-
公开(公告)号：US07476418B2
公开(公告)日：2009-01-13
申请号：US10951000
申请日：2004-09-27
Applicant: Masatoshi Yasutake , Takashi Kaito , Yoshiharu Shirakawabe , Itaru Kitajima
Inventor： Masatoshi Yasutake , Takashi Kaito , Yoshiharu Shirakawabe , Itaru Kitajima
CPC classification number: G01Q70/12 , C01B32/162 , D01F9/12 , D01F9/1276
Abstract: In a method for fabricating a nanometer-scale structure by arranging nanotubes in a predetermined direction at a predetermined position, the method for fabricating a nanometer-scale structure comprises a first step of planarizing a substrate by etching a predetermined part by irradiating a focused energy beam to the sample, a second step of decomposing and depositing an organic gas into a columnar structure with an objective of determining the position and direction, and a third step of attaching and fixing the nanotube by using the thus deposited columnar structure as a standard of position and direction.
Abstract translation: 在通过在预定位置处以预定方向布置纳米管制造纳米级结构的方法中，纳米级结构的制造方法包括：通过照射聚焦能量束来蚀刻预定部分来平坦化基板的第一步骤 以样品的方式分解和沉积有机气体到目标为确定位置和方向的柱状结构中的第二步骤，以及通过使用这样沉积的柱状结构作为位置标准来附着和固定纳米管的第三步骤 和方向。
-
公开(公告)号：US07427744B2
公开(公告)日：2008-09-23
申请号：US11827110
申请日：2007-07-10
Applicant: Masafumi Watanabe
Inventor： Masafumi Watanabe
IPC: H01J40/14
CPC classification number: G01Q10/04 , H01L41/0536 , H01L41/083
Abstract: A leaf spring 4 constituting an elastic member one end of which is fixed to a foundation 6, and other end of which is brought into contact with a laminating type piezoelectric element 2 or a driven member 5 is constituted such that a thickness is thinned from a side of the foundation 6 to a side of the laminating type piezoelectric element 2 to make a moment of inertia smaller on a side of a portion of other end held by the laminating type piezoelectric element 2 than a portion on one end side fixed to the foundation 6. Further, a strain gage sensor 8 is attached to a side face 4a of the leaf spring 4 constituting one face of one end of the leaf spring 4 proximate to the laminating type piezoelectric element 2 orthogonal to a direction of elongating and contracting the laminating type piezoelectric element 2 constituting a side of the driven member 5.
-
公开(公告)号：US07378654B2
公开(公告)日：2008-05-27
申请号：US11066063
申请日：2005-02-25
Applicant: Shigeru Wakiyama , Osamu Takaoka , Masatoshi Yasutake
Inventor： Shigeru Wakiyama , Osamu Takaoka , Masatoshi Yasutake
IPC: G01N23/00
CPC classification number: G03F1/72 , Y10S977/855
Abstract: A processing probe for repairing a defective portion in a sample has a cantilever and a probe separate and independent from the cantilever and integrally connected to an end portion of the cantilever for scratch-processing a defective portion of a sample. The cantilever and the probe are conductive for preventing the generation of electrostatic charges by friction of the probe against the sample during scratch-processing of the defective portion of the sample.
Abstract translation: 用于修复样品中的缺陷部分的处理探针具有与悬臂分离并独立的悬臂和探针，并且整体地连接到悬臂的端部，用于对样品的缺陷部分进行刮擦处理。 悬臂和探针是导电的，用于通过在样品的缺陷部分的刮擦处理期间探针与样品的摩擦来防止产生静电电荷。
-
94.发明授权公开(公告)号：US07326445B2
公开(公告)日：2008-02-05
申请号：US10220895
申请日：2001-11-27
Applicant: Takashi Kaito
Inventor： Takashi Kaito
CPC classification number: C23C16/00 , B33Y10/00 , B33Y30/00 , B33Y70/00 , B82Y30/00 , C23C16/047 , C23C16/4418 , H01J37/3178
Abstract: A method is adopted for deposition technology using a focused ion beam device, characterized by enabling structures to be formed by using phenanthrene as a source gas and using ions of gallium or gold, silicon or beryllium etc. of energies of 5 to 100 keV from a liquid-metal ion source as ions so as to give a gas blowing density of five to ten times greater than the case of deposition in the related art, with directionality of the gas blowing being both isotropic and symmetrical.
