Plasma Display Panel
    91.
    发明申请
    Plasma Display Panel 失效
    等离子显示面板

    公开(公告)号:US20070001603A1

    公开(公告)日:2007-01-04

    申请号:US11275150

    申请日:2005-12-15

    申请人: Min Park

    发明人: Min Park

    IPC分类号: H01J17/49

    摘要: Disclosed is a plasma display panel. A plasma display panel according to an embodiment of the present invention comprises a front substrate and a rear substrate attached to each other with a predetermined distance therebetween, a plurality of barrier ribs disposed between the front and rear substrates creating a plurality of discharge cells, and a plurality of scan electrodes and a plurality of sustain electrodes which are alternately arranged in each discharge cell. The plasma display panel has the enhanced discharge efficiency and emission efficiency. Further, the plasma display panel can be manufacture at low cost.

    摘要翻译: 公开了一种等离子体显示面板。 根据本发明的实施例的等离子体显示面板包括前面基板和后基板,其间以预定距离彼此附接,多个隔壁设置在前基板和后基板之间,形成多个放电单元,以及 多个扫描电极和多个维持电极,它们交替布置在每个放电单元中。 等离子体显示面板具有增强的放电效率和发射效率。 此外,等离子体显示面板可以以低成本制造。

    Green sheet and method of manufacturing the same, and a method of manufacturing a plasma display panel
    92.
    发明申请
    Green sheet and method of manufacturing the same, and a method of manufacturing a plasma display panel 审中-公开
    生片及其制造方法以及等离子体显示面板的制造方法

    公开(公告)号:US20060121393A1

    公开(公告)日:2006-06-08

    申请号:US11293267

    申请日:2005-12-05

    申请人: Eun Moon Min Park

    发明人: Eun Moon Min Park

    IPC分类号: G03C5/00

    摘要: The present invention relates to a green sheet and method of manufacturing the same, and a method of manufacturing a plasma display panel. According to the present invention, a black matrix layer and an electrode layer are formed on a substrate at the same time by once laminating a film in which the black matrix layer and the electrode layer are formed. In accordance with a method of manufacturing a plasma display panel according to the present invention, the number of a lamination process can be reduced, the consumption of a base film and a cover film can be reduced, and a possibility that fail may occur during a lamination process can be reduced.

    摘要翻译: 生片及其制造方法技术领域本发明涉及生片及其制造方法,等离子体显示面板的制造方法。 根据本发明,通过一次层叠形成黑矩阵层和电极层的膜,同时在基板上形成黑矩阵层和电极层。 根据本发明的等离子体显示面板的制造方法,可以减少层压处理次数,能够降低基膜和覆盖膜的消耗,并且可能发生在 可以降低层压过程。

    Plasma display panel comprising electrode pad

    公开(公告)号:US20060119270A1

    公开(公告)日:2006-06-08

    申请号:US11296353

    申请日:2005-12-08

    申请人: Min Park

    发明人: Min Park

    IPC分类号: H01J17/49

    CPC分类号: H01J11/10 H01J11/46

    摘要: The present invention relates to a plasma display panel comprising an electrode pad. The plasma display panel of the present invention comprises an electrode formed in a first region of a substrate, and an auxiliary pad and an electrode pad formed in a second region of the substrate. Therefore, since adhesive force between the auxiliary pad and the electrode pad is improved, a phenomenon in which the electrode pad are fallen off can be prevented.

    De-interlacing algorithm responsive to edge pattern
    96.
    发明申请
    De-interlacing algorithm responsive to edge pattern 有权
    解交织算法响应边缘模式

    公开(公告)号:US20050036062A1

    公开(公告)日:2005-02-17

    申请号:US10898526

    申请日:2004-07-23

    申请人: Moon Kang Min Park

    发明人: Moon Kang Min Park

    摘要: There is provided a de-interlacing method including: receiving first and third image lines; selecting an upper vector having an N number of pixels among the first image lines, and selecting a lower vector having an N number of pixels among the third image lines; obtaining a weighted value on the basis of a relation between the pixels within the upper vector and a relation between the pixels within the lower vector; selecting an edge direction from the selected upper vector, the selected lower vector, and the obtained weighted value; and interpolating a pixel belonging to a second image line between the first and third image lines on the basis of the selected edge direction.

