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113 条记录 (耗时 0.038 秒)

    Optical pickup feed device for sliding optical pickup
    91.
    发明授权
    Optical pickup feed device for sliding optical pickup 失效
    用于滑动光学拾取器的光学拾取进给装置

    公开(公告)号：US08151287B2

    公开(公告)日：2012-04-03

    申请号：US12089482

    申请日：2006-09-28

    申请人： Noriyo Oshima ,  Yasuhiro Shinkai ,  Kuniya Satomi ,  Kazuyoshi Sato ,  Yuji Ando ,  Atsushi Shibuya

    发明人： Noriyo Oshima ,  Yasuhiro Shinkai ,  Kuniya Satomi ,  Kazuyoshi Sato ,  Yuji Ando ,  Atsushi Shibuya

    IPC分类号： G11B17/30 ,  G11B21/02 ,  G11B21/16

    CPC分类号： G11B7/08582

    摘要： The present invention is to provide a pickup feed device to accurately position an optical pickup in place with miniaturization. The pickup device includes a lead screw attached to a movable chassis, a pickup portion, a rack member, a torsion coil spring, a projection portion, and a recess portion. The pickup portion has a case receiving the pickup. The rack member is fixed to the case. The rack portion disposed on a rack one end portion and a case one end portion are engaged with the lead screw. A rack another end portion has the abut portion abutting an inner edge portion of the movable chassis. The torsion coil spring urges the abut portion toward a case another end portion. The projection portion is disposed on the abut portion and the recess portion is disposed on the case another end portion.

    摘要翻译： 本发明提供一种拾取器馈送装置，以便将光拾取器精确地定位在适当位置，同时小型化。 拾取装置包括附接到可移动底盘，拾取部分，齿条构件，扭转螺旋弹簧，突出部分和凹部的导螺杆。 拾取部分具有接收拾取器的壳体。 机架部件固定在壳体上。 设置在齿条一端部上的齿条部和壳体一端部与丝杠接合。 齿条另一端部具有邻接可移动底盘的内边缘部分的邻接部分。 扭转螺旋弹簧将抵接部朝向壳体的另一端部推压。 突出部设置在抵接部上，凹部设置在另一端部的壳体上。

    Steam cooker
    93.
    发明申请
    Steam cooker 审中-公开
    蒸锅

    公开(公告)号：US20090007797A1

    公开(公告)日：2009-01-08

    申请号：US11659095

    申请日：2005-07-28

    申请人： Yuji Ando ,  Yoshikazu Kitaguchi ,  Yoshikazu Yamamoto

    发明人： Yuji Ando ,  Yoshikazu Kitaguchi ,  Yoshikazu Yamamoto

    IPC分类号： A47J27/09

    CPC分类号： A21B3/04 ,  F24C15/327

    摘要： A controller monitors water temperature in a pot (41) through a water temperature thermistor in a temperature sensor (48) while a water level sensor is detecting the water level in the pot. When the water temperature in the pot exceeds 110° C., the controller determines that the water level thermistor in the water level sensor (43) cannot perform normal detection, and drives the pump (35) to supply water. When water supply based on the temperature detected by the water temperature thermistor is carried out more than three times, the controller determines that scale has deposited on the water level sensor (43), and notifies a user of a scale cleaning request. In this manner, in the case of detection failure of the water level thermistor, it is possible to notify a scale cleaning request at an appropriate time by determining whether or not the detection failure is attributable to scale deposits.

    摘要翻译： 控制器通过温度传感器（48）中的水温热敏电阻器监测罐（41）中的水温，同时水位传感器检测到锅中的水位。 当锅中的水温超过110℃时，控制器确定水位传感器（43）中的水位热敏电阻不能正常检测，驱动泵（35）供水。 当基于由水温热敏电阻检测到的温度进行供水超过三次时，控制器确定秤已经沉积在水位传感器43上，并向用户通知刻度清洁请求。 以这种方式，在水位热敏电阻的检测失败的情况下，可以通过确定检测失败是否归因于刻度沉积物，在适当的时间通知刻度清洁请求。