Abstract translation: 采用采用聚焦离子束装置的沉积技术的方法，其特征在于使用菲作为源气体，并使用镓或金，硅或铍等离子从5nm到100keV的能量 液体金属离子源作为离子，以使得气体吹送密度比现有技术中沉积的情况大5至10倍，气体吹送的方向性是各向同性的和对称的。
-
公开(公告)号：US07297944B2
公开(公告)日：2007-11-20
申请号：US10520982
申请日：2003-07-09
Applicant: Toshio Kodama , Masakatsu Hasuda , Toshiaki Fuji , Kouji Iwasaki , Yasuhiko Sugiyama , Yasuyuki Takagi
Inventor： Toshio Kodama , Masakatsu Hasuda , Toshiaki Fuji , Kouji Iwasaki , Yasuhiko Sugiyama , Yasuyuki Takagi
IPC: H01J37/30 , H01J37/317 , G01N1/28 , H01J37/20
CPC classification number: H01J37/3056 , G01N1/32 , H01J2237/31745 , H01J2237/31749
Abstract: An apparatus has a holder member (21) which holds a sample (3), and a removing beam source (13) which irradiates an inert ion beam onto a cross section (4) of the sample (3) held by a holder member (21) and removes a fracture layer on the cross section (4). Then, the removing beam source (13) is disposed on the holding end side of the sample (3) with respect to the normal L of the cross section (4) so that the irradiating direction of the inert ion beam is tilted at the tilt angle θ to the normal L with respect to the cross section (4).
Abstract translation: 一种装置具有保持样品（3）的保持器构件（21）和将惰性离子束照射到由保持器构件保持的样品（3）的横截面（4）上的去除束源（13） 21）并且去除横截面（4）上的断裂层。 然后，移除光束源（13）相对于截面（4）的法线L配置在样品（3）的保持端侧，使得惰性离子束的照射方向倾斜 相对于横截面（4）的角度θ相对于法线L。
-
Patent Agency Ranking
公开(公告)号：US07259372B2
公开(公告)日：2007-08-21
申请号：US11135076
申请日：2005-05-23
Applicant: Osamu Takaoka , Masatoshi Yasutake , Shigeru Wakiyama , Naoya Watanabe
Inventor： Osamu Takaoka , Masatoshi Yasutake , Shigeru Wakiyama , Naoya Watanabe
IPC: G01N23/00
Abstract: A processing method uses a probe of a scanning probe microscope. A fine marker is formed in a processing material by thrusting the probe, which is made of a material harder than the processing material, into a portion of the processing material disposed in the vicinity of an area of the processing material to be processed by the probe during a processing operation. A position of the fine marker on the processing material is detected during the processing operation. A drift amount of the area of the processing material is calculated in accordance with the detected position of the fine marker. A position of the area of the processing material is corrected in accordance with the calculated drift amount.
Abstract translation: 处理方法使用扫描探针显微镜的探针。 通过将由比处理材料更硬的材料制成的探针推入处理材料的被处理材料的附近的被探针加工的区域附近的一部分，在处理材料中形成细小的标记 在处理操作期间。 在处理操作期间检测处理材料上的精细标记的位置。 根据检测的精细标记的位置来计算处理材料的面积的漂移量。 处理材料的区域的位置根据计算的漂移量被校正。
-
97.发明授权Probe for near-field microscope, the method for manufacturing the probe and scanning probe microscope using the probe 有权用于近场显微镜的探头，使用探头制造探头和扫描探针显微镜的方法公开(公告)号：US07241987B2
公开(公告)日：2007-07-10
申请号：US11196104
申请日：2005-08-03
Applicant: Yuika Saito , Takashi Murakami , Satoshi Kawata , Yasushi Inoue , Kazuhito Tsukagoshi , Masato Iyoki
Inventor： Yuika Saito , Takashi Murakami , Satoshi Kawata , Yasushi Inoue , Kazuhito Tsukagoshi , Masato Iyoki
CPC classification number: G01N21/658 , G01N2021/656 , G01Q60/22 , Y10S977/849 , Y10S977/862
Abstract: In a manufacture of a probe for a scattering type near-field microscope, there is provided a method of coating, with a high reproducibility, uniform metal particles efficiently inducing a surface enhanced Raman scattering. It has been adapted such that, in the probe for the scattering type near-field microscope, one part or all of the probe due to an interaction of at least an evanescent field is coated by metal particles which don't mutually adhere and have a particle diameter of 10 nm or larger and 50 nm or smaller in radius of curvature.
