公开(公告)号：US07121157B2

公开(公告)日：2006-10-17

申请号：US10913940

申请日：2004-08-06

申请人： Meng H. Lean ,  Huangpin Ben Hsieh ,  Armin R. Völkel ,  Peter Kiesel ,  Noble Johnson

发明人： Meng H. Lean ,  Huangpin Ben Hsieh ,  Armin R. Völkel ,  Peter Kiesel ,  Noble Johnson

IPC分类号： G01N1/04 ,  G01N1/22

CPC分类号： G01N1/08

摘要： Disclosed is a compact, non-contacting device for collecting samples, and particularly minute quantities of bio-agents or particulates, from a surface. The device vibrates a region of a target surface containing the sample and collects the sample on an electrically charged pin array. The sample can be later released to a detector or other instrumentation for subsequent analysis.

摘要翻译： 公开了用于从表面收集样品，特别是微量的生物剂或微粒的紧凑的非接触装置。 该装置使含有样品的目标表面的区域振动，并在充电的针阵列上收集样品。 样品可以随后释放到检测器或其他仪器进行后续分析。

公开(公告)号：US20060134883A1

公开(公告)日：2006-06-22

申请号：US11015665

申请日：2004-12-20

申请人： Thomas Hantschel ,  Noble Johnson ,  Peter Kiesel ,  Christian Van De Walle ,  William Wong

发明人： Thomas Hantschel ,  Noble Johnson ,  Peter Kiesel ,  Christian Van De Walle ,  William Wong

IPC分类号： H01L21/44

CPC分类号： H01L29/45 ,  B82Y10/00 ,  B82Y30/00 ,  C30B25/00 ,  C30B29/02 ,  C30B29/16 ,  C30B29/406 ,  C30B29/60 ,  G01N27/127 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02521 ,  H01L21/02554 ,  H01L21/02603 ,  H01L21/02664 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/16 ,  H01L29/2003 ,  H01L29/221 ,  H01L29/861 ,  H01L33/0079 ,  H01L33/08 ,  Y10S977/753 ,  Y10S977/783 ,  Y10S977/932

摘要： Systems and methods may provide electrical contacts to an array of substantially vertically aligned nanorods. The nanorod array may be fabricated on top of a conducting layer that serves as a bottom contact to the nanorods. A top metal contact may be applied to a plurality of nanorods of the nanorod array. The contacts may allow I/V (current/voltage) characteristics of the nanorods to be measured.

公开(公告)号：US20060073621A1

公开(公告)日：2006-04-06

申请号：US10954202

申请日：2004-10-01

申请人： Michael Kneissel ,  Peter Kiesel ,  William Wong ,  David Treat

发明人： Michael Kneissel ,  Peter Kiesel ,  William Wong ,  David Treat

IPC分类号： H01L21/00

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/7785 ,  H01L29/7787

摘要： Various exemplary embodiments of the devices and methods for this invention provide for a semiconductor structure and a method of manufacturing a semiconductor structure that includes providing an aluminum nitride nucleation layer over a substrate, providing an undoped AlGaN buffer layer over the aluminum nitride nucleation layer, providing an undoped GaN over the AlGaN buffer layer, providing a plurality of AlGaN layers over the GaN layer wherein the plurality of aluminum GaN layers comprise a first layer provided over the undoped GaN layer, a second layer provided over the first layer and the third layer provided over the second layer, providing a source electrode and a drain electrode, through the first, second and third aluminum gallium nitride layers, the source electrode and the drain electrode being in electrical contact with the gallium nitride layer and providing a gate electrode over the third aluminum gallium nitride layer.

