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25 条记录 (耗时 0.034 秒)

    Self-pulsating laser diode
    1.
    发明授权
    Self-pulsating laser diode 失效
    自脉冲激光二极管

    公开(公告)号：US07813388B2

    公开(公告)日：2010-10-12

    申请号：US11932937

    申请日：2007-10-31

    申请人： Kyung Hyun Park ,  Hyun Sung Ko ,  Young Ahn Leem ,  Min Yong Jeon ,  Eun Deok Sim ,  Sung Bock Kim

    发明人： Kyung Hyun Park ,  Hyun Sung Ko ,  Young Ahn Leem ,  Min Yong Jeon ,  Eun Deok Sim ,  Sung Bock Kim

    IPC分类号： H01S3/098

    CPC分类号： H01S5/0625 ,  H01S5/0658

    摘要： Provided is a self-pulsating laser diode including: a distributed feedback (DFB) section serving as a reflector; a gain section connected to the DFB section and having an as-cleaved facet at one end; a phase control section interposed between the DFB section and the gain section; and an external radio frequency (RF) input portion applying an external RF signal to at least one of the DFB section and the gain section.

    摘要翻译： 提供了一种自脉动激光二极管，包括：用作反射器的分布反馈（DFB）部分; 连接到DFB部分并且在一端具有劈裂小面的增益部分; 相位控制部，其插入在所述DFB部和所述增益部之间; 以及外部射频（RF）输入部分，将外部RF信号施加到DFB部分和增益部分中的至少一个。

    Apparatus and method for wavelength conversion and clock signal extraction using semiconductor optical amplifiers
    2.
    发明授权
    Apparatus and method for wavelength conversion and clock signal extraction using semiconductor optical amplifiers 有权
    使用半导体光放大器进行波长转换和时钟信号提取的装置和方法

    公开(公告)号：US07277222B2

    公开(公告)日：2007-10-02

    申请号：US11491646

    申请日：2006-07-24

    申请人： Dong Churl Kim ,  Min Yong Jeon ,  Young Ahn Leem ,  Eun Deok Sim ,  Kyung Hyun Park ,  Sung Bock Kim

    发明人： Dong Churl Kim ,  Min Yong Jeon ,  Young Ahn Leem ,  Eun Deok Sim ,  Kyung Hyun Park ,  Sung Bock Kim

    IPC分类号： H01S3/00

    CPC分类号： H04B10/299

    摘要： Provided is an apparatus and method for simultaneous optical wavelength conversion and optical clock signal extraction using semiconductor optical amplifiers (SOAs). The apparatus includes: a wavelength converter receiving a pump beam having input information and a probe beam having a different wavelength from the pump beam, and outputting the pump beam with an overshoot shifted to a red wavelength and an undershoot shifted to a blue wavelength due to non-linear characteristics and self-phase modulation of semiconductor optical amplifiers (SOAs) and the probe beam delivered the input information from the pump beam; an optical divider dividing output paths of the probe beam to which the input information has been delivered and the pump beam having the overshoot and the undershoot; a converted-wavelength extractor filtering the probe beam received from the optical divider; and a clock data regenerator obtaining a pseudo return-to-zero (PRZ) signal from the pump beam received from the optical divider and extracting a clock signal from the PRZ signal.The apparatus and method can simultaneously perform wavelength conversion and optical clock signal extraction on an NRZ signal using an optical method, without converting the NRZ signal into an electrical signal.

    摘要翻译： 提供了一种使用半导体光放大器（SOA）同时进行光波长转换和光时钟信号提取的装置和方法。 该装置包括：波长转换器，其接收具有输入信息的泵浦光束和具有与泵浦光束不同的波长的探测光束，并且由于偏移到红色波长的过冲和由于由于 半导体光放大器（SOA）的非线性特性和自相位调制以及探测光束从泵浦光束传送输入信息; 分割器分割输入信息已被传送到的探测光束的输出路径和具有过冲和下冲的泵浦光束; 转换波长提取器对从分光器接收的探测光束进行滤波; 以及时钟数据再生器，从从光分路器接收的泵浦光束获得伪归零（PRZ）信号，并从PRZ信号提取时钟信号。 该装置和方法可以使用光学方法在NRZ信号上同时进行波长转换和光时钟信号提取，而不将NRZ信号转换成电信号。

