公开(公告)号：US5061881A

公开(公告)日：1991-10-29

申请号：US576260

申请日：1990-08-31

申请人： Hiroshi Suzuki ,  Koichi Sugahara ,  Noboru Tominaga

发明人： Hiroshi Suzuki ,  Koichi Sugahara ,  Noboru Tominaga

IPC分类号： H01J29/50

CPC分类号： H01J29/503 ,  H01J2229/4841

摘要： The invention provides an in-line electron gun in which first astigmatic lens fields that are convergent in a horizontal direction and divergent in a vertical direction are produced between a first focusing grid and a second focusing grid, and second astigmatic lens fields that are divergent in a horizontal direction and convergent in a vertical direction are produced upstream of the first focusing grid. The lens magnifications in both horizontal and vertical directions can be made substantially equal, so that it is possible to achieve a satisfactory resolution over the entire area of the phosphor screen and also to prevent moire occurrences.

摘要翻译： 本发明提供了一种在线电子枪，其中在第一聚焦栅格和第二聚焦栅格之间产生在水平方向会聚并在垂直方向上发散的第一散光透镜场，以及第二散光透镜场，其在 在第一聚焦栅格的上游产生水平方向并在垂直方向上会聚。 可以使水平和垂直方向上的透镜倍率基本上相等，从而可以在荧光屏的整个区域上获得令人满意的分辨率，并且还可以防止发生莫尔条纹。

公开(公告)号：US4860083A

公开(公告)日：1989-08-22

申请号：US73851

申请日：1987-07-14

申请人： Takeshi Kojo

发明人： Takeshi Kojo

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L23/62 ,  H01L27/02 ,  H01L27/06

CPC分类号： H01L27/0248

摘要： In a semiconductor IC, a diode and a resistor for surge protection are integratedly formed in a p-type common island region laterally isolated from a p-type epitaxial layer by oxide film, by forming an n-type region of high impurity concentration to reach down to an n-type buried region and a resistor region, respectively; the IC has higher integration and larger junction area of the diode, and achieve better surge protection.

摘要翻译： 在半导体IC中，通过形成杂质浓度高的n型区域，通过氧化膜在与P型外延层侧向隔离的p型公共岛区域中一体地形成二极管和电涌保护用电阻器 分别下降到n型掩埋区域和电阻器区域; 该IC具有更高的集成度和更大的二极管接合面积，并实现更好的浪涌保护。

公开(公告)号：US4814670A

公开(公告)日：1989-03-21

申请号：US788484

申请日：1985-10-17

申请人： Hiroshi Suzuki ,  Masao Natsuhara ,  Chisato Kurusu

发明人： Hiroshi Suzuki ,  Masao Natsuhara ,  Chisato Kurusu

IPC分类号： H01J29/48 ,  H01J29/50 ,  H04N3/26 ,  H01J29/46

CPC分类号： H01J29/503 ,  H01J2229/4841 ,  H01J2229/4865 ,  H01J2229/4872 ,  H01J2229/4875 ,  H01J2229/4896

摘要： The present invention relates to a cathode ray tube apparatus which can reduce an astigmatism caused from the deflection distortion by providing its focusing grid in two parts and producing a dynamic focusing lens of a quadrupole between the opposing faces of the two focusing grid parts. One focusing grid preferably has vertically disposed oblong through holes, while the other focusing grid preferably has one or more horizontally disposed oblong through holes.

摘要翻译： 阴极射线管装置技术领域本发明涉及一种阴极射线管装置，其可以通过将其聚焦网格分成两部分来减少由偏转变形引起的象散，并且在两个聚焦栅格部分的相对面之间产生四极的动态聚焦透镜。 一个聚焦栅格优选地具有垂直设置的长方形通孔，而另一个聚焦栅格优选地具有一个或多个水平设置的长方形通孔。

公开(公告)号：US4783702A

公开(公告)日：1988-11-08

申请号：US921493

申请日：1986-10-22

申请人： Yoshiaki Sone ,  Takao Kuroda

发明人： Yoshiaki Sone ,  Takao Kuroda

IPC分类号： H04N5/335 ,  H04N5/341 ,  H04N5/353 ,  H04N5/357 ,  H04N5/3725 ,  H04N5/3728 ,  H04N3/14

CPC分类号： H04N3/1568

摘要： A solid state image sensing device which transfers unnecessary signal charges accumulated at photoelectric conversion devices by a first charge pulse in a vertical blanking period to vertical transferring means and throws out the unnecessary signal charges using throw-away means. The necessary signal charges accumulated in the photoelectric conversion devices in such period after the first charge pulse are transferred by a second charge pulse to the vertical transferring means, a horizontal transferring means and a signal detecting means, thereby to issue a video signal.

