利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

103 条记录 (耗时 0.031 秒)

    Method for manufacturing semiconductor device
    94.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07365004B2

    公开(公告)日：2008-04-29

    申请号：US11033380

    申请日：2005-01-12

    申请人： Hiroki Adachi ,  Kazuo Nishi ,  Masato Yonezawa ,  Yukihiro Isobe ,  Hisato Shinohara

    发明人： Hiroki Adachi ,  Kazuo Nishi ,  Masato Yonezawa ,  Yukihiro Isobe ,  Hisato Shinohara

    IPC分类号： H01L21/4763

    CPC分类号： H01L31/03921 ,  H01L31/035281 ,  H01L31/046 ,  H01L31/0463 ,  Y02E10/50

    摘要： The invention is aimed to prevent that fall of characteristic of a solar battery and producing yield caused by particles of powder condition generating from working part at laser beam process in the method producing the solar battery by laser beam process. The constitution of the invention is characterized by comprising: a first step forming the lower electrode and the semiconductor layer on the insulating substrate by laminating; a second step forming a protective film on surface of the semiconductor; a third step forming an opening portion at the semiconductor layer, or the semiconductor layer and the lower electrode by laser beam process after the second step; and a fourth step removing the protective film.

    摘要翻译： 本发明旨在防止太阳能电池的特性的下降，并且通过激光束工艺在产生太阳能电池的方法中，在激光束工艺产生的粉末状态的颗粒产生的产率产生。 本发明的结构的特征在于包括：通过层压在绝缘基板上形成下电极和半导体层的第一步骤; 在半导体的表面上形成保护膜的第二步骤; 在第二步骤之后通过激光束处理在半导体层形成开口部分的第三步骤或半导体层和下部电极; 以及除去保护膜的第四步骤。

    PHOTOELECTRIC CONVERSION DEVICE, MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR DEVICE
    95.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE, MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR DEVICE 有权
    光电转换装置及其半导体装置的制造方法

    公开(公告)号：US20060260675A1

    公开(公告)日：2006-11-23

    申请号：US11383645

    申请日：2006-05-16

    申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

    发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

    IPC分类号： H01L31/00

    CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

    摘要： The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.

    摘要翻译： 本发明提供抑制漏电流的光电转换装置。 本发明的光电转换装置包括：基板上的第一电极; 光电转换层，包括具有一个导电性的第一导电层，第二半导体层和具有与第一电极上的第二半导体层的一个导电率相反的导电性的第三半导体层，其中第一电极的端部为 覆盖第一半导体层; 在所述第三半导体膜上形成绝缘膜和在所述绝缘膜上与所述第三半导体膜电绝缘膜电连接的第二电极，并且其中所述第二半导体层的一部分和所述第三半导体的一部分 在光电转换层的未被绝缘膜覆盖的区域中去除层。

    Solar cell and method of adjusting color of the same
    96.
    发明申请
    Solar cell and method of adjusting color of the same 有权

    公开(公告)号：US20060219293A1

    公开(公告)日：2006-10-05

    申请号：US11362913

    申请日：2006-02-28

    申请人： Hisao Morooka ,  Takeshi Echizenya ,  Hirokazu Fujioka ,  Saki Takahashi ,  Kazuo Nishi

    发明人： Hisao Morooka ,  Takeshi Echizenya ,  Hirokazu Fujioka ,  Saki Takahashi ,  Kazuo Nishi

    IPC分类号： H01L31/00

    CPC分类号： H01L31/075 ,  H01L31/022425 ,  H01L31/056 ,  Y02E10/52 ,  Y02E10/548

    摘要： The present invention provides a solar cell whose external color can be adjusted so that redness is suppressed. In the case where a photoelectric conversion layer contains amorphous silicon, an optical absorption layer is provided between the photoelectric conversion layer and a reflecting electrode layer. The optical absorption layer has a light absorbing property mainly in a long wavelength range, while the photoelectric conversion layer (amorphous silicon) has a selective light absorbing property mainly in a short/medium wavelength range. Incident light (solar light) passed through the photoelectric conversion layer further passes through the optical absorption layer and, after that, is reflected by the reflecting electrode layer. That is, remaining light of the incident light absorbed by the optical absorption layer and the photoelectric conversion layer is reflected by the reflecting electrode layer. Consequently, redness of the reflection light can be suppressed more than in the case where the optical absorption layer is not provided between the photoelectric conversion layer and the reflecting electrode layer.

