公开(公告)号：US20240210350A1

公开(公告)日：2024-06-27

申请号：US18423977

申请日：2024-01-26

申请人： Government of the United States as Represented by the Secretary of the Air Force

发明人： Steve S Kim ,  Rajesh Naik ,  Claude C Grigsby ,  Jennifer A. Martin ,  Michael Brothers ,  Yen H Ngo

IPC分类号： G01N27/414

CPC分类号： G01N27/4141 ,  G01N27/4146

摘要： Disclosed is a selective chemical sensor, methods of production, and methods of use, where the sensor utilizes an electrochemical sensor element protected by a semi-selective polymeric matrix in conjunction with a selecting compound doped into the matrix along with an acid or base. The polymeric matrix serves as an analyte capture matrix, while the selecting compound reacts with the analyte, further improving the selectivity of the sensor.

公开(公告)号：US11933752B2

公开(公告)日：2024-03-19

申请号：US16520219

申请日：2019-07-23

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Satoru Fujii ,  Zhiqiang Wei ,  Kazunari Homma ,  Shinichi Yoneda ,  Yasuhisa Naito ,  Hisashi Shima ,  Hiroyuki Akinaga

IPC分类号： G01N27/12 ,  G01N27/414 ,  G01N33/00 ,  H01M8/04

CPC分类号： G01N27/125 ,  G01N27/4141 ,  G01N33/005 ,  H01M8/04

摘要： A gas sensor includes: a gas-sensitive body layer disposed above a substrate and including a metal oxide layer; a first electrode on the gas-sensitive body layer; and a second electrode on the gas-sensitive body layer, being apart from the first electrode by a gap. The gas-sensitive body layer has a resistance change characteristic that reversibly transitions to a high-resistance state and a low-resistance state on basis of a voltage applied across the first electrode and the second electrode. At least a part of the gas-sensitive body layer is exposed to the gap. The gas-sensitive body layer has a resistance that decreases when gas containing a hydrogen atom is in contact with the second electrode.

公开(公告)号：US11921081B2

公开(公告)日：2024-03-05

申请号：US17255014

申请日：2019-05-27

申请人： HAMAMATSU PHOTONICS K.K. ,  National University Corporation TOYOHASHI UNIVERSITY OF TECHNOLOGY

发明人： Toshiki Wakamori ,  Shinichi Nakahigashi ,  Kazuaki Sawada

IPC分类号： G01N27/414 ,  G01N33/00

CPC分类号： G01N27/4141 ,  G01N33/0031

摘要： A smell sensor includes an ion sensor in which a sensing section provided with a sensitive film configured to change a potential in accordance with a state of a measurement target is formed on a semiconductor substrate; a substance adsorption film disposed on the sensitive film and configured to change the state with adsorption of a smell substance; and a reference electrode configured to apply a reference voltage to the substance adsorption film. The reference electrode is disposed to be separated from the sensitive film and not to overlap the sensing section when viewed in a thickness direction of the semiconductor substrate.

公开(公告)号：US11921080B2

公开(公告)日：2024-03-05

申请号：US17139517

申请日：2020-12-31

申请人： KOREA ELECTRONICS TECHNOLOGY INSTITUTE

发明人： Kook Nyung Lee ,  Woo Kyeong Seong ,  Won Hyo Kim ,  Dong Ki Hong ,  Hye Lim Kang

IPC分类号： G01N27/414

CPC分类号： G01N27/4141

摘要： The gas sensor according to an exemplary embodiment of the present invention comprises: an FET device including one or more gate electrodes; a sensor array part including a plurality of sensors, in which a first electrode of each sensor is connected to at least one gate electrode of the plurality of gate electrodes in the FET device; and a controller detecting a gas using a current between a drain-source in response to voltage changes in the gate electrode of the FET device, wherein each sensor includes: a first electrode connected to a gate electrode of the FET device; a second electrode receiving an operating voltage through a switch controlled by the controller; and a detection film interposed between the first electrode and the second electrode.

公开(公告)号：US11906459B2

公开(公告)日：2024-02-20

申请号：US17292844

申请日：2019-08-16

申请人： National Research Council of Canada

发明人： Jacques Lefebvre ,  François Lapointe

IPC分类号： G01N27/22 ,  G01N27/12 ,  G01N27/414

CPC分类号： G01N27/225 ,  G01N27/121 ,  G01N27/4141 ,  G01N27/4146

摘要： An electronic device for sensing a target analyte in a gas, liquid or vapor sample, the device has at least two sensing elements, each sensing element having an exposed layer of a transduction material supported on a dielectric substrate. The dielectric substrate of at least one of the sensing elements is made of a different dielectric material than the dielectric substrate of at least one other of the sensing elements. The different dielectric materials providing a different sensing response according to one or more transduction modes. The plurality of sensing elements in the device yield a specific transduction pattern for a specific target analyte in a gas, liquid or vapor sample.

