公开(公告)号：US5962843A

公开(公告)日：1999-10-05

申请号：US895917

申请日：1997-07-17

Applicant: Timothy Wayne Sinor ,  Joseph Paul Estrera

Inventor： Timothy Wayne Sinor ,  Joseph Paul Estrera

IPC: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01J40/14

CPC classification number: H01J31/506 ,  H01J1/34 ,  H01J29/38 ,  H01J2201/3423

Abstract: A night vision device includes an image intensifier tube, which includes a photocathode responsive both to white light and to infrared light to release photoelectrons. The photocathode is particularly sensitive to infrared light at the 980 nm wavelength, and has desirable spectral response characteristics.

Abstract translation: 夜视装置包括图像增强管，其包括响应白光和红外光以释放光电子的光电阴极。 光电阴极对980nm波长的红外光特别敏感，具有期望的光谱响应特性。

公开(公告)号：US5898269A

公开(公告)日：1999-04-27

申请号：US863493

申请日：1997-05-27

Applicant: Aaron W. Baum ,  James Edward Schneider, Jr.

Inventor： Aaron W. Baum ,  James Edward Schneider, Jr.

IPC: H01J37/06 ,  G03F7/20 ,  H01J1/34 ,  H01J3/02 ,  H01J7/18 ,  H01J27/04 ,  H01J37/073 ,  H01J40/06

CPC classification number: G03F7/70375 ,  H01J27/04 ,  H01J3/021 ,  H01J37/073 ,  H01J2201/3423 ,  H01J2237/045 ,  H01J2237/06333 ,  H01J2237/28 ,  H01J2237/31754

Abstract: An electron beam source includes a cathode having an electron emission surface including an active area for emission of electrons and a cathode shield assembly including a conductive shield disposed in proximity to the electron emission surface of the cathode. The shield has an opening aligned with the active area. The electron beam source further includes a device for stimulating emission of electrons from the active area of the cathode, electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the cathode at high vacuum. The cathode may be a negative electron affinity photocathode formed on a light-transmissive substrate. The shield protects non-emitting areas of the emission surface from contamination and inhibits cathode materials from contaminating components of the electron beam source. The cathode may be moved relative to the opening in the shield so as to align an new active area with the opening. Getter materials and sources of activation material may be incorporated into the shield assembly.

Abstract translation: 电子束源包括具有电子发射表面的阴极，该电子发射表面包括用于发射电子的有源区和包括设置在阴极的电子发射表面附近的导电屏蔽的阴极屏蔽组件。 屏蔽罩具有与活动区域对齐的开口。 电子束源还包括用于刺激来自阴极的有源区域的电子的发射的装置，用于将电子形成电子束的电子光学器件和用于将阴极保持在高真空的真空外壳。 阴极可以是形成在透光基板上的负电子亲和光电阴极。 屏蔽保护发射表面的不发射区域免受污染，并阻止阴极材料污染电子束源的部件。 阴极可以相对于屏蔽件中的开口移动，以将新的有效区域与开口对准。 吸气材料和活化材料源可以并入屏蔽组件中。

公开(公告)号：US5723871A

公开(公告)日：1998-03-03

申请号：US214319

申请日：1994-03-17

Applicant: Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

Inventor： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

IPC: H01J1/34 ,  H01J3/02 ,  H01L29/201 ,  H01L29/161

CPC classification number: H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

Abstract: A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

公开(公告)号：US4907051A

公开(公告)日：1990-03-06

申请号：US193502

申请日：1988-05-12

Applicant: Shaw Ehara

Inventor： Shaw Ehara

IPC: H01J1/34 ,  H01J40/06 ,  H01J43/08 ,  H01L31/0248

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A photocathode with high photoelectric conversion ratio over an extended wavelength range of incident light has a hetero junction formed between thin films of a p-type amorphous silicon alloy having energy gap matching the energy of the incident light and an n-type semiconductor with small work function or large coefficient of secondary electron emission.

