利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

100 条记录 (耗时 0.037 秒)

    Articles for polishing semiconductor substrates
    92.
    发明授权
    Articles for polishing semiconductor substrates 失效

    公开(公告)号：US07059948B2

    公开(公告)日：2006-06-13

    申请号：US10026854

    申请日：2001-12-20

    申请人： Shijian Li ,  Llang-Yuh Chen ,  Alain Duboust

    发明人： Shijian Li ,  Llang-Yuh Chen ,  Alain Duboust

    IPC分类号： B24D11/00

    CPC分类号： B24B37/24 ,  B23H5/08 ,  B24B57/02

    摘要： Methods, articles of manufacture, and apparatus are provided for depositing a layer, planarizing a layer, or combinations thereof, a material layer on a substrate. In one embodiment, an article of manufacture is provided for polishing a substrate, comprising a polishing article having a polishing surface, a plurality of passages formed through the polishing article for flow of material therethrough, and a plurality of grooves disposed in the polishing surface. The article of manufacture may be used in a processing system. The article of manufacture may be used in a method for processing a substrate, comprising positioning the substrate in an electrolyte solution containing a polishing article, optionally depositing a material on the substrate by an electrochemical deposition method, and polishing the substrate with the polishing article.

    TRANSFER CHAMBER METROLOGY FOR IMPROVED DEVICE YIELD
    94.
    发明申请
    TRANSFER CHAMBER METROLOGY FOR IMPROVED DEVICE YIELD 有权
    用于改进设备输出的转换室规格

    公开(公告)号：US20120118224A1

    公开(公告)日：2012-05-17

    申请号：US13230573

    申请日：2011-09-12

    申请人： David P. Bour ,  Alain Duboust ,  Alexey Goder

    发明人： David P. Bour ,  Alain Duboust ,  Alexey Goder

    IPC分类号： C30B25/16 ,  C30B25/08 ,  C30B25/10 ,  C23C16/06 ,  C23C16/52

    CPC分类号： H01L33/0075 ,  C30B25/16 ,  C30B29/40 ,  G01K11/20 ,  G01K2217/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/67196 ,  H01L21/67248 ,  H01L22/12 ,  H01L22/26 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

    摘要： Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL measurement of a group III-V film following growth while a substrate at an elevated temperature is in a transfer chamber of a multi-chamber cluster tool. In other embodiments, a film thickness measurement, a contactless resistivity measurement, and a particle and/or roughness measure is performed while the substrate is disposed in the transfer chamber. One or more of the measurements performed in the transfer chamber are temperature corrected to room temperature by estimating the elevated temperature based on emission from a GaN base layer disposed below the group III-V film. In other embodiments, temperature correction is based on an absorbance band edge of the GaN base layer determined from collected white light reflectance spectra. Temperature corrected metrology is then used to control growth processes.

    摘要翻译： 用于控制外延生长参数的设备和方法，例如在制造发光二极管（LED）期间。 实施例包括生长后的III-V族薄膜的PL测量，而在高温下的基底处于多腔聚集工具的转移室中。 在其它实施例中，在衬底设置在传送室中的同时，执行膜厚度测量，非接触电阻率测量以及颗粒和/或粗糙度测量。 通过基于从设置在III-V族III膜以下的GaN基底层的发射来估计升高的温度，在传送室中执行的一个或多个测量值被温度校正到室温。 在其他实施例中，温度校正基于由所收集的白光反射光谱确定的GaN基底层的吸收带边缘。 然后使用温度校正计量来控制生长过程。

    APPARATUS HAVING IMPROVED SUBSTRATE TEMPERATURE UNIFORMITY USING DIRECT HEATING METHODS
    95.
    发明申请
    APPARATUS HAVING IMPROVED SUBSTRATE TEMPERATURE UNIFORMITY USING DIRECT HEATING METHODS 审中-公开
    使用直接加热方法改善基板温度均匀性的装置

    公开(公告)号：US20120108081A1

    公开(公告)日：2012-05-03

    申请号：US13282914

    申请日：2011-10-27

    申请人： Donald J.K. OLGADO ,  Tuan Anh (Mike) Nguyen ,  Alain Duboust

    发明人： Donald J.K. OLGADO ,  Tuan Anh (Mike) Nguyen ,  Alain Duboust

    IPC分类号： H01L21/26 ,  F27D11/12

    CPC分类号： H01L21/67115 ,  H01L21/68764 ,  H01L21/68771

    摘要： Embodiments of the present invention generally relate to an apparatus and methods for uniformly heating substrates in a processing chamber. In one embodiment, an apparatus generally includes a substrate supporting structure that is able to help minimize the temperature variation across each of the substrates during thermal processing. In one configuration, a substrate supporting structure is adapted to selectively support a substrate carrier to control the heat lost from regions of each of the substrates disposed on the substrate carrier. The substrate supporting structure is thus configured to provide a uniform temperature profile across each of the plurality of substrates during processing.

