公开(公告)号：US07050937B2

公开(公告)日：2006-05-23

申请号：US10791808

申请日：2004-03-04

Applicant: Sang-in Lee

Inventor： Sang-in Lee

IPC: G06F19/00

CPC classification number: B25J9/1674 ,  G05B2219/37605 ,  G05B2219/40602

Abstract: A performance test system includes a measuring device to measure an object device, and a computing device having a controller to test performance of the object device based on measured data transmitted from the measuring device, wherein the controller controls to display a report setup window through which data to be reflected in a measurement report is inputted, a coordinate-system setup window through which a coordinate system is set up based on the object device, and a measuring option setup window through which options for measuring the performance of the object device are set up, controls operation of the measuring device and the object device based on the options set up through the measuring option setup window, and tests the performance of the object device based on the measured data transmitted from the measuring device according to the operation of the object device and the measuring device, and controls to display a report window to process and to output report data inputted through the report setup window and the measured data transmitted from the measuring device. The present invention provides a performance measurement system, in which performance of an object device is measured, the performance measurement is reported with measured data and various report data, and an interface convenient for a user is provided.

Abstract translation: 性能测试系统包括测量对象设备的测量设备和具有控制器的计算设备，该控制器基于从测量设备发送的测量数据来测试对象设备的性能，其中控制器控制显示报告设置窗口，通过该设置窗口 输入要反映在测量报告中的数据，基于对象设备建立坐标系的坐标系设置窗口以及用于测量对象设备的性能的选项的测量选项设置窗口 基于通过测量选项设置窗口设置的选项来控制测量设备和对象设备的操作，并且基于根据对象的操作从测量设备发送的测量数据来测试对象设备的性能 设备和测量设备，并控制显示报告窗口以处理和输出输入的报告数据 通过报告设置窗口和从测量设备发送的测量数据。 本发明提供了一种性能测量系统，其中测量对象设备的性能，通过测量数据和各种报告数据报告性能测量，并提供对用户方便的接口。

公开(公告)号：US20050027479A1

公开(公告)日：2005-02-03

申请号：US10791808

申请日：2004-03-04

Applicant: Sang-in Lee

Inventor： Sang-in Lee

IPC: G05B23/02 ,  G01M99/00 ,  G21C17/00

CPC classification number: B25J9/1674 ,  G05B2219/37605 ,  G05B2219/40602

Abstract: A performance test system includes a measuring device to measure an object device, and a computing device having a controller to test performance of the object device based on measured data transmitted from the measuring device, wherein the controller controls to display a report setup window through which data to be reflected in a measurement report is inputted, a coordinate-system setup window through which a coordinate system is set up based on the object device, and a measuring option setup window through which options for measuring the performance of the object device are set up, controls operation of the measuring device and the object device based on the options set up through the measuring option setup window, and tests the performance of the object device based on the measured data transmitted from the measuring device according to the operation of the object device and the measuring device, and controls to display a report window to process and to output report data inputted through the report setup window and the measured data transmitted from the measuring device. The present invention provides a performance measurement system, in which performance of an object device is measured, the performance measurement is reported with measured data and various report data, and an interface convenient for a user is provided.

Abstract translation: 性能测试系统包括测量对象设备的测量设备和具有控制器的计算设备，该控制器基于从测量设备发送的测量数据来测试对象设备的性能，其中控制器控制显示报告设置窗口，通过该设置窗口 输入要反映在测量报告中的数据，基于对象设备建立坐标系的坐标系设置窗口以及用于测量对象设备的性能的选项的测量选项设置窗口 基于通过测量选项设置窗口设置的选项来控制测量设备和对象设备的操作，并且基于根据对象的操作从测量设备发送的测量数据来测试对象设备的性能 设备和测量设备，并控制显示报告窗口以处理和输出输入的报告数据 通过报告设置窗口和从测量设备发送的测量数据。 本发明提供了一种性能测量系统，其中测量对象设备的性能，通过测量数据和各种报告数据报告性能测量，并提供对用户方便的接口。

公开(公告)号：US20050012089A1

公开(公告)日：2005-01-20

申请号：US10504704

申请日：2003-07-16

Applicant: Yoshihide Senzaki ,  Sang-In Lee

Inventor： Yoshihide Senzaki ,  Sang-In Lee

IPC: H01L27/04 ,  C23C16/30 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L35/24

CPC classification number: H01L21/02271 ,  C23C16/308 ,  H01L21/02148 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/31645

Abstract: The invention is directed to gate and capacitor dielectrics for use in making advanced high-g stack structures. According to the invention, a metal alkyamide, wherein the metal is halfnium (Hf) or zirconium (Zr) is used in a MOCVD or ALD process to create metal oxynitride or metal silicon oxynitride dielectric layers. In general, the metal oxynitride or metal silicon oxynitride layers are positioned between a silicon substrate and a doped polycrystalline silicone (Poly Si) layer.