    SELF-PULSATING LASER DIODE
    3.
    发明申请
    SELF-PULSATING LASER DIODE 失效
    自激激光二极管

    公开(公告)号：US20080137694A1

    公开(公告)日：2008-06-12

    申请号：US11932937

    申请日：2007-10-31

    申请人： Kyung Hyun PARK ,  Hyun Sung Ko ,  Yong Ahn Leem ,  Min Yong Jeon ,  Eun Deok Sim ,  Sung Bock Kim

    发明人： Kyung Hyun PARK ,  Hyun Sung Ko ,  Yong Ahn Leem ,  Min Yong Jeon ,  Eun Deok Sim ,  Sung Bock Kim

    IPC分类号： H01S3/098 ,  H01S3/08

    CPC分类号： H01S5/0625 ,  H01S5/0658

    摘要： Provided is a self-pulsating laser diode including: a distributed feedback (DFB) section serving as a reflector; a gain section connected to the DFB section and having an as-cleaved facet at one end; a phase control section interposed between the DFB section and the gain section; and an external radio frequency (RF) input portion applying an external RF signal to at least one of the DFB section and the gain section.

    摘要翻译： 提供了一种自脉动激光二极管，包括：用作反射器的分布反馈（DFB）部分; 连接到DFB部分并且在一端具有劈裂小面的增益部分; 相位控制部，其插入在所述DFB部和所述增益部之间; 以及外部射频（RF）输入部分，将外部RF信号施加到DFB部分和增益部分中的至少一个。

    Method of manufacturing semiconductor optical device
    5.
    发明授权
    Method of manufacturing semiconductor optical device 有权
    制造半导体光学器件的方法

    公开(公告)号：US06593162B1

    公开(公告)日：2003-07-15

    申请号：US10185137

    申请日：2002-06-27

    申请人： Kyung Hyun Park ,  Yong Soon Baek ,  Sung Bock Kim ,  Kwang Ryong Oh

    发明人： Kyung Hyun Park ,  Yong Soon Baek ,  Sung Bock Kim ,  Kwang Ryong Oh

    IPC分类号： H01L2100

    CPC分类号： B82Y20/00 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/106 ,  H01S5/2081 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/34373

    摘要： The present invention relates to a method of manufacturing a semiconductor optical device. The present invention discloses a method of manufacturing an optical device of a planar buried heterostructure (PBH) type by which an active layer region of a taper shape at both ends is patterned, an undoped InP layer is selectively grown in order to reduce the propagation loss and two waveguides are simultaneously formed by means of a self-aligned method, thus simplifying the process to increase repeatability and yield.

    摘要翻译： 本发明涉及半导体光学器件的制造方法。 本发明公开了一种制造平面埋入异质结构（PBH）型的光学器件的方法，通过该方法，在两端形成锥形的有源层区域被图案化，选择性地生长未掺杂的InP层，以便降低传播损耗 并且通过自对准方法同时形成两个波导，从而简化了增加重复性和产率的过程。

    Electroabsorption duplexer
    7.
    发明授权
    Electroabsorption duplexer 有权
    电吸收双工器

    公开(公告)号：US07583869B2

    公开(公告)日：2009-09-01

    申请号：US11451743

    申请日：2006-06-13

    申请人： Young Shik Kang ,  Je Ha Kim ,  Sung Bock Kim ,  Yong Duck Chung ,  Kwang Seong Choi

    发明人： Young Shik Kang ,  Je Ha Kim ,  Sung Bock Kim ,  Yong Duck Chung ,  Kwang Seong Choi

    IPC分类号： G02B6/12

    CPC分类号： H01S5/026 ,  H01S5/0262 ,  H01S5/0265 ,  H01S5/1014 ,  H01S5/22 ,  H01S5/50

    摘要： An electroabsorption (EA) duplexer in which an optical amplifier, a photodetector, and an optical modulator are monolithically integrated to obtain a high radio frequency (RF) gain in radio-over fiber (RoF) link optical transmission technology is provided. The EA duplexer includes a substrate, a separation area, an optical detection/modulation unit, and an optical amplification unit. The separation area includes a first epitaxial layer formed of at least one material layer on the substrate. The first epitaxial layer functions as a first optical waveguide. The optical detection/modulation unit includes a second epitaxial layer formed of at least one material layer on the first epitaxial layer to detect and modulate an optical signal. The second epitaxial layer functions as a second optical waveguide. The optical amplification unit includes the second optical waveguide and a third epitaxial layer formed of at least one material layer on the second epitaxial layer to amplify an optical signal. The third epitaxial layer functions as a third optical waveguide. The optical amplification unit is electrically separated from the optical detection/modulation unit by the separation area and is disposed on at least one side of the optical detection/modulation unit.

