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116 条记录 (耗时 0.046 秒)

    Semiconductor device having super junction structure
    92.
    发明授权
    Semiconductor device having super junction structure 有权
    具有超结结构的半导体器件

    公开(公告)号：US07633123B2

    公开(公告)日：2009-12-15

    申请号：US11645792

    申请日：2006-12-27

    申请人： Shoichi Yamauchi ,  Hitoshi Yamaguchi ,  Yoshiyuki Hattori ,  Kyoko Okada

    发明人： Shoichi Yamauchi ,  Hitoshi Yamaguchi ,  Yoshiyuki Hattori ,  Kyoko Okada

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/36

    摘要： A semiconductor device includes: two main electrodes; multiple first regions; and multiple second regions. The first region having a first impurity concentration and a first width and the second region having a second impurity concentration and a second width are alternately repeated. A product of the first impurity concentration and the first width is equal to a product of the second impurity concentration and the second width. The first width is equal to or smaller than 4.5 μm. The first impurity concentration is lower than a predetermined concentration satisfying a RESURF condition. A ratio between on-state resistances of the device at 27° C. and at 150° C. is smaller than 1.8.

    摘要翻译： 半导体器件包括：两个主电极; 多个第一区域; 和多个第二区域。 交替重复具有第一杂质浓度和第一宽度的第一区域和具有第二杂质浓度和第二宽度的第二区域。 第一杂质浓度和第一宽度的乘积等于第二杂质浓度与第二宽度的乘积。 第一宽度等于或小于4.5μm。 第一杂质浓度低于满足RESURF条件的预定浓度。 器件在27°C和150°C的导通电阻之间的比值小于1.8。

    Method for manufacturing semiconductor device having super junction construction
    93.
    发明授权
    Method for manufacturing semiconductor device having super junction construction 有权
    具有超结构构造的半导体器件的制造方法

    公开(公告)号：US07364971B2

    公开(公告)日：2008-04-29

    申请号：US11356984

    申请日：2006-02-21

    申请人： Hitoshi Yamaguchi ,  Mikimasa Suzuki ,  Yoshiyuki Hattori

    发明人： Hitoshi Yamaguchi ,  Mikimasa Suzuki ,  Yoshiyuki Hattori

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/1095

    摘要： A semiconductor device includes a body region, a drift region having a first part and a second part, and a trench gate electrode. The body region is disposed on the drift region. The first and second parts extend in an extending direction so that the second part is adjacent to the first part. The trench gate electrode penetrates the body region and reaches the drift region so that the trench gate electrode faces the body region and the drift region through an insulation layer. The trench gate electrode extends in a direction crossing with the extending direction of the first and second parts. The first part includes a portion near the trench gate electrode, which has an impurity concentration equal to or lower than that of the body region.

    摘要翻译： 半导体器件包括主体区域，具有第一部分和第二部分的漂移区域以及沟槽栅电极。 身体区域设置在漂移区域上。 第一和第二部分沿延伸方向延伸，使得第二部分与第一部分相邻。 沟槽栅电极穿透体区并到达漂移区，使得沟槽栅电极通过绝缘层面向体区和漂移区。 沟槽栅电极沿与第一和第二部分的延伸方向交叉的方向延伸。 第一部分包括沟槽栅电极附近的部分，其杂质浓度等于或低于体区的杂质浓度。

    Semiconductor device having super junction structure and method for manufacturing the same
    94.
    发明授权
    Semiconductor device having super junction structure and method for manufacturing the same 有权
    具有超结结构的半导体器件及其制造方法

    公开(公告)号：US07342422B2

    公开(公告)日：2008-03-11

    申请号：US11472547

    申请日：2006-06-22

    申请人： Shoichi Yamauchi ,  Tomoatsu Makino ,  Makoto Kuwahara ,  Yoshiyuki Hattori

    发明人： Shoichi Yamauchi ,  Tomoatsu Makino ,  Makoto Kuwahara ,  Yoshiyuki Hattori

    IPC分类号： H01L25/00 ,  H03K19/00

    CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41741 ,  H01L29/66734 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes: a cell region; a terminal region; a lower semiconductor layer; a intermediate semiconductor layer on the lower semiconductor layer including a super junction structure; a terminal upper semiconductor layer on the intermediate semiconductor layer; a terminal contact semiconductor region on a surface portion of the terminal upper semiconductor layer adjacent to the cell region; an insulation layer on the terminal upper semiconductor layer having a first part adjacent to the cell region with a small thickness and a second part adjacent to the first part with a large thickness; and a conductive layer in the cell region and a part of the terminal region, the conductive layer extending from the cell region to the part of the terminal region beyond the first part of the insulation layer.

