公开(公告)号：US20050287846A1

公开(公告)日：2005-12-29

申请号：US11151230

申请日：2005-06-14

申请人： Yoshitaka Dozen ,  Tomoko Tamura ,  Takuya Tsurume ,  Koji Dairiki

发明人： Yoshitaka Dozen ,  Tomoko Tamura ,  Takuya Tsurume ,  Koji Dairiki

IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L27/13 ,  H01L27/28 ,  H01L29/786 ,  H01R12/00

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/13 ,  H01L27/28 ,  H01L29/78603 ,  H01L2924/3511

摘要： Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. A feature of the invention is to use a metal film and a reactant having the metal film as a separation layer. An etching rate of the metal film or the reactant having metal is high, and a physical means in addition to a chemical means of etching the metal film or the reactant having metal can be used in the invention. Thus, the IDF chip can be manufactured more simply and easily in a short time.

摘要翻译： 预期由硅晶片形成的IC芯片的应用形式和需求将增加，并且需要进一步降低成本。 本发明的目的是提供一种IC芯片的结构和能够以较低成本生产的方法。 本发明的一个特征是使用具有金属膜的金属膜和反应物作为分离层。 金属膜或具有金属的反应物的蚀刻速率高，并且除了蚀刻金属膜的化学方法或具有金属的反应物之外的物理手段可以用于本发明。 因此，可以在短时间内更容易地制造IDF芯片。

公开(公告)号：US09559129B2

公开(公告)日：2017-01-31

申请号：US13468354

申请日：2012-05-10

申请人： Kyosuke Ito ,  Junya Maruyama ,  Takuya Tsurume ,  Shunpei Yamazaki

发明人： Kyosuke Ito ,  Junya Maruyama ,  Takuya Tsurume ,  Shunpei Yamazaki

IPC分类号： H01L27/13 ,  G06K19/077 ,  H01Q1/22 ,  H01Q7/00 ,  H01L27/12

CPC分类号： H01L27/1266 ,  G06K19/07749 ,  H01L27/1214 ,  H01L27/13 ,  H01L2224/95001 ,  H01Q1/2225 ,  H01Q7/00 ,  Y10T29/49018

摘要： The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein.

摘要翻译： 本发明提供了一种天线，其特征在于，形成在基膜上的导电体的粘合强度增加，并且包括该天线的半导体器件。 本发明还提供一种通过附着元件形成层和天线形成的具有高可靠性的半导体器件，其中元件形成层由于天线的结构而不被损坏。 半导体器件包括设置在衬底上的元件形成层和设置在元件形成层上的天线。 元件形成层和天线电连接。 天线具有基膜和导电体，其中导电体的至少一部分嵌入基膜中。 作为将导电体嵌入基膜中的方法，在基膜中形成凹部，在其中形成导电体。

公开(公告)号：US08956709B2

公开(公告)日：2015-02-17

申请号：US13474276

申请日：2012-05-17

申请人： Shunpei Yamazaki ,  Tomoya Aoyama ,  Takuya Tsurume ,  Takao Hamada

发明人： Shunpei Yamazaki ,  Tomoya Aoyama ,  Takuya Tsurume ,  Takao Hamada

IPC分类号： B05D5/12 ,  H01L51/00 ,  H01L51/56

CPC分类号： H01L51/0013 ,  C23C14/048 ,  H01L51/56 ,  Y10T428/12354 ,  Y10T428/12361 ,  Y10T428/12806 ,  Y10T428/24397

摘要： A first substrate including, on one of surfaces, a light absorption layer having metal nitride and a material layer which is formed so as to be in contact with the light absorption layer is provided; the surface of the first substrate on which the material layer is formed and a deposition target surface of a second substrate are disposed to face each other; and part of the material layer is deposited on the deposition target surface of the second substrate in such a manner that irradiation with laser light having a repetition rate of greater than or equal to 10 MHz and a pulse width of greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat part of the material layer which overlaps with the light absorption layer.

摘要翻译： 提供了在一个表面上包括具有金属氮化物的光吸收层和形成为与光吸收层接触的材料层的第一衬底; 其上形成有材料层的第一基板的表面和第二基板的沉积目标表面被设置为彼此面对; 并且所述材料层的一部分以这样的方式沉积在所述第二基板的沉积靶表面上，使得以具有大于或等于10MHz的重复率的激光照射并且脉冲宽度大于或等于100fs 并且从第一基板的另一表面侧执行小于或等于10ns，以选择性地加热与光吸收层重叠的材料层的一部分。

公开(公告)号：US08749063B2

公开(公告)日：2014-06-10

申请号：US11793199

申请日：2006-01-18

申请人： Takuya Tsurume

发明人： Takuya Tsurume

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/4763

CPC分类号： H01L29/78 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1266 ,  H01L27/13 ,  H01L2221/68359 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/01025 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An object of the prevent invention is to provide a semiconductor device having a conductive film, which sufficiently serves as an antenna, and a method for manufacturing thereof. The semiconductor device has an element formation layer including a transistor, which is provided over a substrate, an insulating film provided on the element formation layer, and a conductive film serving as an antenna, which is provided on the insulating film. The insulating film has a groove. The conductive film is provided along the surface of the insulating film and the groove. The groove of the insulating film may be provided to pass through the insulating film. Alternatively, a concave portion may be provided in the insulating film so as not to pass through the insulating film. A structure of the groove is not particularly limited, and for example, the groove can be provided to have a tapered shape, etc.

