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    Layer system comprising a silicon layer and a passivation layer, method for production a passivation layer on a silicon layer and the use of said system and method
    92.
    发明授权
    Layer system comprising a silicon layer and a passivation layer, method for production a passivation layer on a silicon layer and the use of said system and method 有权
    包括硅层和钝化层的层系统，在硅层上制造钝化层的方法以及所述系统和方法的使用

    公开(公告)号：US07872333B2

    公开(公告)日：2011-01-18

    申请号：US10524610

    申请日：2003-05-06

    申请人： Franz Laermer ,  Lutz Mueller ,  Winfried Bernhard

    发明人： Franz Laermer ,  Lutz Mueller ,  Winfried Bernhard

    IPC分类号： H01L23/58 ,  H01L21/70 ,  H01L29/06

    CPC分类号： H01L21/02252 ,  B81B2203/033 ,  B81C1/00571 ,  B81C2201/016 ,  H01L21/02123 ,  H01L21/02238 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3121 ,  H01L21/31612 ,  Y10S438/958

    摘要： A layer system is described including a silicon layer and a passivation layer which is applied at least regionally to the silicon layer's surface, the passivation layer having a first, at least largely inorganic partial layer and a second partial layer, the second partial layer being made of an organic compound including silicon or containing such a material. In particular, the second partial layer is structured in the form of a “self-assembled monolayer.” Furthermore, a method is described for creating a passivation layer on a silicon layer, a first, inorganic partial layer being created on the silicon layer and a second partial layer, containing an organic compound including silicon or being made thereof, being created at least in certain areas on the first partial layer. Both partial layers form the passivation layer. The described layer system or the described method is particularly suited for creating self-supporting structures in silicon.

    摘要翻译： 描述了一种层系统，其包括至少区域地施加到硅层表面的硅层和钝化层，钝化层具有第一至少大部分无机部分层和第二部分层，第二部分层被制成 包含硅或含有这种材料的有机化合物。 特别地，第二部分层以“自组装单层”的形式构成。此外，描述了一种在硅层上形成钝化层的方法，在硅层上形成第一无机部分层，以及 至少在第一部分层上的某些区域中产生含有包含硅或由其制成的有机化合物的第二部分层。 两个部分层形成钝化层。 所描述的层系统或所描述的方法特别适用于在硅中产生自支撑结构。

    Method of etching structures into an etching body using a plasma
    93.
    发明授权
    Method of etching structures into an etching body using a plasma 有权
    使用等离子体将结构刻蚀成蚀刻体的方法

    公开(公告)号：US07785486B2

    公开(公告)日：2010-08-31

    申请号：US10676295

    申请日：2003-09-30

    申请人： Andrea Urban ,  Franz Laermer ,  Klaus Breitschwerdt ,  Volker Becker

    发明人： Andrea Urban ,  Franz Laermer ,  Klaus Breitschwerdt ,  Volker Becker

    IPC分类号： G01L21/30 ,  B44C1/22 ,  C23F1/00

    CPC分类号： B81C1/00579 ,  H01J37/32082 ,  H01J37/32155 ,  H01J2237/3347 ,  H01L21/3065

    摘要： Additional variants of the method of etching structures into an etching body, in particular recesses in a silicon body that are laterally defined in a precise manner by an etching mask, using a plasma, is described. In addition, the use of this method in the introduction of structures, in particular trenches having a high aspect ratio, into a dielectric layer or a dielectric base body and in a layer of silicon is described, isotropic underetching and/or isotropic, sacrificial-layer etching, in particular using fluorine radicals or a highly oxidizing fluorine compound such as ClF3, being performed after the production of the structures in at least some areas in the case of the layer made of silicon.