Abstract translation: 本发明涉及用于制造先进的高g堆叠结构的栅极和电容器电介质。 根据本发明，在MOCVD或ALD工艺中使用其中金属为铪（Hf）或锆（Zr）的金属烷酰胺，以产生金属氮氧化物或金属氮氧化硅电介质层。 通常，金属氧氮化物或金属氮氧化硅层位于硅衬底和掺杂多晶硅（Poly Si）层之间。

公开(公告)号：US06478872B1

公开(公告)日：2002-11-12

申请号：US09467313

申请日：1999-12-20

Applicant: Yun-sook Chae ,  In-sang Jeon ,  Sang-bom Kang ,  Sang-in Lee ,  Kyu-wan Ryu

Inventor： Yun-sook Chae ,  In-sang Jeon ,  Sang-bom Kang ,  Sang-in Lee ,  Kyu-wan Ryu

IPC: C30B2500

CPC classification number: C30B25/14 ,  C23C16/45548 ,  C23C16/45565 ,  C23C16/45574

Abstract: A method of delivering two or more mutually-reactive reaction gases when a predetermined film is deposited on a substrate, and a shower head used in the gas delivery method, function to increase the film deposition rate while preventing formation of contaminating particles. In this method, one reaction gas is delivered toward the edge of the substrate, and the other reaction gases are delivered toward the central portion of the substrate, each of the reaction gases being delivered via an independent gas outlet to prevent the reaction gases from being mixed. In the shower head, separate passages are provided to prevent the first reaction gas from mixing with the other reaction gases by delivering the first reaction gas from outlets formed around the edge of the bottom surface of the shower head. The other reaction gases are delivered from outlets formed in the central portion of the bottom surface of the shower head. Accordingly, one of the mutually-reactive gases is delivered toward the central portion of the substrate, and the others are delivered toward the edge of the substrate.

Abstract translation: 当将预定的膜沉积在基底上时输送两个或更多个相互反应的反应气体的方法和用于气体输送方法的淋浴头的作用是提高膜沉积速率同时防止污染颗粒的形成。 在该方法中，一个反应气体被输送到基板的边缘，并且其它反应气体被输送到基板的中心部分，每个反应气体经由独立的气体出口输送，以防止反应气体 混合 在喷淋头中，设置分开的通道，以防止第一反应气体与其它反应气体混合，通过从喷淋头底表面的边缘周围形成的出口输送第一反应气体。 其他反应气体从形成在淋浴喷头的底面的中心部分的出口输送。 因此，相互反应的气体中的一种被输送到基板的中心部分，而其它的被传送到基板的边缘。

公开(公告)号：US06391769B1

公开(公告)日：2002-05-21

申请号：US09525154

申请日：2000-03-14

Applicant: Jong-myeong Lee ,  Hyun-seok Lim ,  Byung-hee Kim ,  Gil-heyun Choi ,  Sang-in Lee

Inventor： Jong-myeong Lee ,  Hyun-seok Lim ,  Byung-hee Kim ,  Gil-heyun Choi ,  Sang-in Lee

IPC: H01L214763

CPC classification number: H01L21/76855 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76882 ,  H01L21/76888 ,  H01L2221/1089

Abstract: A method for forming a metal interconnection filling a contact hole or a groove having a high aspect ratio, and a contact structure fabricated thereby. An interdielectric layer pattern, having a recessed region serving as a contact hole, a via hole or a groove, is formed on a semiconductor substrate. A barrier metal layer is formed on the entire surface of the resultant structure where the interdielectric layer pattern is formed. An anti-nucleation layer is selectively formed only on the non-recessed region of the barrier metal layer. The anti-nucleation layer is formed by forming a metal layer overlying the barrier metal layer in regions other than the recessed region, and then spontaneously oxidizing the metal layer in a vacuum. Also, the anti-nucleation layer may be formed by in-situ forming the barrier metal layer and the metal layer and then oxidizing the metal layer by an annealing process. Subsequently, a metal plug is selectively formed in the recessed region, surrounded by the barrier metal layer, thereby forming a metal interconnection for completely filling the contact hole or the groove having a high aspect ratio. A metal liner may be formed instead of the metal plug, followed by forming a metal layer filling the region surrounded by the metal liner, thereby forming a metal interconnection for completely filling the contact hole or groove having a high aspect ratio.