摘要翻译： 本发明的目的是提供一种具有充分用作天线的导电膜的半导体器件及其制造方法。 半导体器件具有包括设置在基板上的晶体管，设置在元件形成层上的绝缘膜和设置在绝缘膜上的用作天线的导电膜的元件形成层。 绝缘膜具有凹槽。 导电膜沿着绝缘膜和槽的表面设置。 可以提供绝缘膜的沟槽以通过绝缘膜。 或者，可以在绝缘膜中设置凹部以不通过绝缘膜。 槽的结构没有特别限制，例如可以将槽设置成具有锥形等。

公开(公告)号：US08698262B2

公开(公告)日：2014-04-15

申请号：US11213997

申请日：2005-08-30

申请人： Takuya Tsurume ,  Koji Dairiki ,  Naoto Kusumoto

发明人： Takuya Tsurume ,  Koji Dairiki ,  Naoto Kusumoto

IPC分类号： H01L21/14

CPC分类号： H01L21/6835 ,  H01L23/20 ,  H01L23/22 ,  H01L23/58 ,  H01L24/83 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/83851 ,  H01L2924/00011 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2224/29075 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention provides a new type wireless chip that can be used without being fixed on a product. Specifically, a wireless chip can have a new function by a sealing step. One feature of a wireless chip according to the present invention is to have a structure in which an integrated circuit is sealed by films. In particular, the films sealing the integrated circuit have a hollow structure; therefore the wireless chip can have a new function.

摘要翻译： 本发明提供了一种新型无线芯片，可以在不固定在产品上的情况下使用。 具体地说，无线芯片可以通过密封步骤具有新的功能。 根据本发明的无线芯片的一个特征是具有其中集成电路被膜密封的结构。 特别地，密封集成电路的膜具有中空结构; 因此无线芯片可以具有新功能。

公开(公告)号：US08558370B2

公开(公告)日：2013-10-15

申请号：US12892961

申请日：2010-09-29

申请人： Eiji Sugiyama ,  Yoshitaka Dozen ,  Hisashi Ohtani ,  Takuya Tsurume

发明人： Eiji Sugiyama ,  Yoshitaka Dozen ,  Hisashi Ohtani ,  Takuya Tsurume

IPC分类号： H01L23/44

CPC分类号： H01L27/1266 ,  H01L23/145 ,  H01L23/49855 ,  H01L27/105 ,  H01L27/115 ,  H01L27/1248 ,  H01L27/13 ,  H01L29/78603 ,  H01L2223/6677 ,  H01L2224/16225 ,  H01L2924/07811 ,  H01L2924/12032 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01Q1/2225 ,  H01Q1/2283 ,  H01L2924/00

摘要： The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a manufacturing method of a highly-reliable semiconductor device, which is not destroyed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element substrate having a semiconductor element formed using a single crystal semiconductor region, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element substrate and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are fixed together.

摘要翻译： 本发明提供一种不容易被外部局部压力损坏的半导体器件。 本发明还提供了一种高可靠性的半导体器件的制造方法，其不被外部局部压力破坏，而且产率高。 在具有使用单晶半导体区域形成的半导体元件的元件基板上设置有有机化合物或无机化合物的高强度纤维被有机树脂浸渍的结构体，进行加热和压接 由此制造半导体器件，元件基板和有机化合物的高强度纤维或无机化合物浸渍有机树脂的结构体固定在一起。

公开(公告)号：US08557699B2

公开(公告)日：2013-10-15

申请号：US12971918

申请日：2010-12-17

申请人： Takuya Tsurume ,  Yoshitaka Dozen

发明人： Takuya Tsurume ,  Yoshitaka Dozen

IPC分类号： H01L21/44

CPC分类号： H01L27/124 ,  H01L21/304 ,  H01L21/76898 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/13 ,  H01L29/78 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object of the present invention to provide a semiconductor device where, even in a case of stacking a plurality of semiconductor elements provided over a substrate, the stacked semiconductor elements can be electrically connected through the substrate, and a manufacturing method thereof. According to one feature of the present invention, a method for manufacturing a semiconductor device includes the steps of selectively forming a depression in an upper surface of a substrate or forming an opening which penetrates the upper surface through a back surface; forming an element group having a transistor so as to cover the upper surface of the substrate and the depression, or the opening; and exposing the element group formed in the depression or the opening by thinning the substrate from the back surface. A means for thinning the substrate can be performed by partially removing the substrate by performing grinding treatment, polishing treatment, etching by chemical treatment, or the like from the back surface of the substrate.