    摘要翻译： 本发明的实施例一般涉及用于在处理室中均匀加热基板的装置和方法。 在一个实施例中，设备通常包括基板支撑结构，其能够帮助最小化热处理期间每个基板的温度变化。 在一种配置中，衬底支撑结构适于选择性地支撑衬底载体以控制从布置在衬底载体上的每个衬底的区域中损失的热量。 因此，衬底支撑结构被构造成在处理期间提供跨越多个衬底中的每一个的均匀的温度分布。

    SLURRY COMPOSITION FOR GST PHASE CHANGE MEMORY MATERIALS POLISHING
    98.
    发明申请
    SLURRY COMPOSITION FOR GST PHASE CHANGE MEMORY MATERIALS POLISHING 审中-公开
    用于消费品相变化记忆材料抛光的浆料组合物

    公开(公告)号：US20100130013A1

    公开(公告)日：2010-05-27

    申请号：US12622251

    申请日：2009-11-19

    申请人： Feng Q. Liu ,  Alain Duboust ,  Wen-Chiang Tu ,  Chenhao Ge ,  Kun Xu ,  Yuchun Wang ,  Yufei Chen

    发明人： Feng Q. Liu ,  Alain Duboust ,  Wen-Chiang Tu ,  Chenhao Ge ,  Kun Xu ,  Yuchun Wang ,  Yufei Chen

    IPC分类号： H01L21/306 ,  H01L21/304 ,  C09K13/06 ,  C11D3/20

    CPC分类号： C11D3/3947 ,  C09G1/02 ,  C09K3/1463 ,  C11D7/08 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

    摘要： A CMP method for polishing a phase change alloy on a substrate surface including positioning the substrate comprising a phase change alloy material on a platen containing a polishing pad and delivering a polishing slurry to the polishing pad. The polishing slurry includes colloidal particles with a particle size less than 60 nm, in an amount between 0.2% to about 10% by weight of slurry, a pH adjustor, a chelating agent, an oxidizing agent in an amount less than 1% by weight of slurry, and polyacrylic acid. The substrate on the platen is polished to remove a portion of the phase change alloy. A rinsing solution for rinsing the substrate on the platen includes deionized water and at least one component in the deionized water where the component selected from the group consisting of polyethylene imine, polyethylene glycol, polyacrylic amide, alcohol ethoxylates, polyacrylic acid, an azole containing compound, benzo-triazole, and combinations thereof.

    摘要翻译： 一种用于在衬底表面上抛光相变合金的CMP方法，包括将包含相变合金材料的衬底定位在包含抛光垫的压板上并将抛光浆料输送到抛光垫。 抛光浆料包括粒度小于60nm的胶体颗粒，其浆料重量为0.2％至约10％，pH调节剂，螯合剂，小于1重量％的氧化剂 的浆料和聚丙烯酸。 抛光台板上的基板以除去一部分相变合金。 用于冲洗台板上的基材的冲洗溶液包括去离子水和去离子水中的至少一种组分，其中选自聚乙烯亚胺，聚乙二醇，聚丙烯酰胺，醇乙氧基化物，聚丙烯酸，含唑化合物 ，苯并三唑及其组合。

    Method and composition for electrochemical mechanical polishing processing
    99.
    发明授权
    Method and composition for electrochemical mechanical polishing processing 失效
    电化学机械抛光加工的方法和组成

    公开(公告)号：US07390429B2

    公开(公告)日：2008-06-24

    申请号：US11312823

    申请日：2005-12-19

    申请人： Feng Q. Liu ,  Tianbao Du ,  Alain Duboust ,  Wei-Yung Hsu

    发明人： Feng Q. Liu ,  Tianbao Du ,  Alain Duboust ,  Wei-Yung Hsu

    IPC分类号： C09K13/00 ,  C09K13/04 ,  C09K13/06

    CPC分类号： H01L21/32125 ,  B23H5/08 ,  C25F3/02 ,  H01L21/7684

    摘要： A method of processing a substrate having a conductive material layer disposed thereon is provided which includes positioning the substrate in a process apparatus and supplying a first polishing composition between to the substrate. The polishing composition comprises a first chelating agent, a second chelating agent, a first corrosion inhibitor, a second corrosion inhibitor, a suppressor, a solvent, and an inorganic acid based electrolyte to provide a pH between about 3 and about 10.

    摘要翻译： 提供一种处理其上设置有导电材料层的基板的方法，其包括将基板定位在处理装置中并将第一抛光组合物提供到基板之间。 抛光组合物包括第一螯合剂，第二螯合剂，第一腐蚀抑制剂，第二腐蚀抑制剂，抑制剂，溶剂和无机酸基电解质，以提供约3至约10的pH。

    Electrochemical processing with dynamic process control
    100.
    发明申请
    Electrochemical processing with dynamic process control 审中-公开
    电化学处理与动态过程控制

    公开(公告)号：US20070158201A1

    公开(公告)日：2007-07-12

    申请号：US11326646

    申请日：2006-01-06

    申请人： Eashwer Kollata ,  Antoine Manens ,  Pierre Fontarensky ,  Gregory Lee ,  Alain Duboust

    发明人： Eashwer Kollata ,  Antoine Manens ,  Pierre Fontarensky ,  Gregory Lee ,  Alain Duboust

    IPC分类号： C25D21/12

    CPC分类号： C25D5/22 ,  B23H5/08 ,  C25D5/18 ,  C25D21/12

    摘要： Embodiments of the invention generally provide a method for electrochemically removing material from a substrate. In one embodiment, a method for electrochemically processing a substrate includes determining a process target for a substrate; electrochemically processing the substrate; determining a deviation between expected and actual process indicators while processing, and changing at least one process variable during processing in response to the variation.

    摘要翻译： 本发明的实施方案通常提供一种用于从基底电化学去除材料的方法。 在一个实施例中，用于电化学处理衬底的方法包括确定衬底的工艺目标; 电化学处理基板; 在处理期间确定预期和实际过程指标之间的偏差，以及响应于变化在处理期间改变至少一个过程变量。