公开(公告)号：US5582424A

公开(公告)日：1996-12-10

申请号：US375460

申请日：1995-01-19

申请人： Hiroyuki Okuyama ,  Kei Iizuka

发明人： Hiroyuki Okuyama ,  Kei Iizuka

IPC分类号： B60R21/20 ,  B60R21/215 ,  B60R21/2165 ,  B60R21/16

CPC分类号： B60R21/2165

摘要： An occupant restraint device includes a container having an opening, a lid covering the opening of the container, and an inflatable occupant restraint cushion within the container. The cushion has a cushion portion adjacent the lid. The lid includes a first portion arranged to be first contacted by the inflatable occupant restraint cushion when it inflates and a second portion adjacent to the first portion. The first and second portions are perforated to provide different rupturabilities such that the first portion provides the greatest rupturability.

摘要翻译： 乘员约束装置包括具有开口的容器，覆盖容器的开口的盖以及容器内的可充气乘员约束衬垫。 垫子具有靠近盖子的缓冲部分。 所述盖包括第一部分，所述第一部分布置成当所述充气乘员约束垫充气时首先接触，并且所述第二部分与所述第一部分相邻。 第一和第二部分被穿孔以提供不同的破裂性，使得第一部分提供最大的破裂性。

公开(公告)号：US5268918A

公开(公告)日：1993-12-07

申请号：US838925

申请日：1992-02-21

申请人： Katsuhiro Akimoto ,  Hiroyuki Okuyama

发明人： Katsuhiro Akimoto ,  Hiroyuki Okuyama

IPC分类号： H01S5/04 ,  H01S5/32 ,  H01S5/327 ,  H01S3/19

CPC分类号： H01S5/327 ,  H01S5/041 ,  H01S5/3213

摘要： A double heterojunction II-VI group compound semiconductor laser has a substrate of GaAs or Gap, a first cladding layer, an active layer, and a second cladding layer which are successively deposited on the substrate by way of epitaxial growth. One or both of the first and second cladding layers have a composition of ZnMgSSe.

摘要翻译： 双异质结II-VI族化合物半导体激光器具有通过外延生长连续沉积在衬底上的GaAs或Gap衬底，第一覆层，有源层和第二覆层。 第一和第二包覆层中的一个或两个具有ZnMgSSe的组成。

公开(公告)号：US08616797B2

公开(公告)日：2013-12-31

申请号：US13257363

申请日：2010-03-25

申请人： Toshimi Kamitani ,  Hiroyuki Okuyama

发明人： Toshimi Kamitani ,  Hiroyuki Okuyama

IPC分类号： B43K7/00 ,  C09D11/18

CPC分类号： C09D11/18 ,  B41M5/3275 ,  B41M5/3335 ,  B41M5/3372 ,  B41M5/3375 ,  B43K7/00 ,  B43K8/00 ,  B43L19/0025 ,  C09D5/26 ,  C09D11/102 ,  C09D11/106 ,  C09D11/17

摘要： In order to provide a thermosensitive decolorable ink composition which can readily be decolored with simple heating by rubbing and the like without using a microcapsule and is not developed again in color even after stored at very low temperature (−50° C. or lower) and which is excellent in stability with passage of time and has a vivid hue intensity, the above thermosensitive decolorable ink composition is provided with a constitution in which it contains as a colorant, color developing particles comprising at least a leuco dye, a developer and a crystalline substance and in which it further contains a decolorant comprising an amorphous resin.

摘要翻译： 为了提供一种热敏非脱色油墨组合物，其可以在不使用微胶囊的情况下通过摩擦等简单加热容易地进行脱色，并且即使在非常低的温度（-50℃或更低）下储存后也不再显色，并且 其具有优异的稳定性，随着时间的推移并且具有鲜明的色调强度，上述热敏不可脱墨油墨组合物具有其中含有着色剂的构造，显色剂至少包含无色染料，显色剂和结晶 其中它还含有包含无定形树脂的脱色剂。

公开(公告)号：US07550775B2

公开(公告)日：2009-06-23

申请号：US11622719

申请日：2007-01-12

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/16 ,  H01L33/24 ,  H01S5/0213 ,  H01S5/10 ,  H01S5/3202 ,  H01S5/32341

摘要： A GaN semiconductor light-emitting element is provided. The GaN semiconductor light-emitting element includes an island-type seed region composed of a GaN-based compound semiconductor disposed on a substrate; an underlying layer having a three-dimensional shape composed of a GaN-based compound semiconductor, disposed on at least the seed region; a first GaN-based compound semiconductor layer of a first conductivity type, an active layer composed of a GaN-based compound semiconductor, and a second GaN-based compound semiconductor layer of a second conductivity type disposed in that order on the underlying layer; a first electrode electrically connected to the first GaN-based compound semiconductor layer; and a second electrode disposed on the second GaN-based compound semiconductor layer. The top face of the seed region is the A plane, and at least one side face of the underlying layer is the S plane.