Abstract translation: 在用于散射型近场显微镜的探针的制造中，提供了一种以高再现性涂覆均匀的金属颗粒有效地引起表面增强的拉曼散射的方法。 已经适应使得在用于散射型近场显微镜的探针中，由至少一个消逝场的相互作用引起的探针的一部分或全部被不相互粘附的金属颗粒涂覆，并且具有 粒径为10nm以上且50nm以下的曲率半径。
-
98.发明授权公开(公告)号：US07232995B2
公开(公告)日：2007-06-19
申请号：US11185657
申请日：2005-07-20
Applicant: Osamu Takaoka , Masatoshi Yasutake , Shigeru Wakiyama , Naoya Watanabe
Inventor： Osamu Takaoka , Masatoshi Yasutake , Shigeru Wakiyama , Naoya Watanabe
IPC: G21K7/00
Abstract: The kind of a particle is determined by pressing a hard atomic force microscope stylus having a spring constant equal to or larger than 300 N/m onto a particle to be removed and detecting bending quantity relative to a press force and a kind of a stylus used for removing the particle is changed in accordance with the kind of the particle.
Abstract translation: 颗粒的种类通过将具有等于或大于300N / m的弹簧常数的硬质原子力显微镜触针压到待除去的颗粒上并相对于压力和使用的触针的种类检测弯曲量来确定 用于除去颗粒的物质根据颗粒的种类而改变。
-
公开(公告)号：US07187166B2
公开(公告)日：2007-03-06
申请号：US10809555
申请日：2004-03-25
Applicant: Yoshiharu Sugano
Inventor： Yoshiharu Sugano
CPC classification number: G01Q60/14
Abstract: An electrical property evaluation apparatus for measuring an electrical property of an object includes a magnetic field generating mechanism that generates a magnetic field in a target area on the object, and a magnetic sensor for measuring the magnetic field near the target area. A cantilever having a conducting probe is supported so that the probe can be brought into contact with the target area. A bending measurement mechanism measures an amount of bending of the cantilever when the probe is brought into contact with the object. A control section controls a moving mechanism to maintain the bending amount of the cantilever constant. A voltage source applies a voltage to the probe, and an electrical property measuring section measures a current or an electrical resistance between the probe and the object in contact with each other.
Abstract translation: 用于测量物体的电性能的电气性能评估装置包括产生目标区域中的物体的磁场的磁场产生机构和用于测量目标区域附近的磁场的磁传感器。 支撑具有导电探针的悬臂，使得探针能够与目标区域接触。 弯曲测量机构测量当探针与物体接触时悬臂的弯曲量。 控制部控制移动机构，使悬臂的弯曲量保持恒定。 电压源向探针施加电压，电性能测量部分测量探头和物体之间的电流或电阻彼此接触。
-
公开(公告)号：US07173261B2
公开(公告)日：2007-02-06
申请号：US11059434
申请日：2005-02-16
Applicant: Takashi Ogawa , Seiji Morita
Inventor： Takashi Ogawa , Seiji Morita
IPC: G21K5/10
CPC classification number: H01J37/3005 , H01J37/222 , H01J2237/28 , H01J2237/3174
Abstract: In an image noise prevention method in a composite system of a scanning electron microscope (SEM) and a focused ion beam apparatus (FIB), noise generated during a blanking period of the FIB is prevented from entering an image generated by the SEM by adjustment of scanning cycles of the FIB and the SEM.
Abstract translation: 在扫描电子显微镜（SEM）和聚焦离子束装置（FIB）的复合系统中的图像噪声预防方法中，通过调整FIB产生的图像，防止在FIB的消隐期间产生的噪声 扫描周期FIB和SEM。
-
-
-
-
-
-
-
-
-
Search Results
179
records
(took 0.02 seconds)
