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    LIGHT-EMITTING SEMICONDUCTOR STRUCTURE AND OPTOELECTRONIC COMPONENT THEREFROM
    2.
    发明申请
    LIGHT-EMITTING SEMICONDUCTOR STRUCTURE AND OPTOELECTRONIC COMPONENT THEREFROM 有权
    发光二极管结构和光电子元件

    公开(公告)号：US20130223464A1

    公开(公告)日：2013-08-29

    申请号：US13688330

    申请日：2012-11-29

    Applicant: IHP-GmbH- Innovations for High Performance

    Inventor： Martin Kittler ,  Tzanimir Arguirov ,  Manfred Reiche

    IPC: H01S5/30

    CPC classification number: H01S5/305 ,  H01L33/0037 ,  H01L33/0079 ,  H01L33/025 ,  H01L33/34 ,  H01L33/58

    Abstract: A light emitting semiconductor device according the invention includes an SOI substrate, a collector and an injector. The SOI substrate includes a carrier layer, a buried oxide layer on the carrier layer, and a doped silicon layer structure with a conductivity type. The doped silicon layer structure with the conductivity type includes at least two silicon- or silicon germanium layers arranged adjacent to one another, wherein a dislocation network is configured in their interface portions at which dislocation network a radiative charge carrier combination with a light energy is provided, which light energy is smaller than a band gap energy of the silicon- or silicon germanium layers. The collector is formed as a pn-junction in a portion between the dislocation network and a surface of the silicon layer structure that is oriented away from the carrier layer, and wherein the injector is configured as a metal insulator semiconductor diode.

    Abstract translation: 根据本发明的发光半导体器件包括SOI衬底，集电极和注射器。 SOI衬底包括载体层，载体层上的掩埋氧化物层和具有导电类型的掺杂硅层结构。 具有导电类型的掺杂硅层结构包括彼此相邻布置的至少两个硅或锗锗层，其中位错网络在其界面部分中配置，在该界面部分中提供了具有光能的辐射电荷载流子组合 ，其光能小于硅或锗锗层的带隙能量。 集电体在位错网络和硅层结构的远离载体层的表面之间的部分中形成为pn结，并且其中注入器被配置为金属绝缘体半导体二极管。

    Light-emitting Diodes With Carrier Extraction Electrodes
    3.
    发明申请
    Light-emitting Diodes With Carrier Extraction Electrodes 有权
    带载体提取电极的发光二极管

    公开(公告)号：US20090273293A1

    公开(公告)日：2009-11-05

    申请号：US12243117

    申请日：2008-10-01

    Applicant: Alexandre Bratkovski ,  Shih-Yuan Wang ,  Michael Tan ,  Theodore I. Kamins

    Inventor： Alexandre Bratkovski ,  Shih-Yuan Wang ,  Michael Tan ,  Theodore I. Kamins

    IPC: H05B37/00 ,  H01L33/00

    CPC classification number: H01L33/0037 ,  H01L33/20 ,  H01L33/385 ,  H05B33/0818 ,  H05B33/0821 ,  H05B37/0272

    Abstract: One embodiment of the present invention relates to a light-emitting diode having one or more light-emitting layers, a pair of electrodes disposed on the light-emitting diode so that an operating voltage can be applied to generate light from the one or more light-emitting layers, and at least one external electrode in electronic communication with the one or more light-emitting layers. Applying an appropriate voltage to the at least one external electrodes at about the time the operating voltage is terminated extracts excess electrons from the one or more light-emitting layers and reduces the duration of electron-hole recombination during the time period over which the operating voltage is turned off.