摘要翻译： 提供GaN半导体发光元件。 GaN半导体发光元件包括由设置在基板上的GaN类化合物半导体构成的岛型种子区域; 设置在至少种子区域上的具有由GaN类化合物半导体构成的三维形状的下层; 第一导电类型的第一GaN基化合物半导体层，由GaN基化合物半导体构成的有源层和第二导电类型的第二GaN基化合物半导体层依次布置在下层上; 电连接到第一GaN基化合物半导体层的第一电极; 以及设置在第二GaN基化合物半导体层上的第二电极。 种子区域的顶面是A平面，底层的至少一个侧面是S平面。

公开(公告)号：US20070285687A1

公开(公告)日：2007-12-13

申请号：US11452058

申请日：2006-06-13

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： G06F15/00

CPC分类号： G06F3/1205 ,  G06F3/1204 ,  G06F3/1219 ,  G06F3/1238 ,  G06F3/1239 ,  G06F3/1244 ,  G06F3/1279 ,  G06K15/02 ,  G06K15/1822 ,  G06K15/1848

摘要： An image forming apparatus according to the invention is characterized by including: a first input unit that inputs image data having attribute information and color information; a second input unit that inputs designated attribute information and designated color information designated by a user; a limited image generating unit that generates, when attribute information of a certain area in the image data and the designated attribute information coincide with each other and color information of the area and the designated color information coincide with each other, limited image data for limiting printing of the area from the image data; and an image recording unit that prints the limited image data. According to the image forming apparatus, it is possible to easily limit printing of a specific image designated in document data without changing the document data itself.

摘要翻译： 根据本发明的图像形成装置的特征在于包括：第一输入单元，其输入具有属性信息和颜色信息的图像数据; 输入由用户指定的指定的属性信息和指定的颜色信息的第二输入单元; 有限图像生成单元，当图像数据中的特定区域的属性信息和指定的属性信息彼此一致并且区域的颜色信息和指定的颜色信息彼此一致时，生成用于限制打印的限制图像数据 的图像数据; 以及打印有限图像数据的图像记录单元。 根据图像形成装置，可以容易地限制在文档数据中指定的特定图像的打印，而不改变文档数据本身。

公开(公告)号：US07298506B2

公开(公告)日：2007-11-20

申请号：US10391803

申请日：2003-03-20

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： G06F15/00 ,  G06K1/00 ,  G06K9/00

CPC分类号： H04N1/00843 ,  H04N1/00848 ,  H04N1/00864 ,  H04N1/00872

摘要： An image forming apparatus has a collating section which collates image information from a scanner with a specific image and determines whether or not there is a same portion, and a line delay section which outputs the image information after delaying the image information in accordance with time spent on collation processing. Because a dedicated memory is unnecessary due to timing between processing of the collation processing section and other processings being coordinated at the line delay section, a large reduction in costs can be realized.

摘要翻译： 图像形成装置具有：对照部，其将具有特定图像的来自扫描仪的图像信息进行核对，并确定是否存在相同的部分;以及行延迟部，其根据花费时间延迟图像信息后输出图像信息 对照处理。 由于归一化处理部分的处理和在线延迟部分协调的其他处理之间的定时不需要专用存储器，因此可以实现成本的大幅度降低。

公开(公告)号：US20070164269A1

公开(公告)日：2007-07-19

申请号：US11620511

申请日：2007-01-05

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： H01L29/06

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02647 ,  H01L21/02661 ,  H01L33/007

摘要： A method for forming an underlayer composed of a GaN-based compound semiconductor is provided. In this method, at the time of epitaxial growth of an underlayer on the surface of a sapphire substrate, no gap is generated between the underlayer and the surface of the sapphire substrate. The method for forming an underlayer composed of a GaN-based compound semiconductor includes the steps of forming strip seed layers composed of a GaN-based compound semiconductor on the surface of a sapphire substrate, forming a crystal growth promoting layer composed of a GaN-based compound semiconductor on the top surfaces and both the side surfaces of the seed layers, and on the exposed surfaces of the sapphire substrate, and epitaxially growing an underlayer composed of a GaN-based compound semiconductor from the parts of the crystal growth promoting layer.

