公开(公告)号：US20180237942A1

公开(公告)日：2018-08-23

申请号：US15752985

申请日：2016-08-02

申请人： Sumitomo Electric Industries, Ltd.

发明人： Keiji Wada ,  Hideyuki Doi ,  Hironori Itoh

IPC分类号： C30B25/08 ,  H01L29/16 ,  H01L21/02 ,  H01L21/205 ,  C30B25/16

摘要： In forming of a silicon carbide layer, when an X axis indicates a first value representing, in percentage, a value obtained by dividing a flow rate of silane by a flow rate of hydrogen and a Y axis indicates a second value representing a flow rate of ammonia in sccm, the first value and the second value fall within a quadrangular region surrounded by first coordinates, second coordinates, third coordinates, and fourth coordinates in XY plane coordinates. The first coordinates are (0.05, 6.5×10−4). The second coordinates are (0.05, 4.5×10−3). The third coordinates are (0.22, 1.2×10−2). The fourth coordinates are (0.22, 1.3×10−1). After the forming of the silicon carbide layer, an average value of carrier concentration of the silicon carbide layer is more than or equal to 1×1015 cm−3 and less than or equal to 2×1016 cm−3.

公开(公告)号：US09920451B2

公开(公告)日：2018-03-20

申请号：US14216434

申请日：2014-03-17

申请人： Crystal Solar, Incorporated ,  Bozena Kaszuba

发明人： Visweswaren Sivaramakrishnan ,  Kedarnath Sangam ,  Tirunelveli S. Ravi ,  Andrzej Kaszuba ,  Quoc Vinh Truong

IPC分类号： C30B25/12 ,  C30B25/08 ,  C30B25/10 ,  C30B35/00

CPC分类号： C30B25/12 ,  C30B25/08 ,  C30B25/105 ,  C30B35/005

摘要： An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the chamber walls. Sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

公开(公告)号：US20170370021A1

公开(公告)日：2017-12-28

申请号：US15544839

申请日：2015-12-23

申请人： LG SILTRON INC.

发明人： Man-Kee CHO ,  Dong-Ho KANG

IPC分类号： C30B25/14 ,  C23C16/44 ,  C30B25/08 ,  C30B25/12

CPC分类号： C30B25/14 ,  C23C16/4401 ,  C23C16/4405 ,  C30B25/08 ,  C30B25/12 ,  H01L21/6719

摘要： Provided is a re-operation preparation process of a reaction chamber in which epitaxial growth is performed on a wafer. The re-operation preparation process of the reaction chamber includes disposing a susceptor provided in the reaction chamber and on which the wafer is seated at a preset first position and setting a flow rate of a hydrogen gas introduced through a main valve so that the flow rate is greater than that of a hydrogen gas introduced through a slit valve and moving the susceptor to a preset second position and setting an amount of hydrogen gas introduced through the main valve while the susceptor is maintained at the second position so that the amount of hydrogen gas is less than that of hydrogen gas introduced through the slit valve. Thus, moisture and contaminants stagnant in a lower portion of the reaction chamber may be smoothly discharged along a flow of the hydrogen gas toward a discharge hole.

公开(公告)号：US20170260628A1

公开(公告)日：2017-09-14

申请号：US15508683

申请日：2015-07-08

申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Hajime FUJIKURA

IPC分类号： C23C16/455 ,  C23C16/46 ,  C30B25/18 ,  C30B25/10 ,  C30B25/14 ,  C30B29/40 ,  C23C16/448 ,  C30B25/08

CPC分类号： C23C16/455 ,  C23C16/448 ,  C23C16/4488 ,  C23C16/46 ,  C30B25/08 ,  C30B25/10 ,  C30B25/14 ,  C30B25/18 ,  C30B29/38 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/0262

摘要： There is provided a semiconductor manufacturing device that supplies a source gas to a substrate installed in a reaction furnace and performs film formation processing to the substrate, including: a storage vessel which is disposed in the reaction furnace and which stores a metal raw material as a base of the source gas; an auxiliary vessel which is disposed at an upper side of the storage vessel in the reaction furnace and which is a bottomed vessel having an inlet port for the metal raw material; a connection pipe through which an outlet port for the metal raw material formed on the auxiliary vessel and an inside of the storage vessel are communicated with each other; a sealing plug for sealing the outlet port so as to be opened and closed freely; and heater units that heat an inside of the reaction furnace to a predetermined temperature so as to melt the metal raw material in the auxiliary vessel and the metal raw material in the storage vessel, and to a predetermined temperature required for film formation processing performed to the substrate.

公开(公告)号：US09644286B2

公开(公告)日：2017-05-09

申请号：US14126520

申请日：2012-07-24

申请人： Kazukuni Hara

发明人： Kazukuni Hara

IPC分类号： C30B25/08 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36 ,  C30B25/12

CPC分类号： C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B29/36

摘要： A silicon carbide single crystal manufacturing apparatus includes a vacuum chamber, a pedestal on which a seed crystal is disposed, an inlet of source gas, a reaction chamber extending from a bottom surface of the vacuum chamber toward the pedestal, a first heating device disposed around an outer periphery of the reaction chamber, a second heating device disposed around an outer periphery of the pedestal, and an outlet disposed outside the first and second heating devices in the vacuum chamber. After the source gas supplied from the reaction chamber is supplied toward the pedestal, the source gas is let flow outward in a radial direction of the silicon carbide single crystal between the reaction chamber and the silicon carbide single crystal and is discharged through the outlet.

