公开(公告)号：US07576455B2

公开(公告)日：2009-08-18

申请号：US11503057

申请日：2006-08-14

申请人： Chi-Hsin Ho ,  Chih-Chien Liu

发明人： Chi-Hsin Ho ,  Chih-Chien Liu

IPC分类号： H02K41/00

CPC分类号： H02K41/0356 ,  G02B7/08

摘要： A high performance focusing actuator of a voice coil motor comprises a retaining unit having a plastic retaining frame; a center portion of the plastic retaining frame being a receiving space; two opposite corners of the receiving space being chamfered; an inner side of each chamfered side being formed with a slide portion; and a metal rear cover plate having a shape corresponding to that of the plastic retaining frame; the metal rear cover plate having an open space coaxial with the receiving space of the plastic retaining frame; an outer side of the metal rear cover plate having four outer plates; each of two opposite corners of each outer plate being formed with an inclined guide surface corresponding to the slide portion of the plastic retaining frame; an iron receiving gap being formed between an inclined guide surface and outer plate; and each iron receiving gap receiving a magnet.

摘要翻译： 音圈马达的高性能聚焦致动器包括具有塑料保持架的保持单元; 塑料保持框架的中心部分是容纳空间; 接收空间的两个相对角被倒角; 每个倒角侧的内侧形成有滑动部分; 和金属后盖板，其形状与塑料保持架的形状相对应; 金属后盖板具有与塑料保持框架的容纳空间同轴的开放空间; 金属后盖板的外侧有四个外板; 每个外板的两个相对的角部中的每一个形成有对应于塑料保持框架的滑动部分的倾斜导向表面; 在倾斜的引导表面和外部板之间形成铁接收间隙; 并且每个铁接收间隙接收磁体。

公开(公告)号：US20090146311A1

公开(公告)日：2009-06-11

申请号：US12370602

申请日：2009-02-13

申请人： Feng-Yu Hsu ,  Chih-Chien Liu ,  Chun-Chieh Huang ,  Jei-Ming Chen ,  Shu-Jen Sung

发明人： Feng-Yu Hsu ,  Chih-Chien Liu ,  Chun-Chieh Huang ,  Jei-Ming Chen ,  Shu-Jen Sung

IPC分类号： H01L23/52

CPC分类号： H01L21/7682 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure is disposed on a substrate with a conductive part thereon and includes a first porous low-k layer on the substrate, a damascene structure in the first porous low-k layer, a second porous low-k layer over the first porous low-k layer and the damascene structure, and a first UV cutting layer at least between the first porous low-k layer and the second porous low-k layer. The damascene structure is electrically connected with the conductive part. The UV cutting layer is a UV reflection layer or a UV reflection-absorption layer.

摘要翻译： 互连结构设置在其上具有导电部分的衬底上，并且在衬底上包括第一多孔低k层，第一多孔低k层中的镶嵌结构，第一多孔低k层上的第二多孔低k层 -k层和镶嵌结构，以及至少在第一多孔低k层和第二多孔低k层之间的第一UV切割层。 镶嵌结构与导电部分电连接。 UV切割层是UV反射层或UV反射吸收层。

公开(公告)号：US20070093053A1

公开(公告)日：2007-04-26

申请号：US11565632

申请日：2006-12-01

申请人： Feng-Yu Hsu ,  Chih-Chien Liu ,  Jim-Jey Huang ,  Jei-Ming Chen

发明人： Feng-Yu Hsu ,  Chih-Chien Liu ,  Jim-Jey Huang ,  Jei-Ming Chen

IPC分类号： C08F2/46 ,  H01L21/4763 ,  C08J7/18

CPC分类号： H01L23/53295 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating an interconnect structure is described. A substrate with a conductive part thereon is provided, a first porous low-k layer is formed on the substrate, and then a first UV-curing step is conducted. A damascene structure is formed in the first porous low-k layer to electrically connect with the conductive part, and then a first UV-absorption layer is formed on the first porous low-k layer and the damascene structure. A second porous low-k layer is formed on the first UV-absorption layer, and a second UV-curing step is conducted.

