公开(公告)号：US07212878B2

公开(公告)日：2007-05-01

申请号：US10927500

申请日：2004-08-27

Applicant: Merritt Funk ,  Wesley Natzle

Inventor： Merritt Funk ,  Wesley Natzle

IPC: G06F19/00

CPC classification number: G05B19/41865 ,  G05B2219/45031 ,  H01L22/20 ,  Y02P80/114 ,  Y02P90/20 ,  Y02P90/86

Abstract: The invention relates to controlling a semiconductor processing system. Among other things, the invention relates to a run-to-run controller to create virtual modules to control a multi-pass process performed by a multi-chamber tool during the processing of a semiconductor wafer.

Abstract translation: 本发明涉及控制半导体处理系统。 其中，本发明涉及一种运行到运行的控制器，用于创建虚拟模块以控制在半导体晶片的处理期间由多室工具执行的多遍处理。

公开(公告)号：US20060064193A1

公开(公告)日：2006-03-23

申请号：US10944463

申请日：2004-09-20

Applicant: Asao Yamashita ,  Merritt Funk ,  Daniel Prager

Inventor： Asao Yamashita ,  Merritt Funk ,  Daniel Prager

IPC: G06F19/00

CPC classification number: H01L22/20 ,  H01L21/32139 ,  H01L2924/0002 ,  H01L2924/00

Abstract: This method includes a method for etch processing that allows the bias between isolated and nested structures/features to be adjusted, correcting for a process wherein the isolated structures/features need to be smaller than the nested structures/features and wherein the nested structures/features need to be reduced relative to the isolated structures/features, while allowing for the critical control of trimming.

Abstract translation: 该方法包括用于蚀刻处理的方法，其允许调整隔离结构/嵌套结构/特征之间的偏置，校正其中隔离结构/特征需要小于嵌套结构/特征的过程，并且其中嵌套结构/特征 需要相对于孤立的结构/特征而减少，同时允许对修剪的关键控制。

公开(公告)号：US20060015206A1

公开(公告)日：2006-01-19

申请号：US10890410

申请日：2004-07-14

Applicant: Merritt Funk ,  Kevin Pinto ,  Asao Yamashita ,  Wesley Natzle

Inventor： Merritt Funk ,  Kevin Pinto ,  Asao Yamashita ,  Wesley Natzle

IPC: G06F19/00

CPC classification number: H01L22/20 ,  H01L21/67248 ,  H01L21/67253 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A dual chamber apparatus including a first chamber and a second chamber which is configured to be coupled to the first chamber at an interface. Each of the first chamber and the second chamber has a transfer opening located at the interface. An insulating plate is located on one of the first chamber and the second chamber at the interface and is configured to have a low thermal conductivity such that the first chamber and the second chamber can be independently controlled at different temperatures when the first chamber and the second chamber are coupled together. Additionally, the apparatus may include an alignment device and/or a fastening device for fastening the first chamber to the second chamber. In embodiments, the insulating plate may be constructed of Teflon. Further, the first chamber may be a chemical oxide removal treatment chamber and the second chamber may be a heat treatment chamber.

Abstract translation: 一种双室装置，包括第一室和第二室，其构造成在界面处联接到第一室。 第一室和第二室中的每个具有位于界面处的传送开口。 绝缘板位于界面处的第一室和第二室中的一个上，并被构造成具有低导热性，使得当第一室和第二室可以在不同的温度下独立地控制第一室和第二室 腔室耦合在一起。 另外，该装置可以包括用于将第一室紧固到第二室的对准装置和/或紧固装置。 在实施例中，绝缘板可以由特氟隆构成。 此外，第一室可以是化学除氧处理室，第二室可以是热处理室。

公开(公告)号：US20050165731A1

公开(公告)日：2005-07-28

申请号：US11057422

申请日：2005-02-15

Applicant: Merritt Funk

Inventor： Merritt Funk

IPC: H01L21/02 ,  G05B15/02 ,  G05B19/418 ,  G05B23/02 ,  G06F17/30

CPC classification number: G05B15/02 ,  G05B19/41865 ,  G05B19/41875 ,  G05B23/0224 ,  G05B2219/32128 ,  G05B2219/33054 ,  G05B2219/33055 ,  G05B2219/35504 ,  G05B2219/36284 ,  G05B2219/42001 ,  Y02P90/14 ,  Y02P90/20 ,  Y02P90/22 ,  Y02P90/86

Abstract: A method for managing data in a semiconductor processing environment. Raw data is collected during a process. Also, trace file data and process log file data are received. The raw data is synchronized with the trace file data and process log file data to create wafer data summary data is calculated from the raw data and a file is created containing the wafer data and the summary data.