    摘要翻译： 描述了使用等离子体将结构蚀刻到蚀刻体中，特别是通过蚀刻掩模以精确方式侧向限定的硅体中的凹陷的方法的附加变型。 另外，描述了将介电层或电介质基体和硅层中的结构（特别是具有高纵横比的沟槽）引入到这种方法中，各向同性的不均匀和/或各向同性， 在由硅制成的层的情况下在至少一些区域中制造结构之后进行层蚀刻，特别是使用氟基或高度氧化性的氟化合物如ClF 3。

    Device for capacitive pressure measurement and method for manufacturing a capacitive pressure measuring device
    96.
    发明授权
    Device for capacitive pressure measurement and method for manufacturing a capacitive pressure measuring device 失效
    电容式压力测量装置及制造电容式压力测量装置的方法

    公开(公告)号：US07321156B2

    公开(公告)日：2008-01-22

    申请号：US10897449

    申请日：2004-07-22

    申请人： Frank Fischer ,  Hans-Peter Trah ,  Franz Laermer ,  Lars Metzger

    发明人： Frank Fischer ,  Hans-Peter Trah ,  Franz Laermer ,  Lars Metzger

    IPC分类号： H01L29/82

    CPC分类号： G01L9/0073

    摘要： A device for manufacturing a capacitive pressure measurement includes an insulated base electrode, a mechanically deflectable counterelectrode composed of a layer made of at least one of a monocrystalline and polycrystalline semiconductor material, a contact arrangement for electrically connecting the electrodes, and at least one semiconductor component, all integrated onto a semiconductor substrate. The connection for the base electrode is formed by an electrically insulated conductive polycrystalline semiconductor layer. The method for manufactured the device includes the step of arranging a conductive polycrystalline semiconductor layer between two insulating layers on the semiconductor substrate for forming a base electrode.

    摘要翻译： 用于制造电容式压力测量的装置包括绝缘基极，由由单晶和多晶半导体材料中的至少一种构成的层，用于电连接电极的接触装置和至少一个半导体元件 ，全部集成到半导体衬底上。 用于基极的连接由电绝缘的导电多晶半导体层形成。 制造该器件的方法包括在用于形成基极的半导体衬底上的两个绝缘层之间布置导电多晶半导体层的步骤。

    Micromechanical component and method for producing same
    97.
    发明授权
    Micromechanical component and method for producing same 有权
    微机械部件及其制造方法

    公开(公告)号：US07312553B2

    公开(公告)日：2007-12-25

    申请号：US10492896

    申请日：2002-09-05

    申请人： Franz Laermer

    发明人： Franz Laermer

    IPC分类号： H01L41/08

    CPC分类号： G01C19/5712 ,  B81B3/0086 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/033 ,  B81C1/00801 ,  B81C2201/0104 ,  B81C2201/016

    摘要： A micromechanical component and a method for producing the component are provided. The micromechanical component includes a substrate and a micromechanical functional layer of a first material provided over the substrate. The functional layer has a first and second regions, which are connected by a third region of a second material, and at least one of the regions is part of a movable structure, which is suspended over the substrate.

    摘要翻译： 提供微机械部件及其制造方法。 微机械部件包括衬底和设置在衬底上的第一材料的微机械功能层。 功能层具有通过第二材料的第三区域连接的第一和第二区域，并且至少一个区域是悬浮在基板上的可移动结构的一部分。

    Device and method for anisotropic plasma etching of a substrate, a silicon body in particular
    98.
    发明授权
    Device and method for anisotropic plasma etching of a substrate, a silicon body in particular 有权
    特别是用于各向异性等离子体蚀刻衬底，硅体的装置和方法

    公开(公告)号：US07285228B2

    公开(公告)日：2007-10-23

    申请号：US10506457

    申请日：2003-03-05

    申请人： Franz Laermer ,  Klaus Breitschwerdt ,  Bernd Kutsch

    发明人： Franz Laermer ,  Klaus Breitschwerdt ,  Bernd Kutsch

    IPC分类号： C23F1/00

    CPC分类号： H01L21/67069

    摘要： A method and device for implementing the method for anisotropically plasma etching a substrate (e.g., silicon body). The device has a chamber and plasma source for generating a high-frequency electromagnetic alternating field and a reaction region for generating a plasma having reactive species, within the chamber, that is generated by the action of the alternating field on etching gas and passivation gas introduced at the same time but spatially separated from it. An arrangement defines at least one first zone acted on by the etching gas and at least one second zone acted on by the passivation gas in the reaction region. The device has a mixing region downstream of the reaction region in which the reactive species generated from the etching gas in the first zone and the reactive species generated from the passivation gas in the second zone are blended before they act on the substrate.

