公开(公告)号：US20170104089A1

公开(公告)日：2017-04-13

申请号：US15286892

申请日：2016-10-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Yasuharu HOSAKA ,  Yasutaka NAKAZAWA ,  Takashi HAMOCHI ,  Takahiro SATO ,  Shunpei YAMAZAKI

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L21/383 ,  H01L23/31 ,  H01L23/29 ,  H01L29/40 ,  H01L29/49

CPC classification number: H01L29/66969 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/383 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/24 ,  H01L29/408 ,  H01L29/4908 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/7869 ,  H01L29/78696

Abstract: A change in electrical characteristics of a semiconductor device including an oxide semiconductor is prevented, and the reliability of the semiconductor device is improved. An oxide semiconductor is formed over a substrate; an insulator is formed over the oxide semiconductor; a metal oxide is formed over the insulator; a conductor is formed over the metal oxide; a portion of the oxide semiconductor is exposed by removing the conductor, the metal oxide, and the insulator over the oxide semiconductor; plasma treatment is performed on a surface of the exposed portion of the oxide semiconductor; and a nitride insulator is formed over the exposed portion of the oxide semiconductor and over the conductor. The plasma treatment is performed in a mixed atmosphere of an argon gas and a nitrogen gas.

公开(公告)号：US20160268441A1

公开(公告)日：2016-09-15

申请号：US15161329

申请日：2016-05-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA

IPC: H01L29/786 ,  G02F1/1339 ,  G02F1/1333 ,  G02F1/1368 ,  H01L27/12 ,  G02F1/1335

CPC classification number: H01L29/78606 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/13394 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/1233 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/45 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device including a transistor in which an oxide semiconductor is used and on-state current is high. In a semiconductor device including a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion, the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure in which conductive films serving as a gate electrode, a source electrode, and a drain electrode do not overlap. Furthermore, in an oxide semiconductor film, an impurity element is contained in a region which does not overlap with the gate electrode, the source electrode, and the drain electrode.

公开(公告)号：US20160141397A1

公开(公告)日：2016-05-19

申请号：US15002826

申请日：2016-01-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasutaka NAKAZAWA ,  Masami JINTYOU ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Takuya HIROHASHI ,  Shunsuke ADACHI

IPC: H01L29/66 ,  H01L21/473 ,  H01L21/3205 ,  H01L21/4757 ,  H01L29/786 ,  H01L21/3213

CPC classification number: H01L29/78696 ,  H01L21/32051 ,  H01L21/3213 ,  H01L21/473 ,  H01L21/4757 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.

Abstract translation: 提供一种半导体器件，其包括具有稳定的电特性或高可靠性的氧化物半导体的沟道形成区中具有减少的氧空位数的晶体管。 在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成氧化物半导体层; 通过溅射法在氧化物半导体层上形成氧化物层，以形成包含氧化物半导体层和氧化物层的堆叠层氧化膜; 堆叠层氧化膜被加工成预定的形状; 在叠层氧化膜上形成含有Ti作为主要成分的导电膜; 蚀刻导电膜以形成源极和漏极以及背沟道侧的凹陷部; 并且与源极和漏极接触的堆叠层氧化膜的部分通过热处理而变为n型。

公开(公告)号：US20160035567A1

公开(公告)日：2016-02-04

申请号：US14878399

申请日：2015-10-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H01L21/02 ,  H01L21/306 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3248 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US20150270404A1

公开(公告)日：2015-09-24

申请号：US14733489

申请日：2015-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H01L29/786 ,  H01L29/04 ,  G02F1/1362 ,  H01L27/12 ,  H01L27/32 ,  G02F1/1368 ,  H01L29/24 ,  H01L29/423

CPC classification number: H01L29/7869 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3248 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