摘要翻译： 用于本发明的装置和方法的各种示例性实施例提供半导体结构和制造半导体结构的方法，其包括在衬底上提供氮化铝成核层，在氮化铝成核层上提供未掺杂的AlGaN缓冲层，提供 在AlGaN缓冲层上的未掺杂的GaN，在GaN层上提供多个AlGaN层，其中多个铝GaN层包括设置在未掺杂GaN层上的第一层，设置在第一层上的第二层和设置在第一层上的第三层 在第二层上，通过第一，第二和第三氮化镓铝层提供源电极和漏电极，源电极和漏电极与氮化镓层电接触并在第三层上提供栅电极 氮化镓铝层。

公开(公告)号：US08437582B2

公开(公告)日：2013-05-07

申请号：US12409003

申请日：2009-03-23

申请人： Peter Kiesel ,  Oliver Schmidt

发明人： Peter Kiesel ,  Oliver Schmidt

IPC分类号： G02B6/00 ,  G02B6/12

CPC分类号： G02F1/29 ,  G01J1/42 ,  G01J3/02 ,  G01J3/0208 ,  G01J3/0216 ,  G01J3/0218 ,  G01J3/024 ,  G01J3/0256 ,  G01J3/26 ,  G01J3/2803 ,  G01J9/00 ,  G02B5/008 ,  G02B5/284 ,  G02B6/29317 ,  G02B6/4204 ,  G02B6/4298

摘要： Input light, such as from an optical sensor or stimulus-wavelength converter, includes one or more light or dark sub-bands. The input light is transmitted, such as through a transmissive layer or transmission component, to obtain effects due to transmission with lateral variation. A detector can, for example, obtain spectral information or other photon energy information about the sub-bands due to lateral variation. For each light or dark sub-band, a transmission component can, for example, provide a respective light or dark spot, and spot position can be used to obtain spectral information such as absolute wavelength or wavelength change. A photosensing component can sense or detect transmitted light or output photons, such as with a photosensor array or a position-sensitive detector. Circuitry can use photosensed quantities to obtain, e.g. a differential signal or information about time of wavelength change.

摘要翻译： 诸如来自光学传感器或刺激波长转换器的输入光包括一个或多个浅或暗的子带。 传输输入光，例如通过透射层或透射分量，以获得由于具有横向变化的透射而产生的影响。 检测器可以例如由于横向变化而获得关于子带的光谱信息或其他光子能量信息。 对于每个光或暗子带，透射分量可以例如提供相应的光斑或暗点，并且光斑位置可用于获得诸如绝对波长或波长变化的光谱信息。 感光组件可以感测或检测透射光或输出光子，例如用光电传感器阵列或位置敏感检测器。 电路可以使用光照量来获得，例如。 差分信号或有关波长变化时间的信息。

公开(公告)号：US07855098B2

公开(公告)日：2010-12-21

申请号：US12777062

申请日：2010-05-10

申请人： Peter Kiesel ,  Oliver Schmidt

发明人： Peter Kiesel ,  Oliver Schmidt

IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L21/331 ,  H01L21/326

CPC分类号： H01L29/66848 ,  H01L29/22 ,  H01L29/66143 ,  H01L31/108 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

摘要： A technique for altering or repairing the operating state of a semiconductor device comprises field-controlled diffusion of mobile dopant atoms within the metal oxide crystal lattice. When heated (e.g., above 550 K) in the presence of an electric field (e.g., bias to ground of +/−50 V) the dopant atoms are caused to collect to form an ohmic contact, leaving a depletion region. Metal-semiconductor junction devices such as diodes, photo-diodes, photo-detectors, MESFETs, etc. may thereby be fabricated, repaired or modified.

摘要翻译： 用于改变或修复半导体器件的工作状态的技术包括在金属氧化物晶格内的移动掺杂剂原子的场控扩散。 当在存在电场（例如，+/- 50V的接地偏压）的情况下加热（例如，高于550K）时，引起掺杂剂原子以形成欧姆接触，留下耗尽区。 因此，可以制造，修理或修改诸如二极管，光电二极管，光电检测器，MESFET等的金属 - 半导体结器件。

