公开(公告)号：US20090039258A1

公开(公告)日：2009-02-12

申请号：US12244188

申请日：2008-10-02

申请人： Toshifumi HONDA ,  Hiroshi Makino

发明人： Toshifumi HONDA ,  Hiroshi Makino

IPC分类号： G01N23/00

CPC分类号： G01N23/2251 ,  H01J37/1471 ,  H01J37/153 ,  H01J37/21 ,  H01J37/243 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/1501 ,  H01J2237/1532 ,  H01J2237/216 ,  H01J2237/2487 ,  H01J2237/2817 ,  H01J2237/2826

摘要： A scanning electron microscope includes an electron beam source which emits an electron beam, a beam current controller which controls a beam current of the electron beam, an electron beam converger which converges the electron beam on a surface of a sample, an electron beam scanner which scans the electron beam on the surface of the sample, a table which mounts the sample and moves at least in one direction, a detector which detects a secondary electron or a reflected electron emanated from the sample by the scan of the electron beam, an image former which forms an image of the sample based on a detection value of the detector, an image processor which processes the image formed by the image former. The beam current controller controls the beam current of the electron beam by changing transmittance of the electron beam in an irradiation path of the electron beam.

摘要翻译： 扫描电子显微镜包括发射电子束的电子束源，控制电子束的束电流的束流控制器，将电子束会聚在样品的表面上的电子束会聚器，电子束扫描器 扫描样品表面上的电子束，安装样品并至少沿一个方向移动的台面;检测器，其通过扫描电子束检测从样品发射的二次电子或反射电子;图像 前者，其基于检测器的检测值形成样本的图像，处理由图像形成器形成的图像的图像处理器。 束电流控制器通过改变电子束的照射路径中的电子束的透射率来控制电子束的束流。

公开(公告)号：US07397031B2

公开(公告)日：2008-07-08

申请号：US11452989

申请日：2006-06-15

申请人： Hiroyuki Shinada ,  Atsuko Takafuji ,  Takanori Ninomiya ,  Yuko Sasaki ,  Mari Nozoe ,  Hisaya Murakoshi ,  Taku Ninomiya ,  Yuji Kasai ,  Hiroshi Makino ,  Yutaka Kaneko ,  Kenji Tanimoto

发明人： Hiroyuki Shinada ,  Atsuko Takafuji ,  Takanori Ninomiya ,  Yuko Sasaki ,  Mari Nozoe ,  Hisaya Murakoshi ,  Taku Ninomiya ,  Yuji Kasai ,  Hiroshi Makino ,  Yutaka Kaneko ,  Kenji Tanimoto

IPC分类号： H01J37/28

CPC分类号： G01N23/225 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： An apparatus for inspecting a sample using a scanning electron microscope includes a sample stage, a first electron-optical system to scan an electron beam of a first beam current on the sample, a second electron-optical system to scan an electron beam of a second beam current smaller than the first beam current on the sample, a mechanism to move the sample stage, a detector provided in each of the first and second electron-optical systems to detect a secondary electron. The first electron-optical system is operable in a first mode and the second electron-optical system is operable in a second mode with higher resolution than that of the first mode. In the first mode, the sample is observed while the sample stage is moved continuously, and in the second mode, the sample is observed by detecting a secondary electron using the detector while the sample stage is held stationary.

摘要翻译： 使用扫描电子显微镜检查样品的装置包括样品台，用于扫描样品上的第一束电流的电子束的第一电子 - 光学系统，用于扫描第二电子束的电子束的第二电子 - 光学系统 光束电流小于样品上的第一光束电流，移动样品台的机构，设置在每个第一和第二电子光学系统中的检测二次电子的检测器。 第一电子 - 光学系统可在第一模式中操作，并且第二电子 - 光学系统可以以比第一模式更高的分辨率在第二模式中操作。 在第一模式中，在样品台连续移动时观察样品，在第二模式中，通过在样品台保持静止时使用检测器检测二次电子来观察样品。

公开(公告)号：US20080017797A1

公开(公告)日：2008-01-24

申请号：US11779140

申请日：2007-07-17

申请人： Zhaohui CHENG ,  Hiroshi Makino ,  Kenji Tanimoto ,  Seiko Omori

发明人： Zhaohui CHENG ,  Hiroshi Makino ,  Kenji Tanimoto ,  Seiko Omori

IPC分类号： G01N23/00

CPC分类号： H01J37/28 ,  H01J37/244 ,  H01J37/266 ,  H01J2237/0492 ,  H01J2237/04924 ,  H01J2237/21 ,  H01J2237/221 ,  H01J2237/24564 ,  H01J2237/24571 ,  H01J2237/2816 ,  H01J2237/2817

