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    STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN STT-MRAM DEVICES
    102.
    发明申请
    STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN STT-MRAM DEVICES 审中-公开

    公开(公告)号：US20180190900A1

    公开(公告)日：2018-07-05

    申请号：US15906154

    申请日：2018-02-27

    申请人： International Business Machines Corporation

    发明人： Anthony J. Annunziata ,  Gen P. Lauer ,  Janusz J. Nowak ,  Eugene J. O'Sullivan

    IPC分类号： H01L43/08 ,  H01L43/12

    CPC分类号： H01L43/08 ,  H01L43/02 ,  H01L43/12

    摘要： A method of making a magnetic random access memory device includes forming a magnetic tunnel junction (MTJ) on an electrode, the MTJ including a reference layer, a tunnel barrier layer, and a free layer; disposing a hard mask on the MTJ; etching sidewalls of the hard mask and MTJ to form a stack with a first width and redeposit metal along the MTJ sidewall; depositing a sacrificial dielectric layer on the hard mask, surface of the electrode, exposed sidewall of the hard mask and the MTJ, and on redeposited metal along the sidewall of the MTJ; removing a portion of the sacrificial dielectric layer from sidewalls of the hard mask and MTJ and redeposited metal from the MTJ sidewalls; and removing a portion of a sidewall of the MTJ and hard mask to provide a second width to the stack; wherein the second width is less than the first width.

    STRESS CONTROL IN MAGNETIC INDUCTOR STACKS
    103.
    发明申请
    STRESS CONTROL IN MAGNETIC INDUCTOR STACKS 审中-公开

    公开(公告)号：US20180005740A1

    公开(公告)日：2018-01-04

    申请号：US15196640

    申请日：2016-06-29

    申请人： International Business Machines Corporation

    发明人： Bruce B. Doris ,  Hariklia Deligianni ,  Eugene J. O'Sullivan ,  Naigang Wang

    IPC分类号： H01F3/02

    CPC分类号： H01F3/02 ,  H01F3/10 ,  H01F27/25

    摘要： A magnetic laminating structure and process for preventing substrate bowing include multiple film stack segments that include a first magnetic layer, at least one additional magnetic layer, and a dielectric spacer disposed between the first and at least one additional magnetic layers. A dielectric isolation layer is intermediate magnetic layers and on the sidewalls thereof. The magnetic layers are characterized by defined tensile strength and the multiple segments function to relive the stress as the magnetic laminating structure is formed, wherein the cumulative thickness of the magnetic layers is greater than 1 micron. Also described are methods for forming the magnetic laminating structure.

    Techniques for forming contacts for active BEOL
    109.
    发明授权
    Techniques for forming contacts for active BEOL 有权
    用于形成活动BEOL的触点的技术

    公开(公告)号：US09490164B1

    公开(公告)日：2016-11-08

    申请号：US14747103

    申请日：2015-06-23

    申请人： International Business Machines Corporation

    发明人： Sebastian U. Engelmann ,  Steve J. Holmes ,  Qinghuang Lin ,  Nathan P. Marchack ,  Eugene J. O'Sullivan

    IPC分类号： H01L21/44 ,  H01L21/768 ,  H01L43/12 ,  H01L21/311 ,  H01L23/532 ,  H01L27/22 ,  H01L23/522 ,  H01L23/528 ,  H01L43/08 ,  H01L43/02

    CPC分类号： H01L21/76829 ,  H01L21/76802 ,  H01L21/76807 ,  H01L27/222 ,  H01L43/12

    摘要： In one aspect, a method for forming a contact to a device is provided which includes the steps of: forming a conformal etch stop layer surrounding the device; forming a dielectric layer over and covering the device; forming a contact trench in the dielectric layer, wherein the contact trench is present over the device and extends down to, or beyond, the etch stop layer; exposing a contact region of the device within the contact trench by selectively removing a portion of the etch stop layer covering a top portion of the device; and filling the contact trench with a conductive material to form the contact to the device. Other methods for forming a contact to a device and also to BEOL wiring are provided as are device contact structures.

    摘要翻译： 在一个方面，提供了一种用于形成与器件的接触的方法，其包括以下步骤：形成围绕所述器件的共形蚀刻停止层; 在该装置上方形成介电层; 在所述电介质层中形成接触沟槽，其中所述接触沟槽存在于所述器件上并向下延伸至或超过所述蚀刻停止层; 通过选择性地去除覆盖设备的顶部的蚀刻停止层的一部分来暴露接触沟槽内的器件的接触区域; 以及用导电材料填充接触沟槽以形成与该器件的接触。 与设备接触结构一起提供了用于形成与器件的接触以及BEOL布线的其它方法。