    摘要翻译： 半导体器件包括：单元区域; 终端区域 下半导体层; 包括超级结结构的下半导体层上的中间半导体层; 中间半导体层上的端子上半导体层; 在所述端子上半导体层的与所述单元区域相邻的表面部分上的端子接触半导体区域; 端子上半导体层上的绝缘层具有邻近具有小厚度的单元区域的第一部分和与厚度较大的第一部分相邻的第二部分; 以及在所述单元区域和所述端子区域的一部分中的导电层，所述导电层从所述单元区域延伸到所述绝缘层的所述第一部分之外的所述端子区域的所述部分。

    Method of manufacturing a semiconductor device
    95.
    发明授权
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07307312B2

    公开(公告)日：2007-12-11

    申请号：US10817904

    申请日：2004-04-06

    申请人： Mikimasa Suzuki ,  Yoshiyuki Hattori ,  Kyoko Nakashima

    发明人： Mikimasa Suzuki ,  Yoshiyuki Hattori ,  Kyoko Nakashima

    IPC分类号： H01L21/8238 ,  H01L29/94

    CPC分类号： H01L29/7811 ,  H01L21/78 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/7802 ,  H01L29/7813

    摘要： A semiconductor device manufacturing method comprises forming a pn column so that the pn column is designed to have a strip form in the section of the substrate and have a repetitive pattern of a p-conduction type and an n-conduction type on the substrate surface over an area where plural semiconductor devices having the same structure are formed in a semiconductor substrate, forming residual constituent elements of the plural semiconductor devices having the same structure in areas where the repetitive patterns are located while the pn column serves as a part of the constituent element of each semiconductor device, and dicing the individual semiconductor devices into chips from the area where the plural semiconductor devices having the same structure are formed.

    摘要翻译： 半导体器件制造方法包括形成pn列，使得pn列被设计为在衬底的部分中具有条形，并且在衬底表面上具有p导电型和n导电型的重复图案， 在半导体衬底中形成具有相同结构的多个半导体器件的区域，在pn列用作构成元件的一部分的同时，在重复图案所在的区域中形成具有相同结构的多个半导体器件的残留构成元件 并且从形成有相同结构的多个半导体器件的区域将各个半导体器件切割成芯片。

    Impact sensor
    98.
    发明申请
    Impact sensor 失效
    冲击传感器

    公开(公告)号：US20050092061A1

    公开(公告)日：2005-05-05

    申请号：US10972443

    申请日：2004-10-26

    申请人： Tetsuya Takafuji ,  Yoshiyuki Hattori

    发明人： Tetsuya Takafuji ,  Yoshiyuki Hattori

    IPC分类号： G01L1/20 ,  B60K28/10 ,  B60R21/01 ,  B60R21/0136 ,  B60R21/16 ,  G01L5/00 ,  G01N3/00 ,  G01P15/08 ,  H01H13/18

    CPC分类号： B60R21/0136 ,  B60R21/34

    摘要： An impact sensor includes the first and the second electrodes arranged a predetermined distance away from each other in a tube insulator. The impact sensor is arranged at a front of a vehicle such that the first and the second electrodes opposed to each other in the front-to-rear direction of the vehicle. The first and the second electrodes include cable conductors sheathed with elastically deformable conductive members, respectively. The first and the second electrodes are apart from each other when no impact is applied to the impact sensor. When a collision occurs and the impact is applied to the impact sensor, a contact area between the conductive members increases and a resistance between the first and the second electrodes continuously decreases.

    摘要翻译： 冲击传感器包括在管绝缘体中彼此远离布置预定距离的第一和第二电极。 冲击传感器布置在车辆的前部，使得第一和第二电极在车辆的前后方向上彼此相对。 第一和第二电极分别包括具有可弹性变形的导电构件的电缆导体。 当冲击传感器没有受到冲击时，第一和第二电极彼此分开。 当碰撞发生并且冲击被施加到冲击传感器时，导电构件之间的接触面积增加，并且第一和第二电极之间的电阻持续减小。

    Solenoid valve
    99.
    发明授权
    Solenoid valve 失效
    电磁阀

    公开(公告)号：US4723575A

    公开(公告)日：1988-02-09

    申请号：US014519

    申请日：1987-02-13

    申请人： Hidenobu Kazita ,  Toshiharu Naito ,  Yoshiyuki Hattori ,  Yoshihisa Nomura

    发明人： Hidenobu Kazita ,  Toshiharu Naito ,  Yoshiyuki Hattori ,  Yoshihisa Nomura

    IPC分类号： F16K31/06 ,  B60T8/26 ,  B60T8/36 ,  B60T13/68

    CPC分类号： B60T8/445 ,  B60T13/686 ,  B60T8/266 ,  B60T8/364 ,  Y10T137/87724 ,  Y10T137/87772 ,  Y10T137/87845 ,  Y10T137/87877

    摘要： First and second outlet ports are connected to an inlet port. A first valve member selectively blocks and unblocks the first outlet port. A second valve member selectively blocks and unblocks the second outlet port. A first device urges the first valve member. A second device urges the second valve member. A movable member disposed between the first and second valve members allows a force of the first urging device to travel to the second valve member. The movable member can be driven by a solenoid winding. When the solenoid winding is deenergized, the first valve member is moved to its open position by the first urging device and the second valve member is moved against a force of the second urging device to its open position by the first urging device. When the solenoid winding is energized, the first valve member is moved against the force of the first urging device to its closed position by the movable member and the second valve member is moved to its closed position by the second urging device.

    摘要翻译： 第一和第二出口连接到入口。 第一阀构件选择性地阻挡和解锁第一出口。 第二阀构件选择性地阻止和解锁第二出口。 第一装置促使第一阀构件。 第二装置促使第二阀构件。 设置在第一和第二阀构件之间的可动构件允许第一推动装置的力行进到第二阀构件。 可动构件可由电磁线圈驱动。 当螺线管绕组断电时，第一阀构件通过第一推动装置移动到其打开位置，并且第二阀构件通过第一推动装置抵抗第二施力装置的力而移动到其打开位置。 当电磁线圈绕组通电时，第一阀构件被第一推动装置的力抵抗可动构件的关闭位置移动，第二阀构件通过第二推动装置移动到其关闭位置。