公开(公告)号：US20130292767A1

公开(公告)日：2013-11-07

申请号：US13465064

申请日：2012-05-07

申请人： Bin Yang ,  Xia Li ,  Jun Yuan

发明人： Bin Yang ,  Xia Li ,  Jun Yuan

IPC分类号： H01L27/12 ,  H01L21/8238

CPC分类号： H01L21/823814 ,  H01L21/28026 ,  H01L21/823828 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/42376 ,  H01L29/47 ,  H01L29/66545 ,  H01L29/66621 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

摘要： A complementary metal-oxide-semiconductor (CMOS) device and methods of formation thereof are disclosed. In a particular embodiment, a CMOS device includes a silicon substrate, a dielectric insulator material on the silicon substrate, and an extension layer on the dielectric insulator material. The CMOS device further includes a gate in contact with a channel and in contact with an extension region. The CMOS device also includes a source in contact with the extension region and a drain in contact with the extension region. The extension region includes a first region in contact with the source and the gate and includes a second region in contact with the drain and the gate.

摘要翻译： 公开了一种互补金属氧化物半导体（CMOS）器件及其形成方法。 在特定实施例中，CMOS器件包括硅衬底，硅衬底上的介电绝缘体材料以及介电绝缘体材料上的延伸层。 CMOS器件还包括与沟道接触并与延伸区域接触的栅极。 CMOS器件还包括与延伸区域接触的源极和与延伸区域接触的漏极。 延伸区域包括与源极和栅极接触的第一区域，并且包括与漏极和栅极接触的第二区域。

公开(公告)号：US20130001553A1

公开(公告)日：2013-01-03

申请号：US13333482

申请日：2011-12-21

申请人： Christopher Vineis ,  James Carey ,  Xia Li

发明人： Christopher Vineis ,  James Carey ,  Xia Li

IPC分类号： H01L29/04 ,  H01L29/02 ,  H01L31/0236

CPC分类号： H01L31/02363 ,  H01L31/03529 ,  H01L31/103 ,  H01L31/1032 ,  H01L31/1035 ,  Y02E10/50

摘要： Optoelectronic devices, materials, and associated methods having increased operating performance are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material, a first doped region in the semiconductor material, a second doped region in the semiconductor material forming a junction with the first doped region, and a laser processed region associated with the junction. The laser processed region is positioned to interact with electromagnetic radiation. Additionally, at least a portion of a region of laser damage from the laser processed region has been removed such that the optoelectronic device has an open circuit voltage of from about 500 mV to about 800 mV.

摘要翻译： 提供了具有增加的操作性能的光电器件，材料和相关方法。 在一个方面，例如，光电子器件可以包括半导体材料，半导体材料中的第一掺杂区域，形成与第一掺杂区域的结的半导体材料中的第二掺杂区域和与第一掺杂区域相关联的激光处理区域 交界处 激光处理区域定位成与电磁辐射相互作用。 此外，已经去除了来自激光加工区域的激光损伤区域的至少一部分，使得光电子器件具有约500mV至约800mV的开路电压。

公开(公告)号：US08212327B2

公开(公告)日：2012-07-03

申请号：US12853172

申请日：2010-08-09

申请人： Neal T. Kurfiss ,  James E. Carey ,  Xia Li

发明人： Neal T. Kurfiss ,  James E. Carey ,  Xia Li

IPC分类号： H01L31/00 ,  H01L47/00 ,  H01L29/06 ,  H01L29/24 ,  H01L29/38 ,  H01L29/30 ,  H01L29/36 ,  H01L29/40 ,  H01L31/111 ,  H01L29/732 ,  H01L27/148 ,  H01L31/062 ,  H01L29/861

CPC分类号： H01L27/14603 ,  H01L27/1464 ,  H01L27/14683 ,  H01L31/101 ,  H01L31/18 ,  Y10S257/91

摘要： The present disclosure provides systems and methods for configuring and constructing a single photo detector or array of photo detectors with all fabrications circuitry on a single side of the device. Both the anode and the cathode contacts of the diode are placed on a single side, while a layer of laser treated semiconductor is placed on the opposite side for enhanced cost-effectiveness, photon detection, and fill factor.