Abstract translation: 一种用于形成填充高纵横比的接触孔或槽的金属互连的方法，以及由此制造的接触结构。 在半导体衬底上形成具有用作接触孔的凹陷区域，通孔或沟槽的电介质层图案。 在形成介电层图案的所得结构的整个表面上形成阻挡金属层。 仅在阻挡金属层的非凹陷区域选择性地形成抗成核层。 通过在除了凹陷区域之外的区域中形成覆盖阻挡金属层的金属层，然后在真空中自发氧化金属层，形成抗成核层。 此外，抗成核层可以通过原位形成阻挡金属层和金属层，然后通过退火处理来氧化金属层而形成。 随后，在由阻挡金属层包围的凹陷区域中选择性地形成金属插塞，从而形成用于完全填充接触孔或具有高纵横比的沟槽的金属互连。 可以形成金属衬垫而不是金属插塞，随后形成填充由金属衬垫包围的区域的金属层，从而形成用于完全填充具有高纵横比的接触孔或槽的金属互连。

公开(公告)号：US06180447B2

公开(公告)日：2001-01-30

申请号：US09223540

申请日：1998-12-30

Applicant: Chang-soo Park ,  Sang-in Lee ,  Hong-ku Paik

Inventor： Chang-soo Park ,  Sang-in Lee ,  Hong-ku Paik

IPC: H01L218242

CPC classification number: H01L21/7687 ,  H01L21/28568 ,  H01L21/76841 ,  H01L21/76849 ,  H01L21/76855 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75

Abstract: A barrier layer is included in an integrated circuit capacitor, between a conductive plug and a lower capacitor electrode. The barrier layer includes refractory metal and grain boundary filling material. The grain boundary filling material preferably is Ce, Zr, Y, Th, Hf, La, Al and/or oxides thereof, and is preferably less that 20 atomic percent of the barrier layer. The barrier layer can reduce and preferably prevent diffusion of oxygen, and can thereby reduce the leakage current and oxidation of the integrated circuit capacitor.

Abstract translation: 在集成电路电容器中包括阻挡层，在导电插塞和下电容器电极之间。 阻挡层包括难熔金属和晶界填充材料。 晶界填充材料优选为Ce，Zr，Y，Th，Hf，La，Al和/或其氧化物，优选小于阻挡层的20原子％。 阻挡层可以减少并优选地防止氧的扩散，并且因此可以减小集成电路电容器的漏电流和氧化。

公开(公告)号：US6156644A

公开(公告)日：2000-12-05

申请号：US760594

申请日：1996-12-04

Applicant: Kwang-man Ko ,  Sang-in Lee

Inventor： Kwang-man Ko ,  Sang-in Lee

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L21/44 ,  H01L21/4763 ,  H01L29/40

CPC classification number: H01L21/76865 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76855

Abstract: Interconnects for semiconductor devices are formed by forming a reaction control layer on a lower conductive layer of a semiconductor device, forming a reactive metal layer on the reaction control layer, opposite the lower conductive layer, reacting the lower conductive layer with the reactive metal layer, through the reaction control layer, to form an ohmic contact for the semiconductor device, and forming an upper conductive layer on the ohmic contact, opposite the lower conductive layer. Interconnects so formed may provide reduced contact resistance and reduced agglomeration of the ohmic contact region, independent of reaction temperatures. The reactive metal layer is preferably a refractory metal and the reaction control layer is preferably a refractory metal compound. The upper conductive layer is also preferably a refractory metal.

Abstract translation: 通过在半导体器件的下导电层上形成反应控制层，在反应控制层上形成与下导电层相反的反应性金属层，使下导电层与反应性金属层反应，形成半导体器件互连， 通过反应控制层，形成用于半导体器件的欧姆接触，以及在欧姆接触上形成与下导电层相对的上导电层。 如此形成的互连可以提供降低的接触电阻并且减小欧姆接触区的附聚，而与反应温度无关。 反应性金属层优选为难熔金属，反应控制层优选为难熔金属化合物。 上导电层也优选为难熔金属。

公开(公告)号：US6139700A

公开(公告)日：2000-10-31

申请号：US163479

申请日：1998-09-30

Applicant: Sang-Bom Kang ,  Sang-In Lee

Inventor： Sang-Bom Kang ,  Sang-In Lee

IPC: C23C16/14 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  C23C14/34 ,  H01L23/52

CPC classification number: H01L23/53257 ,  C23C16/14 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76856 ,  H01L23/5226 ,  H01L2924/0002

Abstract: A method and an apparatus of fabricating a metal interconnection in a contact hole of a semiconductor device reduces contact resistance and improves step coverage. A contact hole is opened in an interlayer insulating film formed on a semiconductor substrate. A conductive layer used as an ohmic contact layer is formed on the interlayer insulating film including the contact hole. An upper surface of the conductive layer is nitrided to form a protective layer. An ALD (atomic layer deposition)-metal barrier layer is formed on the protective layer. The resulting metal barrier layer has good step coverage and no impurities, and the protective layer prevents defects in the conductive layer caused by precursor impurities used during the formation of the metal barrier layer.