摘要： Pattern inspection and measurement technique where the failure of the detection of a secondary signal due to the variation of an optical condition of a primary electron beam or the occurrence of an electric field perpendicular to a traveling direction of the primary electron beam in a surface of a wafer is minimized, an SEM image the SN ratio of which is high and which hardly has shading in a field of view can be acquired and measurement such as measuring the dimensions and configuration of a measured object and inspecting a defect is enabled at high precision and high repeatability. A lens for converging a secondary signal is installed in a position which a traveling direction of the primary electron beam crosses or on a course of the secondary signal spatially separated from the primary electron beam by Wien filter. An SEM image always free of shading caused by the failure of the detection of a secondary signal in the field of view can be acquired by providing a unit that changes the setting of the lens according to the optical condition such as retarding voltage and an electrification control electrode of the primary electron beam.

摘要翻译： 模式检查和测量技术，其中由于一次电子束的光学条件的变化或与在一次电子束的表面中的一次电子束的行进方向垂直的电场的发生而检测到次级信号的故障 晶片被最小化，可以获得SN比高且在视场中几乎不具有阴影的SEM图像，并且能够以高精度测量测量对象的尺寸和构造以及检查缺陷， 重复性高。 用于会聚二次信号的透镜安装在一次电子束的行进方向与维纳滤波器与一次电子束空间分离的二次信号的过程的位置。 可以通过提供根据诸如延迟电压和通电控制的光学条件来改变透镜的设置的单元来获得始终没有由视场中的次级信号的检测失败引起的阴影的SEM图像 一次电子束的电极。

公开(公告)号：US20070040118A1

公开(公告)日：2007-02-22

申请号：US11503997

申请日：2006-08-15

申请人： Zhaohui Cheng ,  Hiroshi Makino ,  Hikaru Koyama ,  Mitsugu Sato

发明人： Zhaohui Cheng ,  Hiroshi Makino ,  Hikaru Koyama ,  Mitsugu Sato

IPC分类号： G21K7/00 ,  G01N23/00

CPC分类号： G01N23/2251 ,  G01R31/307 ,  H01J37/026 ,  H01J37/28 ,  H01J2237/0044 ,  H01J2237/0047 ,  H01J2237/0048 ,  H01J2237/2816 ,  H01J2237/2817

摘要： A inspecting and measurement method and inspecting and measurement apparatus for semiconductor devices and patterns such as photomasks using an electron beam which can measure the charged potential of a sample with higher precision than in the prior art, and a inspecting and measurement apparatus which can measure charged potential by means of a simple construction. When an S curve is observed in a semiconductor device to be inspectioned and measured, fluctuations of the charged potential of the inspection sample surface are suppressed by optimizing the energy of a primary electron beam used for irradiation. When the surface potential of the semiconductor device is measured, a more precise potential measurement than that of the prior art can be performed which is almost unaffected by the charged potential of an insulation film surface. Further, the surface potential can be measured without installing a special apparatus for wafer surface potential measurement such as an energy filter, so the cost of the apparatus can be reduced.

摘要翻译： 使用电子束的半导体器件和图案的检查和测量方法和检查和测量装置，其可以测量比现有技术更高精度的样品的带电电位的电子束，以及可以测量充电的检查和测量装置 通过简单的构造来实现潜力。 当在要检查和测量的半导体器件中观察到S曲线时，通过优化用于照射的一次电子束的能量来抑制检查样品表面的带电电位的波动。 当测量半导体器件的表面电位时，可以进行比现有技术更精确的电位测量，其几乎不受绝缘膜表面的带电电位的影响。 此外，可以在不安装诸如能量过滤器的晶片表面电位测量的专用装置的情况下测量表面电位，因此可以降低装置的成本。

公开(公告)号：US20060262628A1

公开(公告)日：2006-11-23

申请号：US11438668

申请日：2006-05-23

申请人： Koji Nii ,  Shigeki Obayashi ,  Hiroshi Makino ,  Koichiro Ishibashi ,  Hirofumi Shinohara

发明人： Koji Nii ,  Shigeki Obayashi ,  Hiroshi Makino ,  Koichiro Ishibashi ,  Hirofumi Shinohara

IPC分类号： G11C5/14

CPC分类号： G11C11/419 ,  G11C5/063 ,  G11C11/412

摘要： Cell power supply lines are arranged for memory cell columns, and adjust impedances or voltage levels of the cell power supply lines according to the voltage levels of bit lines in the corresponding columns, respectively. In the data write operation, the cell power supply line is forced into a floating state according to the bit line potential on a selected column and has the voltage level changed, and a latching capability of a selected memory cell is reduced to write data fast. Even with a low power supply voltage, a static semiconductor memory device that can stably perform write and read of data is implemented.

