公开(公告)号：US20080084650A1

公开(公告)日：2008-04-10

申请号：US11866646

申请日：2007-10-03

Applicant: Ganesh Balasubramanian ,  Amit Bansal ,  Eller Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Kim ,  Amir Al-Bayati ,  Derek Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

Inventor： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Kim ,  Amir Al-Bayati ,  Derek Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

IPC: H01L21/683

CPC classification number: H01L21/6831 ,  C23C16/52 ,  H01J37/32431 ,  H01L21/67069 ,  H01L21/67253

Abstract: The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

Abstract translation: 本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。 本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到 静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的假想阻抗。

公开(公告)号：US20080044594A1

公开(公告)日：2008-02-21

申请号：US11877560

申请日：2007-10-23

Applicant: Francimar Schmitt ,  Hichem M'saad

Inventor： Francimar Schmitt ,  Hichem M'saad

IPC: H05H1/24

CPC classification number: H01L21/31633 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274

Abstract: A method for depositing a low dielectric constant film having a dielectric constant of about 3.2 or less, preferably about 3.0 or less, includes providing a cyclic organosiloxane and a linear hydrocarbon compound having at least one unsaturated carbon-carbon bond to a substrate surface. In one aspect, the cyclic organosiloxane and the linear hydrocarbon compound are reacted at conditions sufficient to deposit a low dielectric constant film on the semiconductor substrate. Preferably, the low dielectric constant film has compressive stress.

Abstract translation: 介电常数约为3.2以下，优选为3.0以下的低介电常数膜的制造方法包括向基板表面提供具有至少一个不饱和碳 - 碳键的环状有机硅氧烷和线性烃化合物。 一方面，环状有机硅氧烷和直链烃化合物在足以在半导体衬底上沉积低介电常数膜的条件下进行反应。 优选地，低介电常数膜具有压应力。

公开(公告)号：US20080041415A1

公开(公告)日：2008-02-21

申请号：US11925611

申请日：2007-10-26

Applicant: Alexandros Demos ,  Khaled Elsherf ,  Josphine Chang ,  Hichem M'saad

Inventor： Alexandros Demos ,  Khaled Elsherf ,  Josphine Chang ,  Hichem M'saad

IPC: B08B6/00

CPC classification number: B08B7/0035 ,  B82Y10/00 ,  B82Y40/00 ,  C23C16/4405 ,  C23C16/56 ,  H01J37/3174 ,  Y10S438/905

Abstract: One embodiment of the present invention is a method for cleaning an electron beam treatment apparatus that includes: (a) generating an electron beam that energizes a cleaning gas in a chamber of the electron beam treatment apparatus; (b) monitoring an electron beam current; (c) adjusting a pressure of the cleaning gas to maintain the electron beam current at a substantially constant value; and (d) stopping when a predetermined condition has been reached.

Abstract translation: 本发明的一个实施例是一种清洗电子束处理装置的方法，其包括：（a）产生电子束，该电子束激励电子束处理装置的腔室中的清洁气体; （b）监测电子束电流; （c）调节清洁气体的压力以将电子束电流保持在基本恒定的值; 和（d）当达到预定条件时停止。

公开(公告)号：US07325419B2

公开(公告)日：2008-02-05

申请号：US11422299

申请日：2006-06-05

Applicant: Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

Inventor： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

IPC: C03B37/022 ,  G02B6/10

CPC classification number: G02B6/132 ,  C23C16/401 ,  C23C16/505 ,  G02B2006/12169 ,  G02B2006/12176

Abstract: Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

公开(公告)号：US20070134435A1

公开(公告)日：2007-06-14

申请号：US11304847

申请日：2005-12-13

Applicant: Sang Ahn ,  Alexandros Demos ,  Hichem M'Saad

Inventor： Sang Ahn ,  Alexandros Demos ,  Hichem M'Saad

IPC: C23C16/00 ,  C08J7/04

CPC classification number: C23C16/401 ,  C08J7/065 ,  C08J7/08 ,  C08J7/12 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31633

Abstract: A method for depositing a low dielectric constant film on a substrate in a chamber from a mixture including two organosilicon compounds is provided. The mixture may further include a hydrocarbon compound and an oxidizing gas. The first organosilicon compound has an average of one or more Si—C bonds per Si atom. The second organosilicon compound has an average number of Si—C bonds per Si atom that is greater than the average number of Si—C bonds per Si atom in the first organosilicon compound. The low dielectric constant film has good plasma/wet etch damage resistance, good mechanical properties, and a desirable dielectric constant.

Abstract translation: 提供了一种从包含两种有机硅化合物的混合物在室中的衬底上沉积低介电常数膜的方法。 该混合物还可包括烃化合物和氧化气体。 第一有机硅化合物每Si原子平均具有一个或多个Si-C键。 第二有机硅化合物具有比Si原子中Si-C键的平均数大于第一有机硅化合物中每Si原子的Si-C键的平均数。 低介电常数膜具有良好的等离子/湿蚀刻损伤电阻，良好的机械性能和期望的介电常数。

公开(公告)号：US20060266081A1

公开(公告)日：2006-11-30

申请号：US11422299

申请日：2006-06-05

Applicant: Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

Inventor： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

IPC: C03B37/022 ,  C03B37/018 ,  C03C25/00

CPC classification number: G02B6/132 ,  C23C16/401 ,  C23C16/505 ,  G02B2006/12169 ,  G02B2006/12176

