公开(公告)号：US07470595B2

公开(公告)日：2008-12-30

申请号：US11497344

申请日：2006-08-02

申请人： Nobuyuki Nishikawa ,  Hiroshi Minakata ,  Kouji Tsunoda ,  Eiji Yoshida

发明人： Nobuyuki Nishikawa ,  Hiroshi Minakata ,  Kouji Tsunoda ,  Eiji Yoshida

IPC分类号： H01L21/20 ,  H01L21/76

CPC分类号： H01L28/65 ,  H01L27/10814 ,  H01L27/10855 ,  H01L28/91

摘要： A tight contact layer is disposed on a semiconductor substrate, the tight contact layer being made of one material selected from the group consisting of refractory metal, alloy of refractory metal, nitride of refractory metal, and siliconized nitride of refractory metal. An oxide surface layer is disposed on the surface of the tight contact layer, the oxide surface layer being made of oxide of material constituting the tight contact layer. A first conductive layer is disposed on the surface of the oxide surface layer, the first conductive layer being made of a platinum group or alloy which contains a platinum group. When a conductive layer made of metal such as a platinum group is formed on a tight contact layer, coverage and morphology can be prevented from being degraded.

摘要翻译： 紧密接触层设置在半导体衬底上，紧密接触层由选自耐火金属，难熔金属合金，难熔金属氮化物和难熔金属的氮化硅组成的组中的一种材料制成。 氧化物表面层设置在紧密接触层的表面上，氧化物表面层由构成紧密接触层的材料的氧化物制成。 第一导电层设置在氧化物表面层的表面上，第一导电层由含有铂族的铂族或合金制成。 当在紧密接触层上形成由诸如铂族基团的金属制成的导电层时，可以防止覆盖和形态的劣​​化。

公开(公告)号：US20080054356A1

公开(公告)日：2008-03-06

申请号：US11896679

申请日：2007-09-05

申请人： Eiji Yoshida

发明人： Eiji Yoshida

IPC分类号： H01L29/78 ,  H01L21/8236

CPC分类号： H01L21/823418 ,  H01L21/823456 ,  H01L21/823468 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7836

摘要： Under a sidewall formed over a side wall of a gate electrode, a low-concentration LDD region and a high-concentration LDD region which is extremely shallow and apart from a region under the gate electrode are formed. Further, a source/drain region is formed outside these LDD regions. Since the extremely shallow high-concentration LDD region is formed under the sidewall, even if hot carriers are accumulated in the sidewall, depletion due to the hot carriers can be suppressed. Further, since the high-concentration LDD region is formed apart from a region under the gate electrode, a transverse electric field in the channel is sufficiently relaxed, so that characteristic deterioration due to a threshold shift can be suppressed.

摘要翻译： 在栅电极的侧壁形成的侧壁下方，形成了与栅极电极下方非常浅且分离的低浓度LDD区域和高浓度LDD区域。 此外，在这些LDD区域外部形成源极/漏极区域。 由于在侧壁下形成极浅的高浓度LDD区域，所以即使热载流子积聚在侧壁中，也能够抑制热载流子的耗尽。 此外，由于高浓度LDD区域与栅电极下方的区域形成，所以沟道中的横向电场充分松弛，从而可以抑制由阈值偏移引起的特性恶化。

公开(公告)号：US07196418B2

公开(公告)日：2007-03-27

申请号：US11042347

申请日：2005-01-26

申请人： Takao Ohno ,  Eiji Yoshida ,  Hiroshi Misawa

发明人： Takao Ohno ,  Eiji Yoshida ,  Hiroshi Misawa

IPC分类号： H01L23/34

CPC分类号： H01L23/3114 ,  H01L23/3128 ,  H01L24/50 ,  H01L24/75 ,  H01L24/79 ,  H01L24/81 ,  H01L24/86 ,  H01L25/0657 ,  H01L27/14618 ,  H01L31/0203 ,  H01L2224/75 ,  H01L2224/75302 ,  H01L2224/81121 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06572 ,  H01L2225/06579 ,  H01L2225/06586 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor element having a plurality of electrodes provided on one principal surface thereof and a wiring substrate having a conductive layer on an insulating substrate. The wiring substrate is arranged in a substantially U-shape along an outer edge of the semiconductor element. An end of the conductive layer of the wiring substrate is connected to the electrodes of the semiconductor element. The other end of the conductive layer extends in a direction opposite to the semiconductor element on the other principal surface side of the semiconductor element.

