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488 条记录 (耗时 0.036 秒)

    Process for producing alkaline treated cellulosic fibers
    92.
    发明授权
    Process for producing alkaline treated cellulosic fibers 有权
    生产碱处理纤维素纤维的方法

    公开(公告)号：US06896810B2

    公开(公告)日：2005-05-24

    申请号：US10211043

    申请日：2002-08-02

    申请人： Omar F. Ali ,  John T. Cenicola ,  Jian Li ,  Jay D. Taylor

    发明人： Omar F. Ali ,  John T. Cenicola ,  Jian Li ,  Jay D. Taylor

    IPC分类号： C08B1/00 ,  C08B1/08 ,  C08B1/10 ,  C08B1/12 ,  D21C9/00 ,  B01D61/00

    CPC分类号： C08B1/00 ,  C08B1/08 ,  C08B1/10 ,  C08B1/12 ,  D21C9/004

    摘要： Systems and methods by which to subject cellulosic fibers to alkaline treatment are provided. The systems and methods of the invention include equipment, such as nanofiltration units and slurry concentrators, which result in a lowered overall consumption of alkaline solution during alkaline treatment. The systems and methods of the invention further allow the components of hemicaustic streams produced by such alkaline treatments to be utilized in higher value end uses.

    摘要翻译： 提供了使纤维素纤维进行碱处理的系统和方法。 本发明的系统和方法包括诸如纳米过滤单元和浆料浓缩器的设备，其在碱处理期间导致碱溶液的总消耗量降低。 本发明的系统和方法还允许通过这种碱处理产生的半透明气流的组分用于更高价值的最终用途。

    Multi-frequency microwave-induced thermoacoustic imaging of biological tissue
    93.
    发明申请
    Multi-frequency microwave-induced thermoacoustic imaging of biological tissue 失效
    多频微波诱导的热声成像生物组织

    公开(公告)号：US20050107692A1

    公开(公告)日：2005-05-19

    申请号：US10714795

    申请日：2003-11-17

    申请人： Jian Li ,  Gang Wang

    发明人： Jian Li ,  Gang Wang

    IPC分类号： A61B5/05

    CPC分类号： A61B5/4312 ,  A61B5/0095 ,  A61B5/05 ,  A61B5/0507

    摘要： A method and system for examining biological tissue includes the steps of radiating a tissue region with a plurality of microwave radiation pulses. The microwave pulses are swept across a range of microwave frequencies. In response to the swept frequency microwave pulses, the tissue region emits a plurality of thermoacoustic signals. At least one image of the tissue region is formed from the plurality of thermoacoustic signals. The signals can be ultrawideband signals.

    摘要翻译： 用于检查生物组织的方法和系统包括以多个微波辐射脉冲辐射组织区域的步骤。 微波脉冲扫过一定范围的微波频率。 响应于扫频频率微波脉冲，组织区域发射多个热声信号。 由多个热声信号形成组织区域的至少一个图像。 信号可以是超宽带信号。

    SELF-ALIGNED LATERAL HETEROJUNCTION BIPOLAR TRANSISTOR
    94.
    发明申请
    SELF-ALIGNED LATERAL HETEROJUNCTION BIPOLAR TRANSISTOR 有权
    自对准侧向异相双极晶体管

    公开(公告)号：US20050101096A1

    公开(公告)日：2005-05-12

    申请号：US10703284

    申请日：2003-11-06

    申请人： Jian Li ,  Lap Chan ,  Purakh Verma ,  Jia Zheng ,  Shao-Fu Chu

    发明人： Jian Li ,  Lap Chan ,  Purakh Verma ,  Jia Zheng ,  Shao-Fu Chu

    IPC分类号： H01L21/331 ,  H01L29/737 ,  H01L21/8222

    CPC分类号： H01L29/66242 ,  H01L29/737

    摘要： A method for manufacturing a lateral heterojunction bipolar transistor (HBT) is provided comprising a semiconductor substrate having a first insulating layer over the semiconductor substrate. A base trench is formed in a first silicon layer over the first insulating layer to form a collector layer over an exposed portion of the semiconductor substrate and an emitter layer over the first insulating layer. A semiconductive layer is formed on the sidewalls of the base trench to form a collector structure in contact with the collector layer and an emitter structure in contact with the emitter layer. A base structure is formed in the base trench. A plurality of connections is formed through an interlevel dielectric layer to the collector layer, the emitter layer, and the base structure. The base structure preferably is a compound semiconductive material of silicon and at least one of silicon-germanium, silicon-germanium-carbon, and combinations thereof.

    摘要翻译： 提供一种用于制造横向异质结双极晶体管（HBT）的方法，包括半导体衬底上的第一绝缘层的半导体衬底。 基底沟槽形成在第一绝缘层上的第一硅层中，以在半导体衬底的暴露部分和第一绝缘层上的发射极层之上形成集电极层。 半导体层形成在基底沟槽的侧壁上，以形成与集电极层接触的集电极结构和与发射极层接触的发射极结构。 基底结构形成在基底沟槽中。 通过层间电介质层到集电极层，发射极层和基底结构形成多个连接。 基底结构优选是硅的化合物半导体材料和硅 - 锗，硅 - 锗 - 碳及其组合中的至少一种。

    Multimode output stage converting differential to single-ended signals using current-mode input signals
    96.
    发明授权
    Multimode output stage converting differential to single-ended signals using current-mode input signals 有权
    多模输出级使用电流模式输入信号将差分转换为单端信号