    Abstract translation: 本发明的一个实施例涉及具有一个或多个发光层的发光二极管，设置在发光二极管上的一对电极，使得可以施加工作电压以产生来自一个或多个光的光 以及与所述一个或多个发光层电连通的至少一个外部电极。 大约在工作电压终止时将适当的电压施加到至少一个外部电极，从一个或多个发光层提取出多余的电子，并减少在工作电压的时间段内的电子 - 空穴复合的持续时间 已关闭

    High speed electron tunneling devices
    4.
    发明授权
    High speed electron tunneling devices 有权
    高速电子隧道装置

    公开(公告)号：US07595500B2

    公开(公告)日：2009-09-29

    申请号：US11503585

    申请日：2006-08-14

    Applicant: Garret Moddel ,  Blake J. Eliasson

    Inventor： Garret Moddel ,  Blake J. Eliasson

    IPC: H01L29/08

    CPC classification number: H01L27/1446 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L29/7311 ,  H01L29/7606 ,  H01L29/82 ,  H01L31/08 ,  H01L31/101 ,  H01L33/0004 ,  H01L33/0037 ,  H01L39/22 ,  H01L45/00

    Abstract: A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form an antenna for receiving electromagnetic radiation and directing it to a specific location within the detector. The detector also includes an arrangement serving as a transport of electrons, including tunneling, between and to the first and second non-insulating layers when electromagnetic radiation is received at the antenna. The arrangement includes a first insulating layer and a second layer configured such that using only the first insulating in the arrangement would result in a given value of nonlinearity in the transport of electrons while the inclusion of the second layer increases the nonlinearity above the given value. A portion of the electromagnetic radiation incident on the antenna is converted to an electrical signal at an output.

    Abstract translation: 检测器包括用于提供偏置电压的电压源和第一和第二非绝缘层，其间隔开，使得偏置电压可以在其间施加，并形成用于接收电磁辐射的天线，并将其引导到位于 探测器。 当在天线处接收到电磁辐射时，检测器还包括用作电子传输的装置，包括隧穿，并在第一和第二非绝缘层之间和之间。 该布置包括第一绝缘层和第二层，其被配置为使得仅使用布置中的第一绝缘体将导致电子传输中的非线性的给定值，而包含第二层的非线性增加了高于给定值的非线性。 入射在天线上的电磁辐射的一部分在输出端被转换成电信号。

    Light emitting device
    5.
    发明申请
    Light emitting device 有权
    发光装置

    公开(公告)号：US20080142782A1

    公开(公告)日：2008-06-19

    申请号：US12000360

    申请日：2007-12-12

    Applicant: Won Ha Moon ,  Chang Hwan Choi ,  Dong Woohn Kim ,  Hyun Jun Kim

    Inventor： Won Ha Moon ,  Chang Hwan Choi ,  Dong Woohn Kim ,  Hyun Jun Kim

    IPC: H01L33/00

    CPC classification number: H01L33/0037 ,  H01L33/08 ,  H01L33/22 ,  H01L2933/0083 ,  Y10S977/762

    Abstract: There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

    Abstract translation: 提供了一种结构简单的发光器件，其能够在简化且经济有效的工艺制造的同时确保宽的发光面积和高发光效率。 该发光器件包括：半导体层; 形成在所述半导体层上的有源层，所述有源层包括量子阱结构，量子点和量子线中的至少一个; 形成在所述有源层上的绝缘层; 以及形成在所述绝缘层上的金属层。

    Thin-film transistors based on tunneling structures and applications
    6.
    发明申请
    Thin-film transistors based on tunneling structures and applications 失效
    基于隧道结构和应用的薄膜晶体管

    公开(公告)号：US20060012000A1

    公开(公告)日：2006-01-19

    申请号：US11113587

    申请日：2005-04-25

    Applicant: Michael Estes ,  Blake Eliasson

    Inventor： Michael Estes ,  Blake Eliasson

    IPC: H01L29/82

    CPC classification number: H01L29/7606 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L27/1446 ,  H01L29/7311 ,  H01L29/82 ,  H01L31/08 ,  H01L31/101 ,  H01L33/0004 ,  H01L33/0037 ,  H01L45/00

    Abstract: A hot electron transistor includes an emitter electrode, a base electrode, a collector electrode, and a first tunneling structure disposed and serving as a transport of electrons between the emitter and base electrodes. The first tunneling structure includes at least a first amorphous insulating layer and a different, second insulating layer such that the transport of electrons includes transport by means of tunneling. The transistor further includes a second tunneling structure disposed between the base and collector electrodes. The second tunneling structure serves as a transport of at least a portion of the previously mentioned electrons between the base and collector electrodes by means of ballistic transport such that the portion of the electrons is collected at the collector electrode. An associated method for reducing electron reflection at interfaces in a thin-film transistor is also disclosed.