公开(公告)号：US08492246B2

公开(公告)日：2013-07-23

申请号：US13162611

申请日：2011-06-17

申请人： Koji Dairiki ,  Naoto Kusumoto ,  Takuya Tsurume

发明人： Koji Dairiki ,  Naoto Kusumoto ,  Takuya Tsurume

IPC分类号： H01L21/82

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L2221/68354

摘要： It is an object of the present invention to improve a factor which influences productivity such as variation caused by a characteristic defect of a circuit by thinning or production yield when an integrated circuit device in which a substrate is thinned is manufactured. A stopper layer is formed over one surface of a substrate, and an element is formed over the stopper layer, and then, the substrate is thinned from the other surface thereof. A method in which a substrate is ground or polished or a method in which the substrate is etched by chemical reaction is used as a method for thinning or removing the substrate.

摘要翻译： 本发明的目的在于，制造基板薄型化的集成电路装置时，通过减薄或提高成品率来提高影响生产率的因素，例如电路特性缺陷引起的变化。 在衬底的一个表面上形成阻挡层，并且在阻挡层上形成元件，然后从其另一个表面减薄衬底。 将基板研磨或抛光的方法或其中通过化学反应蚀刻基板的方法用作薄膜或去除基板的方法。

公开(公告)号：US08426293B2

公开(公告)日：2013-04-23

申请号：US11629861

申请日：2005-07-06

申请人： Takuya Tsurume ,  Koji Dairiki ,  Naoto Kusumoto

发明人： Takuya Tsurume ,  Koji Dairiki ,  Naoto Kusumoto

IPC分类号： H01L21/301

CPC分类号： H01L21/67132 ,  B32B37/226 ,  B32B38/0004 ,  B32B2305/342 ,  B32B2457/14 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/786 ,  H01L24/27 ,  H01L24/29 ,  H01L24/97 ,  H01L27/1203 ,  H01L27/1255 ,  H01L27/1266 ,  H01L2221/68313 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/83191 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19043 ,  H01L2924/00

摘要： It is an object of the present invention to decrease a unit cost of an IC chip and to achieve the mass-production of IC chips. According to the present invention, a substrate having no limitation in size, such as a glass substrate, is used instead of a silicon substrate. This achieves the mass-production and the decrease of the unit cost of the IC chip. Further, a thin IC chip is provided by grinding and polishing the substrate such as the glass substrate.

摘要翻译： 本发明的目的是降低IC芯片的单位成本并实现IC芯片的批量生产。 根据本发明，使用诸如玻璃基板等尺寸没有限制的基板来代替硅基板。 这实现了IC芯片的批量生产和单位成本的降低。 此外，通过研磨和研磨诸如玻璃基板的基板来提供薄的IC芯片。

公开(公告)号：US08372668B2

公开(公告)日：2013-02-12

申请号：US12729487

申请日：2010-03-23

申请人： Kaoru Hatano ,  Takaaki Nagata ,  Takuya Tsurume

发明人： Kaoru Hatano ,  Takaaki Nagata ,  Takuya Tsurume

IPC分类号： H01L21/00

CPC分类号： H01L51/56 ,  H01L27/3211 ,  H01L27/3246 ,  H01L2227/323 ,  H01L2227/326

摘要： In a manufacturing method of a light-emitting device, a separation layer is formed over a substrate; a semiconductor circuit element layer and first electrodes are formed over the separation layer; a partition wall overlapping with end portions of the first electrodes is formed; and organic material layers are formed over the first electrodes. Organic material layers emitting light of the same color are arranged adjacent to each other in a line and extend in a first direction. A second electrode is formed using a material having high adhesiveness to the partition wall over the organic material layers to be in contact with the partition wall. A stack structure including the semiconductor circuit element layer, the first electrodes, the partition wall, the organic material layers, and the second electrode is separated from the substrate using the separation layer in a second direction perpendicular to the first direction.

摘要翻译： 在发光装置的制造方法中，在基板上形成分离层， 半导体电路元件层和第一电极形成在分离层上; 形成与第一电极的端部重叠的分隔壁; 并且在第一电极上形成有机材料层。 发射相同颜色的光的有机材料层以一条线彼此相邻布置并沿第一方向延伸。 第二电极使用与有机材料层上的隔壁具有高粘合性的材料形成，以与分隔壁接触。 在垂直于第一方向的第二方向上，使用分离层将包括半导体电路元件层，第一电极，分隔壁，有机材料层和第二电极的堆叠结构与基板分离。