公开(公告)号：US06897172B2

公开(公告)日：2005-05-24

申请号：US10350901

申请日：2003-01-23

申请人： Tatsuji Furuse ,  Seiichiro Hirahara ,  Shuji Nakazawa ,  Yasushi Ode ,  Tomoyuki Kojima ,  Fumiaki Sekine ,  Hiroshi Makino ,  Manabu Yonekura

发明人： Tatsuji Furuse ,  Seiichiro Hirahara ,  Shuji Nakazawa ,  Yasushi Ode ,  Tomoyuki Kojima ,  Fumiaki Sekine ,  Hiroshi Makino ,  Manabu Yonekura

IPC分类号： C03C8/20 ,  C03C10/04 ,  C04B35/22 ,  C04B35/465 ,  C03C14/00

CPC分类号： C04B35/22 ,  C03C8/20 ,  C04B35/465 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3234 ,  C04B2235/3236 ,  C04B2235/3239 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3248 ,  C04B2235/3255 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3267 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3277 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3289 ,  C04B2235/3291 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/3463 ,  C04B2235/3481 ,  C04B2235/36 ,  C04B2235/5436 ,  C04B2235/6025 ,  C04B2235/656 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/9661

摘要： The present invention provides a dielectric ceramic composition comprising: 30 to 90% by weight of a crystallized glass powder capable of depositing a diopside crystal, 1 to 40% by weight of a calcium titanate powder, a strontium titanate powder or a mixed powder thereof, and 0 to 60% by weight of at least one kind of a powder selected from the group consisting of Al2O3, TiO2, ZrO2, MgTiO3, BaTi4O9, La2Ti2O7, Nd2Ti2O7, Ca2Nb2O7, SrZrO3 and CaZrO3, and a dielectric ceramics obtained by firing the same.

摘要翻译： 本发明提供一种电介质陶瓷组合物，其包含：30〜90重量％的能够沉积透辉石结晶的结晶玻璃粉末，1〜40重量％的钛酸钙粉末，钛酸锶粉末或其混合粉末， 和0至60重量％的至少一种选自下组的粉末：Al 2 O 3，TiO 2， ZrO 2，MgTiO 3，BaTi 4 O 9，La 2 Ti， N 2，N 2，N 2，N 2，O 2，C 2 Nb 2 O 3，SrZrO 3和CaZrO 3 3，以及通过烧结获得的电介质陶瓷 一样。

公开(公告)号：US06888138B2

公开(公告)日：2005-05-03

申请号：US10868907

申请日：2004-06-17

申请人： Takashi Ohshima ,  Hiroshi Makino ,  Hiroshi Toyama ,  Hiroyuki Shinada

发明人： Takashi Ohshima ,  Hiroshi Makino ,  Hiroshi Toyama ,  Hiroyuki Shinada

IPC分类号： G01N23/225 ,  G01Q30/02 ,  H01J37/04 ,  H01J37/244 ,  H01J37/28

CPC分类号： H01J37/244 ,  H01J37/28 ,  H01J2237/2605

摘要： It was hard for conventional SEMs to take measurements at a high speed and take accurate measurements when an insulator exists between an object to probe and the detector, because the conventional SEMs used a continuous electron beam. Also, it was impossible to apply voltage to the sample during the measurement of current. By pulse-modulating the electron beam and extracting a high-frequency signal component from the sample, new SEM equipment disclosed herein detects electrons absorbed in the sample at a high speed and with precision. Precise and high-speed absorption current measurements can be achieved. High-functionality inspection apparatus can be provided.

