中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

9 records (took 0.009 seconds)

    Thermal radiation measuring system with a radiation measuring device and a shielded reference device
    1.
    发明授权
    Thermal radiation measuring system with a radiation measuring device and a shielded reference device 失效
    具有辐射测量装置和屏蔽参考装置的热辐射测量系统

    公开(公告)号：US4687342A

    公开(公告)日：1987-08-18

    申请号：US692843

    申请日：1985-01-18

    Applicant: Peter Betzler ,  Karl-Friedrich Mast

    Inventor： Peter Betzler ,  Karl-Friedrich Mast

    IPC: G01J5/02 ,  G01J5/20 ,  G01T1/02 ,  G01T3/04 ,  G01K17/00

    CPC classification number: G01J5/20 ,  G01J2005/202 ,  G01J2005/206

    Abstract: A bolometer which is adapted for a wide-band of radiation including soft adiation, and in which the sensitivity of the time constant (the heat flow from the absorber layer to the dissipator layer) can be exactly preselected without regard to the wave length of the radiation. The bolometer includes an electrically insulating carrier foil which has mounted thereon an absorber layer on one side thereof and a resistance layer on the opposite side of the foil, the resistance layer being part of a resistance measuring bridge. A thermally conductive layer is placed between the absorber layer and the carrier foil. The thermally conductive layer has portions protruding beyond the absorber layer. A heat dissipator is in thermally conductive contact with the protruding portions of the thermally conductive layer to dissipate the heat of the absorber layer. The laterally protruding portions of the thermally conductive layer in contact with the heat dissipator are shielded against the radiation to be measured.

    Abstract translation: 适用于包括软X射线的宽带辐射的测辐射热谱仪，其中时间常数（来自吸收层到散热层的热流）的灵敏度可以被精确地预先选择，而不考虑波长 的辐射。 测辐射热计包括电绝缘载体箔，其一侧上安装有吸收层，在箔的相对侧上安装有电阻层，电阻层是电阻测量桥的一部分。 在吸收层和载体箔之间放置导热层。 导热层具有突出超过吸收层的部分。 散热器与导热层的突出部分导热接触以消散吸收层的热量。 与散热器接触的导热层的横向突出部分被屏蔽在待测量的辐射上。

    INFRARED SENSOR
    2.
    发明申请
    INFRARED SENSOR 有权
    红外传感器

    公开(公告)号：US20140374596A1

    公开(公告)日：2014-12-25

    申请号：US14375065

    申请日：2013-01-29

    Applicant: MITSUBISHI MATERIALS CORPORATION

    Inventor： Kazuyoshi Tari ,  Mototaka Ishikawa ,  Keiji Shirata ,  Kenzo Nakamura

    IPC: G01J5/10 ,  G01J5/08

    CPC classification number: G01J5/10 ,  G01J5/0022 ,  G01J5/06 ,  G01J5/0803 ,  G01J2005/103 ,  G01J2005/206 ,  G03G15/2039 ,  G03G2215/00772 ,  H01L27/144 ,  H01L37/02 ,  H05K1/0271 ,  H05K1/189 ,  H05K2201/068 ,  H05K2201/09136 ,  H05K2201/09781

    Abstract: Provided is an infrared sensor which is capable of measuring a temperature of an object to be measured with high accuracy even when lead wires are connected to one side thereof. The infrared sensor includes an insulating film; a first and a second heat sensitive element which are provided on one face of the insulating film; a first and a second wiring film that are respectively connected to the first and the second heat sensitive element; an infrared reflecting film; a plurality of terminal electrodes; and a thermal resistance adjusting film which is provided on the other face of the insulating film, is in opposition to at least a portion of the longer one of the first or the second wiring film in wiring distance from the terminal electrodes, and is formed of a material with greater heat dissipation than the insulating film.

    Abstract translation: 提供一种能够即使在将引线连接到其一侧时也能够以高精度测量被测量物体的温度的红外线传感器。 红外线传感器包括绝缘膜; 第一和第二热敏元件，设置在绝缘膜的一个面上; 分别连接到第一和第二热敏元件的第一和第二布线膜; 红外反射膜; 多个端子电极; 并且设置在所述绝缘膜的另一面上的热电阻调节膜与所述端子电极的布线距离处于与所述第一或第二布线膜中较长的一个的至少一部分相对，并且由所述热电阻调节膜形成为 具有比绝缘膜更大散热的材料。

    Thermal detector
    3.
    发明授权
    Thermal detector 失效
    热检测器

    公开(公告)号：US4847500A

    公开(公告)日：1989-07-11

    申请号：US925833

    申请日：1986-09-12

    Applicant: David J. Pedder ,  Paul Watson ,  Richard A. C. Bache

    Inventor： David J. Pedder ,  Paul Watson ,  Richard A. C. Bache

    IPC: G01J5/10 ,  G01J5/20

    CPC classification number: G01J5/10 ,  G01J5/20 ,  G01J2005/202 ,  G01J2005/206

    Abstract: A thermal detector of the type comprising an array of discrete detector elements each of which is supported by a common supportive layer, each of which is provided in thermal contact with a corresponding collector of radiation absorbent material, the area of each collector being larger than the area of the corresponding detector element, characterized in that contact between each collector and the supportive layer is restricted to an area lying substantially within and displaced from the edge periphery of said collector.