公开(公告)号：US11874244B2

公开(公告)日：2024-01-16

申请号：US16818075

申请日：2020-03-13

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Yoshiaki Sugizaki ,  Tatsuro Saito

IPC分类号： G01N27/12 ,  G01N33/497 ,  B01L3/00 ,  G01N33/543 ,  G01N27/414 ,  H01L29/16

CPC分类号： G01N27/12 ,  B01L3/508 ,  G01N27/4141 ,  G01N33/497 ,  G01N33/54373 ,  B01L2300/06 ,  B01L2300/12 ,  H01L29/1606

摘要： According to one embodiment, an apparatus for maintaining liquid membrane includes a liquid supply unit which supplies a liquid onto a sensor element and forms a liquid membrane, and a liquid discharge unit which discharges the liquid in the liquid membrane.

公开(公告)号：US11867657B2

公开(公告)日：2024-01-09

申请号：US17767191

申请日：2020-10-01

申请人： KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

发明人： Mani Teja Vijjapu ,  Sandeep G. Surya ,  Saravanan Yuvaraja ,  Khaled Nabil Salama

IPC分类号： G01N27/407 ,  G01N27/414 ,  G01N33/00

CPC分类号： G01N27/4075 ,  G01N27/4141 ,  G01N33/0037

摘要： A gas sensor includes a gate electrode; a dielectric layer covering one surface of the gate electrode; an indium (In) gallium (Ga) zinc (Zn) oxide (O) (IGZO) thin-film formed over the dielectric layer, and first and second metallic electrodes formed on a surface of the IGZO thin-film to act as source and drain, respectively. The IGZO thin-film has an In concentration of 11%+/−3%, Ga concentration of 11%+/−3%, Zn concentration of 7%+/−3%, and O concentration of 71%+/−3%, with a sum of the concentrations being 100%, and the gas interacts with the IGZO thin-film and changes a current through the IGZO thin-film.

公开(公告)号：US11862716B2

公开(公告)日：2024-01-02

申请号：US17955072

申请日：2022-09-28

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Berend T. Jonker ,  Connie H. Li ,  Kathleen M. McCreary ,  Olaf M. J. van 't Erve

IPC分类号： H01L29/66 ,  H01L33/00 ,  G01N27/414 ,  H01L21/02 ,  H01L29/786 ,  H01L21/18 ,  H01L33/04 ,  H01L33/26 ,  H01L29/24 ,  H01L29/778 ,  H01L29/861 ,  H01L29/739

CPC分类号： H01L29/66977 ,  G01N27/4141 ,  H01L21/02658 ,  H01L21/187 ,  H01L29/78696 ,  H01L33/002 ,  H01L21/0242 ,  H01L21/0262 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02568 ,  H01L29/24 ,  H01L29/7391 ,  H01L29/778 ,  H01L29/861 ,  H01L33/04 ,  H01L33/26

摘要： Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.

公开(公告)号：US20230168223A1

公开(公告)日：2023-06-01

申请号：US18154235

申请日：2023-01-13

申请人： Lyten, Inc.

发明人： Bruce Lanning ,  Michael W. Stowell ,  Carlos Montalvo ,  Daniel Cook ,  Sung H. Lim ,  Shreeyukta Singh ,  John Chmiola

IPC分类号： G01N27/414 ,  C01B32/182 ,  B01J20/28 ,  C23C20/00 ,  H01M4/62 ,  H01M10/0525 ,  H01M12/08 ,  H01M4/66 ,  H01M4/80 ,  H01M4/96

CPC分类号： G01N27/4141 ,  C01B32/182 ,  B01J20/28066 ,  C23C20/00 ,  H01M4/62 ,  H01M4/625 ,  H01M10/0525 ,  H01M12/08 ,  H01M4/663 ,  H01M4/667 ,  H01M4/801 ,  H01M4/96 ,  G01N2291/014 ,  G01N33/0044

摘要： A battery-powered analyte sensing system includes a printed battery and an analyte sensor. The printed battery includes an anode composed of a non-toxic biocompatible metal, a first carbon-based current collector in electrical contact with the anode, a three-dimensional hierarchical mesoporous carbon-based cathode, a second carbon-based current collector, and an electrolyte layer disposed between the anode and the cathode, the electrolyte layer configured to activate the printed battery when the electrolyte is released into one or both the anode and the cathode. The analyte sensor includes a sensing material and a reactive chemistry additive in the sensing material.

公开(公告)号：US20190154630A1

公开(公告)日：2019-05-23

申请号：US16236139

申请日：2018-12-28

申请人： Honeywell International Inc.

发明人： Cornel P. Cobianu ,  Bogdan-Catalin Serban ,  Viorel Georgel Dumitru ,  Octavian Buiu ,  Alisa Stratulat ,  Mihai Brezeanu

IPC分类号： G01N27/414 ,  G01N33/00 ,  H03F3/45 ,  H01L29/788 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC分类号： G01N27/4141 ,  G01N27/4146 ,  G01N27/4148 ,  G01N33/0047 ,  H01L29/0649 ,  H01L29/66977 ,  H01L29/7832 ,  H01L29/788 ,  H03F3/45179 ,  H03F2200/261

摘要： A gas sensor includes a field effect transistor supported on an oxide layer of a substrate, the field effect transistor having a doped source (p+ doped for T-FET and n+ doped for FET) and an n+ doped drain separated by an channel region (intrinsic for T-FET or slightly p-doped for FET), and a floating gate separated from the channel region by a gate oxide, a passivation layer covering the floating gate, and a sensing layer supported by the passivation layer, the sensing layer comprising nanofibers.