MEMORY CELL WITH UNIPOLAR SELECTORS
    101.
    发明申请

    公开(公告)号:US20210043683A1

    公开(公告)日:2021-02-11

    申请号:US16531482

    申请日:2019-08-05

    Abstract: In some embodiments, the present disclosure relates to an integrated circuit. The integrated circuit has a magnetic tunnel junction (MTJ) device disposed within a dielectric structure over a substrate. The MTJ device has a MTJ disposed between a first electrode and a second electrode. A first unipolar selector is disposed within the dielectric structure and is coupled to the first electrode. The first unipolar selector is configured to allow current to flow through the MTJ device along a first direction. A second unipolar selector is disposed within the dielectric structure and is coupled to the first electrode. The second unipolar selector is configured to allow current to flow through the MTJ device along a second direction opposite the first direction.

    THREE-DIMENSIONAL MEMORY DEVICE AND METHOD
    109.
    发明公开

    公开(公告)号:US20240312830A1

    公开(公告)日:2024-09-19

    申请号:US18673571

    申请日:2024-05-24

    CPC classification number: H01L21/76237 G11C7/18 H10B51/20 H10B99/00

    Abstract: A method of forming a three-dimensional (3D) memory device includes: forming a layer stack over a substrate, the layer stack including alternating layers of a first dielectric material and a second dielectric material; forming trenches extending through the layer stack; replacing the second dielectric material with an electrically conductive material to form word lines (WLs); lining sidewalls and bottoms of the trenches with a ferroelectric material; filling the trenches with a third dielectric material; forming bit lines (BLs) and source lines (SLs) extending vertically through the third dielectric material; removing portions of the third dielectric material to form openings in the third dielectric material between the BLs and the SLs; forming a channel material along sidewalls of the openings; and filling the openings with a fourth dielectric.

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