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公开(公告)号：US5268918A
公开(公告)日：1993-12-07
申请号：US838925
申请日：1992-02-21
CPC分类号： H01S5/327 , H01S5/041 , H01S5/3213
摘要： A double heterojunction II-VI group compound semiconductor laser has a substrate of GaAs or Gap, a first cladding layer, an active layer, and a second cladding layer which are successively deposited on the substrate by way of epitaxial growth. One or both of the first and second cladding layers have a composition of ZnMgSSe.
摘要翻译： 双异质结II-VI族化合物半导体激光器具有通过外延生长连续沉积在衬底上的GaAs或Gap衬底，第一覆层，有源层和第二覆层。 第一和第二包覆层中的一个或两个具有ZnMgSSe的组成。
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2.发明授权Method of fabricating of light emitting device with controlled lattice mismatch 失效具有受控晶格失配的发光器件的制造方法
公开(公告)号：US5872023A
公开(公告)日：1999-02-16
申请号：US829214
申请日：1997-03-31
申请人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
发明人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
CPC分类号： H01L33/28 , H01L33/0087 , H01S5/327 , H01S5/3201
摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of II group elements such as Zn, Hg, Cd, Mg and at least one kind of VI group elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.a/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).
摘要翻译： 半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4） 沉积在有源层（4）上的第二导电类型的第二包覆层（6）。 第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素的II / VI化合物半导体和至少一种VI族元素构成 作为S，Se，Te。 第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTATA/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。
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公开(公告)号：US5234842A
公开(公告)日：1993-08-10
申请号：US848128
申请日：1992-03-09
申请人： Hiroyuki Okuyama , Katsuhiro Akimoto , Masao Ikeda
发明人： Hiroyuki Okuyama , Katsuhiro Akimoto , Masao Ikeda
IPC分类号： H01L21/36 , H01L21/425 , H01L29/227 , H01L31/0296 , H01L33/28 , H01L33/30 , H01S5/00
CPC分类号： H01L33/285 , H01L21/425 , H01L29/227 , H01L31/02963 , H01L33/0087
摘要： A method of producing a p-type CdS wherein oxygen is doped into a CdS layer at a concentration in a range between 10.sup.16 and 10.sup.19 atomic/cm.sup.3.
摘要翻译： 一种生产p型CdS的方法，其中将氧以1016和1019原子/ cm3之间的浓度掺杂到CdS层中。
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公开(公告)号：US5515393A
公开(公告)日：1996-05-07
申请号：US101725
申请日：1993-08-04
申请人： Hiroyuki Okuyama , Katsuhiro Akimoto , Takao Miyajima , Masafumi Ozawa , Yuko Morinaga , Futoshi Hiei , Kazushi Nakano , Toyoharu Ohata
发明人： Hiroyuki Okuyama , Katsuhiro Akimoto , Takao Miyajima , Masafumi Ozawa , Yuko Morinaga , Futoshi Hiei , Kazushi Nakano , Toyoharu Ohata
CPC分类号： B82Y20/00 , H01S5/327 , H01S5/2004 , H01S5/3211 , H01S5/3409 , H01S5/347
摘要： A semiconductor laser using a II-VI compound semiconductor as the material for cladding layers, capable of emitting a blue to green light is disclosed. In an aspect of the semiconductor laser, an n-type ZnSe buffer layer, an n-type ZnMgSSe cladding layer, an active layer made of, for example, ZnCdSe, a p-type ZnMgSSe cladding layer and a p-type ZnSe contact layer are stacked in sequence on an n-type GaAs substrate. A p-side electrode such as an Au/Pd electrode is provided in contact with the p-type ZnSe contact layer. An n-side electrode such as an In electrode is provided on the back surface of the n-type GaAs substrate. In another aspect of the semiconductor laser, an n-type optical guiding layer made of ZnSSe, ZnMgSSe or ZnSe is provided between the n-type ZnMgSSe cladding layer and the active layer, and a p-type optical guiding layer made of ZnSSe, ZnMgSSe or ZnSe is provided between the p-type ZnMgSSe cladding layer and the active layer.