摘要翻译： 本公开提供了用于在设备的单侧上配置和构造单个光电检测器或光电检测器阵列的系统和方法，所述光检测器或阵列具有所有制造电路。 二极管的阳极和阴极触点都放置在一侧，而一层激光处理的半导体放置在相反的一侧，以提高成本效益，光子检测和填充因子。

公开(公告)号：US08093982B2

公开(公告)日：2012-01-10

申请号：US12731393

申请日：2010-03-25

申请人： Jonghae Kim ,  Milind P. Shah ,  Chi Shun Lo ,  Je-Hsiung Lan ,  Xia Li ,  Matthew Michael Nowak

发明人： Jonghae Kim ,  Milind P. Shah ,  Chi Shun Lo ,  Je-Hsiung Lan ,  Xia Li ,  Matthew Michael Nowak

IPC分类号： H01F5/00

CPC分类号： H01L28/10 ,  H01F2017/004 ,  H01L21/84 ,  H01L23/645 ,  H01L27/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： An inductor or transformer for use in integrated circuit devices that includes a high-resistivity substrate. The inductor includes a plurality of conductive traces around the substrate forming a continuous conductive path from a first to a second port. The conductive path can be solenoid-shaped. Some of the conductive traces can be formed during back-end-of-line processing or backside plating of an integrated circuit die. The transformer includes a first inductor with input and output ports, and a first continuous conductive path therebetween; and a second inductor with input and output ports, and a second continuous conductive path therebetween. The second inductor is independent of and electromagnetically coupled to the first inductor. The first and second conductive paths can be solenoid-shaped. The first conductive path can be interleaved with the second conductive path.

摘要翻译： 一种用于集成电路器件的电感器或变压器，其包括高电阻率衬底。 电感器包括围绕衬底的多个导电迹线，形成从第一端口到第二端口的连续导电路径。 导电路径可以是螺线管形的。 一些导电迹线可以在集成电路管芯的后端处理或背面电镀期间形成。 变压器包括具有输入和输出端口的第一电感器和它们之间的第一连续导电路径; 以及具有输入和输出端口的第二电感器以及它们之间的第二连续导电路径。 第二电感器与第一电感器无关并与其电磁耦合。 第一和第二导电路径可以是螺线管形的。 第一导电路径可以与第二导电路径交错。

公开(公告)号：US08077504B2

公开(公告)日：2011-12-13

申请号：US12421011

申请日：2009-04-09

申请人： Xia Li

发明人： Xia Li

IPC分类号： H01L47/00 ,  H01L21/20 ,  H01L21/00

CPC分类号： H01L45/122 ,  G11C13/0004 ,  G11C2013/008 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/126 ,  H01L45/1683

摘要： A method of forming a phase-change random access memory (PRAM) cell and PRAM arrangement, and embodiments of phase-change random access memory (PRAM) cells and PRAM arrangements are disclosed. A phase-change random access memory (PRAM) cell includes a bottom electrode, a heater resistor coupled to the bottom electrode, a phase change material (PCM) coupled to the heater resistor, and a top electrode coupled to the phase change material. An active region between the heater resistor and the phase change material is defined by a thickness of the heater resistor.

摘要翻译： 公开了形成相变随机存取存储器（PRAM）单元和PRAM布置的方法以及相变随机存取存储器（PRAM）单元和PRAM布置的实施例。 相变随机存取存储器（PRAM）单元包括底部电极，耦合到底部电极的加热电阻器，耦合到加热器电阻器的相变材料（PCM）和耦合到相变材料的顶部电极。 加热电阻器和相变材料之间的有源区域由加热电阻器的厚度限定。

公开(公告)号：US20110200013A1

公开(公告)日：2011-08-18

申请号：US13126581

申请日：2009-11-06

申请人： Hong Cheng ,  Tien Ming Benjamin Koh ,  Xia Li ,  Takako Hori

发明人： Hong Cheng ,  Tien Ming Benjamin Koh ,  Xia Li ,  Takako Hori

IPC分类号： H04W36/00

CPC分类号： H04W36/0011 ,  H04W80/10

摘要： The invention discloses a technique to adequately control a handover of a user terminal in a data communication network and to decrease the number of signalings. According to this technique, when address of a user terminal (UE (101)) is not changed after a handover, UE (101) transmits a session update signaling message to carry out update processing of application session to P-CSCF 1 (121) corresponding to a location before the handover via P-CSCF 2 (123) corresponding to a location after the handover. P-CSCF 1 (121) transfers a session update signaling message to S-CSCF/AS (125) by using setup of signaling relating to UE (100) before the handover. At S-CSCF/AS (125), the application session is updated by using registration information of UE (100) before the handover.

