公开(公告)号：US20060231015A1

公开(公告)日：2006-10-19

申请号：US11402062

申请日：2006-04-12

申请人： Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Takahiro Imai

发明人： Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Takahiro Imai

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B29/04 ,  C30B25/20

摘要： The object of the present invention is to obtain a high quality single crystalline diamond that has less distortion and large area suitable for semiconductor device substrates or an optical component material. The present invention is a single crystalline diamond produced by chemical vapor deposition, wherein, when a linear polarized light which is composed of two linear polarized lights perpendicular to each other is introduced into one main face of the single crystalline diamond, a maximum value of a retardation between the two linear polarized lights perpendicular to each other which come out from an opposite main face is not more than 50 μm at maximum per a thickness of 100 μm across an entire of the single crystalline diamond, and also a method for producing the diamond.

摘要翻译： 本发明的目的是获得具有较小变形和大面积的高半导体器件衬底或光学组件材料的高质量单晶金刚石。 本发明是通过化学气相沉积法生产的单晶金刚石，其中当由彼此垂直的两个线性偏振光组成的线性偏振光被引入单晶金刚石的一个主面时，其最大值为 在整个单晶金刚石上，相对于从相对的主面出来的彼此垂直的两个线偏振光之间的延迟最大值不超过每100μm厚度100mum的最大50μm，并且还有一种用于制造金刚石的方法 。

公开(公告)号：US07118939B2

公开(公告)日：2006-10-10

申请号：US11048780

申请日：2005-02-03

申请人： Takahiro Imai

发明人： Takahiro Imai

IPC分类号： H01L21/44

CPC分类号： H01L24/81 ,  H01L21/563 ,  H01L24/29 ,  H01L2224/16225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/75 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  Y10T29/49131 ,  Y10T29/49133

摘要： A formation surface of electrodes and a formation surface of leads are imaged along an axis which intersects an XY plane at right angles. A projected image of the formation surface of the electrodes and the formation surface of the leads is obtained, the projected image being projected onto a plane which intersects the Z axis at right angles. A difference between an image of one of the electrodes and an image of one of the leads in the projected image is calculated. A deformation value of at least one of a substrate and a semiconductor chip due to expansion or shrinkage is calculated, the deformation value being necessary for eliminating the difference. A change in temperature of at least one of the substrate and the semiconductor chip is calculated the change in temperature being necessary for obtaining the deformation value. The temperature of at least one of the substrate and the semiconductor chip is changed based on the change in temperature.

摘要翻译： 电极的形成表面和引线的形成表面沿着与XY平面成直角相交的轴成像。 获得电极的形成表面和引线的形成表面的投影图像，投影图像投影到与Z轴成直角的平面上。 计算一个电极的图像与投影图像中的一个引线的图像之间的差异。 计算由于膨胀或收缩引起的基板和半导体芯片中的至少一个的变形值，为了消除差异而需要变形值。 计算基板和半导体芯片中的至少一个的温度变化，以获得变形值所需的温度变化。 基于温度的变化来改变基板和半导体芯片中的至少一个的温度。

公开(公告)号：US20060001360A1

公开(公告)日：2006-01-05

申请号：US11211665

申请日：2005-08-26

申请人： Natsuo Tatsumi ,  Takahiro Imai

发明人： Natsuo Tatsumi ,  Takahiro Imai

IPC分类号： H01J1/62

CPC分类号： H01J23/04 ,  H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J23/06 ,  H01J2201/30457

摘要： An object of the present invention is to provide a cold-cathode electron source successfully achieving a high frequency and a high output, a microwave tube using it, and a production method thereof. In a cold-cathode electron source according to the present invention, emitters have a tip portion tapered at an aspect ratio R of not less than 4, and thus the capacitance between the emitters and a gate electrode is decreased by a degree of declination from the gate electrode. For this reason, the cold-cathode electron source is able to support an operation at a high frequency. A cathode material of the cold-cathode electron source is none of the conventional cathode materials such as tungsten and silicon, but is a diamond with a high melting point and a high thermal conductivity. For this reason, the emitters are unlikely to melt even at a high current density of an electric current flowing in the emitters, and thus the cold-cathode electron source is able to support an operation at a high output.