公开(公告)号：US09523157B2

公开(公告)日：2016-12-20

申请号：US14126449

申请日：2012-05-17

申请人： Mikhail Yurievich Pogorelsky ,  Alexei Petrovich Shkurko ,  Alexei Nikolaevich Alexeev ,  Viktor Petrovich Chaly

发明人： Mikhail Yurievich Pogorelsky ,  Alexei Petrovich Shkurko ,  Alexei Nikolaevich Alexeev ,  Viktor Petrovich Chaly

IPC分类号： C30B25/08 ,  C30B25/18 ,  C30B23/02 ,  C23C14/24 ,  C30B29/38 ,  C30B29/40 ,  C30B25/14

CPC分类号： C30B25/186 ,  C23C14/243 ,  C30B23/02 ,  C30B25/08 ,  C30B25/14 ,  C30B29/38 ,  C30B29/403

摘要： The invention relates to the technology for producing three-dimensional monocrystals and can preferably be used in optoelectronics for manufacturing substrates for various optoelectronic devices, including light-emitting diodes that emit light in the ultraviolet region. The method for growing an AlN monocrystal by gas-phase epitaxy from a mixture containing a source of Al and NH3 comprises arranging the Al source and a substrate, with the growth surface of said substrate turned towards said Al source, opposite one another in a growth chamber, said source and substrate forming a growth zone, producing a flow of NH3 in the growth zone; and heating the Al source and the substrate to temperatures that ensure the growth of the AlN monocrystal on the substrate. The Al source used is only free Al, the substrate is pretreated with Ga and/or In, whereupon the Al source is cooled to a temperature of 800-900° C. and the substrate is annealed by being heated to a temperature of 1300-1400° C. with subsequent cooling of said substrate to the nitriding temperature of the growth surface of said substrate. The invention ensures a reduction in the extent of flaws in the AlN monocrystal being grown.

摘要翻译： 本发明涉及三维单晶的制造技术，可以优选用于制造用于各种光电器件的衬底的光电子器件，包括在紫外区发射光的发光二极管。 通过气相外延从含有Al和NH 3源的混合物生长AlN单晶的方法包括设置Al源和衬底，其中所述衬底的生长表面朝着所述Al源转动，在生长中彼此相对 所述源和底物形成生长区，在生长区中产生NH 3流; 并将Al源和衬底加热至确保衬底上AlN单晶生长的温度。 所使用的Al源仅为游离Al，基底用Ga和/或In预处理，于是Al源被冷却至800-900℃的温度，并且通过加热至1300℃的温度对基底进行退火， 随后将所述衬底冷却至所述衬底的生长表面的氮化温度。 本发明确保生长的AlN单晶中的缺陷程度的降低。

公开(公告)号：US20160312382A1

公开(公告)日：2016-10-27

申请号：US15104482

申请日：2014-12-17

申请人： LPE S.P.A.

发明人： Francesco COREA ,  Danilo CRIPPA ,  Laura GOBBO ,  Marco MAUCERI ,  Vincenzo OGLIARI ,  Franco PRETI ,  Marco PUGLISI ,  Carmelo VECCHIO

IPC分类号： C30B25/12 ,  H01L21/677 ,  C30B29/36 ,  H01L21/687 ,  C30B25/08 ,  C23C16/458

CPC分类号： C30B25/12 ,  C23C16/4581 ,  C23C16/4584 ,  C23C16/4585 ,  C30B25/08 ,  C30B29/36 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/68707 ,  H01L21/68735 ,  H01L21/68757 ,  H01L21/68764 ,  H01L21/68785

摘要： A reaction chamber of a reactor for epitaxial growth comprises:—a wall (1) with a recess,—a susceptor (7) comprising a body and a relief, wherein said body is placed in said recess in rotational manner with respect to said wall (1),—a discoid supporting element (8), having a shape adapted to be laid stably on said relief, having a size such to protrude radially from said relief and adapted to support one or more substrates to be subjected to epitaxial growth, and—a flat covering (91, 92) located over said wall (1) and a having hole (10) at said discoid supporting element (8); wherein the shape of said hole (10) corresponds to the shape of said discoid supporting element (8); wherein said covering (92) has at least one hollow guide (11, 12) for the passage of a device (16) for loading/unloading said discoid supporting element (8), wherein said hollow guide (11, 12) extends from an edge of said covering (92) to said hole (10).