摘要翻译： 半导体器件包括具有设置在其一个主表面上的多个电极的半导体元件和在绝缘基板上具有导电层的布线基板。 布线基板沿着半导体元件的外边缘布置成大致U形。 布线基板的导电层的端部与半导体元件的电极连接。 导电层的另一端在与半导体元件的另一主面侧的半导体元件相反的方向上延伸。

公开(公告)号：US20060286744A1

公开(公告)日：2006-12-21

申请号：US11497344

申请日：2006-08-02

申请人： Nobuyuki Nishikawa ,  Hiroshi Minakata ,  Kouji Tsunoda ,  Eiji Yoshida

发明人： Nobuyuki Nishikawa ,  Hiroshi Minakata ,  Kouji Tsunoda ,  Eiji Yoshida

IPC分类号： H01L21/8242

CPC分类号： H01L28/65 ,  H01L27/10814 ,  H01L27/10855 ,  H01L28/91

摘要： A tight contact layer is disposed on a semiconductor substrate, the tight contact layer being made of one material selected from the group consisting of refractory metal, alloy of refractory metal, nitride of refractory metal, and siliconized nitride of refractory metal. An oxide surface layer is disposed on the surface of the tight contact layer, the oxide surface layer being made of oxide of material constituting the tight contact layer. A first conductive layer is disposed on the surface of the oxide surface layer, the first conductive layer being made of a platinum group or alloy which contains a platinum group. When a conductive layer made of metal such as a platinum group is formed on a tight contact layer, coverage and morphology can be prevented from being degraded.

公开(公告)号：US07109561B2

公开(公告)日：2006-09-19

申请号：US11075758

申请日：2005-03-10

申请人： Kazuo Teshirogi ,  Yuzo Shimobeppu ,  Kazuhiro Yoshimoto ,  Mitsuhisa Watanabe ,  Yoshiaki Shinjo ,  Eiji Yoshida ,  Noboru Hayasaka

发明人： Kazuo Teshirogi ,  Yuzo Shimobeppu ,  Kazuhiro Yoshimoto ,  Mitsuhisa Watanabe ,  Yoshiaki Shinjo ,  Eiji Yoshida ,  Noboru Hayasaka

IPC分类号： H01L29/82

CPC分类号： H01L21/67092 ,  B24B37/042 ,  B32B37/003 ,  B32B37/1018 ,  B32B38/0012 ,  B32B2310/0831 ,  B32B2457/14 ,  H01L21/304 ,  H01L21/67132 ,  H01L21/6836 ,  H01L21/6838 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/07802 ,  Y10T29/5313 ,  Y10T29/53191 ,  Y10T428/1452 ,  H01L2924/3512 ,  H01L2924/00

摘要： The present invention relates to a method of manufacturing a semiconductor substrate including the back grind step, the dicing step, the pick up step, and the die bonding step of the wafer; and to a semiconductor substrate jig used in such method. The object of the present invention is to mitigate the effect and to prevent damage caused by the lack of strength in thinned semiconductor substrates. A jig with an outer frame 21, and a rubber film 22 arranged within the outer frame 21 and having increasing and decreasing body size while deforming its shape by supplying air therein are provided. As the volume of the rubber film 22 increases, the wafer-fixing jig 20 deforms the rubber film and allows the tapes 2 and 6 arranged between the wafer 1 and the rubber film 22A to be pushed toward the wafer 1 gradually from the center outward. The attachment step, the back grind step, the tape reapplication step, the pick up step and the die bonding step are conducted using such wafer-fixing jig.