Abstract translation: 在入射光的扩展波长范围内具有高光电转换比的光电阴极具有在具有与入射光的能量匹配的能隙的p型非晶硅合金的薄膜和小工作的n型半导体之间形成的异质结 二次电子发射功能或大系数。

公开(公告)号：US4751423A

公开(公告)日：1988-06-14

申请号：US933923

申请日：1986-11-24

Applicant: Bernard Munter ,  Paul de Groot ,  Claude Weisbuch ,  Yves Henry

Inventor： Bernard Munter ,  Paul de Groot ,  Claude Weisbuch ,  Yves Henry

IPC: H01J1/34 ,  H01J31/26 ,  H01J40/06

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A photocathode having a low dark current comprises a first layer consisting of P.sup.+ type semiconductor material which is transparent to all wavelengths of the light to be detected, a second layer consisting of P.sup.+ type semiconductor in which the forbidden band is of sufficiently small width to convert the photons of the light to be detected into electron-hole pairs, at least one intercalary layer located within the second layer and consisting of P-type or N-type semiconductor material for creating a potential barrier with respect to the second layer, the thickness of said intercalary layer being of sufficiently low value to permit the passage of electrons by tunnel effect with high probability but of sufficiently high value to stop the greater part of a hole current, a metallic electrode for biasing the photocathode in order to accelerate the electrons of the electron-hole pairs created within the second layer by the light, a last layer for reducing the energy-gap potential with respect to the second layer in order to emit into the vacuum the electrons which have thus been accelerated.

Abstract translation: 具有低暗电流的光电阴极包括由对待检测光的所有波长透明的P +型半导体材料构成的第一层，由禁带宽度足够小的P +型半导体构成的第二层，以转换 要被检测的光的光子到电子 - 空穴对中，位于第二层内的至少一个层间层，由用于产生相对于第二层的势垒的P型或N型半导体材料构成，厚度 的所述闰层具有足够低的值，以允许以很高的概率通过隧道效应的电子，但是具有足够高的值以阻止大部分空穴电流，用于偏置光电阴极的金属电极以加速电子的 通过光产生在第二层内的电子 - 空穴对，用于降低相对于t的能隙电势的最后一层 o第二层，以便将真空中的电子发射到真空中。

公开(公告)号：US4713353A

公开(公告)日：1987-12-15

申请号：US881967

申请日：1986-07-03

Applicant: Rudolf Forster ,  Suso Weber ,  Hans-Jurgen Pyka

Inventor： Rudolf Forster ,  Suso Weber ,  Hans-Jurgen Pyka

IPC: H01J9/12 ,  H01J29/38 ,  H01L31/00

CPC classification number: H01J9/12 ,  H01J29/38 ,  H01J2201/3423

Abstract: A method of producing a transparent photocathode comprises applying a multi-layer wafer to a carrier service so that the wafer projects beyond the carrier on all sides, effecting a chemical denudation on the substrate and after the chemical denudation on the substrate removing at least the overhanging parts of the multi-layer wafer mechanically. Chemical denudations are advantageously made by etching. The substrate comprises a gallium arsenide. The subsequent layers in the active photocathode semiconductor layer are applied by an epitaxial process.

Abstract translation: 制造透明光电阴极的方法包括将多层晶片应用于载体服务，使得晶片在所有侧面上突出超过载体，在基板上进行化学剥蚀，并且在基板上的化学剥蚀之后至少去除突出部分 多层晶片的部分机械地。 通过蚀刻有利地进行化学剥蚀。 衬底包括砷化镓。 通过外延工艺施加有源光电阴极半导体层中的后续层。

公开(公告)号：US4709185A

公开(公告)日：1987-11-24

申请号：US743221

申请日：1985-06-10

Applicant: Arthur M. E. Hoeberechts ,  Henricus A. M. Van Hal ,  Harm Tolner ,  Gerardus G. P. Van Gorkom

Inventor： Arthur M. E. Hoeberechts ,  Henricus A. M. Van Hal ,  Harm Tolner ,  Gerardus G. P. Van Gorkom

IPC: H01J1/30 ,  H01J1/13 ,  H01J1/308 ,  H01J1/32 ,  H01J1/34 ,  H01J9/02 ,  H01J9/04 ,  H01J9/12 ,  C23C14/00

CPC classification number: H01J1/32 ,  H01J1/13 ,  H01J1/308 ,  H01J1/34 ,  H01J2201/3423

Abstract: An electron-emitting surface is provided with a material reducing the electron work function, which is obtained from a suitable reaction. The reaction mixture or the product to be decomposed, for example CsN.sub.3, is present in a surface depression of a semiconductor body, while one or more pn junctions act as a heating diode. Upon heating, cesium is released and deposited on the electron-emitting surface.