摘要翻译： 传统的扫描电镜很难在高速下进行测量，并且当物体与探针和检测器之间存在绝缘体时进行精确的测量，因为传统的扫描电镜使用连续的电子束。 此外，在测量电流期间不可能对样品施加电压。 通过脉冲调制电子束并从样品中提取高频信号分量，本文公开的新的SEM设备以高速和精确的方式检测样品中吸收的电子。 可以实现精确和高速吸收电流测量。 可以提供高功能检查装置。

公开(公告)号：US20050051722A1

公开(公告)日：2005-03-10

申请号：US10885725

申请日：2004-07-08

申请人： Hiroshi Makino ,  Hisaya Murakoshi ,  Hiroyuki Shinada ,  Hideo Todokoro

发明人： Hiroshi Makino ,  Hisaya Murakoshi ,  Hiroyuki Shinada ,  Hideo Todokoro

IPC分类号： G01B15/00 ,  G01B15/08 ,  G01N23/04 ,  G01N23/225 ,  H01J37/21 ,  H01J37/22 ,  H01J37/29 ,  H01L21/66 ,  G01N23/00

CPC分类号： H01J37/292 ,  G01N23/04 ,  H01J2237/2817

摘要： The present invention relates to an inspection apparatus comprising: an electron emitting unit for sequentially emitting an electron beam in the direction of the inspection area of a sample; a decelerating means for drawing back the electron beam in the vicinity of the inspection area; an imaging unit for forming images of the electron beam, which has been drawn back in the vicinity of the inspection area, on multiple different image forming conditions; an image detecting unit for capturing the electron beam that formed an image corresponding to each image forming condition and an image processing unit for comparing the images on different image forming conditions with one another to thereby detect a defect in the inspection area.

摘要翻译： 本发明涉及一种检查装置，包括：电子发射单元，用于沿样本的检查区域的方向依次发射电子束; 用于在检查区域附近拉回电子束的减速装置; 用于在多个不同的图像形成条件下形成已经被拉回到检查区域附近的电子束的图像的成像单元; 用于捕获形成与每个图像形成条件相对应的图像的电子束的图像检测单元和用于将不同图像形成条件上的图像彼此进行比较的图像处理单元，从而检测检查区域中的缺陷。

公开(公告)号：US20050045820A1

公开(公告)日：2005-03-03

申请号：US10868907

申请日：2004-06-17

申请人： Takashi Ohshima ,  Hiroshi Makino ,  Hiroshi Toyama ,  Hiroyuki Shinada

发明人： Takashi Ohshima ,  Hiroshi Makino ,  Hiroshi Toyama ,  Hiroyuki Shinada

IPC分类号： G01N23/225 ,  G01Q30/02 ,  H01J37/04 ,  H01J37/244 ,  H01J37/28

CPC分类号： H01J37/244 ,  H01J37/28 ,  H01J2237/2605

摘要： It was hard for conventional SEMs to take measurements at a high speed and take accurate measurements when an insulator exists between an object to probe and the detector, because the conventional SEMs used a continuous electron beam. Also, it was impossible to apply voltage to the sample during the measurement of current. By pulse-modulating the electron beam and extracting a high-frequency signal component from the sample, new SEM equipment disclosed herein detects electrons absorbed in the sample at a high speed and with precision. Precise and high-speed absorption current measurements can be achieved. High-functionality inspection apparatus can be provided.

摘要翻译： 传统的扫描电镜很难在高速下进行测量，并且当物体与探针和检测器之间存在绝缘体时进行精确的测量，因为传统的扫描电镜使用连续的电子束。 此外，在测量电流期间不可能对样品施加电压。 通过脉冲调制电子束并从样品中提取高频信号分量，本文公开的新的SEM设备以高速和精确的方式检测样品中吸收的电子。 可以实现精确和高速吸收电流测量。 可以提供高功能检查装置。

公开(公告)号：US06635935B2

公开(公告)日：2003-10-21

申请号：US09818907

申请日：2001-03-28

申请人： Hiroshi Makino

发明人： Hiroshi Makino

IPC分类号： H01L2976

CPC分类号： H01L27/11807 ,  H01L27/088

摘要： In a semiconductor device, first gate electrodes contributing to transistor operations and second gate electrodes not contributing to the transistor operations each have the same gate length, share the common gate length direction, and are arranged in the same pitch. The first gate electrodes and the second gate electrodes are all made to extend, in the gate width direction, beyond the longest active region width. With such a configuration, it is possible to provide a semiconductor device having a pattern structure that will not cause performance degradation of transistors when designing a semiconductor integrated circuit within a semiconductor device.

摘要翻译： 在半导体器件中，有助于晶体管操作的第一栅极电极和对晶体管操作无贡献的第二栅电极各具有相同的栅极长度，共享公共栅极长度方向，并以相同的间距排列。 第一栅极电极和第二栅极电极都在栅极宽度方向上延伸超过最长有效区域宽度。 通过这样的结构，可以提供一种半导体器件，其具有在半导体器件内设计半导体集成电路时不会引起晶体管性能劣化的图案结构。