公开(公告)号：US12148661B2

公开(公告)日：2024-11-19

申请号：US17676627

申请日：2022-02-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Wei Wu ,  Ying-Ching Shih ,  Szu-Wei Lu ,  Jing-Cheng Lin ,  Long Hua Lee

IPC: H01L21/768 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/367

Abstract: A method of forming a semiconductor device includes attaching a metal foil to a carrier, the metal foil being pre-made prior to attaching the metal foil; forming a conductive pillar on a first side of the metal foil distal the carrier; attaching a semiconductor die to the first side of the metal foil; forming a molding material around the semiconductor die and the conductive pillar; and forming a redistribution structure over the molding material.

公开(公告)号：US12080617B2

公开(公告)日：2024-09-03

申请号：US18194876

申请日：2023-04-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Wei Chen ,  Li-Chung Kuo ,  Ying-Ching Shih ,  Szu-Wei Lu ,  Jing-Cheng Lin ,  Long Hua Lee ,  Kuan-Yu Huang

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/498 ,  H01L25/065

CPC classification number: H01L23/3135 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/49816 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2225/0651 ,  H01L2225/0652

Abstract: A method for forming an underfill structure and semiconductor packages including the underfill structure are disclosed. In an embodiment, the semiconductor package may include a package including an integrated circuit die; an interposer bonded to the integrated circuit die by a plurality of die connectors; and an encapsulant surrounding the integrated circuit die. The semiconductor package may further include a package substrate bonded to the interposer by a plurality of conductive connectors; a first underfill between the package and the package substrate, the first underfill having a first coefficient of thermal expansion (CTE); and a second underfill surrounding the first underfill, the second underfill having a second CTE less than the first CTE.

公开(公告)号：US11854998B2

公开(公告)日：2023-12-26

申请号：US17853593

申请日：2022-06-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jing-Cheng Lin ,  Chen-Hua Yu ,  Po-Hao Tsai

IPC: H01L23/544 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L23/544 ,  H01L23/3135 ,  H01L24/19

Abstract: A semiconductor device has a conductive via laterally separated from the semiconductor, an encapsulant between the semiconductor device and the conductive via, and a mark. The mark is formed from characters that are either cross-free characters or else have a overlap count of less than two. In another embodiment the mark is formed using a wobble scan methodology. By forming marks as described, defects from the marking process may be reduced or eliminated.

公开(公告)号：US11658172B2

公开(公告)日：2023-05-23

申请号：US16585868

申请日：2019-09-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jing-Cheng Lin

IPC: H01L23/48 ,  H01L25/00 ,  H01L21/768 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L25/50 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L24/89 ,  H01L25/0657 ,  H01L2224/0231 ,  H01L2224/02372 ,  H01L2224/05024 ,  H01L2224/0569 ,  H01L2224/05547 ,  H01L2224/05576 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/09181 ,  H01L2224/80075 ,  H01L2224/80097 ,  H01L2224/80121 ,  H01L2224/80204 ,  H01L2224/80815 ,  H01L2224/80855 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80986 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06558 ,  H01L2924/0002 ,  H01L2924/1304 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2224/05647 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/94 ,  H01L2224/80001 ,  H01L2224/80121 ,  H01L2924/00014 ,  H01L2224/9202 ,  H01L2224/11

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first polymer layer formed between a first substrate and a second substrate, and a first conductive layer formed over the first polymer. The semiconductor device includes a first through substrate via (TSV) formed over the first conductive layer, and the conductive layer is in direct contact with the first TSV and the first polymer.

公开(公告)号：US11621205B2

公开(公告)日：2023-04-04

申请号：US17208694

申请日：2021-03-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Wei Chen ,  Li-Chung Kuo ,  Ying-Ching Shih ,  Szu-Wei Lu ,  Jing-Cheng Lin ,  Long Hua Lee ,  Kuan-Yu Huang

IPC: H01L23/31 ,  H01L23/498 ,  H01L21/56 ,  H01L23/00 ,  H01L25/065

Abstract: A method for forming an underfill structure and semiconductor packages including the underfill structure are disclosed. In an embodiment, the semiconductor package may include a package including an integrated circuit die; an interposer bonded to the integrated circuit die by a plurality of die connectors; and an encapsulant surrounding the integrated circuit die. The semiconductor package may further include a package substrate bonded to the interposer by a plurality of conductive connectors; a first underfill between the package and the package substrate, the first underfill having a first coefficient of thermal expansion (CTE); and a second underfill surrounding the first underfill, the second underfill having a second CTE less than the first CTE.