Abstract translation: 一种用于在半导体处理环境中管理数据的方法。 在一个过程中收集原始数据。 而且，接收跟踪文件数据和进程日志文件数据。 原始数据与跟踪文件数据和进程日志文件数据同步，以创建晶片数据摘要数据是从原始数据计算的，并创建一个包含晶圆数据和摘要数据的文件。

公开(公告)号：US20050065630A1

公开(公告)日：2005-03-24

申请号：US10966112

申请日：2004-10-18

Applicant: Merritt Funk ,  Wei Chen

Inventor： Merritt Funk ,  Wei Chen

IPC: H01L21/02 ,  G05B19/042 ,  G05B19/418 ,  G06F19/00

CPC classification number: G05B19/042 ,  G05B19/418 ,  G05B19/4187 ,  G05B2219/32128 ,  G05B2219/45031 ,  Y02P90/14 ,  Y02P90/205 ,  Y02P90/86

Abstract: A GUI is presented for configuring and initializing a semiconductor processing system, which includes a number of processing tools, a number of processing modules, a number of sensors, a number of processing models, and an alarm management system. The graphical display is organized so that all significant parameters are clearly and logically displayed so that the user is able to perform the desired configuration, initialization, and troubleshooting tasks with as little input as possible. The GUI is web-based and is viewable by a user using a web browser.

Abstract translation: 提供了用于配置和初始化半导体处理系统的GUI，其包括多个处理工具，多个处理模块，多个传感器，多个处理模型和警报管理系统。 图形显示被组织，使得所有重要的参数都被清楚和逻辑地显示，使得用户能够以尽可能少的输入执行所需的配置，初始化和故障排除任务。 GUI是基于Web的，并且可以由使用web浏览器的用户查看。

公开(公告)号：US08968588B2

公开(公告)日：2015-03-03

申请号：US13436458

申请日：2012-03-30

Applicant: Jianping Zhao ,  Lee Chen ,  Vincent M. Donnelly ,  Demetre J. Economou ,  Merritt Funk ,  Radha Sundararajan

Inventor： Jianping Zhao ,  Lee Chen ,  Vincent M. Donnelly ,  Demetre J. Economou ,  Merritt Funk ,  Radha Sundararajan

IPC: H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC classification number: H01J37/32192 ,  C23C16/511 ,  H01J37/32293 ,  H05H1/46 ,  H05H2001/4615 ,  H05H2001/463

Abstract: A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.

Abstract translation: 表面波等离子体（SWP）源通过例如径向线缝隙天线将脉冲微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 为了在脉冲之间的等离子体密度低的情况下防止微波能量暴露在基板的表面上，在SWP源和SWP源之间提供诸如螺旋感应源，平面RF线圈或其他电感耦合源的ICP源 该衬底产生对微波能量不透明的等离子体。 ICP源也可以与MW等离子体的脉冲同步脉冲同步，随着MW脉冲的上升。 ICP还将等离子体的边缘致密分布添加到通常以室为中心的MW等离子体以改善等离子体均匀性。

公开(公告)号：US20130256272A1

公开(公告)日：2013-10-03

申请号：US13436458

申请日：2012-03-30

Applicant: Jianping Zhao ,  Lee Chen ,  Vincent M. Donnelly ,  Demetre J. Economou ,  Merritt Funk ,  Radha Sundararajan

Inventor： Jianping Zhao ,  Lee Chen ,  Vincent M. Donnelly ,  Demetre J. Economou ,  Merritt Funk ,  Radha Sundararajan

IPC: H05H1/24 ,  B44C1/22 ,  C23C16/511 ,  C23C16/52

CPC classification number: H01J37/32192 ,  C23C16/511 ,  H01J37/32293 ,  H05H1/46 ,  H05H2001/4615 ,  H05H2001/463

Abstract: A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.