摘要翻译： 本发明的目的是提供一种成功实现高频和高输出的冷阴极电子源，使用它的微波管及其制造方法。 在根据本发明的冷阴极电子源中，发射器具有以不小于4的纵横比R渐缩的尖端部分，因此发射极和栅电极之间的电容从 栅电极。 因此，冷阴极电子源能够以高频率进行动作。 冷阴极电子源的阴极材料不是诸如钨和硅的常规阴极材料，而是具有高熔点和高导热性的金刚石。 因此，即使在发射极中流动的电流的高电流密度下，发射极也不会熔化，因此冷阴极电子源能够支持高输出的动作。

公开(公告)号：US20050183295A1

公开(公告)日：2005-08-25

申请号：US11048780

申请日：2005-02-03

申请人： Takahiro Imai

发明人： Takahiro Imai

IPC分类号： H01L21/56 ,  H01L21/58 ,  H01L21/60 ,  H01L23/495

CPC分类号： H01L24/81 ,  H01L21/563 ,  H01L24/29 ,  H01L2224/16225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/75 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  Y10T29/49131 ,  Y10T29/49133

摘要： A formation surface of electrodes and a formation surface of leads are imaged along an axis which intersects an XY plane at right angles. A projected image of the formation surface of the electrodes and the formation surface of the leads is obtained, the projected image being projected onto a plane which intersects the Z axis at right angles. A difference between an image of one of the electrodes and an image of one of the leads in the projected image is calculated. A deformation value of at least one of a substrate and a semiconductor chip due to expansion or shrinkage is calculated, the deformation value being necessary for eliminating the difference. A change in temperature of at least one of the substrate and the semiconductor chip is calculated the change in temperature being necessary for obtaining the deformation value. The temperature of at least one of the substrate and the semiconductor chip is changed based on the change in temperature.

摘要翻译： 电极的形成表面和引线的形成表面沿着与XY平面成直角相交的轴成像。 获得电极的形成表面和引线的形成表面的投影图像，投影图像投影到与Z轴成直角的平面上。 计算一个电极的图像与投影图像中的一个引线的图像之间的差异。 计算由于膨胀或收缩引起的基板和半导体芯片中的至少一个的变形值，为了消除差异而需要变形值。 计算基板和半导体芯片中的至少一个的温度变化，以获得变形值所需的温度变化。 基于温度的变化来改变基板和半导体芯片中的至少一个的温度。

公开(公告)号：US20050158915A1

公开(公告)日：2005-07-21

申请号：US11033259

申请日：2005-01-12

申请人： Takahiro Imai

发明人： Takahiro Imai

IPC分类号： H01L21/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/58 ,  H01L21/60

CPC分类号： H01L24/81 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/18161 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/05599

摘要： A method of fabricating a semiconductor device includes hardening resin at a temperature that is less than or equal to the boiling point of the resin and until the hardening reaction ratio of the resin has reached at least 80%, the resin being disposed between a wiring board which has an interconnecting pattern and a semiconductor chip which has a plurality of electrodes and which is mounted on the wiring board in such a manner that the electrodes are in contact with the interconnecting pattern. A eutectic alloy joint is then formed between the electrodes and the interconnecting pattern.

摘要翻译： 一种制造半导体器件的方法包括在小于或等于树脂沸点的温度下固化树脂，直到树脂的硬化反应比达到至少80％，树脂被布置在布线板 其具有互连图案和具有多个电极并且以使得电极与互连图案接触的方式安装在布线板上的半导体芯片。 然后在电极和互连图案之间形成共晶合金接头。

公开(公告)号：US20050133735A1

公开(公告)日：2005-06-23

申请号：US10952477

申请日：2004-09-29

申请人： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J1/304 ,  H01J1/308 ,  H01J63/02 ,  G21G5/00

CPC分类号： H01J63/02 ,  H01J1/3044 ,  H01J1/308

摘要： The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.