摘要翻译： 本发明涉及一种制造半导体衬底的方法，该半导体衬底包括晶片的后研磨步骤，切割步骤，拾取步骤和芯片键合步骤; 以及用于这种方法的半导体衬底夹具。 本发明的目的是减轻效果并且防止由于在减薄的半导体衬底中的强度不足而引起的损坏。 提供了具有外框架21的夹具和布置在外框架21内的橡胶膜22，并且通过在其中供应空气使其形状变形而具有越来越小的体尺寸。 当橡胶膜22的体积增加时，晶片固定夹具20使橡胶膜变形，并且允许布置在晶片1和橡胶膜22A之间的带2和6从中心向外逐渐推向晶片1 。 使用这种晶片固定夹具进行安装步骤，后研磨步骤，带重新施加步骤，拾取步骤和芯片粘合步骤。

公开(公告)号：US07032364B2

公开(公告)日：2006-04-25

申请号：US10493815

申请日：2003-05-23

申请人： Eiji Yoshida ,  Keiichi Yahagi ,  Hiroyuki Matsunaga ,  Satoshi Otake ,  Hiroki Matsumoto ,  Tatsuro Ishimatsu ,  Yusuke Yoshida ,  Kagenori Nagao ,  Satomi Kudo ,  Eri Kawaguchi ,  Ikuo Andreas Nakayama ,  Yuta Ogino ,  Syotaro Nakajima

发明人： Eiji Yoshida ,  Keiichi Yahagi ,  Hiroyuki Matsunaga ,  Satoshi Otake ,  Hiroki Matsumoto ,  Tatsuro Ishimatsu ,  Yusuke Yoshida ,  Kagenori Nagao ,  Satomi Kudo ,  Eri Kawaguchi ,  Ikuo Andreas Nakayama ,  Yuta Ogino ,  Syotaro Nakajima

IPC分类号： B65B31/02

CPC分类号： B65D39/0052 ,  B67B1/00 ,  B67B1/045 ,  B67B7/04 ,  B67B7/0411 ,  B67B7/0441 ,  B67D2001/0481 ,  B67D2001/0814

摘要： A stopper change device (10) includes an airtight chamber body (21) detachably mountable on a head of a bottle, a gas supply port (19) for supplying N gas to the chamber body, an air vent valve (57) for discharging air from the chamber body, a first supporting structure (28) movable upward and downward for supporting a corkscrew, and a second supporting structure (34) movable upward and downward for containing a substitute stopper. The first and second supporting structures are mutually position changeable, and one of them is selectively placed above an opening of the bottle. When the first supporting structure (28) is placed above the opening, a bottle stopper can be pulled in N gas atmosphere. On the other hand, when the second supporting structure (34) is placed above the opening, the substitute stopper is mountable on the head of the bottle in N gas atmosphere. By changing the bottle stopper with the substitute stopper using this device, entering of air in the bottle as a cause of deterioration in a quality can be prevented.

摘要翻译： 止动器更换装置（10）包括可拆卸地安装在瓶头上的气密室主体（21），用于向室主体供给N气体的气体供给口（19），用于排出空气的排气阀 从所述腔室主体中可以上下移动以支撑开塞钻的第一支撑结构（28）和用于容纳替代塞子的上下移动的第二支撑结构（34）。 第一和第二支撑结构相互位置可变，并且其中一个被选择性地放置在瓶的开口上方。 当第一支撑结构（28）放置在开口上方时，可以在N气体气氛中拉动瓶塞。 另一方面，当第二支撑结构（34）位于开口上方时，替代塞子可在N气体气氛中安装在瓶头上。 通过使用该装置用替代塞子更换瓶塞，可以防止质量下降的原因进入瓶子中的空气。

公开(公告)号：US20050230414A1

公开(公告)日：2005-10-20

申请号：US10514059

申请日：2003-05-23

申请人： Eiji Yoshida ,  Keiichi Yahagi ,  Hiroyuki Matsunaga ,  Satoshi Otake ,  Hiroki Matsumoto ,  Tatsuro Ishimatsu ,  Yusuke Yoshida ,  Kagenori Nagao ,  Satomi Kudo ,  Eri Kawaguchi ,  Ikuo Nakayama ,  Yuta Ogino ,  Syotaro Nakajima

