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108 条记录 (耗时 0.029 秒)

    Power semiconductor device
    92.
    发明授权
    Power semiconductor device 有权
    功率半导体器件

    公开(公告)号：US07268390B2

    公开(公告)日：2007-09-11

    申请号：US11102851

    申请日：2005-04-11

    申请人： Tsuneo Ogura ,  Tomoki Inoue ,  Hideaki Ninomiya ,  Koichi Sugiyama

    发明人： Tsuneo Ogura ,  Tomoki Inoue ,  Hideaki Ninomiya ,  Koichi Sugiyama

    IPC分类号： H01L29/76

    CPC分类号： H01L29/1095 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/7394 ,  H01L29/7397

    摘要： A semiconductor device includes a base layer of a first conductivity type, a barrier layer of a first conductivity type formed on the base layer, a trench formed from the surface of the barrier layer to such a depth as to reach a region in the vicinity of an interface between the barrier layer and the base layer, a gate electrode formed in the trench via a gate insulating film, a contact layer of a second conductivity type selectively formed in a surface portion of the barrier layer, a source layer of the first conductivity type selectively formed in the surface portion of the barrier layer so as to contact the contact layer and a side wall of the gate insulating film in the trench, and a first main electrode formed so as to contact the contact layer and the source layer.

    摘要翻译： 半导体器件包括第一导电类型的基底层，形成在基底层上的第一导电类型的阻挡层，从阻挡层的表面形成的沟槽到达达到 阻挡层和基底层之间的界面，通过栅极绝缘膜形成在沟槽中的栅极电极，选择性地形成在阻挡层的表面部分中的第二导电类型的接触层，第一导电性的源极层 形成在所述阻挡层的表面部分中以与所述沟槽中的所述接触层和所述栅极绝缘膜的侧壁接触的第一主电极以及与所述接触层和所述源极层接触的第一主电极。

    Video apparatus, video output control method, and reproduction control method
    97.
    发明申请
    Video apparatus, video output control method, and reproduction control method 失效
    视频装置，视频输出控制方法和再现控制方法

    公开(公告)号：US20060082652A1

    公开(公告)日：2006-04-20

    申请号：US11248909

    申请日：2005-10-12

    申请人： Koichi Sugiyama

    发明人： Koichi Sugiyama

    IPC分类号： H04N5/225

    CPC分类号： H04N5/765

    摘要： A video apparatus is disclosed. The video apparatus has signal control means for outputting an image signal in a plurality of formats, interface means for connecting the video apparatus to a computer, and interface control means for controlling so as to transmit the image signal to the computer by using the interface means. In the case where the video apparatus has been connected to the computer through the interface means, when the format of the image signal is switched, the interface control means controls the interface means in such a manner that the connection to the computer is disconnected without changing a physical connecting state. After the elapse of a predetermined period, the video apparatus is connected to the computer again without changing the physical connecting state.

    摘要翻译： 公开了一种视频设备。 视频装置具有用于输出多种格式的图像信号的信号控制装置，用于将视频装置连接到计算机的接口装置和用于控制以便通过使用接口装置将图像信号发送到计算机的接口控制装置 。 在视频装置已经通过接口装置连接到计算机的情况下，当图像信号的格式被切换时，接口控制装置以这样的方式控制接口装置，使得与计算机的连接断开而不改变 物理连接状态。 在经过预定时间段之后，视频设备再次连接到计算机而不改变物理连接状态。

    Insulated gate semiconductor device and method of manufacturing insulated gate semiconductor device
    98.
    发明申请
    Insulated gate semiconductor device and method of manufacturing insulated gate semiconductor device 有权
    绝缘栅半导体器件及制造绝缘栅半导体器件的方法

    公开(公告)号：US20060049456A1

    公开(公告)日：2006-03-09

    申请号：US11216014

    申请日：2005-09-01

    申请人： Koichi Sugiyama

    发明人： Koichi Sugiyama

    IPC分类号： H01L21/336 ,  H01L29/94

    CPC分类号： H01L29/66348 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/407 ,  H01L29/7395 ,  H01L29/7397

    摘要： Disclosed is an insulated gate semiconductor device comprising: a first region having a gate electrode region and a first insulating film region surrounding the gate electrode region; a semiconductor region which includes a channel forming region and is disposed to oppose the gate electrode region with the first insulating film region between them; and a second region which has a conductor region buried in a semiconductor region not including the channel forming region disposed to oppose the gate electrode region with the first insulating film region between them, and has a second insulating film region which separates the conductor region from the semiconductor region.

    摘要翻译： 公开了一种绝缘栅极半导体器件，包括：具有栅电极区域和围绕栅电极区域的第一绝缘膜区域的第一区域; 半导体区域，其包括沟道形成区域，并且设置成与栅电极区域之间具有第一绝缘膜区域相对; 以及第二区域，其具有埋设在不包括沟道形成区域的半导体区域中的导体区域，所述沟道形成区域设置成与栅电极区域之间具有第一绝缘膜区域相对，并且具有将导体区域与第二绝缘膜区域分离的第二绝缘膜区域 半导体区域。

    Snubber circuit
    99.
    发明申请
    Snubber circuit 有权
    缓冲电路

    公开(公告)号：US20060018074A1

    公开(公告)日：2006-01-26

    申请号：US11185744

    申请日：2005-07-21

    申请人： Tomoki Inoue ,  Koichi Sugiyama

    发明人： Tomoki Inoue ,  Koichi Sugiyama

    IPC分类号： H02H9/06 ,  H02H1/00

    CPC分类号： H02H9/041

    摘要： A snubber circuit has a voltage detection circuit which detects that a voltage between first and second terminals exceeds a predetermined voltage, a protection circuit which performs control to prevent an overvoltage between the first and second terminals when the voltage detection circuit detects that the voltage between the first and second terminals exceeds the predetermined voltage, and a voltage control circuit which bypasses a portion of a main current flowing between the first and second terminals to the protection circuit when the voltage detection circuit detects that the voltage between the first and second terminals exceeds the predetermined voltage.

    摘要翻译： 缓冲电路具有检测第一和第二端子之间的电压超过预定电压的电压检测电路，当电压检测电路检测到第一和第二端子之间的电压时，执行控制以防止第一和第二端子之间的过电压的保护电路 第一和第二端子超过预定电压，以及电压控制电路，当电压检测电路检测到第一和第二端子之间的电压超过第一端子和第二端子之间的电压时，旁路第一和第二端子之间流过的主电流的一部分到保护电路 预定电压。