公开(公告)号：US07273660B2

公开(公告)日：2007-09-25

申请号：US10228404

申请日：2002-08-26

申请人： Cem Basceri ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Gurtej S. Sandhu

IPC分类号： B32B9/00

CPC分类号： H01L21/0228 ,  C23C16/029 ,  C23C16/18 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/02183 ,  H01L21/28562 ,  H01L21/31604 ,  H01L21/31683 ,  H01L28/40 ,  H01L28/60 ,  Y10T29/417 ,  Y10T428/24917 ,  Y10T428/24926

摘要： An interface forming method includes forming a first layer containing a first chemical element and chemisorbing on the first layer an interface layer containing at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element. A second layer comprising the second chemical element can be formed on the interface layer. The first layer might not substantially contain the second chemical element, the second layer might not substantially contain the first chemical element, or both. An apparatus can include a first layer containing a first chemical element, an interface layer chemisorbed on the first layer, and a second layer containing a second element on the interface layer. The interface layer can contain at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element.

摘要翻译： 界面形成方法包括在第一层上形成含有第一化学元素和化学吸附的第一层，所述界面层含有与第一化学元素不同的第二化学元素混合的第一化学元素的至少一个单层。 包含第二化学元素的第二层可以形成在界面层上。 第一层可能基本上不包含第二化学元素，第二层可能基本上不含有第一化学元素，或两者都不包含。 装置可以包括含有第一化学元素的第一层，在第一层上化学吸附的界面层和在界面层上含有第二元素的第二层。 界面层可以包含与第一化学元素不同的第二化学元素混合的第一化学元素的至少一个单层。

公开(公告)号：US20070207588A1

公开(公告)日：2007-09-06

申请号：US11796773

申请日：2007-04-30

申请人： Cem Basceri ,  Vishnu Agarwal ,  Dan Gealy

发明人： Cem Basceri ,  Vishnu Agarwal ,  Dan Gealy

IPC分类号： H01L21/328 ,  H01L21/20

CPC分类号： H01L21/02183 ,  H01L21/02356 ,  H01L21/31637 ,  H01L27/10852 ,  H01L27/10855 ,  H01L28/65 ,  H01L28/91

摘要： Systems, devices, structures, and methods are described that inhibit dielectric degradation at high temperatures. An enhanced capacitor is discussed. The enhanced capacitor includes a first electrode, a dielectric that includes ditantalum pentaoxide, and a second electrode having a compound. The compound includes a first substance and a second substance. The second electrode includes a trace amount of the first substance. The morphology of the semiconductor structure remains stable when the trace amount of the first substance is oxidized during crystallization of the dielectric. In one embodiment, the crystalline structure of the dielectric describes substantially a (001) lattice plane.

公开(公告)号：US07217630B2

公开(公告)日：2007-05-15

申请号：US10928547

申请日：2004-08-26

申请人： Cem Basceri ,  F. Daniel Gealy ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  F. Daniel Gealy ,  Gurtej S. Sandhu

IPC分类号： H01L21/20

CPC分类号： H01G4/33 ,  H01G4/1209 ,  H01G4/1272 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90 ,  H01L28/91 ,  H01L29/7833

摘要： The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and orientation over the substrate. Subsequently, second reaction conditions are utilized to grow second hafnium-containing material over the seed material. The second hafnium-containing material is in a crystalline phase and/or orientation different from the crystalline phase and orientation of the hafnium-containing seed material. The second hafnium-containing material can be, for example, in an amorphous phase. The seed material is then utilized to induce a desired crystalline phase and orientation in the second hafnium-containing material. The invention also includes capacitor constructions utilizing hafnium-containing materials, and circuit assemblies comprising the capacitor constructions.

摘要翻译： 本发明包括形成含铪材料的方法，例如氧化铪。 在一个方面，提供了一种半导体衬底，并且利用第一反应条件来形成在衬底上所需的结晶相和取向的含铪种子材料。 随后，利用第二反应条件在种子材料上生长第二含铪材料。 第二含铪材料处于与含铪种子材料的结晶相和取向不同的结晶相和/或取向。 第二含铪材料可以是例如非晶相。 然后将种子材料用于在第二含铪材料中诱导所需的结晶相和取向。 本发明还包括使用含铪材料的电容器结构和包括电容器结构的电路组件。

公开(公告)号：US07208198B2

公开(公告)日：2007-04-24

申请号：US10876703

申请日：2004-06-28

申请人： Cem Basceri ,  Nancy Alzola

发明人： Cem Basceri ,  Nancy Alzola

IPC分类号： C23C16/00 ,  C23C16/06

CPC分类号： C23C16/45523 ,  C23C16/409

摘要： The invention includes a chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer having a varied concentration of barium and strontium, and/or titanium, within the layer. A substrate is positioned within a chemical vapor deposition reactor. Barium and strontium are provided within the reactor by flowing at least one metal organic precursor to the reactor. Titanium is provided within the reactor. One or more oxidizers are flowed to the reactor. In one aspect, conditions are provided within the reactor to be effective to deposit a barium strontium titanate comprising dielectric layer on the substrate from the reactants.