摘要翻译： 提供一种形成由GaN基化合物半导体构成的底层的方法。 在该方法中，在蓝宝石衬底的表面上的底层外延生长时，在底层和蓝宝石衬底的表面之间不产生间隙。 用于形成由GaN基化合物半导体构成的底层的方法包括以下步骤：在蓝宝石衬底的表面上形成由GaN基化合物半导体构成的带状晶种层，形成由GaN基组成的晶体生长促进层 在种子层的顶表面和两个侧表面上以及蓝宝石衬底的暴露表面上的化合物半导体，以及从晶体生长促进层的部分外延生长由GaN基化合物半导体构成的底层。

公开(公告)号：US06206962B1

公开(公告)日：2001-03-27

申请号：US09178749

申请日：1998-10-27

申请人： Satoru Kijima ,  Hiroyuki Okuyama

发明人： Satoru Kijima ,  Hiroyuki Okuyama

IPC分类号： C30B2300

CPC分类号： H01L33/28 ,  H01L21/02395 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02485 ,  H01L21/02507 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631

摘要： An n-type cladding layer, the first guiding layer, an active layer, the second guiding layer, a p-type cladding layer, a backing layer, a contact layer, a superlattice layer and a cap layer are stacked in this order on an n-type substrate. The cap layer comprises p-type ZnTe and has a thickness of less than 10 nm. The contact layer is comprised of p-type ZnSe and the concentration of nitrogen added to the contact layer is in the range of 1 to 2×1018 cm−3. The backing layer comprises p-type ZnSSe mixed crystal and the concentration of nitrogen added to the backing layer is higher than that of the contact layer, in the range of 1 to 3×1018 cm−3. Before the corresponding Group II-VI compound semiconductor layers are grown by the MBE method, the temperature of cells is once increased. The operating voltage of the semiconductor light emitting device can be lowered by increasing the carrier concentrations of the Group II-VI compound semiconductor layers between the p-side electrode and the p-type cladding layer.

摘要翻译： 将n型包覆层，第一引导层，有源层，第二引导层，p型覆层，背衬层，接触层，超晶格层和覆盖层依次堆叠在 n型衬底。 盖层包括p型ZnTe，其厚度小于10nm。 接触层由p型ZnSe组成，并且加入到接触层中的氮浓度在1至2×10 18 cm -3的范围内。 背衬层包括p型ZnSSe混合晶体，添加到背衬层中的氮浓度高于接触层的浓度，范围为1至3×10 18 cm -3。 在通过MBE法生长相应的II-VI族化合物半导体层之前，电池的温度一度增加。 通过增加p侧电极和p型覆层之间的II-VI族化合物半导体层的载流子浓度，能够降低半导体发光元件的工作电压。

公开(公告)号：US5872023A

公开(公告)日：1999-02-16

申请号：US829214

申请日：1997-03-31

申请人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

发明人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

IPC分类号： H01L33/00 ,  H01L33/28 ,  H01S5/32 ,  H01S5/327 ,  H01S3/19

CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/327 ,  H01S5/3201

摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of II group elements such as Zn, Hg, Cd, Mg and at least one kind of VI group elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.a/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).

摘要翻译： 半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4） 沉积在有源层（4）上的第二导电类型的第二包覆层（6）。 第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素的II / VI化合物半导体和至少一种VI族元素构成 作为S，Se，Te。 第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTATA/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

公开(公告)号：US5234842A

公开(公告)日：1993-08-10

申请号：US848128

申请日：1992-03-09

申请人： Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Masao Ikeda

发明人： Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Masao Ikeda

IPC分类号： H01L21/36 ,  H01L21/425 ,  H01L29/227 ,  H01L31/0296 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00

CPC分类号： H01L33/285 ,  H01L21/425 ,  H01L29/227 ,  H01L31/02963 ,  H01L33/0087

摘要： A method of producing a p-type CdS wherein oxygen is doped into a CdS layer at a concentration in a range between 10.sup.16 and 10.sup.19 atomic/cm.sup.3.

摘要翻译： 一种生产p型CdS的方法，其中将氧以1016和1019原子/ cm3之间的浓度掺杂到CdS层中。