摘要翻译： 本发明涉及具有有效发射电子的结构的电子发射器件。 电子发射器件具有由n型金刚石构成的衬底和设置在衬底上的尖突起。 突起包括设置在基板侧的基座和设置在基座上并从其尖端发射电子的电子发射部分。 底座由n型钻石组成。 电子发射部分由p型金刚石构成。 从突起（电子发射部分）的尖端到基底和电子发射部分之间的界面的长度优选为100nm以下。

公开(公告)号：US06906258B2

公开(公告)日：2005-06-14

申请号：US10619522

申请日：2003-07-16

申请人： Hisayuki Hirai ,  Susumu Kojima ,  Tamon Ozaki ,  Toshio Shimizu ,  Takahiro Imai ,  Hiroki Sekiya ,  Isao Onodera

发明人： Hisayuki Hirai ,  Susumu Kojima ,  Tamon Ozaki ,  Toshio Shimizu ,  Takahiro Imai ,  Hiroki Sekiya ,  Isao Onodera

IPC分类号： C09D7/12 ,  C09D179/08 ,  C09D201/00 ,  H01B3/00 ,  H01B3/30 ,  H01B3/42 ,  H01B3/44 ,  H01B7/00 ,  H01B7/02 ,  H01B7/29 ,  H01B7/34

CPC分类号： H01B3/421 ,  H01B3/305 ,  H01B3/446

摘要： An enameled wire capable of improving withstand lifetime with respect to the application of surge voltage of an inverter and thermal degradation thereof while restricting an amount of an inorganic filler material is provided. The enameled wire includes an electrically conductive wire (11) and a coating (12) formed of a high molecular compound uniformly mixed with an inorganic filler material in the form of fine flat particles provided around the electrically conductive wire (11). The enameled wire may include an electrically conductive wire (21), a coating (23) formed of a polyester imide resin solution mixed with an inorganic filler material in the form of fine flat particles and provided on the conductive wire and a coating (24) formed of polyamide imide and provided on the coating (23).

摘要翻译： 提供一种能够在限制一定量的无机填充材料的同时提高耐逆变器的浪涌电压的耐久寿命及其热劣化的漆包线。 漆包线包括导电线（11）和由设置在导电线（11）周围的细平坦颗粒形式的无机填料材料均匀混合的高分子化合物形成的涂层（12）。 漆包线可以包括导电线（21），由聚酰亚胺树脂溶液形成的涂层（23），该聚酯酰亚胺树脂溶液与细平坦颗粒形式的无机填料混合并设置在导线上，涂层（24） 由聚酰胺酰亚胺形成并提供在涂层（23）上。

公开(公告)号：US06641861B2

公开(公告)日：2003-11-04

申请号：US09962578

申请日：2001-09-24

申请人： Hirohisa Saito ,  Yoshiyuki Yamamoto ,  Kiichi Meguro ,  Takahiro Imai

发明人： Hirohisa Saito ,  Yoshiyuki Yamamoto ,  Kiichi Meguro ,  Takahiro Imai

IPC分类号： B05D512

CPC分类号： H01L23/3736 ,  H01L21/4871 ,  H01L23/142 ,  H01L23/3732 ,  H01L23/49562 ,  H01L2924/0002 ,  H01L2924/1423 ,  Y10T428/24942 ,  Y10T428/24975 ,  Y10T428/249961 ,  Y10T428/249967 ,  Y10T428/249988 ,  Y10T428/24999 ,  Y10T428/26 ,  Y10T428/30 ,  Y10T428/31678 ,  H01L2924/00

摘要： A method of fabricating a heatsink including a substrate of a sintered compact containing Cu and W, and a thin diamond film layer formed on the surface of the substrate with good adherence, involves immersing the substrate in acid to reduce the Cu content of a surface region thereof and to roughen exposed W at that surface region, and then forming the thin diamond film layer on that surface region by vapor synthesis. Alternatively, a thin diamond film layer is formed on a surface of a porous body substrate, and then a hole in the porous body substrate is filled with Cu.