    摘要翻译： 提供了其中光放大器，光电检测器和光调制器被单片集成以获得无线电光纤（RoF）链路光传输技术中的高射频（RF）增益的电吸收（EA）双工器。 EA双工器包括基板，分离区，光检测/调制单元和光放大单元。 分离区域包括由衬底上的至少一个材料层形成的第一外延层。 第一外延层用作第一光波导。 光检测/调制单元包括由第一外延层上的至少一个材料层形成的第二外延层，以检测和调制光信号。 第二外延层用作第二光波导。 光放大单元包括第二光波导和由第二外延层上的至少一个材料层形成的第三外延层，以放大光信号。 第三外延层用作第三光波导。 光放大单元通过分离区域与光检测/调制单元电分离，并设置在光检测/调制单元的至少一侧。

    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20120145999A1

    公开(公告)日：2012-06-14

    申请号：US13193690

    申请日：2011-07-29

    申请人： Dongwoo Suh ,  Sung Bock Kim ,  Hojun Ryu

    发明人： Dongwoo Suh ,  Sung Bock Kim ,  Hojun Ryu

    IPC分类号： H01L29/775 ,  B82Y40/00 ,  B82Y99/00 ,  H01L21/336

    CPC分类号： H01L29/0673 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/068 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696 ,  Y10S977/762

    摘要： Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.

    摘要翻译： 提供半导体器件及其制造方法。 该半导体器件包括：衬底，其包括第一顶表面，比第一顶表面低的第二顶表面和设置在第一和第二顶表面之间的第一垂直表面，形成在第一顶表面下的第一源极/漏极区域 表面，在一个方向上从第一垂直表面延伸并与第二顶表面间隔开的第一纳米线，从第一纳米线的沿一个方向的侧表面延伸的第二纳米线，与第二顶表面间隔开， 并且包括第一源极/漏极区域，第一纳米线上的栅电极以及第一纳米线与栅电极之间的介电层。

    Method of fabricating a quantum device
    10.
    发明授权
    Method of fabricating a quantum device 失效
    制造量子器件的方法

    公开(公告)号：US6074936A

    公开(公告)日：2000-06-13

    申请号：US93195

    申请日：1998-06-08

    申请人： Jeong Rae Ro ,  Sung Bock Kim ,  El Hang Lee

    发明人： Jeong Rae Ro ,  Sung Bock Kim ,  El Hang Lee

    IPC分类号： H01L21/30 ,  H01L21/20 ,  H01L21/205 ,  H01L21/311 ,  H01L21/36 ,  H01L21/00

    CPC分类号： B82Y10/00 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/31116 ,  Y10S438/962

    摘要： A method of fabricating quantum wire structures and devices, and quantum dot structures and devices comprise steps of: depositing an insulating layer on a semiconductor substrate, forming a line patterns and a square patterns in an insulating layer, forming a V-grooved patterned structures and a reverse quadrilateral pyramid patterned structures by thermal etching to evaporate portions of the quantum well layer that are not protected by line-shaped mask regions and square-shaped mask regions of the masking layer, forming a quantum wires and a quantum dots by alternatively growing a barrier layer and an active layer on a V-grooved patterned substrate and a reverse quadrilateral pyramid patterned substrate.

    摘要翻译： 一种制造量子线结构和器件的方法，以及量子点结构和器件包括以下步骤：在半导体衬底上沉积绝缘层，在绝缘层中形成线图案和方形图案，形成V形槽图案结构和 通过热蚀刻将反向四边形金字塔图案化的结构蒸发成量子阱层的未被掩模层的线状掩模区域和方形掩模区域保护的部分，通过交替生长形成量子线和量子点 阻挡层和V沟槽图案化衬底上的有源层和反向四边形金字塔图案化衬底。