Abstract translation: 在半导体器件的接触孔中制造金属互连的方法和装置降低了接触电阻并改善了台阶覆盖。 在形成于半导体基板上的层间绝缘膜中开设接触孔。 在包括接触孔的层间绝缘膜上形成用作欧姆接触层的导电层。 导电层的上表面被氮化以形成保护层。 在保护层上形成ALD（原子层沉积） - 金属阻挡层。 所得到的金属阻挡层具有良好的阶梯覆盖和无杂质，并且保护层防止了在形成金属阻挡层期间由前体杂质引起的导电层中的缺陷。

公开(公告)号：US5843843A

公开(公告)日：1998-12-01

申请号：US743916

申请日：1996-11-05

Applicant: Sang-in Lee ,  Gil-heyun Choi

Inventor： Sang-in Lee ,  Gil-heyun Choi

IPC: H01L21/768 ,  H01L21/28 ,  H01L21/30 ,  H01L21/3205 ,  H01L21/762 ,  H01L21/822 ,  H01L23/52 ,  H01L27/04 ,  H01L21/441

CPC classification number: H01L21/3003 ,  H01L21/76202 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76862 ,  H01L21/76877

Abstract: A method for forming wiring layer of a semiconductor device for improving the step coverage and filling of the contact hole is disclosed. After forming an underlayer of the wiring layer on a semiconductor substrate, the surface of the underlayer is hydrogen-treated by exposing the underlayer to hydrogen plasma or hydrogen radicals to thereby H-terminate the surface portion of the underlayer. Thus, the characteristics of the underlying layer is improved. When depositing a metal such aluminum or aluminum alloy on the underlayer to thereby form a first conductive layer, large grains of the deposited metal are obtained. The step coverage of the deposited metal layer is enhanced and the mobility of the metal grains is increased. When sputtering the metal at a high temperature or when heat-treating the metal layer which has been formed at a low temperature, the filling of the metal into the contact hole is improved.

Abstract translation: 公开了一种用于形成半导体器件的布线层的方法，用于改善台阶覆盖和接触孔的填充。 在半导体衬底上形成布线层的底层之后，通过将底层暴露于氢等离子体或氢自由基来对底层的表面进行氢处理，从而使底层的表面部分H终止。 因此，底层的特性得到改善。 当在底层上沉积诸如铝或铝合金的金属从而形成第一导电层时，获得沉积金属的大颗粒。 沉积的金属层的台阶覆盖率增加，并且金属颗粒的迁移率增加。 当在高温下溅射金属时，或者当在低温下形成的金属层进行热处理时，金属填充到接触孔中得到改善。

公开(公告)号：US5814556A

公开(公告)日：1998-09-29

申请号：US698372

申请日：1996-08-15

Applicant: Young-jin Wee ,  In-seon Park ,  Sang-in Lee

Inventor： Young-jin Wee ,  In-seon Park ,  Sang-in Lee

IPC: H01L21/285 ,  H01L21/28 ,  H01L21/768 ,  H01L21/4763

CPC classification number: H01L21/76877

Abstract: A method for forming a metal layer of an ultra-thin film according to metal deposition conditions and a method for forming metal wiring by filling a high aspect-ratio contact hole using cooling step prior to depositing the metal layer. In particular, the additional cooling process is performed before the process of depositing the metal layer and then the deposition process is performed in a state where the temperature of the wafer has been cooled down to a temperature in the range between -25.degree. C. and room temperature. The surface morphology of the deposited metal layer is improved and a continuous ultra-thin film can be obtained. Also, the aluminum filling characteristics in the contact hole having a high aspect-ratio are improved.

Abstract translation: 根据金属沉积条件形成超薄膜的金属层的方法以及通过在沉积金属层之前使用冷却步骤填充高纵横比接触孔来形成金属布线的方法。 特别地，在沉积金属层的过程之前进行附加的冷却过程，然后在晶片的温度已经冷却到-25℃和-25℃之间的温度的状态下进行沉积工艺，并且 室内温度。 沉积金属层的表面形态得到改善，可获得连续的超薄膜。 此外，具有高纵横比的接触孔中的铝填充特性得到改善。