摘要翻译： 本发明公开了一种适当控制用户终端在数据通信网络中的切换并减少信令数量的技术。 根据该技术，在切换后用户终端（UE（101））的地址没有变化的情况下，UE（101）发送会话更新信令消息，对P-CSCF 1（121）进行应用会话的更新处理， 对应于与切换之后的位置相对应的经由P-CSCF 2（123）的切换之前的位置。 P-CSCF 1（121）通过在切换之前使用与UE（100）相关的信令的建立来将会话更新信令消息传送到S-CSCF / AS（125）。 在S-CSCF / AS（125）中，通过在切换之前使用UE（100）的注册信息来更新应用会话。

公开(公告)号：US07781231B2

公开(公告)日：2010-08-24

申请号：US12044596

申请日：2008-03-07

申请人： Xia Li

发明人： Xia Li

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/5607 ,  G11C2211/5615 ,  H01F10/3254 ,  H01F41/308 ,  H01L27/222 ,  H01L43/08

摘要： A method of manufacturing a magnetic tunnel junction device is disclosed that includes forming a trench in a substrate, depositing a conductive terminal within the trench, and depositing a magnetic tunnel junction (MTJ) structure within the trench. The MTJ structure includes a fixed magnetic layer having a fixed magnetic orientation, a tunnel junction layer, and a free magnetic layer having a configurable magnetic orientation. The fixed magnetic layer is coupled to the conductive terminal along an interface that extends substantially normal to a surface of the substrate. The free magnetic layer that is adjacent to the conductive terminal carries a magnetic domain adapted to store a digital value.

摘要翻译： 公开了一种制造磁性隧道结装置的方法，其包括在衬底中形成沟槽，在沟槽内沉积导电端子，以及在沟槽内沉积磁性隧道结（MTJ）结构。 MTJ结构包括具有固定磁性取向的固定磁性层，隧道结层和具有可配置磁性取向的自由磁性层。 固定磁性层沿着基本上垂直于衬底的表面延伸的界面耦合到导电端子。 与导电端子相邻的自由磁性层承载适于存储数字值的磁畴。

公开(公告)号：US20090205061A1

公开(公告)日：2009-08-13

申请号：US12406334

申请日：2009-03-18

申请人： Xia Li ,  Weihua Li ,  Danielle R. Reed ,  Alexander A. Bachmanov ,  Joseph G. Brand

发明人： Xia Li ,  Weihua Li ,  Danielle R. Reed ,  Alexander A. Bachmanov ,  Joseph G. Brand

IPC分类号： A01K67/027 ,  C12N15/11 ,  C12N15/00 ,  C12N5/06 ,  C12N5/08 ,  C07K14/00 ,  C12Q1/68 ,  C12P21/02 ,  G01N33/566 ,  C12N1/21 ,  C07K16/18

CPC分类号： C07K14/705

摘要： The present invention relates to the discovery of several genes of the domestic cat (Felis catus) associated with taste perception. The invention provides, inter alia, the nucleotide sequence of the feline Tas1r1, Tas1r2, and Tas1r3 receptor genes, the amino acid sequences of the polypeptides encoded thereby, and antibodies to the polypeptides. The present invention also relates to methods for screening for compounds that modify the genes' function or activity, the compounds identified by such screens, and mimetics of the identified compounds. The invention further provides methods for modifying the taste preferences, ingestive responses, or general behavior of a mammal, such as a cat, by administering compounds that affect the function or activity of the gene or the polypeptide encoded thereby.