摘要翻译： 一种固态图像感测装置，其将在光电转换装置中积累的不必要的信号电荷通过垂直消隐期间的第一充电脉冲传送到垂直传送装置，并且使用丢弃装置来抛出不必要的信号电荷。 在将第一充电脉冲通过第二充电脉冲传送到垂直传送装置，水平传送装置和信号检测装置之后的这段时间内累积在光电转换装置中的必要信号电荷，从而发出视频信号。

公开(公告)号：US4782031A

公开(公告)日：1988-11-01

申请号：US22597

申请日：1987-03-04

申请人： Masahiro Hagio ,  Shinichi Katsu ,  Kazuhide Gohda ,  Shutaro Nambu ,  Hiroshi Tsukada

发明人： Masahiro Hagio ,  Shinichi Katsu ,  Kazuhide Gohda ,  Shutaro Nambu ,  Hiroshi Tsukada

IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/08 ,  H01L29/47 ,  H01L29/80 ,  H01L21/265 ,  H01L29/48

CPC分类号： H01L29/66871 ,  H01L29/0891 ,  H01L29/475 ,  H01L29/66878 ,  H01L29/80

摘要： In an FET, two first semiconductor regions of higher impurity concentration and smaller thickness, for source electrode and drain electrode, are formed in a second semiconductor region of lower impurity concentration and larger thickness for a gate electrode, thereby obtaining a low source resistance and small leak current.

摘要翻译： 在FET中，对于源电极和漏电极，杂质浓度和厚度较高的两个第一半导体区域形成在栅电极的较低杂质浓度和较大厚度的第二半导体区域中，从而获得较低的源极电阻和小的 泄漏电流。

公开(公告)号：US4728915A

公开(公告)日：1988-03-01

申请号：US027190

申请日：1987-03-17

申请人： Osamu Konosu ,  Katsuyo Iwasaki

发明人： Osamu Konosu ,  Katsuyo Iwasaki

IPC分类号： H01J29/70 ,  H01J29/50 ,  H01J29/76 ,  H01F3/12

CPC分类号： H01J29/76

摘要： A pair of magnetic member for collecting leakage magnetic flux of barrel-shaped vertical deflection magnetical flux to produce an auxiliary vertical deflection magnetic field of pin-cushion type around the neck of a cathode ray tube at the part of the electron gun, wherein each magnetic member has a vertical principal face part which is to face in parallel to a vertical principal face part of the other magnetic member with regard to a vertical axis of the CRT, and a pair of bar-shaped member, that is an upper horizontal bars and a lower horizontal bars connected to the upper edge part and the lower edge part of the principal plane part and extending toward the neck of the cathode ray tube; the provision of the above-mentioned magnetic members on a deflection yoke of a color cathode ray tube decreases convergence coma and coma distortion of beam spots, and is suitable for producing color picture image with good color convergence, in especially large face wide deflection type color cathode ray tube.

摘要翻译： 一对用于收集桶形垂直偏转磁通量的漏磁通的磁性构件，以在电子枪的一部分的阴极射线管的颈部周围产生针衬垫型的辅助垂直偏转磁场，其中每个磁 构件具有垂直主面部分，其垂直主面部分相对于CRT的垂直轴线与另一个磁性构件的垂直主面部分平行地面对，以及一对棒状构件，即上部水平杆和 连接到主平面部分的上边缘部分和下边缘部分并且朝向阴极射线管的颈部延伸的下部水平条带; 在彩色阴极射线管的偏转线圈上设置上述磁性部件会降低光束点的会聚昏迷和彗形像差，适合于产生具有良好色彩会聚的彩色图像，特别是大面积宽偏转型颜色 阴极射线管。

公开(公告)号：US4682408A

公开(公告)日：1987-07-28

申请号：US846736

申请日：1986-04-01

申请人： Koji Takebayashi

发明人： Koji Takebayashi

IPC分类号： H01L21/76 ,  H01L21/316 ,  H01L21/762 ,  H01L29/06 ,  H01L21/94 ,  H01L

CPC分类号： H01L21/316 ,  H01L21/76216 ,  H01L29/0638 ,  Y10S148/07 ,  Y10S148/085 ,  Y10S438/975 ,  Y10S438/978

摘要： A process is described for forming semiconductor device which include forming step of coating of silicon oxide derivative before ion implanting step: The coating prevents unnecessary extention of channel stop regions thus produces high speed and high current drive ability of produced semiconductor device.