Abstract translation: 电子发射表面设置有从合适的反应获得的降低电子功函数的材料。 反应混合物或待分解的产物（例如CsN 3）存在于半导体本体的表面凹陷中，而一个或多个pn结用作加热二极管。 加热时，铯释放并沉积在电子发射表面上。

公开(公告)号：US4687922A

公开(公告)日：1987-08-18

申请号：US797060

申请日：1985-11-12

Applicant: Michel G. Lemonier ,  Maurice L. J. Petit

Inventor： Michel G. Lemonier ,  Maurice L. J. Petit

IPC: H04N5/225 ,  H01J1/34 ,  H01J9/12 ,  H01J29/44 ,  H01J29/45 ,  H01J31/26 ,  H01L27/148 ,  H04N5/232 ,  H04N5/235 ,  H01J31/08 ,  H01J40/06 ,  H01J40/16 ,  H01L25/00

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J31/26 ,  H01L27/148 ,  H01J2201/3423 ,  H01L2224/48091

Abstract: The invention relates to an image detector for a camera operating in a "day" mode and a "night" mode. The detector comprises an evacuated envelope containing a semitransparent photocathode for the transmission of incident photons or for converting photons into photoelectrons, depending on whether the mode is "day" or "night", respectively. The detector also comprises a detector capable of converting the incident photons or the photoelectrons into an electrical image signal. The image detector further includes electronic means for focussing the photoelectrons onto the detector, and optical means for focussing the photons onto the photocathode or onto the detector. The photocathode comprises a thin layer having at least one active layer of a III-V n-type material. The detector consists of a two-dimensional charge transfer device. The electronic means for focussing the photoelectrons on the charge transfer device comprises proximity focussing means.

Abstract translation: 本发明涉及一种以“日”模式和“夜”模式操作的摄像机的图像检测器。 检测器包括分别根据模式是“日”还是“夜”，包含用于透射入射光子或用于将光子转换成光电子的半透明光电阴极的真空外壳。 检测器还包括能够将入射的光子或光电子转换为电图像信号的检测器。 图像检测器还包括用于将光电子聚焦到检测器上的电子装置和用于将光子聚焦到光电阴极或检测器上的光学装置。 光电阴极包括具有III-V n型材料的至少一个活性层的薄层。 检测器由二维电荷转移装置组成。 用于将光电子聚焦在电荷转移装置上的电子装置包括接近聚焦装置。

公开(公告)号：US4075654A

公开(公告)日：1978-02-21

申请号：US735333

申请日：1976-10-26

Applicant: Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

Inventor： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC: H01J1/34 ,  H01J9/12 ,  H01J29/45 ,  H01L27/14 ,  H01L29/161

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J29/451 ,  H01J2201/3423

Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.

公开(公告)号：US3986065A

公开(公告)日：1976-10-12

申请号：US517762

申请日：1974-10-24

Applicant: Jacques Isaac Pankove

Inventor： Jacques Isaac Pankove

IPC: H01J1/32 ,  H01J1/34 ,  H01J39/06 ,  H01J1/30 ,  H01J19/24

CPC classification number: H01J1/34 ,  H01J1/32 ,  H01J2201/3423

Abstract: A high emission of electrons, as a result of negative electron affinity, has been achieved from an insulating nitride coated with a film of an electropositive work function reducing material.

Abstract translation: 由负电子亲和力导致的高电子发射已经由涂覆有正电功能降低功能材料的膜的绝缘氮化物实现。