发明人： Eiji Yoshida ,  Keiichi Yahagi ,  Hiroyuki Matsunaga ,  Satoshi Otake ,  Hiroki Matsumoto ,  Tatsuro Ishimatsu ,  Yusuke Yoshida ,  Kagenori Nagao ,  Satomi Kudo ,  Eri Kawaguchi ,  Ikuo Nakayama ,  Yuta Ogino ,  Syotaro Nakajima

IPC分类号： B67D1/14 ,  B67B1/04 ,  B67B7/04 ,  B67B7/06 ,  B67D1/00 ,  B67D1/04 ,  B67D3/00 ,  B67D7/08 ,  B67D7/80 ,  G01F11/02 ,  G01F11/32 ,  G01F15/18 ,  G01F11/00

CPC分类号： B67D3/0003 ,  B67D2001/0481 ,  B67D2001/0814 ,  G01F11/028 ,  G01F11/32 ,  G01F15/18

摘要： A fluid extracting device is structured to be capable of extracting only a predetermined amount of a fluid such as wine or the like while a deterioration preventive gas is being supplied to a bottle B and the fluid extracting device (60), which are coupled to each other in an airtight state. Consequently, the partial extraction in a plurality of operations is made possible without causing quality deterioration of the fluid such as wine or the like even after the bottle is once opened. Further, such a structure is provided that the fluid extracting devices (60) having a large number of bottles of wine or the like attached thereto are mounted on a display table at a wine bar or the like.

摘要翻译： 流体提取装置被构造成能够在将劣化防止气体供给到瓶B和流体提取装置（60）时仅提取预定量的诸如酒等的流体，所述瓶B和流体提取装置 其他在密闭状态。 因此，即使在瓶子一旦打开之后，也可以进行多次操作中的部分提取，而不会引起诸如酒等的流体的质量劣化。 此外，提供了这样一种结构，即，在葡萄酒吧等的显示台上安装有大量附着有酒等的瓶子的流体提取装置（60）。

公开(公告)号：US06951800B2

公开(公告)日：2005-10-04

申请号：US10101174

申请日：2002-03-20

申请人： Yoshiaki Shinjo ,  Yuzo Shimobeppu ,  Kazuo Teshirogi ,  Kazuhiro Yoshimoto ,  Eiji Yoshida ,  Noboru Hayasaka ,  Mitsuhisa Watanabe

发明人： Yoshiaki Shinjo ,  Yuzo Shimobeppu ,  Kazuo Teshirogi ,  Kazuhiro Yoshimoto ,  Eiji Yoshida ,  Noboru Hayasaka ,  Mitsuhisa Watanabe

IPC分类号： B23K26/00 ,  B23K26/06 ,  B23K26/40 ,  B23K101/40 ,  B24B1/00 ,  B24B7/22 ,  H01L21/301 ,  H01L21/304 ,  H01L21/78 ,  H01L21/46

CPC分类号： H01L21/304 ,  B23K26/0624 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B24B1/00 ,  B24B7/228 ,  H01L21/78

摘要： A method of making a semiconductor device includes a back-grinding step of grinding a back surface of a semiconductor substrate, a dicing step of dicing the semiconductor substrate along predetermined dicing lines so as to make pieces of semiconductor devices after the back-grinding step, and a laser exposure step of shining laser light on the back surface of the semiconductor substrate after the back-grinding step so as to remove grinding marks generated by the back-grinding step.

摘要翻译： 制造半导体器件的方法包括：研磨半导体衬底的背面的后研磨步骤;切割步骤，根据预定的切割线切割半导体衬底，以便在后磨削步骤之后制造半导体器件; 以及激光曝光步骤，在后磨削步骤之后，在半导体衬底的背面上照射激光，以消除由后磨削步骤产生的磨痕。

公开(公告)号：US20050204704A1

公开(公告)日：2005-09-22

申请号：US11125519

申请日：2005-05-10

申请人： Eiji Yoshida ,  Keiichi Yahagi ,  Hiroyuki Matsunaga ,  Satoshi Otake ,  Hiroki Matsumoto ,  Tatsuro Ishimatsu ,  Yusuke Yoshida ,  Kagenori Nagao ,  Satomi Kudo ,  Eri Kawaguchi ,  Ikuo Nakayama ,  Yuta Ogino ,  Syotaro Nakajima

