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    Semiconductor device, display device, and electronic appliance
    94.
    发明授权
    Semiconductor device, display device, and electronic appliance 有权
    半导体装置，显示装置和电子设备

    公开(公告)号：US09406808B2

    公开(公告)日：2016-08-02

    申请号：US13671638

    申请日：2012-11-08

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

    IPC: H01L29/04 ,  H01L29/786 ,  H01L27/12

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/78696

    Abstract: In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.

    Abstract translation: 在使用氧化物半导体形成沟道形成区域的沟道保护薄膜晶体管中，使用通过热处理脱水或脱氢的氧化物半导体层作为有源层，包括纳米晶体的晶体区域包含在表面 并且其余部分是无定形的或由非晶/非晶体和微晶体的混合物形成，其中非晶区域用微晶点缀。 通过使用具有这种结构的氧化物半导体层，可以防止由于进入水分或从表面部分去除氧气或从表面部分排出而引起的n型变化和产生寄生通道，并且与源极接触电阻 可以减少漏电极。

    Semiconductor device
    95.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09293545B2

    公开(公告)日：2016-03-22

    申请号：US14451680

    申请日：2014-08-05

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Daisuke Kawae

    IPC: H01L29/786 ,  H01L29/417 ,  H01L51/05 ,  H01L29/49 ,  H01L51/10 ,  H01L27/12 ,  H01L21/28 ,  H01L21/02

    CPC classification number: H01L29/41733 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0508 ,  H01L51/0512 ,  H01L51/0545 ,  H01L51/105

    Abstract: A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.

    Abstract translation: 下栅极薄膜晶体管中的源电极和漏电极之间可能发生的电场浓度被放宽并且抑制了开关特性的劣化的结构及其制造方法。 制造在源电极和漏电极上设置氧化物半导体层的底栅薄膜晶体管，与氧化物半导体层接触的源电极的侧表面的角度和角度;角度和角度; 与氧化物半导体层接触的漏电极的侧面的两个面积分别被设定为大于或等于20°且小于90°，​​使得从上边缘到下边缘的距离 每个电极的侧表面增加。

    Method of manufacturing semiconductor device having oxide semiconductor layer
    97.
    发明授权
    Method of manufacturing semiconductor device having oxide semiconductor layer 有权
    制造具有氧化物半导体层的半导体器件的方法

    公开(公告)号：US09196713B2

    公开(公告)日：2015-11-24

    申请号：US14471632

    申请日：2014-08-28

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Kengo Akimoto

    IPC: H01L21/02 ,  H01L29/66 ,  H01L29/49 ,  H01L29/786

    CPC classification number: H01L29/78696 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/02565 ,  H01L29/247 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

    Abstract: An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.

    Abstract translation: 本发明的目的是提供一种薄膜晶体管的有利的界面特性，该薄膜晶体管包括氧化物半导体层，而不混入杂质如水分。 另一个目的是提供一种包括具有优异的电特性和高可靠性的薄膜晶体管的半导体器件，以及可以以高生产率制造半导体器件的方法。 要点是在栅极绝缘层的表面进行氧自由基处理。 因此，在栅极绝缘层与半导体层之间的界面处存在氧浓度的峰值，并且栅极绝缘层的氧浓度具有浓度梯度。 氧浓度朝向栅极绝缘层和半导体层之间的界面增加。

    Oxide semiconductor film and semiconductor device
    98.
    发明授权
    Oxide semiconductor film and semiconductor device 有权
    氧化物半导体膜和半导体器件

    公开(公告)号：US09196690B2

    公开(公告)日：2015-11-24

    申请号：US14483662

    申请日：2014-09-11

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tatsuya Honda ,  Hiroshi Kanemura ,  Kengo Akimoto ,  Suzunosuke Hiraishi

    IPC: H01L29/38 ,  H01L29/786 ,  H01L27/15 ,  H01L27/32 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66

    CPC classification number: H01L29/247 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

    Abstract: Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film.

    Abstract translation: 提供了具有更稳定的电特性并且基本上由氧化铟锌组成的氧化物半导体膜。 此外，提供了通过使用氧化物半导体膜具有稳定的电特性的高度可靠的半导体器件。 基本上由氧化铟锌组成的氧化物半导体膜具有六边形晶体结构，其中ab平面基本上平行于氧化物半导体膜的表面，并且其中ab平面基本上平行于氧化物表面的菱方晶体结构 半导体膜。

    Display device
    99.
    发明授权
    Display device 有权
    显示设备

    公开(公告)号：US09130067B2

    公开(公告)日：2015-09-08

    申请号：US13780138

    申请日：2013-02-28

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

    IPC: H01L29/72 ,  H01L33/00 ,  H01L27/02 ,  H01L27/12

    CPC classification number: G02F1/136204 ,  H01L27/0248 ,  H01L27/1225 ,  H01L27/124 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

    Abstract translation: 为了利用包括氧化物半导体的显示装置的特性，需要具有适当结构和占用面积小的保护电路等。 保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 栅绝缘膜上的第一氧化物半导体层; 覆盖与第一氧化物半导体层的沟道形成区重叠的区域的沟道保护层; 以及通过层叠导电层和第二氧化物半导体层并在第一氧化物半导体层上形成的第一布线层和第二布线层。 栅电极连接到扫描线或信号线，第一布线层或第二布线层直接连接到栅电极。

    Semiconductor device and method for manufacturing the same
    100.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US09112038B2

    公开(公告)日：2015-08-18

    申请号：US14282305

    申请日：2014-05-20

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hideaki Kuwabara ,  Kengo Akimoto ,  Toshinari Sasaki

    IPC: H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  H01L29/45

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/24 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78696

    Abstract: An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized.

    Abstract translation: 目的是增加包括氧化物半导体的薄膜晶体管的场效应迁移率。 另一个目的是稳定薄膜晶体管的电特性。 在包括氧化物半导体层的薄膜晶体管中，在氧化物半导体层上形成具有比氧化物半导体更高的导电性的半导体层或导电层，由此可以提高薄膜晶体管的场效应迁移率。 此外，通过在氧化物半导体层和薄膜晶体管的保护绝缘层之间形成具有比氧化物半导体更高的导电性的半导体层或导电层，防止氧化物半导体层的组成变化或膜质量的劣化 ，使得薄膜晶体管的电特性能够稳定。

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