公开(公告)号：US20090156000A1

公开(公告)日：2009-06-18

申请号：US12332802

申请日：2008-12-11

申请人： Yukiteru MATSUI ,  Atsushi Shigeta ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru MATSUI ,  Atsushi Shigeta ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/283

CPC分类号： H01L21/02118 ,  C09G1/02 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76835

摘要： A method for manufacturing a semiconductor device is provided, which includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a first slurry containing first resin particles and a water-soluble polymer to planarize a surface of the organic film precursor, and polishing the organic film precursor where the surface is planarized using a second slurry containing second resin particles and a water-soluble polymer to leave the organic film precursor in the recess, thereby exposing the insulating film, an average particle diameter of the second resin particles being smaller than that of the first resin particles.

摘要翻译： 提供了一种制造半导体器件的方法，其包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂膜，在第一温度下烘烤该涂膜 不能实现有机成分的交联以获得有机膜前体，使用含有第一树脂粒子和水溶性聚合物的第一浆料对有机膜前体进行研磨，使有机膜前体的表面平坦化， 膜前体，其中使用含有第二树脂颗粒和水溶性聚合物的第二浆料将表面平坦化，以使凹陷中的有机膜前体离开，从而暴露绝缘膜，第二树脂颗粒的平均粒径小于 的第一树脂颗粒。

公开(公告)号：US20070128874A1

公开(公告)日：2007-06-07

申请号：US11563414

申请日：2006-11-27

申请人： Hirotaka SHIDA ,  Yukiteru MATSUI ,  Atsushi SHIGETA ,  Shinichi HIRASAWA ,  Hirokazu KATO ,  Masako KINOSHITA ,  Takeshi NISHIOKA ,  Hiroyuki YANO

发明人： Hirotaka SHIDA ,  Yukiteru MATSUI ,  Atsushi SHIGETA ,  Shinichi HIRASAWA ,  Hirokazu KATO ,  Masako KINOSHITA ,  Takeshi NISHIOKA ,  Hiroyuki YANO

IPC分类号： H01L21/4763 ,  H01L21/461

CPC分类号： H01L21/7681 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/76835

摘要： A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.

摘要翻译： 化学机械抛光方法包括使用包含具有表面官能团的聚合物颗粒和水溶性聚合物的浆料来抛光有机膜。

公开(公告)号：US20080227297A1

公开(公告)日：2008-09-18

申请号：US12038877

申请日：2008-02-28

申请人： Yukiteru MATSUI ,  Gaku Minamihaba ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru MATSUI ,  Gaku Minamihaba ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/304 ,  B24B29/02

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/31058

摘要： A chemically mechanically polishing method is provided, which includes slide-contacting a polishing film with a polishing pad while feeding a first chemical liquid and a second chemical liquid to the polishing pad. The first chemical liquid contains an electrolyte and bubbles having a diameter ranging from 10 nm to 1000 μm, and the second chemical liquid contains abrasive particles.

摘要翻译： 提供了一种化学机械抛光方法，其包括将抛光膜与抛光垫滑动接触，同时向抛光垫供给第一化学液体和第二化学液体。 第一化学液体含有直径为10nm〜1000μm的电解质和气泡，第二化学液含有磨粒。

公开(公告)号：US20100144062A1

公开(公告)日：2010-06-10

申请号：US12549261

申请日：2009-08-27

申请人： Yukiteru MATSUI ,  Takeo Kubota ,  Yoshikuni Tateyama ,  Hiroyuki Kanaya ,  Yoshihiro Minami

发明人： Yukiteru MATSUI ,  Takeo Kubota ,  Yoshikuni Tateyama ,  Hiroyuki Kanaya ,  Yoshihiro Minami

IPC分类号： H01L21/8246

CPC分类号： H01L27/11507 ,  H01L21/0206 ,  H01L21/31053 ,  H01L21/32139 ,  H01L28/55

摘要： A first electrode film, a ferroelectric film, and a second electrode film are accumulated above a semiconductor in this order, a hard mask is accumulated above the second electrode, scrub cleaning is performed on the surface of the hard mask with an surfactant, the hard mask on which the scrub cleaning is performed has been patterned according to a planar shape of a ferroelectric capacitor, and etching is performed by using as a hard mask the hard mask that has been patterned.

摘要翻译： 第一电极膜，铁电体膜和第二电极膜依次堆积在半导体上方，硬掩模在第二电极上方积聚，用表面活性剂对硬掩模的表面进行擦洗清洗 根据铁电电容器的平面形状，对其进行擦洗清洁的掩模进行了图案化，并且通过使用已经被图案化的硬掩模作为硬掩模来进行蚀刻。

公开(公告)号：US20090258493A1

公开(公告)日：2009-10-15

申请号：US12403979

申请日：2009-03-13

申请人： Yukiteru MATSUI ,  Hajime EDA ,  Takatoshi ONO ,  Satoko Seta ,  Yoshikuni TATEYAMA

发明人： Yukiteru MATSUI ,  Hajime EDA ,  Takatoshi ONO ,  Satoko Seta ,  Yoshikuni TATEYAMA

IPC分类号： H01L21/306

CPC分类号： H01L21/31053 ,  B24B37/044 ,  C09G1/02

摘要： A substance to be polished made of a silicon oxide film formed on a semiconductor substrate is chemically and mechanically polished and planarized by bringing the substance to be polished into contact with a polishing pad having a modulus of elasticity within a range of 400 to 600 megapascals and by relatively sliding the substance to be polished and the polishing pad, in a condition that a polishing pressure is within a range of 50 to 200 hectopascals and that a rotation number of the polishing pad is within a range of 10 to 80 rpm, and in a state that a polishing slurry containing cerium oxide particles and an anionic surfactant is supplied to the polishing pad.