    Abstract translation: 热电子晶体管包括发射极，基极，集电极和第一隧道结构，其布置并用作发射极和基极之间的电子传输。 第一隧道结构包括至少第一非晶绝缘层和不同的第二绝缘层，使得电子的传输包括通过隧道传输。 晶体管还包括设置在基极和集电极之间的第二隧道结构。 第二隧道结构用作通过弹道传输使得电子部分在集电极处收集的基极和集电极之间的至少一部分前述电子的传输。 还公开了一种用于在薄膜晶体管的界面处减少电子反射的相关方法。

    Method for locally modifying electronic and optoelectronic properties of crystalline materials an devices made from such materials
    7.
    发明申请
    Method for locally modifying electronic and optoelectronic properties of crystalline materials an devices made from such materials 有权
    用于局部改变结晶材料的电子和光电性能的方法由这种材料制成的器件

    公开(公告)号：US20030150376A1

    公开(公告)日：2003-08-14

    申请号：US10297115

    申请日：2003-04-07

    Inventor： Kevin P. Homewood ,  Russell Mark Gwilliam ,  Guosheng Shao

    IPC: C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

    CPC classification number: H01L33/34 ,  H01L33/0008 ,  H01L33/0037 ,  H01L33/025 ,  H01S5/2063

    Abstract: An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the lattice structure of said crystalline material and the electronic and/or optoelectronic parameters of said device are dependent on the modification of said bandgap is exemplified by a radiation emissive optoelectronic semiconductor device which comprises a junction (10) formed from a p-type layer (11) and an n-type layer (12), both formed from indirect bandgap semiconductor material. The p-type layer (11) contains an array of dislocation loops which create a strain field to confine spatially and promote radiative recombination of the charge carriers.

    Abstract translation: 由结晶材料制造的电子或光电子器件，其中所述结晶材料的带隙特征的参数已经通过在所述结晶材料的晶格结构中引入原子尺度的失真而局部地修饰，并且电子和/或光电参数 所述器件取决于所述带隙的修改，例如包括由p型层（11）形成的结（10）和n型层（12）的辐射发射光电子半导体器件，两者都由间接形成 带隙半导体材料。 p型层（11）包含位错环的阵列，其产生应变场以在空间上限制并促进电荷载体的辐射复合。

    Electroluminescent semiconductor device for generating ultra violet radiation
    8.
    发明授权
    Electroluminescent semiconductor device for generating ultra violet radiation 失效
    用于产生超紫外线辐射的电致发光半导体器件

    公开(公告)号：US3740622A

    公开(公告)日：1973-06-19

    申请号：US3740622D

    申请日：1972-07-10

    Applicant: RCA CORP

    Inventor： PANKOVE J ,  NORRIS P

    IPC: H01L33/00 ,  H01S5/00 ,  H01S5/026 ,  H01S5/323 ,  H01L3/00

    CPC classification number: H01L33/007 ,  H01L33/0037

    Abstract: An electroluminescent semiconductor device including a body of crystalline gallium nitride, a layer of silicon nitride on a surface of the body, a metal layer on the silicon nitride layer and an ohmic metal contact on the body. When a bias is applied between the metal layer and the contact which with respect to the ohmic contact is first negative and then positive, ultra violet radiation will be emitted from the body.

    Abstract translation: 一种电致发光半导体器件，包括晶体氮化镓体，主体表面上的氮化硅层，氮化硅层上的金属层和体上的欧姆金属接触。 当在金属层和接触之间施加偏压时，相对于欧姆接触，偏压首先是负的，然后是正的，紫外线辐射将从身体发射。

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