摘要翻译： 本发明包括在该层内形成包含钡和锶和/或钛浓度不同的介电层的钛酸钡锶的化学气相沉积方法。 衬底位于化学气相沉积反应器内。 通过使至少一种金属有机前体流入反应器，在反应器内提供钡和锶。 在反应器内提供钛。 一个或多个氧化剂流入反应器。 在一个方面，在反应器内提供了有效的方法，从反应物沉积包含介电层的钡钡锶在衬底上。

公开(公告)号：US20070069270A1

公开(公告)日：2007-03-29

申请号：US11398498

申请日：2006-04-04

申请人： Cem Basceri ,  Howard Rhodes ,  Gurtej Sandhu ,  F. Gealy ,  Thomas Graettinger

发明人： Cem Basceri ,  Howard Rhodes ,  Gurtej Sandhu ,  F. Gealy ,  Thomas Graettinger

IPC分类号： H01L29/94

CPC分类号： H01L28/65 ,  H01L21/31637 ,  H01L21/31691 ,  H01L23/5222 ,  H01L27/10852 ,  H01L28/56 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further comprises a first insulating layer deposited over the first conducting layer in a flush manner. The first insulating layer comprises a structure having a plurality of oxygen cites and a plurality of oxygen atoms that partially fill the oxygen cites, wherein the unfilled oxygen cites define a concentration of oxygen vacancies. The CIC sandwich further comprises a second conducting layer deposited over the first insulating layer in a strongly oxidizing ambient so as to reduce the concentration of oxygen vacancies in the first insulating layer, so as to provide an oxygen-rich interface layer between the first insulating layer and the second conducting layer, and so as to trap a plurality of oxygen atoms within the second conducting layer. The oxygen-rich interface layer and second conducting layer act as oxygen vacancy sinks for absorbing migrating oxygen vacancies that originate from the first insulating layer to thereby reduce the concentration of oxygen vacancies in the first insulating layer and to thereby reduce the buildup of oxygen vacancies at the interface layer. Thus, the first insulating layer provides an increased dielectric constant and an increased resistance to current flowing therethrough so as to increase the capacitance of the CIC sandwich and so as to reduce leakage currents flowing through the CIC sandwich.

摘要翻译： 一种改进的电荷存储装置及其提供方法，电荷存储装置包括导体 - 绝缘体导体（CIC）三明治。 CIC夹层包括沉积在半导体集成电路上的第一导电层。 CIC夹层还包括以齐平方式沉积在第一导电层上的第一绝缘层。 第一绝缘层包括具有多个氧化物和部分填充氧化物的多个氧原子的结构，其中未填充的氧气定义氧空位的浓度。 CIC夹层还包括在强氧化环境中沉积在第一绝缘层上的第二导电层，以便降低第一绝缘层中氧空位的浓度，从而在第一绝缘层之间提供富氧界面层 和第二导电层，以便在第二导电层内捕获多个氧原子。 富氧界面层和第二导电层用作氧空位吸收器，用于吸收源于第一绝缘层的迁移氧空位，从而降低第一绝缘层中氧空位的浓度，从而减少氧空位的累积 接口层。 因此，第一绝缘层提供增加的介电常数和增加的电流流过其中，从而增加CIC夹层的电容，并且减少流过CIC夹层的漏电流。

公开(公告)号：US20060292814A1

公开(公告)日：2006-12-28

申请号：US11515432

申请日：2006-08-31

申请人： Cem Basceri ,  Gurtej Sandhu

发明人： Cem Basceri ,  Gurtej Sandhu

IPC分类号： H01L21/20

CPC分类号： H01L29/66181 ,  H01L28/91

摘要： In one implementation, an opening within a capacitor electrode forming layer is formed over a substrate. A spacing layer is deposited over the capacitor electrode forming layer to within the opening over at least upper portions of sidewalls of the opening. The spacing layer is formed to be laterally thicker at an elevationally outer portion within the opening as compared to an elevationally inner portion within the opening. A spacer is formed within the opening by anisotropically etching the spacing layer. The spacer is laterally thicker at an elevationally outer portion within the opening as compared to an elevationally inner portion within the opening. After forming a first capacitor electrode layer laterally over the spacer, at least a portion of the spacer is removed and a capacitor dielectric region and a second capacitor electrode layer are formed over the first capacitor electrode layer.