    Method of making iron silicide and method of making photoelectric transducer
    97.
    发明授权
    Method of making iron silicide and method of making photoelectric transducer 失效
    制造硅化铁的方法和制造光电传感器的方法

    公开(公告)号：US06949463B2

    公开(公告)日：2005-09-27

    申请号：US10756299

    申请日：2004-01-14

    申请人： Hisao Morooka ,  Hiroshi Yamada ,  Kazuo Nishi

    发明人： Hisao Morooka ,  Hiroshi Yamada ,  Kazuo Nishi

    IPC分类号： H01L31/04 ,  C23C16/42 ,  C23C16/505 ,  H01L21/285 ,  H01L21/44

    CPC分类号： C23C16/42 ,  C23C16/505 ,  H01L21/28556 ,  Y02E10/548

    摘要： A solar cell comprises a substrate, and a metal electrode layer, a p-i-n junction, and a transparent electrode layer which are successively laminated on the substrate. The p-i-n junction comprises an n layer, an i layer, and a p layer which are laminated in this order. The i layer is made of an amorphous iron silicide film containing hydrogen in accordance with the present invention, and is formed on the n layer by supplying an iron vapor into a plasma of a material gas in which a silane type gas and a hydrogen gas are mixed. In the i layer, dangling bonds of silicon atoms and/or iron atoms are terminated with hydrogen, whereby a number of trap levels which may occur in the amorphous iron silicide film are eliminated.

    摘要翻译： 太阳能电池包括依次层压在基板上的基板和金属电极层，p-i-n结和透明电极层。 p-i-n结包括依次层叠的n层，i层和p层。 i层由根据本发明的含有氢的非晶硅化硅膜制成，并且通过将铁蒸气供给到硅烷型气体和氢气的原料气体的等离子体中而形成在n层上 混合 在i层中，硅原子和/或铁原子的悬挂键用氢终止，由此可以消除在非晶硅化铁膜中可能发生的多个陷阱水平。

    Photovoltaic device
    99.
    发明申请
    Photovoltaic device 审中-公开
    光伏装置

    公开(公告)号：US20050087225A1

    公开(公告)日：2005-04-28

    申请号：US10500934

    申请日：2003-01-10

    申请人： Hisao Morooka ,  Kazuo Nishi

    发明人： Hisao Morooka ,  Kazuo Nishi

    IPC分类号： H01L31/075 ,  H01L31/00

    CPC分类号： H01L31/075 ,  Y02E10/548

    摘要： On a substrate 1 is formed a first transparent electrode layer 3, on which a p-type semiconductor film 5, an i-type semiconductor film 6 and an n-type semiconductor film 7 are successively formed to constitute an electric power generating layer. On the n-type semiconductor film 7 is formed a second transparent electrode layer 8, on which a back electrode layer 9 is formed. Moreover, an intermediate layer 4 made of a given material is formed between the first transparent electrode layer 3 and the p-type semiconductor film 5 to complete a photovoltaic element 40 with high electric power generating efficiency (conversion efficiency).

    摘要翻译： 在基板1上形成有第一透明电极层3，其上依次形成p型半导体膜5，i型半导体膜6和n型半导体膜7以构成发电层。 在n型半导体膜7上形成有形成背面电极层9的第二透明电极层8。 此外，在第一透明电极层3和p型半导体膜5之间形成由给定材料制成的中间层4，以完成具有高发电效率（转换效率）的光电元件40。

    Photovoltaic element
    100.
    发明授权
    Photovoltaic element 有权
    光伏元件

    公开(公告)号：US06566594B2

    公开(公告)日：2003-05-20

    申请号：US09824214

    申请日：2001-04-03

    申请人： Tatsuji Sano ,  Hisao Morooka ,  Kazuo Nishi

    发明人： Tatsuji Sano ,  Hisao Morooka ,  Kazuo Nishi

    IPC分类号： H01L31075

    CPC分类号： H01L31/075 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    摘要： In a photovoltaic element according to the present invention, a first transparent conductive film, a second transparent conductive film, a p-type semiconductor film, an intrinsic semiconductor layer, a n-type semiconductor layer and a backside electrode are stacked in turn on a transparent substrate. Then, an intermediate layer is provided between the second transparent conductive film and the p-type semiconductor layer so as to cover the first transparent conductive film and the second transparent conductive film.

    摘要翻译： 在根据本发明的光电元件中，依次将第一透明导电膜，第二透明导电膜，p型半导体膜，本征半导体层，n型半导体层和背面电极堆叠在 透明基板。 然后，在第二透明导电膜和p型半导体层之间设置中间层，以覆盖第一透明导电膜和第二透明导电膜。