Abstract translation: 晶体管包括层叠有氧化物半导体膜和氧化膜的多层膜，栅极电极和栅极绝缘膜。 多层膜与栅电极重叠，栅极绝缘膜介于其间。 多层膜具有在氧化物半导体膜的底面和氧化物半导体膜的侧面之间具有第一角度的形状，以及氧化物膜的底面与氧化膜的侧面之间的第二角度。 第一个角度是锐角并小于第二个角度。 此外，制造包括这种晶体管的半导体器件。

公开(公告)号：US20150270403A1

公开(公告)日：2015-09-24

申请号：US14659792

申请日：2015-03-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro KATAYAMA ,  Yasutaka NAKAZAWA ,  Masatoshi YOKOYAMA ,  Masahiko HAYAKAWA ,  Kenichi OKAZAKI ,  Shunsuke KOSHIOKA

IPC: H01L29/786 ,  H01L29/04 ,  G09G5/00 ,  H01L27/12 ,  G06F3/047 ,  H01L29/24 ,  H01L29/45

CPC classification number: H01L29/7869 ,  G06F3/041 ,  G09G3/20 ,  G09G3/3674 ,  G09G3/3677 ,  G09G3/3685 ,  G09G3/3688 ,  G09G5/003 ,  G09G2300/0404 ,  G09G2300/0426 ,  G09G2310/0267 ,  G09G2310/0275 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/78606

Abstract: A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1×1015 molecules/cm3 by thermal desorption spectroscopy.

Abstract translation: 提供一种包括晶体管和电连接到晶体管的布线的半导体器件，其中由于其特定结构而具有优异的电特性。 第一导电膜，第一导电膜上的第一绝缘膜，第一绝缘膜上的第二导电膜，第二导电膜上的第二绝缘膜，通过开口电连接到第一导电膜的第三导电膜 在第一绝缘膜和第二绝缘膜中，并且在第三导电膜上设置第三绝缘膜。 第三导电膜包括铟，锡和氧，第三绝缘膜包括硅和氮，并且通过热解吸光谱法从第三绝缘膜释放的氨分子的数量小于或等于1×1015分子/ cm 3。

公开(公告)号：US20150187878A1

公开(公告)日：2015-07-02

申请号：US14574424

申请日：2014-12-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786

CPC classification number: H01L29/78606 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/13394 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/1233 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/45 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device including a transistor in which an oxide semiconductor is used and on-state current is high. In a semiconductor device including a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion, the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure in which conductive films serving as a gate electrode, a source electrode, and a drain electrode do not overlap. Furthermore, in an oxide semiconductor film, an impurity element is contained in a region which does not overlap with the gate electrode, the source electrode, and the drain electrode.

Abstract translation: 为了提供包括其中使用氧化物半导体的晶体管和导通电流高的半导体器件。 在包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管的半导体器件中，第一晶体管和第二晶体管具有不同的结构。 此外，第一晶体管和第二晶体管是具有顶栅结构的晶体管，其中用作栅电极，源电极和漏电极的导电膜不重叠。 此外，在氧化物半导体膜中，在与栅电极，源电极和漏电极不重叠的区域中含有杂质元素。

公开(公告)号：US20140151686A1

公开(公告)日：2014-06-05

申请号：US14090244

申请日：2013-11-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasutaka NAKAZAWA ,  Masami JINTYOU ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Takuya HIROHASHI ,  Shunsuke ADACHI

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/32051 ,  H01L21/3213 ,  H01L21/473 ,  H01L21/4757 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.

Abstract translation: 提供一种半导体器件，其包括具有稳定的电特性或高可靠性的氧化物半导体的沟道形成区中具有减少的氧空位数的晶体管。 在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成氧化物半导体层; 通过溅射法在氧化物半导体层上形成氧化物层，以形成包含氧化物半导体层和氧化物层的堆叠层氧化膜; 堆叠层氧化膜被加工成预定的形状; 在叠层氧化膜上形成含有Ti作为主要成分的导电膜; 蚀刻导电膜以形成源极和漏极以及背沟道侧的凹陷部; 并且与源极和漏极接触的堆叠层氧化膜的部分通过热处理而变为n型。