    公开(公告)号：US06806771B1

    公开(公告)日：2004-10-19

    申请号：US10159681

    申请日：2002-05-31

    申请人： Paul Hildebrant ,  Jian Li ,  Hans W. Klein

    发明人： Paul Hildebrant ,  Jian Li ,  Hans W. Klein

    IPC分类号： H03G310

    CPC分类号： H03F3/45475 ,  H03F1/3211 ,  H03F3/3022 ,  H03F3/45183 ,  H03F3/45748 ,  H03F3/45973 ,  H03F2200/261 ,  H03F2200/78 ,  H03F2203/45458 ,  H03F2203/45526 ,  H03G3/001

    摘要： An output block for an in-system programmable analog integrated circuit. The output block features an output amplifier that accepts a differential current-mode input signal and provides a single-ended output voltage. The output amplifier is also selectably operable as a linear amplifier, an integrator or a comparator. The output block also includes a common-mode feedback circuit (CMFB), an analog trim circuit (OATRM), a CLAMP circuit, and an offset calibration circuit (CLDAC), all coupled to the differential input of the output amplifier. The CMFB exhibits bandwidth comparable to that of the output amplifier and a drive capability that enables the differential-input to single-ended output conversion. The CLAMP is connected to the differential input in the comparator mode in order to avoid slow recovery from an overdrive condition. The OATRM forces a difference current into the differential input that compensates for a (gain independent) offset voltage that results from various mismatches. The CLDAC uses a digital-to-analog converter (DAC) to perform offset calibration at the differential input of the output amplifier. In addition, the output block is configured to be operational in a number of user-selectable modes, including, in one embodiment, one or more of: a linear (NORM) mode, a comparator (COMP) mode, and an integrator (INT) mode. An amplifier in the output block is variously reconfigured to achieve the selected mode of operation. Also, the output block accommodates an autocalibration (CAL) technique by clamping the single-ended output stage and balancing, through operation of the CLDAC, signals at an input node and at an interstage node of the amplifier.

    摘要翻译： 用于在系统可编程模拟集成电路的输出块。 输出模块具有输出放大器，可接受差分电流模式输入信号，并提供单端输出电压。 输出放大器也可选择可操作为线性放大器，积分器或比较器。 输出块还包括共模反馈电路（CMFB），模拟微调电路（OATRM），钳位电路和偏移校准电路（CLDAC），全部耦合到输出放大器的差分输入。 CMFB具有与输出放大器的带宽相当的带宽，以及使差分输入能够实现单端输出转换的驱动能力。 CLAMP在比较器模式下连接到差分输入，以避免从过驱动条件恢复缓慢。 OATRM将差分电流强制为差分输入，补偿由各种不匹配产生的（增益无关）偏移电压。 CLDAC使用数模转换器（DAC）在输出放大器的差分输入端执行偏移校准。 此外，输出块被配置为可在多个用户可选模式下操作，包括在一个实施例中，一个或多个：线性（NORM）模式，比较器（COMP）模式和积分器（INT ）模式。 输出块中的放大器被不同地重新配置以实现所选择的操作模式。 此外，输出块通过钳位单端输出级并通过CLDAC的操作在放大器的输入节点和级间节点处的信号进行平衡来适应自动校准（CAL）技术。

    Reliable adhesion layer interface structure for polymer memory electrode and method of making same
    97.
    发明授权
    Reliable adhesion layer interface structure for polymer memory electrode and method of making same 失效
    聚合物记忆电极的可靠粘附层界面结构及其制备方法

    公开(公告)号：US06798003B2

    公开(公告)日：2004-09-28

    申请号：US09909375

    申请日：2001-07-20

    申请人： Jian Li ,  Xiao-Chun Mu

    发明人： Jian Li ,  Xiao-Chun Mu

    IPC分类号： H01L4700

    CPC分类号： H01L27/11507 ,  H01L27/11502 ,  Y10S438/939

    摘要： A polymer memory device includes two organic adhesion layers that facilitate an integral package comprising a lower and an upper electrode and the ferroelectric polymer memory structure. The ferroelectric polymer memory structure includes crystalline ferroelectric polymer layers such as single and co-polymer compositions. The structure includes spin-on and/or Langmuir-Blodgett deposited compositions. A memory system allows the polymer memory device to interface with various existing hosts.

    摘要翻译： 聚合物存储器件包括两个有机粘合层，其有助于包含下电极和上电极以及铁电聚合物存储器结构的整体封装。 铁电聚合物记忆结构包括结晶铁电聚合物层，例如单一和共聚物组合物。 该结构包括旋转和/或Langmuir-Blodgett沉积的组合物。存储器系统允许聚合物存储器件与各种现有主机接口。

    Stepped structure for a multi-rank, stacked polymer memory device and method of making same
    100.
    发明授权
    Stepped structure for a multi-rank, stacked polymer memory device and method of making same 失效
    多级堆叠聚合物存储器件的阶梯结构及其制造方法

    公开(公告)号：US06624457B2

    公开(公告)日：2003-09-23

    申请号：US09909670

    申请日：2001-07-20

    申请人： Jian Li ,  Xiao-Chun Mu

    发明人： Jian Li ,  Xiao-Chun Mu

    IPC分类号： H01L31119

    CPC分类号： G11C11/22 ,  B82Y10/00 ,  H01L27/285

    摘要： The present invention relates to a ferroelectric polymer storage device including at least two stacked ferroelectric polymer memory structures that are arrayed next to at least two respective stacked topologies that are a pre-fabricated silicon substrate cavity that includes interlayer dielectric layers and via structures.

    摘要翻译： 铁电聚合物储存装置技术领域本发明涉及一种铁电聚合物储存装置，其包括至少两个层叠的铁电聚合物存储结构，它们被排列在至少两个相应堆叠的拓扑结构之上，该拓扑结构是包括层间电介质层和通孔结构的预制硅衬底腔。