    摘要翻译： 一种用于实现用于各向异性等离子体蚀刻衬底（例如硅体）的方法的方法和装置。 该装置具有用于产生高频电磁交变场的室和等离子体源，以及用于产生等离子体的反应区域，所述反应区域在室内产生，其通过蚀刻气体和钝化气体引入的交变场的作用而产生 同时又与之空间分离。 排列限定了至少一个由蚀刻气体起作用的第一区域和由反应区域中的钝化气体作用的至少一个第二区域。 该装置具有在反应区域下游的混合区域，其中在第一区域内从蚀刻气体产生的反应物质和由第二区域中的钝化气体产生的反应物质在它们作用于基底之前被共混。

    Device and method for etching a substrate by using an inductively coupled plasma
    99.
    发明授权
    Device and method for etching a substrate by using an inductively coupled plasma 有权

    公开(公告)号：US07094706B2

    公开(公告)日：2006-08-22

    申请号：US10763010

    申请日：2004-01-21

    申请人： Klaus Breitschwerdt ,  Volker Becker ,  Franz Laermer ,  Andrea Schilp

    发明人： Klaus Breitschwerdt ,  Volker Becker ,  Franz Laermer ,  Andrea Schilp

    IPC分类号： H01L21/302

    CPC分类号： H01J37/321 ,  H01J37/3266 ,  H01L21/3065

    摘要： A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles is generated by the action of a high-frequency electromagnetic alternating field on a reactive gas in a reactor. In addition, a static or time-variable magnetic field is generated between the substrate and the ICP source, for which purpose at least two magnetic field coils arranged one above the other are provided. The direction of the resulting magnetic field is also approximately parallel to the direction defined by the tie line connecting the substrate and the inductively coupled plasma. Finally, a first component magnetic field is generated with a first magnetic field coil, and a second component magnetic field which is equally strong at an equivalent site is generated with a second magnetic field coil, the two component magnetic fields being oriented in opposite directions.

    Device and method for determining the lateral undercut of a structured surface layer
    100.
    发明授权
    Device and method for determining the lateral undercut of a structured surface layer 失效
    用于确定结构化表面层的横向底切的装置和方法

    公开(公告)号：US06911348B1

    公开(公告)日：2005-06-28

    申请号：US09674984

    申请日：2000-03-13

    申请人： Volker Becker ,  Franz Laermer ,  Andrea Schilp

    发明人： Volker Becker ,  Franz Laermer ,  Andrea Schilp

    IPC分类号： B81C99/00 ,  H01L21/02 ,  H01L21/66 ,  H01L21/00

    CPC分类号： H01L28/10 ,  B81C99/004 ,  H01L22/12

    摘要： A device and a method for determining the extent of an at least locally lateral undercut of a structured surface layer on a sacrificial layer. The structured surface layer for this purpose locally has at least one passive electronic component, using which a physical measured quantity can be determined, which is proportional to the extent of the lateral undercut. The method for generating this device proposes, initially on the structured surface layer in a first etching method, to provide the surface layer at least locally with a structuring having trenches and, in a second etching method, proceeding from the trenches, to undertake at least locally a lateral undercut of the structured surface layer. In this context, in the first etching method on the surface layer, locally at least one passive electronic component is additionally delineated out, which in response to a subsequent undercutting of the surface layer is also undercut. The physical measured quantity is determined without contact, preferably by sending an electromagnetic emission into the passive component.

    摘要翻译： 用于确定牺牲层上的结构化表面层的至少局部侧向底切的程度的装置和方法。 用于此目的的结构化表面层在本地具有至少一个无源电子部件，利用该被动电子部件可以确定与外侧底切的程度成比例的物理测量量。 用于产生该装置的方法首先在第一蚀刻方法中在结构化表面层上提出至少局部地提供具有沟槽的结构的表面层，并且以第二蚀刻方法从沟槽进行至少承受 局部地是结构化表面层的横向底切。 在本文中，在表面层上的第一蚀刻方法中，局部地附加地描绘了至少一个无源电子部件，其响应于表面层的随后的底切也被切削。 物理测量的数量是在不接触的情况下确定的，优选地通过向无源部件发送电磁辐射。