Abstract:
RF filter structures are disclosed that may have multiple filter paths, which are provided by weakly coupled resonators. The filter paths may be interconnected so that additional filter paths may be realized between input and output terminals of the RF filter structures. In this manner, the weakly coupled resonators from the filter paths may be arranged in a matrix. In one embodiment, an RF filter structure includes a first filter path and a second filter path. The first filter path includes (at least) a first pair of weakly coupled resonators while a second filter path that includes (at least) a second pair of weakly coupled resonators. To interconnect the first filter path and the second filter path, a cross-coupling capacitive structure is electrically connected between the first filter path and the second filter path. As such, an additional filtering path may be realized through the interconnection provided by the cross-coupling capacitive structure.
Abstract:
Power supply circuitry, which includes a parallel amplifier and a parallel amplifier power supply, is disclosed. The power supply circuitry operates in either an average power tracking mode or an envelope tracking mode. The parallel amplifier power supply provides a parallel amplifier power supply signal. The parallel amplifier regulates an envelope power supply voltage based on an envelope power supply control signal using the parallel amplifier power supply signal, which provides power for amplification. During the envelope tracking mode, the envelope power supply voltage at least partially tracks an envelope of an RF transmit signal and the parallel amplifier power supply signal at least partially tracks the envelope power supply control signal. During the average power tracking mode, the envelope power supply voltage does not track the envelope of the RF transmit signal.
Abstract:
This disclosure relates generally to radio frequency (RF) filter structures. In one embodiment, an RF filter structure includes a first resonator and a second resonator. The second resonator is operably associated with the first resonator such that an energy transfer factor between the first resonator and the second resonator is less than 10%. The first resonator includes a first inductor and a first capacitive structure electrically connected to the first inductor, while the second resonator has a second inductor and a second capacitive structure electrically connected to the second inductor. A displacement between the first inductor and the second inductor is less than or equal to half a maximum lateral width of the second inductor. To set an electric coupling coefficient, a first cross-coupling capacitive structure is electrically connected between the first resonator and the second resonator.
Abstract:
The present disclosure relates to a tunable slow-wave transmission line. The tunable slow-wave transmission line is formed in a multi-layer substrate and includes an undulating signal path. The undulating signal path includes at least two loop structures, wherein each loop structure includes at least two via structures connected by at least one intra-loop trace. The undulating signal path further includes at least one inter-loop trace connecting the at least two loop structures. The tunable slow-wave transmission line includes a first ground structure disposed along the undulating signal path. Further, the tunable slow-wave transmission line includes one or more circuits that may alter a signal transmitted in the tunable slow-wave transmission line so as to tune a frequency of the signal.
Abstract:
A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 106 Ohm-cm.
Abstract:
A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 103 Ohm-cm.
Abstract:
RF PA circuitry includes an RF signal path, an adjustable component, a distortion compensation feedback loop including distortion compensation circuitry, RF noise filtering circuitry, and baseband noise filtering circuitry. The adjustable component is located in the RF signal path. The distortion compensation feedback loop is coupled in parallel with at least a portion of the RF signal path, and includes the distortion compensation circuitry. Further, the distortion compensation circuitry is configured to adjust one or more parameters of the adjustable component via a component adjustment signal based on a measurement of a signal at an output of the RF signal path. The RF noise filtering circuitry is coupled in the RF signal path and configured to attenuate noise therein. The baseband noise filtering circuitry is coupled between the distortion compensation circuitry and the adjustable component and configured to attenuate noise in the component adjustment signal.
Abstract:
RF communications circuitry, which includes a first group of RF power amplifier circuits and a first weakly coupled RF network, is disclosed. The first group of RF power amplifier circuits includes a first RF power amplifier circuit, which receives and amplifies a first RF amplifier input signal to provide a first RF amplifier output signal, and a second RF power amplifier circuit, which receives and amplifies a second RF amplifier input signal to provide a second RF amplifier output signal. The first weakly coupled RF network includes a first pair of weakly coupled RF resonators coupled to the first RF power amplifier circuit and a second pair of weakly coupled RF resonators coupled to the second RF power amplifier circuit.
Abstract:
RF communications circuitry includes an RF filter structure, which includes a group of resonators, a group of cross-coupling capacitive structures, and a group of egress/ingress capacitive structures, is disclosed. Each of the group of cross-coupling capacitive structures is coupled between two of the group of resonators. A first portion of the group of egress/ingress capacitive structures is coupled between a first connection node and the group of resonators. A second portion of the group of egress/ingress capacitive structures is coupled between a second connection node and the group of resonators.
Abstract:
RF communications circuitry, which includes a first RF filter structure and control circuitry, is disclosed. The first RF filter structure includes a pair of weakly coupled resonators and a first tunable RF filter. The control circuitry provides a first filter control signal. The first tunable RF filter receives and filters an upstream RF signal to provide a first filtered RF signal, such that a center frequency of the first tunable RF filter is based on the first filter control signal.