公开(公告)号：US20140030846A1

公开(公告)日：2014-01-30

申请号：US14043925

申请日：2013-10-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Toshinari SASAKI ,  Hideaki KUWABARA

IPC: H01L29/66

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.

Abstract translation: 在使用氧化物半导体作为有源层的薄膜晶体管中，为了防止用作有源层的氧化物半导体区域的组成，膜质量，界面等的变化，并且为了稳定化 薄膜晶体管的电气特性。 在其中使用第一氧化物半导体区域作为有源层的薄膜晶体管中，在第一氧化物半导体区域和用于薄的第一氧化物半导体区域的保护绝缘层之间形成具有比第一氧化物半导体区域低导电性的第二氧化物半导体区域 由此第二氧化物半导体区域用作第一氧化物半导体区域的保护层; 因此，可以防止第一氧化物半导体区域的组成变化或膜质量的劣化，并且能够稳定薄膜晶体管的电特性。

公开(公告)号：US20130299827A1

公开(公告)日：2013-11-14

申请号：US13947334

申请日：2013-07-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L29/12

CPC classification number: H01L29/78696 ,  H01L21/2636 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

公开(公告)号：US20130299822A1

公开(公告)日：2013-11-14

申请号：US13939468

申请日：2013-07-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Miyuki HOSOBA ,  Masayuki SAKAKURA ,  Yoshiaki OIKAWA

IPC: H01L27/12

CPC classification number: H01L21/477 ,  G02F1/133345 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US20130175523A1

公开(公告)日：2013-07-11

申请号：US13772692

申请日：2013-02-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Masashi TSUBUKU

IPC: H01L33/00

CPC classification number: H01L33/0041 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One of factors that increase the contact resistance at the interface between a first semiconductor layer where a channel is formed and source and drain electrode layers is a film with high electric resistance formed by dust or impurity contamination of a surface of a metal material serving as the source and drain electrode layers. As a solution, a first protective layer and a second protective layer including a second semiconductor having a conductivity that is less than or equal to that of the first semiconductor layer is stacked successively over source and drain electrode layers without exposed to air, the stack of films is used for the source and drain electrode layers.

Abstract translation: 增加在形成沟道的第一半导体层与源电极层与漏极电极层之间的界面处的接触电阻的因素之一是具有高电阻的膜，其由作为金属材料的金属材料的表面的灰尘或杂质污染形成 源极和漏极电极层。 作为解决方案，包括导电率小于或等于第一半导体层的导电率的第二半导体的第一保护层和第二保护层在不暴露于空气的情况下在源极和漏极电极层上依次层叠， 膜用于源电极层和漏电极层。

公开(公告)号：US20130140557A1

公开(公告)日：2013-06-06

申请号：US13727056

申请日：2012-12-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Kengo AKIMOTO ,  Yasuo NAKAMURA

IPC: H01L29/26

CPC classification number: H01L29/78696 ,  H01L21/02323 ,  H01L21/02565 ,  H01L21/32139 ,  H01L21/465 ,  H01L21/467 ,  H01L21/4763 ,  H01L21/47635 ,  H01L27/1225 ,  H01L29/0692 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/263 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.

公开(公告)号：US20130134417A1

公开(公告)日：2013-05-30

申请号：US13731649

申请日：2012-12-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

IPC: H01L29/20

CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/127 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/24 ,  H01L29/7869

Abstract: A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.

公开(公告)号：US20130069058A1

公开(公告)日：2013-03-21

申请号：US13651750

申请日：2012-10-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Atsushi UMEZAKI

IPC: H01L29/786

CPC classification number: H01L27/1225 ,  G02F1/13624 ,  H01L27/124 ,  H01L27/3276 ,  H01L29/7869

Abstract: With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. Due to the increase in the numbers of gate lines and signal lines, it is difficult to mount an IC chip having a driver circuit for driving the gate and signal lines by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit for driving the pixel portion are formed over one substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor is used. The driver circuit as well as the pixel portion is provided over the same substrate, whereby manufacturing costs are reduced.

公开(公告)号：US20250140572A1

公开(公告)日：2025-05-01

申请号：US19007727

申请日：2025-01-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Miyuki HOSOBA ,  Masayuki SAKAKURA ,  Yoshiaki OIKAWA

IPC: H01L21/477 ,  G02F1/1333 ,  G02F1/1368 ,  H01L21/02 ,  H10D30/67 ,  H10D86/01 ,  H10D86/40 ,  H10D86/60 ,  H10D99/00

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US20250055087A1

公开(公告)日：2025-02-13

申请号：US18724035

申请日：2022-12-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kazutaka KURIKI ,  Seiya SAITO ,  Teruaki OCHIAI ,  Kengo AKIMOTO

IPC: H01M50/136 ,  H01G11/28 ,  H01G11/50 ,  H01M4/02 ,  H01M4/04 ,  H01M4/38 ,  H01M4/525 ,  H01M50/105

Abstract: The relative position shifts of a positive electrode and a negative electrode occur owing to bending in charge or discharge, whereby uneven distribution is caused and potential varies. Not graphite but a lithium metal film is used as the negative electrode. A lithium metal film is formed over one side of the negative electrode current collector by an evaporation method or a sputtering method, and a laminated body is formed such that surfaces of two negative electrode current collectors where no film is formed are in contact with each other.

公开(公告)号：US20240394302A1

公开(公告)日：2024-11-28

申请号：US18791489

申请日：2024-08-01

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kengo AKIMOTO ,  Shigeru TAMAKI ,  Kunitaka YAMAMOTO ,  Isamu SHIGEMORI

IPC: G06F16/58 ,  G06F16/53 ,  G06F16/583 ,  G06F40/268 ,  G06N3/045

Abstract: An image retrieval system with high retrieval accuracy is provided. The image retrieval system includes a database and a processing portion. The database has a function of storing a plurality of pieces of database image data, and a database tag is linked to each of the plurality of pieces of database image data. The processing portion has a function of obtaining database image feature value data representing a feature value of the database image data for each piece of the database image data. The processing portion has a function of obtaining query image feature value data representing a feature value of the query image data. The processing portion has a function of calculating first similarity of the database image data to the query image data for each piece of the database image data. The processing portion has a function of obtaining a query tag linked to the query image data using some of the database tags.