    Hetero-junction field effect transistor
    95.
    发明授权
    Hetero-junction field effect transistor 有权
    异质结场效应晶体管

    公开(公告)号：US06320210B1

    公开(公告)日：2001-11-20

    申请号：US09318735

    申请日：1999-05-26

    申请人： Yuji Ando

    发明人： Yuji Ando

    IPC分类号： H01L31072

    CPC分类号： H01L29/802

    摘要： There is provided a hetero-junction field effect transistor including (a) a first semiconductor layer composed of InP, (b) a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer having a smaller electron affinity than that of the first semiconductor layer, (c) a third semiconductor layer formed on the second semiconductor layer, the third semiconductor layer having a greater electron affinity than that of the second semiconductor layer, and being formed at a surface thereof with an opening, the third semiconductor layer being composed of InP, (d) source and drain electrodes formed on the third semiconductor layer, and (e) a gate electrode formed on the second semiconductor layer in the opening of the third semiconductor layer. In accordance with the hetero-junction field effect transistor, it is possible to enhance noise characteristic and high power characteristic.

    摘要翻译： 提供了一种异质结场效应晶体管，其包括：（a）由InP构成的第一半导体层，（b）形成在第一半导体层上的第二半导体层，第二半导体层的电子亲和力小于第一半导体层 半导体层，（c）形成在所述第二半导体层上的第三半导体层，所述第三半导体层具有比所述第二半导体层更大的电子亲和力，并且在其表面形成有开口，所述第三半导体层为 由形成在第三半导体层上的InP，（d）源极和漏极组成，以及（e）形成在第三半导体层的开口中的第二半导体层上的栅电极。 根据异质结场效应晶体管，可以提高噪声特性和高功率特性。

    Picture editing apparatus and method using virtual buffer estimation
    96.
    发明授权
    Picture editing apparatus and method using virtual buffer estimation 失效
    使用虚拟缓冲区估计的图像编辑装置和方法

    公开(公告)号：US6137946A

    公开(公告)日：2000-10-24

    申请号：US54858

    申请日：1998-04-03

    申请人： Yuji Ando

    发明人： Yuji Ando

    IPC分类号： H04N5/91 ,  G11B27/02 ,  G11B27/031 ,  G11B27/034 ,  H04N5/765 ,  H04N5/77 ,  H04N5/775 ,  H04N5/92 ,  H04N7/24 ,  H04N5/76

    CPC分类号： H04N21/23406 ,  G11B27/034 ,  H04N21/23424 ,  H04N21/23611 ,  H04N21/2401 ,  H04N5/765 ,  G11B2220/20 ,  G11B2220/218 ,  G11B2220/2545 ,  H04N5/77 ,  H04N5/775

    摘要： A bit stream C is composed in editing work at a high processing speed wherein at least a portion of a bit stream A resulting from MPEG encoding is concatenated with at least a portion of a bit stream B also resulting from MPEG encoding. The amount of data D.sub.A at an end point A.sub.out of a scene A' of the bit stream A and the amount of data D.sub.B at a start point B.sub.in of a scene B' of the bit stream B to be accumulated in a VBV buffer are calculated. The difference between D.sub.A and D.sub.B is used for adjusting the amount of data at a portion of the bit stream C which corresponds to a point of junction between the bit streams A and B. If D.sub.A >D.sub.B, stuffing code is added to a picture at the end point A.sub.out. If D.sub.A

    摘要翻译： 比特流C以高处理速度的编辑工作组成，其中由MPEG编码产生的比特流A的至少一部分与由MPEG编码产生的比特流B的至少一部分连接。 计算比特流A的场景A'的数据DA的数量DA和待累积在VBV缓冲器中的比特流B的场景B'的起始点的数据DB的数量DB 。 DA和DB之间的差异用于调整与比特流A和B之间的连接点相对应的比特流C的一部分的数据量。如果DA> DB，则填充码被加到图像上 终点Aout。 另一方面，如果DA

    Method of and apparatus for power generation
    97.
    发明授权
    Method of and apparatus for power generation 失效
    发电方法及装置