摘要翻译： 公开了一种半导体激光器，其使用能够发出蓝色至绿色光的II-VI族化合物半导体作为覆盖层的材料。 在半导体激光器的一个方面，n型ZnSe缓冲层，n型ZnMgSSe覆层，由例如ZnCdSe，p型ZnMgSSe覆层和p型ZnSe接触层制成的有源层 依次堆叠在n型GaAs衬底上。 提供与p型ZnSe接触层接触的诸如Au / Pd电极的p侧电极。 在n型GaAs衬底的背表面上设置诸如In电极的n侧电极。 在半导体激光器的另一方面，在n型ZnMgSSe包层和有源层之间设置由ZnSSe，ZnMgSSe或ZnSe制成的n型导光层，以及由ZnSSe，ZnMgSSe制成的p型光导层 或ZnSe被提供在p型ZnMgSSe包覆层和有源层之间。
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5.发明授权Semiconductor light emitting device with lattice-matching and lattice-mismatching 失效具有晶格匹配和晶格失配的半导体发光器件
公开(公告)号：US5633514A
公开(公告)日：1997-05-27
申请号：US570376
申请日：1995-12-11
申请人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
发明人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
CPC分类号： H01L33/28 , H01L33/0087 , H01S5/327 , H01S5/3201
摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of group II elements such as Zn, Hg, Cd, Mg and at least one kind of group VI elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.Aa/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).
摘要翻译： 半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4） 沉积在有源层（4）上的第二导电类型的第二包覆层（6）。 第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素和至少一种VI族元素的II / VI族化合物半导体制成， 作为S，Se，Te。 在第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTAAa/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。
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公开(公告)号：US5375134A
公开(公告)日：1994-12-20
申请号：US232410
申请日：1994-04-25
CPC分类号： H01S5/327 , H01S5/041 , H01S5/3211 , H01S5/3213
摘要： A semiconductor laser has a first cladding layer of a first conductivity type, an active layer, and a second cladding layer of a second conductivity type, which are successively deposited on a semiconductor substrate by epitaxial growth. The first cladding layer and/or the second cladding layer is made of a compound semiconductor material of a zincblende crystal structure containing Mg.
摘要翻译： 半导体激光器具有第一导电类型的第一包层，有源层和第二导电类型的第二包覆层，其通过外延生长连续地沉积在半导体衬底上。 第一包层和/或第二包层由包含Mg的锌辉石晶体结构的化合物半导体材料制成。
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公开(公告)号：US09373274B2
公开(公告)日：2016-06-21
申请号：US13268245
申请日：2011-10-07
申请人： Hiroyuki Okuyama
发明人： Hiroyuki Okuyama
IPC分类号： H01L27/15 , G09F9/33 , H01L27/32 , H01L25/075 , H01L33/20
CPC分类号： H01L25/0753 , G09F9/33 , H01L25/167 , H01L27/3206 , H01L33/16 , H01L33/20 , H01L33/62 , H01L2924/0002 , H04N9/30 , H01L2924/00
摘要： Disclosed herein is a light-emitting device including a plurality of first light-emitting elements mounted in a matrix form on a common wiring board. Each of the first light-emitting elements has a single crystal semiconductor multilayer structure and is a semiconductor element in the form of a chip that emits light in a given band of wavelengths. When attention is focused on the plurality of first light-emitting elements that belong in a given area of all the plurality of first light-emitting elements, the orientations of the common crystal axes of the first light-emitting elements adjacent to each other at least in one of the row and column directions differ.
摘要翻译： 这里公开了一种发光装置，其包括以矩阵形式安装在公共布线板上的多个第一发光元件。 每个第一发光元件具有单晶半导体多层结构，并且是以给定波长范围发光的芯片形式的半导体元件。 当关注属于所有多个第一发光元件的给定区域中的多个第一发光元件时，至少彼此相邻的第一发光元件的公共晶轴的取向至少 在行和列方向之一不同。
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公开(公告)号：US09132692B2
公开(公告)日：2015-09-15
申请号：US13698200
申请日：2011-06-14
摘要： In order to provide a writing instrument in which a writing direction can be visually recognized in a broad range at a visual part of a pen tip and which can surely write to end of writing, the writing instrument is endowed with a constitution in which a pen tip is equipped with a porous member as a writing part and a holding member holding the above porous member and having at least one ink guiding part through which an ink contained in a barrel is provided to a writing part held by the holding member which is a visible part enabling to visually recognize a writing direction, wherein an area ratio of the visible part is 40% or more of the pen tip protruding from a tip part of the writing instrument.
