Abstract:
A method of calibrating a tunable laser having a distributed Bragg reflector includes, aligning a reflection peak of the distributed Bragg reflector with a target cavity mode of a plurality of cavity modes defined by a total optical path length inside a resonant cavity of the tunable laser. The method includes aligning a resultant lasing mode with a target wavelength of an output wavelength grid. The resultant lasing mode is formed by alignment of the reflection peak of the distributed Bragg reflector with the target cavity mode. The method also includes setting a target output power and a target extinction ratio of the tunable laser.
Abstract:
We disclose an optical buffer having a plurality of optical ports. In some embodiments, an optical signal to be stored may be injected into the buffer through any one of the optical ports and then may be ejected from the buffer, after being stored therein for a selectable amount of time, through any one of the optical ports as well. This feature advantageously enables the optical buffer to also function as an optical switch or router. In an example embodiment, the optical buffer comprises two optical recirculation loops, each of which can store the optical signal by causing it to circulate therein. The buffer is configured to compensate optical losses incurred by the optical signal during this circulation by transferring the optical signal from one loop to the other through an optical amplifier. Due to the latter feature, the optical buffer may be able to store an optical signal, with an acceptable OSNR, for a significantly longer time than certain conventional optical buffers.
Abstract:
An apparatus includes a laser that includes an optical gain medium and first and second optical ring-resonators. The optical gain medium and the optical ring-resonators are serially optically connected together to form one or more segments of an optical cavity of the laser. One of the optical ring-resonators has a Mach-Zehnder interferometer forming an internal optical waveguide segment of the one of the optical ring-resonators.
Abstract:
A bi-section type GaN-based semiconductor laser device that has a configuration and a structure in which damage is less likely to be caused in a region in a saturable absorption region that faces a first light emission region is provided. The semiconductor laser device includes a first light emission region, a second light emission region, a saturable absorption region sandwiched by the foregoing light emission regions, a first electrode, and a second electrode. Laser light is emitted from an end face on a second light emission region side thereof. The second electrode is configured of a first portion, a second portion, and a third portion. 1
Abstract:
A semiconductor laser comprises an electrically isolated active section and at least one noise reducing section and operates on a ground state transition of a quantum dot array having inhomogeneous broadening greater than 10 nm. The laser preferably emits more than 10 optical modes such that a total relative intensity noise of each optical mode is less than 0.2% in the 0.001 GHz to 10 GHz range. The spectral power density is preferably higher than 2 mW/nm. An optical transmission system and a method of operating a quantum dot laser with low relative intensity noise of each optical mode are also disclosed.
Abstract:
A laser device capable of preventing deterioration of a light signal and a controlling method therefor are provided. A wavelength tunable laser module provided with a resonator including the wavelength tunable filter and a semiconductor light amplifier having a phase adjustment region and a light amplifying region, in which a wavelength margin between a peak transmission wavelength of a wavelength tunable filter and a mode hop occurring wavelength on a short wave side is smaller than that on a long wave side includes: a wavelength tunable laser module controller including an optical output sampling portion for detecting light intensity of light emitted from the resonator, a dither signal source for generating a dither signal for varying a phase adjustment signal to be applied to the phase adjustment region so that the detected light intensity becomes the maximum, and an FM signal source for generating an FM signal for oscillating the phase adjustment signal to be applied to the phase adjustment region with a period shorter than a variation period of the dither signal. The optical output sampling portion detects the light intensity in synchronization with oscillation of the phase adjustment signal by the FM signal.
Abstract:
Provided is a self-pulsating laser diode including: a distributed feedback (DFB) section serving as a reflector; a gain section connected to the DFB section and having an as-cleaved facet at one end; a phase control section interposed between the DFB section and the gain section; and an external radio frequency (RF) input portion applying an external RF signal to at least one of the DFB section and the gain section.
Abstract:
A laser-induced optical wiring apparatus is provided wherein optical wiring is realized by digital operations of a laser oscillator. The apparatus includes optical ring resonator formed of a loop-shaped optical waveguide on substrate. At least two optical gain sections are provided on the optical ring resonator. When each optical gain section is activated, a laser oscillator including the optical ring resonator and optical gain sections is enabled to oscillate. In this state, the gain of at least one of the optical gain sections is changed in accordance with an input signal, thereby changing the optical route gain of the optical ring resonator to change the oscillation state of the laser oscillator. A change in the laser oscillation state is detected by the optical gain section other than the at least one optical gain section, whereby an output signal is acquired.
Abstract:
An photonic device, comprising one section of a material which is different from the material of another section such that the two sections present different optical birefringent index values. This causes a first set of polarization modes to move in a spectral space with a different velocity than a second set of polarization modes. A bias current, or voltage, is used for controlling the overall birefringence effect in the device. The biasing for controlling the birefringence effect is performed such the TE modes and the TM modes of the device are made to coincide in their respective spectral position. Thus the device is made insensitive, or presents substantially reduced sensitivity, to the polarization of any incoming optical signal.
Abstract:
In a semiconductor laser device (10) having different facet reflectivities, an electrode disposed on a stripe ridge (107a) is divided into four electrode parts (1), (2), (3), and (4), and a larger injection current is injected to an electrode part that is closer to a light emission facet side. Further, a carrier density distribution in an active layer that is opposed to the stripe ridge can be matched to a light intensity distribution in the active layer, thereby preventing degradation in high output characteristic due to destabilization of a transverse mode and reduction in gain which are caused by spatial hole burning.