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    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20160202473A1

    公开(公告)日：2016-07-14

    申请号：US15077105

    申请日：2016-03-22

    Applicant: SUMITOMO PRECISION PRODUCTS CO., LTD.

    Inventor： Ryohei UCHINO ,  Gen MATSUOKA

    IPC: G02B26/08 ,  B81B3/00

    CPC classification number: B81C1/00492 ,  B81B3/0086 ,  B81B2201/042 ,  B81B2203/0136 ,  B81C1/00404 ,  B81C1/00603 ,  B81C2201/0102 ,  B81C2201/0132 ,  B81C2201/0198 ,  G02B26/0841

    Abstract: A mirror device includes a frame body, a mirror configured to tilt about a Y-axis with respect to the frame body, a fixed inner comb electrode including a plurality of electrode fingers arranged in the arrangement direction along the Y-axis and provided at the frame body, and a movable inner comb electrode including a plurality of electrode fingers arranged in the arrangement direction and provided at the mirror, the electrodes fingers of the fixed inner comb electrode and the movable inner comb electrode being alternately arranged. The mirror includes a mirror body and an extension extending from the mirror body. Some of the electrode fingers of the movable inner comb electrode are provided at the mirror body, and another electrode fingers of the movable inner comb electrode are provided at the extension.

    Abstract translation: 反射镜装置包括框架体，配置成相对于框架体围绕Y轴倾斜的反射镜，固定的内梳状电极，包括沿着Y轴布置在排列方向上的多个电极指， 框体和可动内梳状电极，其包括沿着排列方向布置并设置在反射镜处的多个电极指，固定内梳电极和可移动​​内梳电极的电极指交替布置。 镜子包括镜体和从镜体延伸的延伸部分。 可动内梳电极的一些电极指设置在镜体上，可移动内梳电极的另一电极指在延伸部处设置。

    Plasma assisted method of accurate alignment and pre-bonding for microstructure including glass or quartz chip
    5.
    发明授权
    Plasma assisted method of accurate alignment and pre-bonding for microstructure including glass or quartz chip 有权

    公开(公告)号：US09842749B2

    公开(公告)日：2017-12-12

    申请号：US15324670

    申请日：2015-11-17

    Applicant: Beijing University of Technology

    Inventor： Guangsheng Guo ,  Siyu Wang ,  Qiaosheng Pu ,  Xiayan Wang

    IPC: H01L21/26 ,  H01L21/67 ,  B81C3/00 ,  B81C1/00

    CPC classification number: H01L21/67028 ,  B81C1/00928 ,  B81C3/001 ,  B81C3/002 ,  B81C2201/0102 ,  B81C2201/0128 ,  B81C2201/0133 ,  B81C2201/019 ,  B81C2203/051 ,  H01L21/68

    Abstract: The plasma-assisted method of precise alignment and pre-bonding for microstructure of glass and quartz microchip belongs to micromachining and bonding technologies of the microchip. The steps of which are as follows: photoresist and chromium layers on glass or quartz microchip are completely removed followed by sufficient cleaning of the surface with nonionic surfactant and quantities of ultra-pure water. Then the surface treatment is proceeded for an equipping surface with high hydrophily with the usage of plasma cleaning device. Under the drying condition, the precise alignment is accomplished through moving substrate and cover plate after being washed with the help of microscope observation. Further on, to achieve precise alignment and pre-bonding of the microstructure of glass and quartz microchip, a minute quantity of ultrapure water is instilled into a limbic crevice for adhesion, and entire water is completely wiped out by vacuum drying following sufficient squeezing. Based on the steps above, it is available to achieve permanent bonding by further adopting thermal bonding method. In summary, it takes within 30 min to finish the whole operation of precise alignment and pre-bonding by this method. Besides, this method is of great promise because of its speediness, efficiency, easy maneuverability, operational safety and wide applications.

    Plasma assisted method of accurate alignment and pre-bonding for microstructure including glass or quartz chip
    6.
    发明申请
    Plasma assisted method of accurate alignment and pre-bonding for microstructure including glass or quartz chip 有权

    公开(公告)号：US20170301564A1

    公开(公告)日：2017-10-19

    申请号：US15324670

    申请日：2015-11-17

    Applicant: Beijing University of Technology

    Inventor： Guangsheng Guo ,  Siyu Wang ,  Qiaosheng Pu ,  Xiayan Wang

    IPC: H01L21/67 ,  B81C3/00 ,  B81C1/00

    CPC classification number: H01L21/67028 ,  B81C1/00928 ,  B81C3/001 ,  B81C3/002 ,  B81C2201/0102 ,  B81C2201/0128 ,  B81C2201/0133 ,  B81C2201/019 ,  B81C2203/051 ,  H01L21/68

    Abstract: The plasma-assisted method of precise alignment and pre-bonding for microstructure of glass and quartz microchip belongs to micromachining and bonding technologies of the microchip. The steps of which are as follows: photoresist and chromium layers on glass or quartz microchip are completely removed followed by sufficient cleaning of the surface with nonionic surfactant and quantities of ultra-pure water. Then the surface treatment is proceeded for an equipping surface with high hydrophily with the usage of plasma cleaning device. Under the drying condition, the precise alignment is accomplished through moving substrate and cover plate after being washed with the help of microscope observation. Further on, to achieve precise alignment and pre-bonding of the microstructure of glass and quartz microchip, a minute quantity of ultrapure water is instilled into a limbic crevice for adhesion, and entire water is completely wiped out by vacuum drying following sufficient squeezing. Based on the steps above, it is available to achieve permanent bonding by further adopting thermal bonding method. In summary, it takes within 30 min to finish the whole operation of precise alignment and pre-bonding by this method. Besides, this method is of great promise because of its speediness, efficiency, easy maneuverability, operational safety and wide applications.

    METHOD FOR MANUFACTURING ELECTRONIC COMPONENT
    9.
    发明申请
    METHOD FOR MANUFACTURING ELECTRONIC COMPONENT 有权
    制造电子元件的方法

    公开(公告)号：US20160200569A1

    公开(公告)日：2016-07-14

    申请号：US15077188

    申请日：2016-03-22

    Applicant: SUMITOMO PRECISION PRODUCTS CO., LTD.

    Inventor： Yasuyuki HIRATA ,  Gen MATSUOKA

    IPC: B81C1/00

    CPC classification number: B81C1/00492 ,  B81B3/0086 ,  B81B2201/042 ,  B81B2203/0136 ,  B81C1/00404 ,  B81C1/00603 ,  B81C2201/0102 ,  B81C2201/0132 ,  B81C2201/0198 ,  G02B26/0841

    Abstract: At the first etching step of etching an SOI substrate from a first silicon layer side, a portion of a first structure formed of the first silicon layer is formed as a pre-structure having a larger shape than a final shape. At the mask formation step of forming a final mask on a second silicon layer side of the SOI substrate, a first mask corresponding to the final shape of the first structure is formed in the pre-structure. At the second etching step of etching the SOI substrate from the second silicon layer side, the second silicon layer and the pre-structure are, using the first mask, etched to form the final shape of the first structure.

    Abstract translation: 在从第一硅层侧蚀刻SOI衬底的第一蚀刻步骤中，由第一硅层形成的第一结构的一部分形成为具有比最终形状更大的形状的预结构。 在SOI衬底的第二硅层侧形成最终掩模的掩模形成步骤中，在预结构中形成对应于第一结构的最终形状的第一掩模。 在从第二硅层侧蚀刻SOI衬底的第二蚀刻步骤中，使用第一掩模蚀刻第二硅层和预制结构以形成第一结构的最终形状。

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