摘要翻译： 为了提供一种书写工具，其中书写方向可以在笔尖的视觉部分的宽范围内被视觉识别，并且可以肯定写入书写结束，书写工具被赋予其中笔 顶部配备有作为书写部分的多孔构件和保持上述多孔构件并具有至少一个墨水引导部分的保持构件，墨水引导部件将容纳在墨镜筒中的墨水通过该墨水引导部件设置到由保持构件保持的书写部件 可视部分能够可视地识别书写方向，其中可见部分的面积比是从书写工具的尖端突出的笔尖的40％或更多。
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公开(公告)号：US08993992B2
公开(公告)日：2015-03-31
申请号：US12432397
申请日：2009-04-29
申请人： Goshi Biwa , Hiroyuki Okuyama
发明人： Goshi Biwa , Hiroyuki Okuyama
CPC分类号： H01L33/325 , H01L24/05 , H01L33/0025 , H01L33/025 , H01L33/06 , H01L33/12 , H01L33/32 , H01L2224/04042 , H01L2224/05552 , H01L2224/0603 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2924/12041 , H01L2924/12042 , H01L2924/13091 , H01L2924/15788 , H01L2924/181 , H04N9/3155 , H04N9/3164 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A GaN based semiconductor light-emitting device is provided. The light-emitting device includes a first GaN based compound semiconductor layer of an n-conductivity type; an active layer; a second GaN based compound semiconductor layer; an underlying layer composed of a GaN based compound semiconductor, the underlying layer being disposed between the first GaN based compound semiconductor layer and the active layer; and a superlattice layer composed of a GaN based compound semiconductor doped with a p-type dopant, the superlattice layer being disposed between the active layer and the second GaN based compound semiconductor layer.
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10.发明申请公开(公告)号：US20110299867A1
公开(公告)日：2011-12-08
申请号：US13150673
申请日：2011-06-01
申请人： Hiromasa Tanaka , Eiichi Yamanishi , Hiroyuki Okuyama , Tetsuya Sadowara , Yoshihito Hiroe , Yasuaki Okamoto
发明人： Hiromasa Tanaka , Eiichi Yamanishi , Hiroyuki Okuyama , Tetsuya Sadowara , Yoshihito Hiroe , Yasuaki Okamoto
CPC分类号： G03G15/234 , G03G15/6508 , G03G15/6594 , G03G2215/00383 , G03G2215/00451 , G03G2215/00586
摘要： According to one embodiment, an image forming apparatus includes: a first paper feeding unit; a second paper feeding unit; a fixing unit configured to fix a developer image transferred onto a sheet; a conveying path configured to convey sheets; a receiving unit configured to receive an execution instruction for duplex printing for continuously printing an image on one surface and on the other surface of a sheet; an acquiring unit configured to acquire, in the printing on one surface, information concerning presence or absence of an image on the other surface; and a processor configured to change, in the printing on one surface, if a result of the acquisition concerning the sheet fed from the first paper feeding unit indicates that an image is present, a paper feeding unit from the first paper feeding unit to the second paper feeding unit and performs control for re-executing the duplex printing.
摘要翻译： 根据一个实施例，图像形成装置包括：第一送纸单元; 第二送纸单元; 固定单元，被配置为固定转印到片材上的显影剂图像; 输送路径，其构造成输送片材; 接收单元，被配置为接收用于双面打印的执行指令，用于在片材的一个表面和另一个表面上连续打印图像; 获取单元，被配置为在一个表面上的打印中获取关于另一个表面上的图像的存在或不存在的信息; 以及处理器，其被配置为在一个表面上的打印中，如果关于从所述第一供纸单元供给的所述纸张的获取的结果指示存在图像，则从所述第一供纸单元向所述第二供纸单元 进纸单元，并执行重新执行双面打印的控制。
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