Abstract: Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

Abstract translation: 本发明的实施例提供了用于在衬底上制造低传播损耗光波导的高度均匀的低成本生产有价值的解决方案。 在一个实施例中，本发明提供了一种在衬底的下包层上形成PSG光波导的方法，该方法包括使用包括硅源气体的等离子体增强化学气相沉积工艺在所述下封层上形成至少一个硅酸盐玻璃光学芯 氧源气体和磷源气体，其中氧源气体和硅源气体的氧原子与硅原子的比例大于20:1。

公开(公告)号：US20060219175A1

公开(公告)日：2006-10-05

申请号：US11424723

申请日：2006-06-16

Applicant: Sohyun Park ,  Wen Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

Inventor： Sohyun Park ,  Wen Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

IPC: C23C16/00

CPC classification number: H01L21/02126 ,  C23C16/4404 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/76829 ,  Y10S438/913

Abstract: A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

Abstract translation: 提供了调节室的方法和在室中的基板上沉积低介电常数层。 在一个方面，所述方法包括用包含一种或多种有机硅化合物和一种或多种氧化性气体的第一混合物来调节室，并且从室内的衬底上沉积低介电常数层，所述第二混合物包含一种或多种有机硅化合物和 一种或多种氧化性气体，其中有机硅化合物的总流量与第一混合物中的氧化气体的总流量的比率低于有机硅化合物的总流量与氧化物的总流量的比率 第二混合物中的气体。

公开(公告)号：US07112541B2

公开(公告)日：2006-09-26

申请号：US10840754

申请日：2004-05-06

Applicant: Li-Qun Xia ,  Huiwen Xu ,  Derek R. Witty ,  Hichem M'Saad

Inventor： Li-Qun Xia ,  Huiwen Xu ,  Derek R. Witty ,  Hichem M'Saad

IPC: H01L21/469

CPC classification number: H01L21/76826 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76829

Abstract: A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited from a gas mixture comprising an organosilicon compound and an oxidizing gas in the presence of RF power in a chamber. The RF power and a flow of the organosilicon compound and the oxidizing gas are continued in the chamber after the deposition of the low dielectric constant film at flow rates sufficient to deposit an oxide rich cap on the low dielectric constant film.

Abstract translation: 提供一种处理衬底的方法，包括在衬底上沉积包含硅，碳和氧的低介电常数膜并在低介电常数膜上沉积氧化物富盖。 在室内存在RF功率的情况下，从包含有机硅化合物和氧化气体的气体混合物中沉积低介电常数膜。 在低介电常数薄膜以低于在低介电常数膜上沉积富含氧化物的盖子的流速下沉积后，室内继续进行RF功率和有机硅化合物和氧化气体的流动。

公开(公告)号：US07105460B2

公开(公告)日：2006-09-12

申请号：US10193489

申请日：2002-07-11

Applicant: Bok Hoen Kim ,  Sudha Rathi ,  Sang H. Ahn ,  Christopher D. Bencher ,  Yuxiang May Wang ,  Hichem M'Saad ,  Mario D. Silvetti

Inventor： Bok Hoen Kim ,  Sudha Rathi ,  Sang H. Ahn ,  Christopher D. Bencher ,  Yuxiang May Wang ,  Hichem M'Saad ,  Mario D. Silvetti

IPC: H01L21/31

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/31633 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilicon compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen.

Abstract translation: 提供了沉积电介质材料的方法。 电介质材料可用于抗反射涂层或硬掩模。 一方面，提供了一种处理基板的方法，包括将包含硅烷类化合物和有机硅化合物的处理气体引入处理室，并使处理气体在基板上沉积无氮介电材料。 介电材料包括硅和氧。

公开(公告)号：US20060105106A1

公开(公告)日：2006-05-18

申请号：US11055936

申请日：2005-02-11

Applicant: Mihaela Balseanu ,  Kee Jung ,  Lihua Huang ,  Li-Qun Xia ,  Rongping Wang ,  Derek Witty ,  Lewis Stern ,  Martin Seamons ,  Hichem M'Saad ,  Michael Kwan

Inventor： Mihaela Balseanu ,  Kee Jung ,  Lihua Huang ,  Li-Qun Xia ,  Rongping Wang ,  Derek Witty ,  Lewis Stern ,  Martin Seamons ,  Hichem M'Saad ,  Michael Kwan

IPC: C23C16/00 ,  B05D3/00 ,  H05H1/24

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32082 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/3185 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A stressed film is formed on a substrate. The substrate is placed in a process zone and a plasma is formed of a process gas provided in the process zone, the process gas having silicon-containing gas and nitrogen-containing gas. A diluent gas such as nitrogen can also be added. The as-deposited stressed material can be exposed to ultraviolet radiation or electron beams to increase the stress value of the deposited material. In addition or in the alternative, a nitrogen plasma treatment can be used to increase the stress value of the material during deposition. Pulsed plasma methods to deposit stressed materials are also described.

Abstract translation: 在基板上形成应力膜。 将基板放置在处理区中，并且等离子体由设置在处理区中的工艺气体形成，工艺气体具有含硅气体和含氮气体。 还可以加入稀释气体如氮气。 沉积的应力材料可以暴露于紫外线辐射或电子束以增加沉积材料的应力值。 另外或替代地，可以使用氮等离子体处理来增加沉积期间材料的应力值。 还描述了用于沉积应力材料的脉冲等离子体方法。