    公开(公告)号：US6127054A

    公开(公告)日：2000-10-03

    申请号：US114091

    申请日：1998-07-13

    申请人： Yuji Ando ,  Tadayoshi Tanaka ,  Takuya Doi ,  Takumi Takashima

    发明人： Yuji Ando ,  Tadayoshi Tanaka ,  Takuya Doi ,  Takumi Takashima

    IPC分类号： H01M8/18 ,  H01M6/36

    CPC分类号： H01M8/182 ,  H01M2300/0082 ,  Y02E60/528

    摘要： Thermal decomposition of a reactant, XY, proceeds on a negative catalytic electrode to form products, X and Y. The product Y is a cellular reaction material, which separates into ions, Y.sup.+, and electrons, e.sup.-, on the negative catalytic electrode. The ions Y.sup.+ move through a solid electrolyte, the electrons e.sup.- pass through an external resistor, and the product X formed on the negative catalytic electrode is circulated to the positive catalytic electrode, therefore reproducing the reactant XY. Since the cellular reaction material Y need not be released from the top of the catalytic electrode, the invention is adapted to convert heat energy into electric energy efficiently as compared with conventional methods. In one embodiment, reactant XY is 2-propanol, and products X and Y are acetone and hydrogen, respectively.

    摘要翻译： 反应物XY的热分解在负极催化电极上进行以形成产物X和Y.产物Y是细胞反应材料，其在负极催化电极上分离为离子Y +和电子e。 离子Y +移动通过固体电解质，电子通过外部电阻器，并且形成在负极催化电极上的乘积X循环到正极催化电极，因此再生反应物XY。 由于细胞反应材料Y不需要从催化电极的顶部释放，因此本发明适于与常规方法相比有效地将热能转换成电能。 在一个实施方案中，反应物XY是2-丙醇，产物X和Y分别是丙酮和氢。

    Two-dimensional electron gas field effect transistor including an improved InGaAs channel layer
    100.
    发明授权
    Two-dimensional electron gas field effect transistor including an improved InGaAs channel layer 失效
    二维电子气场效应晶体管包括改善的InGaAs沟道层

    公开(公告)号：US5373168A

    公开(公告)日：1994-12-13

    申请号：US988407

    申请日：1992-12-07

    申请人： Yuji Ando ,  Kazuhiko Onda ,  Masaaki Kuzuhara

    发明人： Yuji Ando ,  Kazuhiko Onda ,  Masaaki Kuzuhara

    IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/10 ,  H01L29/778 ,  H01L29/80 ,  H01L29/161 ,  H01L29/205 ,  H01L29/227

    CPC分类号： H01L29/7783 ,  H01L29/1029

    摘要： The invention provides a compound semiconductor multilayer structure having a two-dimensional electron gas, which is applicable to field effect transistors. A ternary compound InGaAs planar channel layer serving as a quantum well has a variation of an In (indium) fraction in a perpendicular direction to a heterojunction interface. The variation has a step-graded profile with taking a maximum value at or in the vicinity of a portion where the two-dimensional electron gas takes a maximum density. Such quantum well has most large depth at a portion except for adjacent portions to the heterojunction interfaces. Such multilayer structure provides a great electron mobility and a strong electron confinement to major electrons at a high electron density portion. Such multilayer structure provides the large effective electron mobility and the large sheet electron density to the two-dimensional electron gas without a gain of the average of the In (indium) fractions, thereby suppressing the enlargement of the lattice mismatch which causes misfit dislocations in crystals.

    摘要翻译： 本发明提供一种可应用于场效应晶体管的具有二维电子气的化合物半导体多层结构。 用作量子阱的三元化合物InGaAs平面沟道层在与异质结界面垂直的方向上具有In（铟）分数的变化。 该变化具有在二维电子气具有最大密度的部分处或附近具有最大值的阶梯分布。 这样的量子阱在除异质结界面的相邻部分之外的部分具有最大的深度。 这种多层结构在高电子密度部分提供了大的电子迁移率和对主要电子的强电子约束。 这种多层结构为二维电子气体提供了大的有效电子迁移率和大的片状电子密度，而不增加In（铟）级分的平均值，从而抑制晶格失配的扩大，这导致晶体失配位错 。