摘要翻译： 本发明涉及与味觉相关的家猫（Felis catus）的几种基因的发现。 本发明特别提供了猫科动物Tas1r1，Tas1r2和Tas1r3受体基因的核苷酸序列，由此编码的多肽的氨基酸序列以及针对多肽的抗体。 本发明还涉及用于筛选修饰基因的功能或活性的化合物的方法，由这种筛选鉴定的化合物以及鉴定的化合物的模拟物。 本发明还提供了通过施用影响基因的功能或活性的化合物或由其编码的多肽来修饰哺乳动物（例如猫）的味道偏好，摄入反应或一般行为的方法。

公开(公告)号：US20090193392A1

公开(公告)日：2009-07-30

申请号：US11963189

申请日：2008-01-29

申请人： Michael David Downen ,  Aidan T. Hughes ,  Jonathan W. Keljo ,  Simon J. Hall ,  Xia Li ,  Raja Krishnaswarny ,  Atsushi Kanamori

发明人： Michael David Downen ,  Aidan T. Hughes ,  Jonathan W. Keljo ,  Simon J. Hall ,  Xia Li ,  Raja Krishnaswarny ,  Atsushi Kanamori

IPC分类号： G06F9/44

CPC分类号： G06F9/445

摘要： Embodiments are directed to providing intermediate language (IL) code on a per-method basis for at least one method of a binary. In one embodiment, a computer system selects a method from among various methods included in a binary file, where the methods are configured to perform various intended functions for an application. The computer system appends a descriptive marker to the selected method indicating how to obtain IL code that is to be included in the body of the selected method, receives a command to execute the selected method, and refers to the appended descriptive marker to generate an IL code request based on the indication in the descriptive marker. The computer system submits the generated IL code request to one or more IL code providers to request IL code for the selected method, receives the requested IL code for the selected method and inserts the IL code into the body of the selected method.

摘要翻译： 实施例针对的是针对二进制文件的至少一种方法在每个方法的基础上提供中间语言（IL）代码。 在一个实施例中，计算机系统从包括在二进制文件中的各种方法中选择方法，其中所述方法被配置为对应用执行各种预期功能。 计算机系统向所选择的方法附加描述性标记，指示如何获得要包括在所选方法的主体中的IL代码，接收执行所选择的方法的命令，并且引用附加的描述性标记以产生IL 基于描述性标记中的指示的代码请求。 计算机系统将生成的IL代码请求提交给一个或多个IL代码提供者以请求所选方法的IL代码，接收所选方法的所请求的IL代码，并将IL代码插入所选方法的正文中。

公开(公告)号：US20080132042A1

公开(公告)日：2008-06-05

申请号：US11618696

申请日：2006-12-29

申请人： Xiaobo Li ,  Xia Li ,  Jie Zhao

发明人： Xiaobo Li ,  Xia Li ,  Jie Zhao

IPC分类号： H01L21/205

CPC分类号： C23C16/4404 ,  C23C16/4405

摘要： A process for cleaning a chamber in a Chemical Vapor Deposition apparatus includes removing a polysilicon layer formed on the interior of the chamber after a doped polysilicon layer has been deposited on a wafer through Chemical Vapor Deposition, and depositing a doped polysilicon layer on the interior of the chamber. With such a process, enough doped ions can be absorbed by the interior of the chamber, and ions doped in a process of depositing a doped polysilicon layer on a surface of a wafer can be prevented from being absorbed on the inner walls of the chamber and the other components in the chamber, resulting in stable doped constituents and resistance value of the doped polysilicon layer deposited on the surface of the wafer.

摘要翻译： 用于在化学气相沉积装置中清洁室的方法包括：在通过化学气相沉积在晶片上沉积掺杂多晶硅层之后去除形成在室内部的多晶硅层，并且在掺杂多晶硅层的内部沉积掺杂多晶硅层 房间。 通过这样的处理，可以通过室的内部吸收足够的掺杂离子，并且可以防止在晶片的表面上沉积掺杂多晶硅层的过程中掺杂的离子被吸收在室的内壁上， 在腔室中的其他组分，导致沉积在晶片表面上的掺杂多晶硅层的稳定的掺杂成分和电阻值。