摘要翻译： 描述了制造互连结构的方法。 提供其上具有导电部分的基板，在基板上形成第一多孔低k层，然后进行第一UV固化步骤。 在第一多孔低k层中形成镶嵌结构以与导电部分电连接，然后在第一多孔低k层和镶嵌结构上形成第一紫外线吸收层。 在第一UV吸收层上形成第二多孔低k层，进行第二UV固化步骤。

公开(公告)号：US20070022308A1

公开(公告)日：2007-01-25

申请号：US11307393

申请日：2006-02-06

申请人： Yi-Chang Chen ,  Chih-Chien Liu

发明人： Yi-Chang Chen ,  Chih-Chien Liu

IPC分类号： G06F1/26

CPC分类号： G06F1/3203 ,  H04N21/4143 ,  H04N21/42646 ,  H04N21/4325 ,  H04N21/4432 ,  H04N21/4435 ,  H04N21/482 ,  H04N21/8193

摘要： A method for instant on multimedia playing is provided, which enables a computer to selectively enter an operation mode of an IOMP (Instant On Multimedia Player) program when it enters a power conservation mode. First, a computer system stays in the power conservation mode, until an IOMP activating signal has been received. Next, the computer system saves the hardware information of the computer into a memory. And then a processor of the computer reads an IOMP program from another memory and executes the IOMP program to produce and display a human-computer interface menu, which is provided for users to select files for playing. Next, the processor executes the IOMP program to play the files selected previously. Finally, upon the receipt of a recovery instruction, the computer system saves the hardware information back into the computer to recover the computer to the power conservation mode.

摘要翻译： 提供一种用于即时多媒体播放的方法，其使得计算机能够在进入功率节省模式时选择性地进入IOMP（即时多媒体播放器）程序的操作模式。 首先，计算机系统保持在省电模式，直到接收到IOMP激活信号。 接下来，计算机系统将计算机的硬件信息保存到存储器中。 然后计算机的处理器从另一个存储器读取IOMP程序，并执行IOMP程序以产生并显示人机界面菜单，该菜单为用户选择要播放的文件。 接下来，处理器执行IOMP程序来播放以前选择的文件。 最后，在收到恢复指令后，计算机系统将硬件信息保存回计算机，以将计算机恢复到省电模式。

公开(公告)号：US20060166011A1

公开(公告)日：2006-07-27

申请号：US11351650

申请日：2006-02-10

申请人： Mei-Ling Chen ,  Chih-Chien Liu

发明人： Mei-Ling Chen ,  Chih-Chien Liu

IPC分类号： H05H1/24 ,  B32B13/04

CPC分类号： H01L21/02274 ,  C23C16/401 ,  C23C16/4405 ,  H01L21/02115 ,  H01L21/02164 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76826

摘要： A method of reducing the number of particles on a low-k material layer is described. The low-k material layer is formed by a plasma enhanced chemical vapor deposition process, wherein a reaction gas, a cleaning gas, a high-frequency power and a low-frequency power are used. The method includes turning off the reaction gas and the low-frequency power after the low-k material layer is formed, and continuing to provide the cleaning gas during a delay time.

摘要翻译： 描述了一种减少低k材料层上的颗粒数量的方法。 低k材料层通过等离子体增强化学气相沉积法形成，其中使用反应气体，清洁气体，高频功率和低频功率。 该方法包括在形成低k材料层之​​后关闭反应气体和低频功率，并且在延迟时间内继续提供清洁气体。

公开(公告)号：US20060099824A1

公开(公告)日：2006-05-11

申请号：US11315904

申请日：2005-12-22

申请人： Chih-Chien Liu ,  Ta-Shan Tseng ,  W.B. Shieh ,  J.Y. Wu ,  Water Lur ,  Shih-Wei Sun

发明人： Chih-Chien Liu ,  Ta-Shan Tseng ,  W.B. Shieh ,  J.Y. Wu ,  Water Lur ,  Shih-Wei Sun

IPC分类号： H01L21/31

CPC分类号： H01L21/02112 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31612 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76838

摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

公开(公告)号：US20060040490A1

公开(公告)日：2006-02-23

申请号：US10711015

申请日：2004-08-18

申请人： Jei-Ming Chen ,  Chin-Hsiang Lin ,  Chih-Chien Liu ,  Kuo-Chih Lai

发明人： Jei-Ming Chen ,  Chin-Hsiang Lin ,  Chih-Chien Liu ,  Kuo-Chih Lai

IPC分类号： H01L21/4763

CPC分类号： H01L21/02274 ,  C23C16/0245 ,  C23C16/325 ,  H01L21/02167 ,  H01L21/3148 ,  H01L21/76823 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76889

摘要： A dielectric layer overlying a substrate is prepared. A damascene opening is etched into the dielectric layer. The damascene opening is filled with copper or copper alloy. A surface of the copper or copper alloy is treated with hydrogen-containing plasma such as H2 or NH3 plasma. The treated surface of the copper or copper alloy then reacts with trimethylsilane or tertramethylsilane under plasma enhanced chemical vapor deposition (PECVD) conditions. Subsequently, by PECVD, a silicon carbide layer is in-situ deposited on the copper or copper alloy.