    摘要翻译: 提供了一种去隔行扫描方法,包括:接收第一和第三图像行; 在第一图像行中选择具有N个像素的上矢量,并且在第三图像行中选择具有N个像素的下矢量; 基于上部矢量内的像素与下侧矢量内的像素的关系,求出加权值; 从所选择的上矢量,所选择的下矢量和获得的加权值中选择边缘方向; 并且基于所选择的边缘方向在第一和第三图像行之间插入属于第二图像线的像素。

    Preparation of clay-dispersed polymer nanocomposite
    97.
    发明授权
    Preparation of clay-dispersed polymer nanocomposite 失效
    粘土分散聚合物纳米复合材料的制备

    公开(公告)号:US06770696B1

    公开(公告)日:2004-08-03

    申请号:US10069617

    申请日:2002-02-27

    IPC分类号: C08K334

    摘要: Disclosed is a method for preparing a clay-dispersed polymer nanocomposite. In this method, a polymer, which carries oxygen atoms within the repeating units of its backbone and is thermodynamically compatible with a binder resin, is used as a matrix resin. Useful is poly(&egr;-caprolactone) owing to its thermodynamic compatibility with poly(styrene-co-acrylonitrile)copolymers, poly(acrylonitrile-co-butadiene-co-styrene) copolymers, and poly(vinylchloride) resins. Poly(&egr;-caprolactone) resins aid the binder resins to penetrate into silicate layers so that the silicate of the organophilic clay was completely delaminated to silicate lamellas.

    摘要翻译: 公开了一种制备粘土分散聚合物纳米复合材料的方法。 在该方法中,使用在其主链的重复单元内携带氧原子并与粘合剂树脂热力学相容的聚合物作为基质树脂。 由于其与聚(苯乙烯 - 共 - 丙烯腈)共聚物,聚(丙烯腈 - 共 - 丁二烯 - 共 - 苯乙烯)共聚物和聚(氯乙烯)树脂的热力学相容性,有用的是聚(ε-己内酯)。 聚(ε-己内酯)树脂有助于粘合剂树脂渗透到硅酸盐层中,使得有机粘土的硅酸盐完全分层成硅酸盐薄片。

    Pseudomorphic high electron mobility transistor power device
    98.
    发明授权
    Pseudomorphic high electron mobility transistor power device 有权
    伪态高电子迁移率晶体管功率器件

    公开(公告)号:US06593603B1

    公开(公告)日:2003-07-15

    申请号:US10112359

    申请日:2002-03-29

    IPC分类号: H01L29739

    CPC分类号: H01L29/7785

    摘要: A pseudomorphic high electron mobility transistor (PHEMT) power device formed on a double planar doped epitaxial substrate and capable of operating with a single voltage source and a method for manufacturing the PHEMT power device are provided. The PHEMT power device includes: an epitaxial substrate including a GaAs buffer layer, an AlGaAs/GaAs superlattice layer, an updoped AlGaAs layer, a first doped silicon layer, a first spacer, an InGaAs electron transit layer, a second spacer, a second doped silicon layer having a different doping concentration from the first doped silicon layer, a lightly doped AlGaAs layer, and an undoped GaAs cap layer stacked sequentially on a semi-insulating GaAs substrate; a source electrode and a drain electrode formed on and in ohmic contact with the undoped GaAs cap layer; and a gate electrode formed on the lightly doped AlGaAs layer to extend through the undoped GaAs cap layer.