摘要翻译： 描述了用于形成半导体器件的方法，其包括在离子注入步骤之前涂覆氧化硅衍生物的步骤：涂层防止了通道停止区域的不必要的扩展，从而产生所制造的半导体器件的高速度和高电流驱动能力。

公开(公告)号：US4669065A

公开(公告)日：1987-05-26

申请号：US671425

申请日：1984-11-14

申请人： Akira Ohsawa

发明人： Akira Ohsawa

IPC分类号： G11C11/401 ,  G11C7/14 ,  G11C11/4099 ,  G11C11/24

CPC分类号： G11C7/14 ,  G11C11/4099

摘要： A memory apparatus has a dummy cell comprising two sets of series connections of MOS transistors and capacitors, respectively, connected to a pair of bit lines, which are connected to a sense amplifier of a flip-flop type, and a third MOS transistor having a source and a drain thereof connected between junction points of the MOS transistors and the capacitors of the dummy cell. The capacitors are charged at a high level potential and a low level potential, respectively, of the bit lines and then they are shorted to each other through the third MOS transistor so that they have a common potential of a middle potential level. The potential of the middle level can be supplied to a pair of input terminals to the flip-flop type sense amplifier as a reference potential signal. Thus, it is possible to assure a stable sensing operation by the sense amplifier which is free from an influence of a change in the potential of a substrate of the memory apparatus.

摘要翻译： 一种存储装置具有一个虚拟单元，包括分别连接到一对位线的MOS晶体管和电容器的两组串联连接，这两个位线连接到触发器类型的读出放大器，第三MOS晶体管具有 源极和漏极连接在MOS晶体管的接点和虚设电池的电容器之间。 电容器分别以位线的高电平电位和低电平电位充电，然后它们通过第三MOS晶体管彼此短路，使得它们具有中间电位电平的公共电位。 可以将中间电平的电位提供给作为参考电位信号的触发器型读出放大器的一对输入端。 因此，可以通过读出放大器确保不受存储装置的基板的电位变化的影响的稳定的感测操作。

公开(公告)号：US4610076A

公开(公告)日：1986-09-09

申请号：US655672

申请日：1984-09-28

申请人： Seiji Ueda

发明人： Seiji Ueda

IPC分类号： H01L23/52 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/768 ,  H01L23/522 ,  H01L21/38

CPC分类号： H01L29/6659

摘要： In a method of manufacturing a semiconductor device, a thin silicon dioxide (SiO.sub.2) film for a gate insulation film and a polycrystalline silicon layer are successively deposited on a semiconductor substrate having one electrical conductivity type whereby this polycrystalline silicon layer has a gate electrode pattern. In this step a part of the polycrystalline silicon layer is left at a part where an electric contact with the substrate is to be formed. Parts of source and drain regions are formed by the self-align method with this polycrystalline silicon layer as a mask. A thick passivation film for an interlayer insulation film is formed to cover the whole surface. An aperture is formed selectively in the passivation film to expose the whole polycrystalline silicon layer at the part where the contact is formed. The polycrystalline silicon layer in the aperture part and the thin insulation film thereunder are removed to expose a part of the semiconductor substrate. An impurity is introduced into this exposed part to form a contact region overlapped with a part of the above-mentioned source and drain regions. Therefore, the aperture part for a contact with source and drain regions can be formed without a step of mask adjustment. Thus, a highly integrated function device can be easily realized.

摘要翻译： 在制造半导体器件的方法中，在具有一种导电类型的半导体衬底上依次沉积用于栅绝缘膜和多晶硅层的薄二氧化硅（SiO 2）膜，由此该多晶硅层具有栅电极图案。 在该步骤中，多晶硅层的一部分留在与基板形成电接触的部分。 源极和漏极区域的部分通过自对准方法形成，该多晶硅层作为掩模。 形成用于层间绝缘膜的厚钝化膜以覆盖整个表面。 在钝化膜中选择性地形成孔，以在形成接触的部分露出整个多晶硅层。 去除开口部分中的多晶硅层和其下的薄绝缘膜以暴露半导体衬底的一部分。 将杂质引入该暴露部分以形成与上述源极和漏极区域的一部分重叠的接触区域。 因此，可以在不进行掩模调节的步骤的情况下形成用于与源区和漏区接触的开口部。 因此，可以容易地实现高度集成的功能装置。

公开(公告)号：US4609847A

公开(公告)日：1986-09-02

申请号：US564220

申请日：1983-12-22

申请人： Shigeya Ashizaki ,  Masamichi Kimura ,  Masato Taniguchi

发明人： Shigeya Ashizaki ,  Masamichi Kimura ,  Masato Taniguchi

IPC分类号： H01J29/51 ,  H01J29/56 ,  H01J29/70 ,  H01J29/76 ,  H01J29/94

CPC分类号： H01J29/707 ,  H01J29/563

摘要： In a deflection means 11 having a field of pin-cushion type flux distribution, at least a pair of T-shaped magnetic pole pieces 9, 10 are disposed between the front end of an electron gun 2 and the center part of the deflection means 11, thereby to form a barrel type flux distribution, to attain high resolution even at peripheral part of the fluorescent screen.

摘要翻译： 在具有针缓冲型磁通分布场的偏转装置11中，至少一对T形磁极片9,10设置在电子枪2的前端和偏转装置11的中心部分之间 从而形成桶型通量分布，即使在荧光屏的周边部分也能获得高分辨率。