Abstract translation: 表面波等离子体（SWP）源通过例如径向线缝隙天线将脉冲微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 为了在脉冲之间的等离子体密度低的情况下防止微波能量暴露在基板的表面上，在SWP源和SWP源之间提供诸如螺旋感应源，平面RF线圈或其他电感耦合源的ICP源 该衬底产生对微波能量不透明的等离子体。 ICP源也可以与MW等离子体的脉冲同步脉冲同步，随着MW脉冲的上升。 ICP还将等离子体的边缘致密分布添加到通常以室为中心的MW等离子体以改善等离子体均匀性。

公开(公告)号：US20130256268A1

公开(公告)日：2013-10-03

申请号：US13436760

申请日：2012-03-30

Applicant: Lee Chen ,  Merritt Funk

Inventor： Lee Chen ,  Merritt Funk

IPC: B44C1/22 ,  B05B1/00 ,  B05C11/00 ,  B05C13/00

CPC classification number: H01J37/32834 ,  H01J37/32504 ,  H01J37/32633 ,  H01J37/32935

Abstract: A plasma processing system. The processing system comprises a process chamber having first and second ends arranged such that the first end opposes the second end. A substrate support is positioned at the first end of the process chamber and is configured to support a substrate. An exhaust system is positioned proximate the second end of the process chamber and draws a vacuum on the process chamber. Between the exhaust system and substrate support there is a plurality of super-Debye openings, and between the exhaust system and the plurality of super-Debye openings is a plurality of sub-Debye openings. The super-Debye openings are configured to limit diffusion of plasma while the sub-Debye openings are configured to quench plasma.

Abstract translation: 等离子体处理系统 处理系统包括处理室，该处理室的第一和第二端被布置为使得第一端与第二端相对。 衬底支撑件定位在处理室的第一端处并且被配置为支撑衬底。 排气系统定位在处理室的第二端附近并在处理室上抽真空。 在排气系统和基板支撑件之间存在多个超级德拜开口，并且在排气系统与多个超级德拜开口之间是多个次德开口。 超级德拜开口被配置为限制等离子体的扩散，而副德拜开口被配置为猝灭等离子体。

公开(公告)号：US08486798B1

公开(公告)日：2013-07-16

申请号：US13366340

申请日：2012-02-05

Applicant: Zhiying Chen ,  Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

Inventor： Zhiying Chen ,  Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

IPC: H01L21/20 ,  H01L29/93 ,  H01L21/306

CPC classification number: H01J37/32807 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642

Abstract: A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated to include a semiconductor junction, and wherein a capacitance of the chamber component is varied when a voltage is applied across the semiconductor junction.

Abstract translation: 描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。 可更换腔室元件包括被配置为在等离子体处理系统中暴露于等离子体的室部件，其中腔室部件被制造为包括半导体结，并且其中当跨越半导体施加电压时腔室部件的电容变化 交界处

公开(公告)号：US20130084706A1

公开(公告)日：2013-04-04

申请号：US13249418

申请日：2011-09-30

Applicant: Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L.G. Ventzek

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L.G. Ventzek

IPC: H01L21/311 ,  H01L21/3065

CPC classification number: H01J37/3222 ,  H01J37/32256 ,  H01J37/32293

Abstract: The invention provides a plurality of Surface Wave Antenna (SWA) plasma sources. The SWA plasma sources can comprise one or more non-circular slot antennas, each having a plurality of plasma-tuning rods extending therethrough. Some of the plasma tuning rods can be configured to couple the electromagnetic (EM) energy from one or more of the non-circular slot antennas to the process space within the process chamber. The invention also provides SWA plasma sources that can comprise a plurality of resonant cavities, each having one or more plasma-tuning rods extending therefrom. Some of the plasma tuning rods can be configured to couple the EM energy from one or more of the resonant cavities to the process space within the process chamber.

Abstract translation: 本发明提供了多个表面波天线（SWA）等离子体源。 SWA等离子体源可以包括一个或多个非圆形缝隙天线，每个天线具有延伸穿过其中的多个等离子体调谐杆。 一些等离子体调谐杆可以被配置为将来自一个或多个非圆形缝隙天线的电磁（EM）能量耦合到处理室内的处理空间。 本发明还提供了可以包括多个谐振腔的SWA等离子体源，每个谐振腔具有从其延伸的一个或多个等离子体调谐杆。 等离子体调谐杆中的一些可以被配置为将来自一个或多个谐振腔的EM能量耦合到处理室内的处理空间。