摘要翻译： 用于外延生长的反应器的反应室包括：具有凹槽的壁（1）， - 包括主体和浮雕的基座（7），其中所述主体相对于所述壁以旋转方式放置在所述凹部中 （1）， - 盘状支撑元件（8），其具有适于被稳定地铺设在所述浮雕上的形状，具有从所述浮雕径向突出的尺寸，并且适于支撑要进行外延生长的一个或多个基板， 和位于所述壁（1）上方的平坦覆盖物（91,92）和在所述盘状支撑元件（8）处具有孔（10）; 其中所述孔（10）的形状对应于所述盘状支撑元件（8）的形状; 其中所述覆盖物（92）具有用于装载（卸载）所述盘状支撑元件（8）的装置（16）的至少一个中空导向件（11,12），其中所述中空导向件（11,12）从 所述覆盖物（92）的边缘到所述孔（10）。

公开(公告)号：US20160273128A1

公开(公告)日：2016-09-22

申请号：US15037323

申请日：2014-09-03

申请人： LG SILTRON INC.

发明人： Yu-Jin Kang

IPC分类号： C30B25/10 ,  C23C16/455 ,  C30B29/06 ,  C30B25/08 ,  C30B25/12

CPC分类号： C30B25/10 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/4585 ,  C30B25/08 ,  C30B25/12 ,  C30B25/165 ,  C30B29/06

摘要： An epitaxial wafer growth apparatus for growing an epitaxial layer on a wafer using a process gas flow is disclosed. The apparatus comprises a reaction chamber; upper and lower liners surrounding the reaction chamber; a susceptor in the reaction chamber, the susceptor configured to support the wafer thereon; a preheat ring seated on a top face of the lower liner, the preheat ring being coplanar with the susceptor, and the preheat ring being spaced from the the susceptor; and at least one protrusion extending downwards from the preheat ring, wherein the protrusion has a circumferential contact face with a circumferential side face of the lower liner, wherein the protrusion is configured to fix the preheat ring to the lower liner to keep a uniform space between the preheat ring and susceptor along the preheat ring.

摘要翻译： 公开了一种用于使用工艺气体流在晶片上生长外延层的外延晶片生长装置。 该装置包括反应室; 围绕反应室的上下衬板; 在所述反应室中的基座，所述基座构造成在其上支撑所述晶片; 位于所述下衬套的顶面上的预热环，所述预热环与所述基座共面，并且所述预热环与所述基座间隔开; 以及从所述预热环向下延伸的至少一个突起，其中所述突起具有与所述下衬垫的周向侧面的周向接触面，其中所述突起被构造成将所述预热环固定到所述下衬垫上，以保持所述预热环之间的均匀空间 预热环和沿预热环的基座。

公开(公告)号：US20160251775A1

公开(公告)日：2016-09-01

申请号：US15032433

申请日：2015-02-27

申请人： NIPPON STEEL & SUMITOMO METAL CORPORATION

发明人： Takashi AIGO ,  Wataru ITO ,  Tatsuo FUJIMOTO

IPC分类号： C30B25/20 ,  C30B25/10 ,  H01L21/02 ,  C23C16/32 ,  C23C16/44 ,  C30B25/08 ,  C30B29/36

CPC分类号： C30B25/20 ,  C23C16/325 ,  C23C16/44 ,  C30B25/08 ,  C30B25/10 ,  C30B25/165 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02661

摘要： The present invention provides a method for producing an epitaxial silicon carbide wafer comprising epitaxially growing SiC on an SiC substrate to produce an epitaxial SiC wafer during which further reducing stacking faults and comet defects than the conventional technologies to obtain an epitaxial SiC wafer having a high quality epitaxial film. The method for producing the epitaxial silicon carbide wafer is characterized in that a pre-growth atmosphere gas flowing into the growth furnace before the start of epitaxial growth contains hydrogen gas and has a balance of an inert gas and unavoidable impurities, and the hydrogen gas is contained in 0.1 to 10.0 vol % with respect to the inert gas.

摘要翻译： 本发明提供了一种用于制造外延碳化硅晶片的方法，其包括在SiC衬底上外延生长SiC以产生外延SiC晶片，其中与常规技术相比，进一步减少堆垛层错和彗星缺陷，以获得具有高质量的外延SiC晶片 外延膜。 外延碳化硅晶片的制造方法的特征在于，在开始外延生长之前流入生长炉内的预成长气氛气体含有氢气，余量为惰性气体和不可避免的杂质，氢气为 相对于惰性气体含有0.1〜10.0体积％。

公开(公告)号：US09416778B2

公开(公告)日：2016-08-16

申请号：US13448316

申请日：2012-04-16

申请人： Seongshik Oh ,  Yong-Seung Kim

发明人： Seongshik Oh ,  Yong-Seung Kim

IPC分类号： C30B23/06 ,  F04B37/02 ,  C30B25/08 ,  C30B23/02

CPC分类号： F04B37/02 ,  C30B23/02 ,  C30B23/06 ,  C30B25/08

摘要： A self-gettering differential pump for a molecular beam epitaxy system has a collimator with a length greater than its diameter mounted in front of a source in extended port geometry, wherein the reactant delivered by the source also serves as a gettering agent.

摘要翻译： 用于分子束外延系统的自吸式差分泵具有长度大于其直径的准直器，其尺寸安装在延伸端口几何形状的源的前方，其中由源输送的反应物也用作吸气剂。