公开(公告)号：US20060274477A1

公开(公告)日：2006-12-07

申请号：US11504935

申请日：2006-08-15

申请人： Cem Basceri ,  Thomas Graettinger

发明人： Cem Basceri ,  Thomas Graettinger

IPC分类号： H01G4/06

CPC分类号： H01L28/40 ,  H01G4/1209 ,  H01G4/228 ,  H01G4/33 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691 ,  H01L23/5223 ,  H01L27/10852 ,  H01L27/11502 ,  H01L28/56 ,  H01L28/75 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention includes capacitor constructions comprising a layer of aluminum oxide between a high-k dielectric material and a layer comprising titanium and nitrogen. The layer comprising titanium and nitrogen can be, for example, titanium nitride and/or boron-doped titanium nitride. The capacitor constructions can be incorporated into DRAM cells, which in turn can be incorporated into electronic systems. The invention also includes methods of forming capacitor constructions.

摘要翻译： 本发明包括在高k介电材料和包含钛和氮的层之间包含一层氧化铝的电容器结构。 包含钛和氮的层可以是例如氮化钛和/或硼掺杂的氮化钛。 电容器结构可以并入到DRAM单元中，这又可以并入到电子系统中。 本发明还包括形成电容器结构的方法。

公开(公告)号：US20060252221A1

公开(公告)日：2006-11-09

申请号：US11485593

申请日：2006-07-11

申请人： Cem Basceri ,  F. Gealy ,  Gurtej Sandhu

发明人： Cem Basceri ,  F. Gealy ,  Gurtej Sandhu

IPC分类号： H01L21/20 ,  H01L21/31 ,  H01L21/8242

CPC分类号： H01G4/33 ,  H01G4/1209 ,  H01G4/1272 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90 ,  H01L28/91 ,  H01L29/7833

摘要： The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and orientation over the substrate. Subsequently, second reaction conditions are utilized to grow second hafnium-containing material over the seed material. The second hafnium-containing material is in a crystalline phase and/or orientation different from the crystalline phase and orientation of the hafnium-containing seed material. The second hafnium-containing material can be, for example, in an amorphous phase. The seed material is then utilized to induce a desired crystalline phase and orientation in the second hafnium-containing material. The invention also includes capacitor constructions utilizing hafnium-containing materials, and circuit assemblies comprising the capacitor constructions.

公开(公告)号：US07128787B2

公开(公告)日：2006-10-31

申请号：US10956925

申请日：2004-09-30

申请人： Paul J. Castovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

发明人： Paul J. Castovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

IPC分类号： C30B25/14 ,  C30B25/16

CPC分类号： C30B25/14 ,  C23C14/0641 ,  C23C14/081 ,  C23C16/34 ,  C23C16/403 ,  C23C16/45527 ,  C23C16/45531

摘要： An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate. After forming the first monolayer, a reactive intermediate gas is flowed to the substrate within the deposition chamber. The reactive intermediate gas is capable of reaction with an intermediate reaction by-product from the first precursor flowing under conditions of the reactive intermediate gas flowing. After flowing the reactive intermediate gas, a second precursor gas is flowed to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer. Other aspects and implementations are contemplated.

摘要翻译： 原子层沉积方法包括将半导体衬底定位在原子层沉积室内。 第一前体气体流到原子层沉积室内的衬底，有效地在衬底上形成第一单层。 在形成第一单层之后，反应性中间气体流到沉积室内的衬底。 反应性中间体气体能够与在反应性中间体气体流动的条件下流动的第一前体的中间反应副产物反应。 在流动反应性中间气体之后，第二前体气体流到沉积室内的衬底，有效地在第一单层上形成第二单层。 考虑了其他方面和实现。

公开(公告)号：US07109112B2

公开(公告)日：2006-09-19

申请号：US10860939

申请日：2004-06-03

申请人： Dinesh Chopra ,  Kevin G. Donohoe ,  Cem Basceri

发明人： Dinesh Chopra ,  Kevin G. Donohoe ,  Cem Basceri

IPC分类号： H01L21/44

CPC分类号： H01L21/28079 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76879 ,  H01L28/91 ,  H01L29/66583

摘要： In a copper plating process, a seed layer is uniformly deposited over a surface, including lining a high aspect ratio trench defined by that surface. A mask layer is provided using a process that fails to deposit in the trench. In one exemplary embodiment, the failure is due to the decrease in the isotropic flux of neutrals toward the bottom of the trench. Copper is subsequently electroplated. Because the seed layer is exposed only within the trench, copper deposits only therein. The self-aligned mask prevents plating outside of the trench. A chemical-mechanical planarization step removes the mask and the seed layer extending beyond the trench, leaving a copper structure within the trench. The structure may serve as a conductive line, an interconnect, or a capacitor plate.