公开(公告)号：US07701590B2

公开(公告)日：2010-04-20

申请号：US11633302

申请日：2006-12-04

申请人： Peter Kiesel ,  Oliver Schmidt

发明人： Peter Kiesel ,  Oliver Schmidt

IPC分类号： G01B9/02 ,  G01J3/45

CPC分类号： G01J9/0246 ,  G01J3/26

摘要： Response to light with laterally varying photon energy distribution is based on position, such as position on a detector of a respective light spot or intensity maximum for a wavelength or photon energy subrange. A layered structure such as a coating over the detector can produce the laterally varying distribution, such as due to a laterally varying transmission property. A differential output or quantity can be obtained using sensing results from the detector and can then be used to monitor a light source's wavelength. The light source can, for example, be a pulsed or continuous laser, in which case an optical component between the light source and the detector can be structured to prevent inhomogeneities such as speckle and also reflection back to the laser that could cause feedback. A tunable light source can be tuned in response to positions at which its light is detected.

摘要翻译： 对具有横向变化的光子能量分布的光的响应基于位置，例如在相应光点的检测器上的位置或波长或光子能量子范围的强度最大值。 诸如检测器上的涂层的分层结构可以产生横向变化的分布，例如由于横向变化的传输特性。 可以使用来自检测器的感测结果获得差分输出或数量，然后可用于监测光源的波长。 例如，光源可以是脉冲或连续的激光器，在这种情况下，可以构造光源和检测器之间的光学部件，以防止诸如斑点的不均匀性，也可能反射回可能导致反馈的激光。 可调光源可以响应于其光被检测到的位置被调谐。

公开(公告)号：US20090042333A1

公开(公告)日：2009-02-12

申请号：US12199378

申请日：2008-08-27

申请人： Christian G. Van de Walle ,  Peter Kiesel ,  Oliver Schmidt

发明人： Christian G. Van de Walle ,  Peter Kiesel ,  Oliver Schmidt

IPC分类号： H01L21/00

CPC分类号： G01N27/414 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  H01L29/225

摘要： A semiconductor device has a heterostructure including a first layer of semiconductor oxide material. A second layer of semiconductor oxide material is formed on the first layer of semiconductor oxide material such that a two dimensional electron gas builds up at an interface between the first and second materials. A passivation layer on the outer surface stabilizes the structure. The device also has a source contact and a drain contact.

摘要翻译： 半导体器件具有包括第一半导体氧化物材料层的异质结构。 半导体氧化物材料的第二层形成在第一半导体氧化物层上，使得二维电子气在第一和第二材料之间的界面积聚。 外表面上的钝化层使结构稳定。 该器件还具有源触点和漏极触点。

公开(公告)号：US20080128595A1

公开(公告)日：2008-06-05

申请号：US11633323

申请日：2006-12-04

申请人： Peter Kiesel ,  Oliver Schmidt

发明人： Peter Kiesel ,  Oliver Schmidt

IPC分类号： H01J40/14

CPC分类号： H01L31/02165 ,  G01J3/02 ,  G01J3/0259 ,  G01J3/26 ,  G01J9/0246 ,  H01S3/0014 ,  H01S3/1305

摘要： To monitor light pulses from a light source, such as a laser, sense signals are provided to a photosensing component or array, causing photosensing during a series of one or more sense periods for the light pulse. Each light pulse can be provided through a transmission structure, such as a layered structure, that provides output light with an energy-dependent position on the photosensing component. A pulse's sensing results can be used to obtain a set of one or more differential quantities; for example, with a photosensing array, two cells of the array can be read out and compared. For a narrow band light pulse, a transmission structure can provide a spot on the photosensing component, and the light spot position can be sensed.