发明人： Eiji Yoshida ,  Keiichi Yahagi ,  Hiroyuki Matsunaga ,  Satoshi Otake ,  Hiroki Matsumoto ,  Tatsuro Ishimatsu ,  Yusuke Yoshida ,  Kagenori Nagao ,  Satomi Kudo ,  Eri Kawaguchi ,  Ikuo Nakayama ,  Yuta Ogino ,  Syotaro Nakajima

IPC分类号： B65B31/04 ,  B67B1/00 ,  B67B1/04 ,  B67B7/04 ,  B67D1/00 ,  B67D1/04 ,  F16D11/00 ,  B65B31/02 ,  B65B7/28

CPC分类号： B65D39/0052 ,  B67B1/00 ,  B67B1/045 ,  B67B7/04 ,  B67B7/0411 ,  B67B7/0441 ,  B67D2001/0481 ,  B67D2001/0814

摘要： A stopper change device (10) includes an airtight chamber body (21) detachably mountable on a head of a bottle, a gas supply port (19) for supplying N gas to the chamber body, an air vent valve (57) for discharging air from the chamber body, a first supporting structure (28) movable upward and downward for supporting a corkscrew, and a second supporting structure (34) movable upward and downward for containing a substitute stopper. The first and second supporting structures are mutually position changeable, and one of them is selectively placed above an opening of the bottle. When the first supporting structure (28) is placed above the opening, a bottle stopper can be pulled in N gas atmosphere. On the other hand, when the second supporting structure (34) is placed above the opening, the substitute stopper is mountable on the head of the bottle in N gas atmosphere. By changing the bottle stopper with the substitute stopper using this device, entering of air in the bottle as a cause of deterioration in a quality can be prevented.

摘要翻译： 止动器更换装置（10）包括可拆卸地安装在瓶头上的气密室体（21），用于向室主体供给N气体的气体供给口（19），用于排出空气的排气阀 从所述腔室主体中可以上下移动以支撑开塞钻的第一支撑结构（28）和用于容纳替代塞子的上下移动的第二支撑结构（34）。 第一和第二支撑结构相互位置可变，并且其中一个被选择性地放置在瓶的开口上方。 当第一支撑结构（28）放置在开口上方时，可以在N气体气氛中拉动瓶塞。 另一方面，当第二支撑结构（34）位于开口上方时，替代塞子可在N气体气氛中安装在瓶头上。 通过使用该装置用替代塞子更换瓶塞，可以防止质量下降的原因进入瓶子中的空气。

公开(公告)号：US06924523B2

公开(公告)日：2005-08-02

申请号：US10391889

申请日：2003-03-19

申请人： Hideaki Aochi ,  Mitsuru Sato ,  Eiji Yoshida

发明人： Hideaki Aochi ,  Mitsuru Sato ,  Eiji Yoshida

IPC分类号： H01L21/8242 ,  H01L21/02 ,  H01L27/108

CPC分类号： H01L28/84 ,  H01L27/10814 ,  H01L28/91

摘要： A semiconductor memory device includes a semiconductor substrate and a support layer provided above the semiconductor substrate. Particles are formed on the support layer. A first electrode is provided on the support layer such that it covers the particles. The first electrode has a first interface located opposite to the particles and being wavy in accordance with the pattern of the particles. A capacitor insulation film is provided on the first interface. The capacitor insulation film has a second interface located opposite to the first interface and being wavy in accordance with the shape of the first interface. A second electrode is provided on the capacitor insulation film.

摘要翻译： 半导体存储器件包括半导体衬底和设置在半导体衬底之上的支撑层。 颗粒形成在支撑层上。 第一电极设置在支撑层上，使得其覆盖颗粒。 第一电极具有与颗粒相对的第一界面，并且根据颗粒的图案是波浪形的。 在第一接口上设置电容绝缘膜。 电容绝缘膜具有与第一界面相对的第二界面，并且根据第一界面的形状为波状。 在电容绝缘膜上设置第二电极。