摘要翻译： 准备覆盖衬底的电介质层。 镶嵌开口蚀刻到电介质层中。 镶嵌开口填充有铜或铜合金。 铜或铜合金的表面用含氢等离子体如H 2 N 3或NH 3 3等离子体处理。 然后在等离子体增强化学气相沉积（PECVD）条件下，铜或铜合金的处理表面与三甲基硅烷或三甲基硅烷反应。 随后，通过PECVD，将碳化硅层原位沉积在铜或铜合金上。

公开(公告)号：US06352918B1

公开(公告)日：2002-03-05

申请号：US09199877

申请日：1998-11-24

申请人： Yimin Huang ,  Chih-Chien Liu ,  Tri-Rung Yew

发明人： Yimin Huang ,  Chih-Chien Liu ,  Tri-Rung Yew

IPC分类号： H01L21311

CPC分类号： H01L21/76802

摘要： A method of forming an inter-metal interconnection is provided. A substrate is provided. A dielectric layer with a metal plug therein is formed on the substrate. An IMD layer is formed on the dielectric layer. An insulating layer and a PE-oxide layer are formed on the IMD layer. A photolithography and etching process is performed to form a trench in the IMD layer and to expose the metal plug in the dielectric layer. A metal is filled into the trench to electrically connect to the metal plug.

摘要翻译： 提供了形成金属间互连的方法。 提供基板。 在基板上形成有金属塞的电介质层。 在电介质层上形成IMD层。 在IMD层上形成绝缘层和PE-氧化物层。 进行光刻和蚀刻工艺以在IMD层中形成沟槽并露出介电层中的金属插塞。 将金属填充到沟槽中以电连接到金属插头。

公开(公告)号：US06339025B1

公开(公告)日：2002-01-15

申请号：US09304436

申请日：1999-04-03

申请人： Chih-Chien Liu ,  Kun-Chih Wang ,  Wen-Yi Hsieh ,  Yimin Huang

发明人： Chih-Chien Liu ,  Kun-Chih Wang ,  Wen-Yi Hsieh ,  Yimin Huang

IPC分类号： H01L2144

CPC分类号： H01L21/76886 ,  H01L21/3185 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76867

摘要： A method of fabricating a copper capping layer. A silicon rich nitride layer is formed on an exposed copper layer. Since the silicon rich nitride layer has more dangling bonds inside, the silicon in the silicon rich nitride layer easily reacts with the copper and a copper silicide layer is formed between the copper and the silicon rich nitride layer. Therefore, adhesion of the copper and the silicon rich nitride layer can be improved.

摘要翻译： 一种制造铜覆盖层的方法。 在暴露的铜层上形成富氮的氮化物层。 由于富含硅的氮化物层内部具有更多的悬空键，富硅氮化物层中的硅容易与铜反应，并且在铜和富硅氮化物层之间形成铜硅化物层。 因此，可以提高铜和富硅氮化物层的粘合性。

公开(公告)号：US6146974A

公开(公告)日：2000-11-14

申请号：US348884

申请日：1999-07-01

申请人： Chih-Chien Liu ,  Cheng-Yuan Tsai ,  Gwo-Shii Yang ,  Juan-Yuan Wu

发明人： Chih-Chien Liu ,  Cheng-Yuan Tsai ,  Gwo-Shii Yang ,  Juan-Yuan Wu

IPC分类号： H01L21/762 ,  H01L21/76

CPC分类号： H01L21/76224 ,  Y10S148/05

摘要： A method of fabricating shallow trench isolation (STI) forms a trench in a substrate and a liner oxide layer in the trench. A first high density plasma chemical vapor deposition (HDPCVD) is performed to form a conformal oxide layer on the liner oxide layer, without applying bias to the substrate. A second HDPCVD is then performed to form an oxide layer that fills the trench and covers the conformal oxide layer on the conformal oxide layer.

摘要翻译： 制造浅沟槽隔离（STI）的方法在衬底中形成沟槽，并在沟槽中形成衬垫氧化物层。 执行第一高密度等离子体化学气相沉积（HDPCVD）以在衬垫氧化物层上形成保形氧化物层，而不对衬底施加偏压。 然后执行第二HDPCVD以形成填充沟槽并覆盖保形氧化物层上的共形氧化物层的氧化物层。