摘要翻译： 为了监测来自光源（例如激光器）的光脉冲，感测信号被提供给光敏元件或阵列，在光脉冲的一个或多个感测周期的系列期间引起光敏。 每个光脉冲可以通过诸如分层结构的传输结构提供，其提供光敏部件上的能量相关位置的输出光。 可以使用脉冲的感测结果来获得一个或多个差分量的集合; 例如，使用光敏阵列，可以读出并比较阵列的两个单元。 对于窄带光脉冲，透射结构可以在光敏元件上提供光点，并且可以感测光点位置。

公开(公告)号：US07291824B2

公开(公告)日：2007-11-06

申请号：US11316438

申请日：2005-12-22

申请人： Peter Kiesel ,  Oliver Schmidt ,  Oliver Wolst

发明人： Peter Kiesel ,  Oliver Schmidt ,  Oliver Wolst

IPC分类号： G01J3/50

CPC分类号： G01J1/4228 ,  G01J3/02 ,  G01J3/0213 ,  G01J3/26 ,  G01J3/2803 ,  G01N21/47 ,  G01N21/645 ,  G01N21/65 ,  G01N2021/4709 ,  G01N2021/6417 ,  H01L27/14601 ,  H01L27/14621

摘要： An integrated circuit (IC) includes a photosensor array, some cells of which are reference cells that photosense throughout an application's energy range, while other cells of which are subrange cells that photosense within respective subranges. For example, the subrange cells can receive photons in their respective subranges from a transmission structure that has laterally varying properties, such as due to varying optical thickness. The reference cells may be uncoated or may also receive photons through a transmission structure such as a gray filter. Subrange cells and reference cells may be paired in adjacent lines across the array, such as rows. Where photon emanation can vary along a path, quantities of incident photons photosensed by subrange cells along the path can be adjusted based on quantities photosensed by their paired reference cells, such as with normalization.

摘要翻译： 集成电路（IC）包括光电传感器阵列，其中一些单元是在整个应用的能量范围内照射的参考单元，而其他单元是在相应子范围内的光密度的子范围单元。 例如，子范围单元可以从具有横向变化的特性的传输结构接收其各自子范围内的光子，例如由于光学厚度的变化。 参考单元可以是未涂覆的，或者也可以通过诸如灰色滤波器的透射结构接收光子。 子范围单元格和参考单元可以在阵列中的相邻行中配对，例如行。 当光子发射可以沿着路径变化时，可以基于通过其配对参考细胞（例如通过归一化）照射的光量来调整沿着路径由子范围单元照射的入射光子的量。

公开(公告)号：US20070147726A1

公开(公告)日：2007-06-28

申请号：US11316241

申请日：2005-12-22

申请人： Peter Kiesel ,  Oliver Schmidt

发明人： Peter Kiesel ,  Oliver Schmidt

IPC分类号： G02B6/26

CPC分类号： G02B6/4215 ,  G01J3/02 ,  G01J3/0208 ,  G01J3/0216 ,  G01J3/0218 ,  G01J3/024 ,  G01J3/0256 ,  G01J3/26 ,  G01J3/2803 ,  G02B6/29358 ,  G02B6/4298

摘要： In detection and sensing, light is transmitted through layers or structures that vary laterally, such as with a constant gradient or a step-like gradient. After transmission, a position of a transmitted portion of the light or of output photons can be used to determine wavelength change or to obtain other photon energy information. The light can be received, for example, from a stimulus-wavelength converter such as an optical fiber sensor or another optical sensor. A component that propagates the light from the converter to a transmission structure can spread the light across the transmission structure's entry surface. At the exit surface of the transmission structure, photosensor components can sense or detect transmitted light or output photons, such as with a photosensor array or a position sensor. A photosensed quantity can be compared, such as with another photosensed quantity or with a calibration quantity. A differential quantity can be obtained using photosensed quantities.

摘要翻译： 在检测和感测中，光通过横向变化的层或结构透射，例如以恒定的梯度或阶梯状梯度。 在传输之后，可以使用光或输出光子的透射部分的位置来确定波长变化或获得其它光子能量信息。 光可以例如从诸如光纤传感器或另一光学传感器的刺激 - 波长转换器接收。 将来自转换器的光传播到透射结构的部件可以将光传播穿过透射结构的入射表面。 在透射结构的出射表面处，光电传感器部件可以感测或检测透射光或输出光子，例如用光电传感器阵列或位置传感器。 可以比较光照数量，例如与另一张照片数量或校准数量。 使用光照量可以获得差分量。