度,大于第一荧光体粒子的粒径。
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公开(公告)号:US20110297969A1
公开(公告)日:2011-12-08
申请号:US12885777
申请日:2010-09-20
CPC分类号: H01L33/50 , H01L33/46 , H01L33/486 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.
摘要翻译: 根据一个实施例,半导体发光器件包括半导体层,第一电极,第二电极,透明层和荧光材料层。 透明层设置在半导体层的第一主表面上。 透明层相对于由发光层发射的光是透明的,并且具有设置在发光层的外周外的沟槽。 荧光材料层设置在沟槽和透明层上。 荧光材料层包括设置在沟槽中的第一荧光材料颗粒和设置在透明层上的第二荧光材料颗粒。 第一荧光体粒子的粒径小于沟槽的宽度。 第二荧光体粒子的粒径大于沟槽的宽度,大于第一荧光体粒子的粒径。
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公开(公告)号:US20110297987A1
公开(公告)日:2011-12-08
申请号:US13154999
申请日:2011-06-07
申请人: Hiroshi KOIZUMI , Yasuhide Okada , Susumu Obata , Tomomichi Naka , Kazuhito Higuchi , Kazuo Shimokawa
发明人: Hiroshi KOIZUMI , Yasuhide Okada , Susumu Obata , Tomomichi Naka , Kazuhito Higuchi , Kazuo Shimokawa
IPC分类号: H01L33/50
CPC分类号: H01L33/44 , H01L33/0079 , H01L33/0095 , H01L33/50 , H01L33/58 , H01L33/62 , H01L2224/16 , H01L2933/0058
摘要: According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.
摘要翻译: 根据一个实施例,光学半导体器件包括发光层,透明层,第一金属柱,第二金属柱和密封层。 发光层包括第一和第二主表面,第一和第二电极。 第二主表面是与第一主表面相对的表面,并且第一电极和第二电极形成在第二主表面上。 透明层设置在第一主表面上。 第一金属柱设置在第一电极上。 第二金属柱设置在第二电极上。 密封层设置在第二主表面上。 密封层覆盖发光层的侧表面,并且密封第一和第二金属柱,同时使第一和第二金属柱的端部露出。
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公开(公告)号:US09303976B2
公开(公告)日:2016-04-05
申请号:US13456458
申请日:2012-04-26
CPC分类号: G01B11/06 , G01N21/64 , G01N21/66 , G01N2021/6421 , H01L2933/0041
摘要: According to one embodiment, a substrate processing system includes a measuring unit, a data processing unit, and a processing unit. The measuring unit is configured to measure information relating to a thickness dimension of a substrate. The substrate includes a light emitting unit and a wavelength conversion unit. The wavelength conversion unit includes a phosphor. The data processing unit is configured to determine processing information relating to a thickness direction of the wavelength conversion unit based on the measured information relating to the thickness dimension of the substrate and based on information relating to a characteristic of light emitted from the light emitting unit. The processing unit is configured to perform processing of the wavelength conversion unit based on the determined processing information.
摘要翻译: 根据一个实施例,基板处理系统包括测量单元,数据处理单元和处理单元。 测量单元被配置为测量与衬底的厚度尺寸有关的信息。 基板包括发光单元和波长转换单元。 波长转换单元包括荧光体。 数据处理单元被配置为基于与基板的厚度尺寸相关的测量信息,并且基于与从发光单元发射的光的特性相关的信息来确定与波长转换单元的厚度方向有关的处理信息。 处理单元被配置为基于所确定的处理信息来执行波长转换单元的处理。
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公开(公告)号:US20120277896A1
公开(公告)日:2012-11-01
申请号:US13456458
申请日:2012-04-26
CPC分类号: G01B11/06 , G01N21/64 , G01N21/66 , G01N2021/6421 , H01L2933/0041
摘要: According to one embodiment, a substrate processing system includes a measuring unit, a data processing unit, and a processing unit. The measuring unit is configured to measure information relating to a thickness dimension of a substrate. The substrate includes a light emitting unit and a wavelength conversion unit. The wavelength conversion unit includes a phosphor. The data processing unit is configured to determine processing information relating to a thickness direction of the wavelength conversion unit based on the measured information relating to the thickness dimension of the substrate and based on information relating to a characteristic of light emitted from the light emitting unit. The processing unit is configured to perform processing of the wavelength conversion unit based on the determined processing information.
摘要翻译: 根据一个实施例,基板处理系统包括测量单元,数据处理单元和处理单元。 测量单元被配置为测量与衬底的厚度尺寸有关的信息。 基板包括发光单元和波长转换单元。 波长转换单元包括荧光体。 数据处理单元被配置为基于与基板的厚度尺寸相关的测量信息,并且基于与从发光单元发射的光的特性相关的信息来确定与波长转换单元的厚度方向有关的处理信息。 处理单元被配置为基于所确定的处理信息来执行波长转换单元的处理。
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