公开(公告)号：US20220320029A1

公开(公告)日：2022-10-06

申请号：US17843725

申请日：2022-06-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Hui Cheng ,  Po-Hao Tsai ,  Jing-Cheng Lin

IPC: H01L23/00 ,  H01L23/28 ,  H01L21/768 ,  H01L21/56 ,  H01L23/48 ,  H01L21/48 ,  H01L25/10 ,  H01L25/00 ,  H01L21/683

Abstract: A semiconductor device and method utilizing a dummy structure in association with a redistribution layer is provided. By providing the dummy structure adjacent to the redistribution layer, damage to the redistribution layer may be reduced from a patterning of an overlying passivation layer, such as by laser drilling. By reducing or eliminating the damage caused by the patterning, a more effective bond to an overlying structure, such as a package, may be achieved.

公开(公告)号：US11424194B2

公开(公告)日：2022-08-23

申请号：US16595741

申请日：2019-10-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Wei Wu ,  Ying-Ching Shih ,  Szu-Wei Lu ,  Jing-Cheng Lin

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L23/14 ,  H01L23/48 ,  H01L23/498 ,  H01L23/31

Abstract: The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure has a first conductive layer on a first substrate and a second conductive layer on a second substrate. A bonding structure is disposed between the first conductive layer and the second conductive layer. A support structure is disposed between the first substrate and the second substrate. A passivation layer covers a bottom surface of the first conductive layer and has a lower surface facing an uppermost surface of the support structure.

公开(公告)号：US11362046B2

公开(公告)日：2022-06-14

申请号：US16887351

申请日：2020-05-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jing-Cheng Lin ,  Chin-Chuan Chang ,  Jui-Pin Hung

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L25/03 ,  H01L25/00 ,  H01L25/065 ,  H01L25/10

Abstract: Some embodiments relate to a semiconductor package. The package includes a redistribution layer (RDL), and a first semiconductor die disposed over the RDL. The first semiconductor die includes a plurality of contact pads electrically coupled to the RDL. The RDL enables fan-out connection of the first semiconductor die. A die package is disposed over the first semiconductor die and over the RDL. The die package is coupled to a first surface of the RDL by a plurality of conductive bump structures. The plurality of conductive bump structures laterally surround the plurality of contact pads and have uppermost surfaces that are level with an uppermost surface of the first semiconductor die.

公开(公告)号：US20220165611A1

公开(公告)日：2022-05-26

申请号：US17650926

申请日：2022-02-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  An-Jhih Su ,  Chi-Hsi Wu ,  Der-Chyang Yeh ,  Ming Shih Yeh ,  Jing-Cheng Lin ,  Hung-Jui Kuo

IPC: H01L21/768 ,  H01L21/48 ,  H01L23/48 ,  H01L23/498 ,  H01L23/522 ,  H01L23/538 ,  H01L23/00

Abstract: A method includes forming a metal layer extending into openings of a dielectric layer to contact a first metal pad and a second metal pad, and bonding a bottom terminal of a component device to the metal layer. The metal layer has a first portion directly underlying and bonded to the component device. A raised via is formed on the metal layer, and the metal layer has a second portion directly underlying the raised via. The metal layer is etched to separate the first portion and the second portion of the metal layer from each other. The method further includes coating the raised via and the component device in a dielectric layer, revealing the raised via and a top terminal of the component device, and forming a redistribution line connecting the raised via to the top terminal.

公开(公告)号：US11335553B2

公开(公告)日：2022-05-17

申请号：US16866131

申请日：2020-05-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jing-Cheng Lin

IPC: H01L21/02 ,  H01L27/06 ,  H01L23/48 ,  H01L21/822 ,  H01L21/20 ,  H01L21/762

Abstract: A method is disclosed that includes operations as follows: after forming an ion-implanted layer disposed between an epitaxial layer and a first semiconductor substrate, bounding the epitaxial layer to a bonding oxide layer without forming any layer between the epitaxial layer and the bonding oxide layer; and removing the first semiconductor substrate together with a portion of the ion-implanted layer and keeping a remaining portion of the ion-implanted layer on the epitaxial layer.