摘要翻译： 一种制造包括含有Cu和W的烧结体的衬底的散热体的方法以及形成在衬底表面上的良好粘附性的薄金刚石膜层包括将衬底浸入酸中以降低表面区域的Cu含量 并在该表面区域粗化暴露的W，然后通过气相合成在该表面区域上形成薄金刚石膜层。 或者，在多孔体基板的表面上形成薄金刚石膜层，然后用Cu填充多孔体基板的孔。

公开(公告)号：US06458415B2

公开(公告)日：2002-10-01

申请号：US09873620

申请日：2001-06-04

申请人： Kiichi Meguro ,  Takashi Matsuura ,  Takahiro Imai

发明人： Kiichi Meguro ,  Takashi Matsuura ,  Takahiro Imai

IPC分类号： C23C1626

CPC分类号： C23C16/274 ,  C23C16/52

摘要： A method and an apparatus form a diamond film from a microwave plasma by controlling a manufacturing condition based on a spectroscopic measurement of the plasma light emission to obtain a large area of a high-quality diamond film. In the method of forming a diamond film, a gas mixture of hydrocarbon gas and hydrogen gas is introduced into a reactor, where the gas mixture is excited by microwave energy which is also introduced into the reactor to generate a plasma, and the light emitted from the plasma is spectroscopically measured. Furthermore, a formation condition of the diamond film is controlled such that the spectrum of a carbon molecule (C2) falls within a predetermined range of requirement. A carbon molecule vibration temperature is determined from the spectrum, and the formation pressure, or the gas flow rate is controlled so that the determined vibration temperature falls within a specified range, especially 2000 to 2800 K.

摘要翻译： 方法和装置通过基于等离子体发光的光谱测量控制制造条件从微波等离子体形成金刚石膜，以获得大面积的高品质金刚石膜。 在形成金刚石膜的方法中，将烃气体和氢气的气体混合物引入到反应器中，其中气体混合物被微波能量激发，微波能量也被引入到反应器中以产生等离子体，并且从 对光谱进行光谱测量。 此外，控制金刚石膜的形成条件，使得碳分子（C2）的光谱落在预定的要求范围内。 从光谱确定碳分子振动温度，控制地层压力或气体流量，使得所确定的振动温度落在特定范围内，特别是2000至2800K。

公开(公告)号：US06361857B1

公开(公告)日：2002-03-26

申请号：US09232011

申请日：1999-01-14

申请人： Hirohisa Saito ,  Yoshiyuki Yamamoto ,  Kiichi Meguro ,  Takahiro Imai

发明人： Hirohisa Saito ,  Yoshiyuki Yamamoto ,  Kiichi Meguro ,  Takahiro Imai

IPC分类号： B32B900

CPC分类号： H01L23/3736 ,  H01L21/4871 ,  H01L23/142 ,  H01L23/3732 ,  H01L23/49562 ,  H01L2924/0002 ,  H01L2924/1423 ,  Y10T428/24942 ,  Y10T428/24975 ,  Y10T428/249961 ,  Y10T428/249967 ,  Y10T428/249988 ,  Y10T428/24999 ,  Y10T428/26 ,  Y10T428/30 ,  Y10T428/31678 ,  H01L2924/00

摘要： A thin diamond film layer is formed on a substrate with good adherence. A heatsink includes a substrate of a sintered compact including Cu and W, and a thin diamond film layer formed on the surface of the substrate. The Cu content in the substrate is at least 5% by weight. In an X-ray diffraction chart obtained by irradiating the thin diamond film layer with an X-ray, the diffraction peak intensity of the (110) plane of W is at least 100 times the diffraction peak intensity of the (200) plane of Cu.

摘要翻译： 在具有良好粘附性的基材上形成薄金刚石膜层。 散热器包括包含Cu和W的烧结体的基板，以及形成在基板的表面上的薄金刚石膜层。 基材中的Cu含量为至少5重量％。 在通过用X射线照射薄金刚石膜层而获得的X射线衍射图中，W的（110）面的衍射峰强度为Cu的（200）面的衍射峰强度的至少100倍 。