    摘要翻译: 提供了一种形成在双平面掺杂外延基板上并且能够用单个电压源操作的伪形高电子迁移率晶体管(PHEMT)功率器件和用于制造PHEMT功率器件的方法。 PHEMT功率器件包括:外延衬底,其包括GaAs缓冲层,AlGaAs / GaAs超晶格层,上升的AlGaAs层,第一掺杂硅层,第一间隔物,InGaAs电子迁移层,第二间隔物,第二掺杂 硅层,其具有与第一掺杂硅层不同的掺杂浓度,轻掺杂AlGaAs层和未掺杂的GaAs覆盖层,其顺序堆叠在半绝缘GaAs衬底上; 源电极和漏电极,形成在与未掺杂的GaAs盖层的欧姆接触中; 以及形成在轻掺杂的AlGaAs层上以延伸穿过未掺杂的GaAs覆盖层的栅电极。

    Method for fabricating a inductor of low parasitic resistance and capacitance
    99.
    发明授权
    Method for fabricating a inductor of low parasitic resistance and capacitance 有权
    制造低寄生电阻和电容的电感器的方法

    公开(公告)号:US06395637B1

    公开(公告)日:2002-05-28

    申请号:US09168343

    申请日:1998-10-07

    IPC分类号: H01L21302

    摘要: The present invention relates to a method for fabricating an inductor and, more particularly, to a method for fabricating a spiral inductor used in a monolithic microwave integrated circuit on a silicon substrate using semiconductor fabrication processes. The method for fabricating an inductor, comprising the steps of: forming a first dielectric layer on a silicon substrate and forming a first metal wire on the first dielectric layer, wherein the first metal wire is in contact with an active element formed on the silicon substrate; and alternatively forming dielectric layers and metal layers, wherein the metal layers are electrically connected with an upper metal wire and a lower metal wire and wherein the metal layers are patterned using the dielectric layers as etching mask, whereby a metal corrosion is prevented by using the spiral dielectric pattern as the etching mask.

    摘要翻译: 本发明涉及一种用于制造电感器的方法,更具体地说,涉及使用半导体制造工艺制造在硅衬底上的单片微波集成电路中使用的螺旋电感器的方法。 一种制造电感器的方法,包括以下步骤:在硅衬底上形成第一电介质层并在第一电介质层上形成第一金属线,其中第一金属线与形成在硅衬底上的有源元件接触 ; 还可以形成电介质层和金属层,其中金属层与上金属线和下金属线电连接,并且其中使用电介质层作为蚀刻掩模对金属层进行构图,由此通过使用 螺旋介质图案作为蚀刻掩模。

    Apparatus for improving linearity of small signal
    100.
    发明授权
    Apparatus for improving linearity of small signal 有权
    改善小信号线性度的装置

    公开(公告)号:US6081159A

    公开(公告)日:2000-06-27

    申请号:US164358

    申请日:1998-10-01

    IPC分类号: H04B1/62 H03F1/32 H03F1/26

    CPC分类号: H03F1/342 H03F1/3205

    摘要: An apparatus for improving linearity of small signal according to the present invention comprises a least of one non-linear signal generating means for receiving a first DC bias larger than a threshold voltage and for generating a non-linear signal; feedback means for returning the non-linear signal from said a least of one non-linear signal generating means; and amplifying means for receiving, amplifying and outputting to an output unit, a second DC bias larger than the threshold voltage and a reversed and feedback non-linear signal such that the non-linear signal is cancelled. The linearizers according to the present invention have a higher linearity and a simple constitution, and thereby being used for various terminals.

    摘要翻译: 根据本发明的用于提高小信号线性度的装置包括至少一个非线性信号发生装置,用于接收大于阈值电压的第一DC偏压并用于产生非线性信号; 用于从所述至少一个非线性信号产生装置返回非线性信号的反馈装置; 以及放大装置,用于对输出单元接收,放大和输出大于阈值电压的第二DC偏置和反相和反馈非线性信号,使得非线性信号被消除。 根据本发明的线性化器具有较高的线性度和简单的结构,从而用于各种端子。