摘要翻译： 通过使待研磨物质与400〜600兆帕的范围内的弹性模量的抛光垫接触，对在半导体基板上形成的氧化硅膜进行抛光的物质进行化学机械研磨和平坦化， 通过在抛光压力在50至200百帕斯卡范围内并且抛光垫的转数在10至80rpm的范围内，并且在 将含有氧化铈粒子和阴离子表面活性剂的研磨浆料供给到研磨垫的状态。

公开(公告)号：US20130119013A1

公开(公告)日：2013-05-16

申请号：US13423018

申请日：2012-03-16

申请人： Yukiteru MATSUI ,  Masako KODERA ,  Hiroshi TOMITA ,  Gaku MINAMIHABA ,  Akifumi GAWASE

发明人： Yukiteru MATSUI ,  Masako KODERA ,  Hiroshi TOMITA ,  Gaku MINAMIHABA ,  Akifumi GAWASE

IPC分类号： B44C1/22 ,  B05C9/06

CPC分类号： H01L21/30625 ,  B24B37/044 ,  B24B37/24 ,  H01L21/67075 ,  H01L21/67219

摘要： According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions.

摘要翻译： 根据一个实施例，公开了用于化学平面化的方法。 该方法可以包括在具有不规则性的待处理膜上形成表面层。 表面层沿着不规则结合或吸附到待处理的膜上以抑制被处理膜的溶解。 该方法可以包括在待处理膜的处理溶液中平面化待处理膜，通过旋转待处理膜和加工体，同时待处理膜与处理体接触 通过表面层除去凹凸部的凸部的表面层，同时将表面层留在凹凸部的凹部上，使凸部的溶解度大于凹部的溶解度。

公开(公告)号：US20130115855A1

公开(公告)日：2013-05-09

申请号：US13415143

申请日：2012-03-08

申请人： Masako KODERA ,  Yukiteru MATSUI

发明人： Masako KODERA ,  Yukiteru MATSUI

IPC分类号： B24B37/015 ,  B24B1/00 ,  B24B51/00

CPC分类号： B24B37/015 ,  B24B37/044 ,  B24B55/02

摘要： According to one embodiment, a polishing method comprises pressing a substrate being rotated against a polishing pad being rotated and supplying slurry on the polishing pad, measuring a surface temperature of the polishing pad, and when the surface temperature is not less than a predetermined temperature, jetting jet stream containing supercooled droplets from a nozzle having a narrow portion toward the polishing pad.

摘要翻译： 根据一个实施例，抛光方法包括将正在旋转的衬底旋转的衬底压在抛光垫上并将浆料供应到抛光垫上，测量抛光垫的表面温度，并且当表面温度不低于预定温度时， 从具有窄部分的喷嘴朝向抛光垫的喷射流包含过冷液滴。

公开(公告)号：US20130045596A1

公开(公告)日：2013-02-21

申请号：US13428494

申请日：2012-03-23

申请人： Hajime EDA ,  Yukiteru MATSUI

发明人： Hajime EDA ,  Yukiteru MATSUI

IPC分类号： H01L21/306 ,  B24B29/00 ,  B24B51/00

CPC分类号： H01L21/3212 ,  B24B37/042 ,  B24B37/107 ,  B24B37/245 ,  H01L21/31053 ,  H01L21/76224

摘要： According to one embodiment, a semiconductor device manufacturing method is provided. In the semiconductor device manufacturing method, a process target film is formed on a semiconductor substrate, and the surface of the process target film is polished by a CMP method. The CMP method comprises heating a rotating polishing pad from a first temperature to a second temperature higher than the first temperature, and bringing the surface of the process target film into contact with the polishing pad heated to the second temperature.

摘要翻译： 根据一个实施例，提供一种半导体器件制造方法。 在半导体器件制造方法中，在半导体衬底上形成工艺靶膜，并且通过CMP方法对工艺靶膜的表面进行抛光。 CMP方法包括将旋转抛光垫从第一温度加热到高于第一温度的第二温度，并使加工目标薄膜的表面与加热到第二温度的抛光垫接触。

公开(公告)号：US20110070745A1

公开(公告)日：2011-03-24

申请号：US12775423

申请日：2010-05-06

申请人： Yukiteru MATSUI ,  Satoko Seta ,  Takatoshi Ono ,  Hajime Eda

发明人： Yukiteru MATSUI ,  Satoko Seta ,  Takatoshi Ono ,  Hajime Eda

IPC分类号： H01L21/3105 ,  B24B1/00 ,  B24B41/06

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463

摘要： A polishing method includes performing conditioning process of injecting a conditioning agent onto a surface of a non-foam polishing pad arranged on a polishing table at a predetermined pressure, and polishing a surface of a polishing target while supplying a polishing slurry containing oxide particles and a surfactant onto the polishing pad, wherein an average of a residual cerium amount is equal to or smaller than 0.35 at % when a plurality of measurement regions, each 200 μm□ in area including the surface of the polishing pad, in a cross section of the polishing pad are measured after the conditioning process.

摘要翻译： 抛光方法包括进行将调理剂注入到以预定压力布置在抛光台上的非泡沫抛光垫的表面上的调节过程，并且在提供包含氧化物颗粒的抛光浆料的同时抛光抛光对象的表面， 表面活性剂在抛光垫上，其中当在包括抛光垫的表面的区域中的每个200μm□的多个测量区域中，残余铈量的平均值等于或小于0.35at％ 抛光垫在调理过程后进行测量。