    Abstract translation: 一种热检测器，其类型包括离散检测器元件阵列，每个检测器元件由公共支撑层支撑，每个支撑层设置成与相应的辐射吸收材料的收集器热接触，每个收集器的面积大于 相应的检测器元件的区域，其特征在于，每个收集器和支撑层之间的接触被限制在基本上位于并且从所述收集器的边缘周边移位的区域。

    Infrared sensor
    6.
    发明授权
    Infrared sensor 有权
    红外传感器

    公开(公告)号：US09568371B2

    公开(公告)日：2017-02-14

    申请号：US14375065

    申请日：2013-01-29

    Applicant: MITSUBISHI MATERIALS CORPORATION

    Inventor： Kazuyoshi Tari ,  Mototaka Ishikawa ,  Keiji Shirata ,  Kenzo Nakamura

    IPC: G01J5/00 ,  G01J5/10 ,  G01J5/08 ,  G01J5/06 ,  H05K1/02 ,  H01L37/02 ,  G01J5/20 ,  H01L27/144 ,  G03G15/20 ,  H05K1/18

    CPC classification number: G01J5/10 ,  G01J5/0022 ,  G01J5/06 ,  G01J5/0803 ,  G01J2005/103 ,  G01J2005/206 ,  G03G15/2039 ,  G03G2215/00772 ,  H01L27/144 ,  H01L37/02 ,  H05K1/0271 ,  H05K1/189 ,  H05K2201/068 ,  H05K2201/09136 ,  H05K2201/09781

    Abstract: Provided is an infrared sensor which is capable of measuring a temperature of an object to be measured with high accuracy even when lead wires are connected to one side thereof. The infrared sensor includes an insulating film; a first and a second heat sensitive element which are provided on one face of the insulating film; a first and a second wiring film that are respectively connected to the first and the second heat sensitive element; an infrared reflecting film; a plurality of terminal electrodes; and a thermal resistance adjusting film which is provided on the other face of the insulating film, is in opposition to at least a portion of the longer one of the first or the second wiring film in wiring distance from the terminal electrodes, and is formed of a material with greater heat dissipation than the insulating film.

    Abstract translation: 提供一种能够即使在将引线连接到其一侧时也能够以高精度测量被测量物体的温度的红外线传感器。 红外线传感器包括绝缘膜; 第一和第二热敏元件，设置在绝缘膜的一个面上; 分别连接到第一和第二热敏元件的第一和第二布线膜; 红外反射膜; 多个端子电极; 并且设置在所述绝缘膜的另一面上的热电阻调节膜与所述端子电极的布线距离处于与所述第一或第二布线膜中较长的一个的至少一部分相对，并且由所述热电阻调节膜形成为 具有比绝缘膜更大散热的材料。

    Infrared sensor and infrared sensor array
    8.
    发明授权
    Infrared sensor and infrared sensor array 有权

    公开(公告)号：US12007283B2

    公开(公告)日：2024-06-11

    申请号：US17347467

    申请日：2021-06-14

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Kouhei Takahashi ,  Naoki Tambo ,  Kunihiko Nakamura ,  Masaki Fujikane ,  Yasuyuki Naito

    IPC: H10N19/00 ,  G01J5/22 ,  G01J5/20

    CPC classification number: G01J5/22 ,  H10N19/00 ,  G01J2005/206

    Abstract: Each of first and second beams has a connection portion connected to a base substrate and a separated portion away from the base substrate, and is physically joined to an infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams, and includes lower electrode, upper electrode, and a resistance change film. The resistance change film is sandwiched by the lower electrode and upper electrode in a thickness direction, each of the lower and upper electrodes is electrically connected to the resistance change film, the lower and upper electrodes are electrically connected to first wiring and second wiring, respectively, at least one electrode selected from the lower electrode and the upper electrode has a line-and-space structure, and an infrared reflection film is provided at a position on a surface of the base substrate facing the infrared receiver.

    MICROBOLOMETER DEVICES IN CMOS AND BiCMOS TECHNOLOGIES
    9.
    发明申请
    MICROBOLOMETER DEVICES IN CMOS AND BiCMOS TECHNOLOGIES 有权
    CMOS和BiCMOS技术中的微电脑器件

    公开(公告)号：US20160146672A1

    公开(公告)日：2016-05-26

    申请号：US14553203

    申请日：2014-11-25

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Qizhi LIU ,  Anthony K. STAMPER ,  Ronald F. WALLER

    IPC: G01J5/20 ,  H01L37/00 ,  H01J37/317

    CPC classification number: G01J5/20 ,  G01J5/024 ,  G01J2005/202 ,  G01J2005/206 ,  H01J37/3171 ,  H01J2237/31701 ,  H01L37/00

    Abstract: A microbolometer device integrated with CMOS and BiCMOS technologies and methods of manufacture are disclosed. The method includes forming a microbolometer unit cell, comprises damaging a portion of a substrate to form a damaged region. The method further includes forming infrared (IR) absorbing material on the damaged region. The method further includes isolating the IR absorbing material by forming a cavity underneath the IR absorbing material.

    Abstract translation: 公开了与CMOS和BiCMOS技术以及制造方法集成的微测辐射计装置。 该方法包括形成微量热计单元电池，包括损坏基板的一部分以形成受损区域。 该方法还包括在损伤区域上形成红外（IR）吸收材料。 该方法还包括通过在IR吸收材料下形成空腔来隔离IR吸收材料。

Patent Agency Ranking